TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS Overview Technical Note Power Solutions for DDR2 Notebook PCs In cooperation with Overview This technical note provides general guidelines for designing power circuitry for DDR2 memory. It includes the DDR2 voltage requirements and encompasses a sample reference design focused on the Texas Instruments Incorporated (TI) TPS51116, a complete DDR2 memory power solution that includes a synchronous buck controller, 3A linear dropout regulator (LDO), and buffered references. DDR2 Advantages for Notebooks DDR2 memory is an excellent solution for notebook computers. Aside from faster speeds, its greatest advantage over older memory technologies is its reduced power consumption, which results in cooler operating temperatures and extended battery life (see Figure 1 on page 2). The reduced power consumption is realized through a number of design features, including lower operating voltages, reduced page sizes, and 4n-prefetch support. DDR2 memory uses a low operating voltage of only VDD = VDDQ = 1.8V and supports an SSTL_18 I/O interface. The reduced page sizes minimize the activation current, and the 4n-prefetch architecture allows the device core to run at a slower frequency while driving an ultra-fast data rate (currently up to 1066 MT/s/b). Another advantage of DDR2 memory in notebooks is higher density in the same space; aside from the voltage-key placement and pinout change, the DDR2 SODIMM uses the same 200-pin socket as DDR. At the device level, DDR2 components are manufactured at individual memory densities up to 2Gb (at the component level, this reflects a 128Mb x 16 or 256Mb x 8 device), which means DDR2 supports a 4GB channel with just 2 slots. Also new with DDR2 memory is on-die termination (ODT), which has a significant impact on signal quality and power dissipation. ODT gives the controller more effective management of termination to the high-speed signals where and when it is needed. PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications. All information discussed herein is provided on an “as is” basis, without warranties of any kind. Products and specifications discussed herein are subject to change by Micron without notice. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS DDR2 Advantages for Notebooks Figure 1: Power Performance Curves on SDR, DDR, and DDR2 3.5 3.0 2.5 Watts* 2.0 1.5 SDR (PC133) DDR (DDR333) 1.0 DDR2 (DDR2-533) 0.5 0.0 *Includes DRAM core power only Dual-rank, 256Mb (16 Meg x 16)-based SODIMMs, utilizing CKE on unused rank with 50% page hits 20% 30% 40% 50% 60% 70% 80% Bandwidth DDR2 Notebook Assumptions JEDEC has defined 4 standardized small outline, dual in-line memory modules (SODIMMs) that include single- and dual-rank DIMMs utilizing either x16 or x8 devices. All 4 configurations are 64-bit-wide unbuffered SODIMMs with predefined electrical and mechanical specifications. This technical note assumes that the notebook system designer will utilize a dual memory channel with 2 slots, 1 per channel (see Figure 2 on page 3). For a dual-channel, 2-slot system, both the address and command lines terminate at VTT through a resistor. All the high-speed data strobes and data signals utilize localized ODT. On the module, the differential clock pairs (CK/CK#) are differentially terminated. This combination makes for a low-cost, low-power application that maximizes battery life while maintaining a small size and high performance. PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS DDR2 Voltage Requirements DDR2 Voltage Requirements One challenge in designing a DDR2 system is meeting the strict power requirements and predefined power-up and initialization sequences as defined by JEDEC (JESD79-2 DDR2 SDRAM Specification). Therefore, it is critical that the initial power ramps be controlled to meet specifications. In addition, both the termination voltage (VTT ) and reference voltage (VREF) must maintain their respected relationships to VDD at all times. The following sections provide detailed voltage requirements for DDR2 notebook systems. Figure 2: Functional Block Diagram of a Dual-Channel, 2-Slot DDR2 Notebook Power Good Main Controller (CPU) S3 S5 SODIMM 1 SODIMM 2 ODT Circuit ODT Circuit VDDQ VDDQ sw1 sw1 Data/Strobes Data/Strobes DDR2 Memory Controller R2 VSSQ 2 Clock Pairs R2 VSSQ (SSTL_18 I/O) Address/Command and Control Lines 2 Clock