PSRAM and CellularRAM Part Numbering System Micron's part numbering system is available at www.micron.com/numbering PSRAM and CellularRAM MT 45 W 1M W 16 P A FA - 70 1 Micron Technology WT ES Production Status Blank = Production ES = Engineering sample MS = Mechanical sample Product Family Operating Temperature Range WT = –30°C to +85°C IT = –40°C to +85°C AT = –40°C to +105ºC Operating Core Voltage W = 1.70–1.95V V= 2.7–3.6V Address Locations M = Megabits K = Kilobits Options Blank = Standard L = Low Power I/O Voltage W = 1.75–3.6V V= 2.7–3.6V Frequency Blank = No burst mode 8 = 80 MHz 1 = 104 MHz 13 = 133 MHz Bus Configuration 16 = x16 Read/Write Mode Operation P = Asynchronous/Page B = Asynchronous/Page/Burst DB = AAD Mux MB = MUX Burst MP = Asynchronous Mux Access/Cycle Time -55 = 55ns -70 = 70ns -85 = 85ns Package Codes Die Rev Code Blank = P25A, P26Z and P24Z Design A = P24A Design C = P25Z Design D = P23Z Design E = P22Z Design Mark FA FB BA BB GX GA GB Package Description 48-ball VFBGA (6 x 8 grid, 0.75mm pitch, 6.0 x 8.0 x 1.0mm) 54-ball VFBGA (6 x 9 grid, 0.75mm pitch, 6.0 x 8.0 x 1.0mm) 48-ball Lead-free1 VFBGA (6 x 8 grid, 0.75mm pitch, 6.0 x 8.0 x 1.0mm) 54-ball Lead-free VFBGA (6 x 9 grid, 0.75mm pitch, 6.0 x 8.0 x 1.0mm) 54-ball Green VFBGA (6 x 9 grid, 0.75mm pitch, 8.0 x 10.0 x 1.0mm) 48-ball Green VFBGA (6 x 8 grid, 0.75mm pitch, 6.0 x 8.0 x 1.0mm) 54-ball Green VFBGA (6 x 9 grid, 0.75mm pitch, 6.0 x 8.0 x 1.0mm) Note: 1Lead is not intentionally added by Micron during the manufacturing process, but it can be present in trace amounts in the raw materials used to manufacture the finished products. Rev. 12/3/2008 ©2008 Micron Technology, Inc. Micron and the Micron logo are trademarks of Micron Technology, Inc. CellularRAM is a trademark of Micron Technology, Inc., in the U.S. and a trademark of Qimonda AG outside the U.S. Products and specifications are subject to change without notice.