Pairs Address/Command and Control Lines VREF VDDSPD Rt VTT R1 Battery (Adaptor) R1 Rt VTT VDD (VDD, VDDQ, VDDL) TI Voltage Controller (TPS51116) 4.5V–28V(DC) VSS (VSS, VSSQ, VSSL, VSSSPD) PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS DDR2 Voltage Requirements Supply VDD (VDD, VDDL, VDDQ) The DDR2 device requires a single power source for primary supply voltages in order to ensure that all voltage levels track each other, especially during the power ramp. At the module level, VDD (device core), VDDL (device DLL), and VDDQ (device I/O) share a single power plane with the interconnecting pins labeled as VDD. Likewise, VSS, VSSL, and VSSQ share a common ground plane labeled as VSS. The memory supply voltage is specified as VDD = VDDQ = 1.8V with a DC tolerance of ±100mV. DC is defined as any signal ≤20 MHz. At the initial power-up, all supply power should be stable and meet specification within ≤10ms. The amount of current each module consumes depends on the density and speed of the module, number of ranks, and, most importantly, the usage conditions. For example, to build a high-density, dual-rank module using (x8) DRAMs, 16 individual devices are required. A system utilizing 2 of these modules and running a heavy-use condition may consume up to 7W–8W. However, the same system, using 1 lower-density, dual-rank module using (x16) DRAMs, will have only 8 discrete components each, and, under moderate use conditions, might consume a total of only 1.5W–2W. Micron’s Web site has a dedicated technical note, “TN-47-04: Calculating Memory System Power for DDR2,” and a custom DDR2 power calculator that provide additional information about how to estimate actual module power usage at www.micron.com/systemcalc. VREF Another key supply voltage is the input reference voltage (VREF). All DDR2 input receivers are calibrated to operate within the specified VREF input levels. For proper device operation, it is critical that the VREF input is free from excess noise or voltage variations. Any degrading of the VREF input voltage directly affects the setup and hold times of the DDR2 device. VREF is expected to equal VDDQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise (non-common mode) on VREF may not exceed ±1% of the DC value. Peak-to-peak AC noise on VREF must not exceed ±2% of VREF(DC). AC noise is defined as any noise over 20 MHz in frequency. There is virtually no current draw on the DDR2 VREF pin; only leakage current is present (less than 5µA per DRAM component). Figure 3 on page 5 shows the industry-standard voltage specifications and tracking requirements for VREF. PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS DDR2 Voltage Requirements Figure 3: Required VREF Voltage Relationships 1.00 0.98 0.96 0.94 V REF (V) 0.92 0.9 0.88 VREF(AC)max = VDDQ x 0.52 VREF(DC)max = VDDQ x 0.51 0.86 VREF,nom* = VDDQ/2 VREF(DC)min = VDDQ x 0.49 0.84 VREF(AC)min = VDDQ x 0.48 0.82 *VREF should track variations in VDDQ and VREF(AC) and must always be within 1% of VREF(DC) 0.80 1.7V 1.8V 1.9V VDDQ (V) VTT DDR2 memory is optimized for stub-series terminated logic at 1.8V (SSTL_18) operation. The address, command, and control lines require system-level termination to a midpoint voltage. This midpoint voltage is called VTT (or the I/O termination voltage). Having the termination sit at midpoint ensures symmetry for switching times. It is important that VTT tracks any variation in the DC levels of VREF. By specification, at all times VTT must equal VREF ±40mV. The termination voltage (VTT ) is supplied directly to the motherboard but not to the module. See Figure 4 on page 6 for logic levels of a properly terminated SSTL_18 signal. ODT (On-Die Termination) As previously mentioned, DDR2’s high-speed, bidirectional signals (data and strobes) are uniquely terminated with on-die termination (ODT). This new feature allows for optimal signal quality (see Figure 5 on page 6) by dynamically controlling the exact termination value where and when it is needed. For example, the ideal placement for termination is at the end of the active signal trace. So, when WRITING to SODIMM1, the memory controller dynamically disables the ODT function on SODIMM2 and the memory controller (both buses) and activates the ODT circuitry on SODIMM1 (at the end of the active transmission line). Likewise, during a READ from either SODIMM, the PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN 5 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS DDR2 Voltage Requirements memory controller dynamically disables the ODT circuitry at both SODIMM locations and enables ODT circuitry on the active bus at the memory controller. ODT facilitates a much-simpler board design that uses fewer components and thereby costs less. ODT also allows better thermal and power-management control. For example, during DRAM inactive times, most memory controllers completely disable the termination in order to conserve power. ODT can accomplish this dynamically. Figure 4: SSTL_18 Single-Ended Input-Logic Levels 1150mV VIH(AC) 1025mV VIH(DC) 936mV 918mV 900mV 882mV 864mV VREF - DC Error VREF - AC Noise 775mV VIL(DC) 650mV VIL(AC) VREF + AC Noise VREF + DC Error Note: Numbers in diagram reflect nominal values (VDD = VDDQ = 1.8V) Figure 5: Functional Block Diagram of ODT Output Driver DQ Pins VDDQ 2 RTT RC VR 2 RTT VSSQ ODT Pin PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN C ontrol 6 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS Power Management for Notebooks with Micron DDR2 and TI VDDSPD Although not utilized for the DRAM, there is one additional power requirement for the SODIMM—the power for the serial present detect (SPD) EEPROM, which holds the module operating parameters. This voltage (VDDSPD) has a wide range tolerance, from +1.7V to +3.6V. In its worst case, the current draw of this pin should be no more than 3mA–4mA. Power Management for Notebooks with Micron DDR2 and TI TPS51116 Designers who use Micron's DDR2 memory modules can now incorporate TI’s TPS51116, an integrated power-management solution that combines a DC/DC currentmode switching controller with a 3A sink/source linear dropout regulator (LDO). This highly integrated device significantly reduces the number of external components typically required to support all the power management for DDR2 memory systems, making the TPS51116 easy to use while offering a smaller total-solution size and lower totalsolution cost, without sacrificing performance. TPS51116: A Solution for Complete DDR2 Power Management Figure 6 on page 8 shows a typical application schematic for the TPS51116 and how it integrates into the complete DDR2 power-management solution with: • Synchronous current mode DC/DC controller to power VDD • Buffered reference to provide VREF (VREF tracks one-half VDD) • 3A sink/source LDO to power VTT (VTT tracks VREF) • S3/S5 sleep-state controls This high-level integration simplifies the design of the power-management segment of DDR2 memory. This places the burden on the TPS51116 to meet the industry-standard specifications and the proper management of S3 and S5 states. The synchronous current mode DC/DC controller is used to power VDD/VDDQ. Implementing the power supply requires 2 external NFETs, in addition to an inductor and input/output capacitors. This output is used to power DDR2 memory’s VDD/VDDQ and is able to achieve high efficiency during wide load variation—expected to range from 10mA to 10A. The output of TPS51116’s switcher is internally divided down by one half and is used to generate VREF. The VREF output tracks changes in VDD/VDDQ with a high level of accuracy, achieved by the precisely matched internal-resistor divider. VREF is buffered, helping increase its immunity to noise and changes in load. This is critical in maintaining the stringent VREF to VDDQ tracking requirements of the DDR2 device. The final-output-voltage rails required for DDR2 is for VTT. The power for this rail comes from the LDO segment of the TPS51116. The LDO supports 3A peak current and has 1.5A continuous current capabilities. This LDO can sink/source current and meet the industry-standard specifications with only 2x10uF ceramic output capacitors. DDR2 allows the use of an LDO to power termination (VTT ) because of the reduction in required current, resulting from the implementation of ODT. PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN 7 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS Line Regulation, Load Regulation, and Transient Response Figure 6: Typical Application Circuit for TPS51116 VIN C5 ceramic 2x10uF TPS51116 VTT GND VREF C3 ceramic 2x10uF C4 ceramic 0.033uF 1 2 3 4 5 6 7 8 9 10 VBST 20 VLDOIN DRVH 19 VTT LL 18 VTT GND DRVL 17 VTT SNS PGND 16 GND CS 15 MODE V5IN 14 VTTREF PGOOD 13 COMP S5 12 VDDQ SNS S3 11 VDDQ SET M1 C1 ceramic 0.1uF L1 1.1uF M2 VDD C8 SP-CAP 2x150uF R1 GND R2 C2 ceramic 4.7uF 5V_IN GND GND R1 = 5.11K W R2 = 100K W M1 = IRF7821 M2 = IRF7832 S3 S5 PGOOD Line Regulation, Load Regulation, and Transient Response DDR2 memory requires industry-standard power specifications. The voltage tolerances that need to be supported throughout the changes in input voltage (line regulation), output current (load regulation), and transient response are defined as: • VDDQ = 1.8V ±100mV • VREF = 0.49 VDDQ/0.51 VDDQ • VTT = VREF ±40mV Line regulation ensures that the tolerances are maintained when the input voltage changes. Figure 7 on page 9 shows as the input voltage changes from 4V to 28V, VDDQ changes by only a few millivolts (spec is ±100mV). VREF tracks VDDQ/2, and there is a difference of only about 10mV between VTT and VREF (spec is ±40mV). Load regulation and transient response ensures the tolerances are maintained when the output current changes. Load regulation is a static test condition, while transient response is a dynamic test condition. Figure 8 on page 9 shows VDDQ with a static load change from 0A to 10A on VDDQ, with its output voltage <35mV from 1.8V (specification is ±100mV). In Figure 9 on page 10, the load changes from -1.5A to 1.5A on VTT, and VDDQ is about 25mV from 1.8V (specification is ±100mV), with VTT–VREF near ±20mV (specification is VREF ±40mV). PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS Line Regulation, Load Regulation, and Transient Response Figure 7: Line Regulation for All 3 Outputs VDDQ/2 VREF VTT 0.915 VOUT (V)* 0.910 0.905 0.900 0.895 0.890 0 4 8 12 16 20 24 28 32 VIN (V) * Test was performed with a 7A load on VDDQ/2 and a 0.3A load VTT Load Regulation VDDQ Only (VIN = 12V) Volts Figure 8: 1.850 1.845 1.840 1.835 1.830 1.825 1.820 1.815 1.810 VDDQ 0 2 4 6 8 10 Output Current (A) PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS Line Regulation, Load Regulation, and Transient Response Figure 9: Transient Response (VIN = 12V) Tek Stop: 2.50MS/s 1 VDDQ (25mV) 32 VREF VTT 4 VTT load (-1.5A to 1.5A) Ch1 Ch3 50.0mV Ch2 20.0m V Ch4 20.0mV M 1.00 V 20.0uS Ch4 1.54V Note: VTT–VREF (+/-20mV) PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS TPS51116 Manages the Critical Relationship Between VTT/VREF TPS51116 Manages the Critical Relationship Between VTT/VREF and VDDQ TI’s TPS51116 has a very important role in managing notebook sleep-state functions. For DDR2 memory, it is critical during both start-up and shutdown that VDDQ is always higher than VTT/VREF. If VTT/VREF is greater than VDDQ + 0.3V, the DDR2 memory could latch up. TPS51116’s integrated sleep-state functions help prevent this condition—the S3 and S5 pins on the TPS51116 are connected to the S3 and S4/S5 control signals in the notebook computer (Figure 2 on page 3), enabling the S3 and S5 pins to be used to manage all sleep-state functions: • S0 = Full On • S3 = Suspend-to-RAM (STR) • S4/S5 = Suspend-to-Disk (STD)/Soft Off Table 1 summarizes how the TPS51116 handles the sleep-state modes. When transitioning from an S4/S5 state (STD) to S0 (Full On), S5 will go HIGH first, and then S3 will go HIGH. Figure 10 on page 12 shows that when S5 goes HIGH, VDDQ turns on, and when S3 goes HIGH, VTT will turn on. During start-up, VTT cannot turn on until a VDDQ voltage exists; as soon as VDDQ voltage turns on, the VTT voltage will track VDDQ. Therefore, during start-up, VDDQ will always be greater than VTT. Table 1: S3 and S5 TPS51116 Input and Output Parameters Inputs State Status S0 S3 S4/S5 Full On Suspend-to-RAM (STR) Suspend-to-Disk (STD)/Soft Off PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN Outputs S3 S5 HIGH LOW LOW HIGH HIGH LOW 11 VDDQ VREF VTT On On On On On Off (High-Z) Off (Discharge) Off (Discharge) Off (Discharge) Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS TPS51116 Manages the Critical Relationship Between VTT/VREF Figure 10: Full-On Power Ramp Tek Stop: 10.kS/s VDDQ VTT 21 S5 3 S3 4 Ch1 Ch3 1.00 V Ch2 5.00 V Ch4 500mV 5.00V M 5.00ms Ch2 680mV During an S3 state, the S3 control signal goes LOW, and the system enters a Suspend-toRAM state (STR). STR can occur only after the DRAM has been properly placed into self refresh mode. This requires a predefined series of command sequences (turn off ODT, precharge all banks, and then synchronously take CKE LOW with the AUTO REFRESH command). (See any Micron DDR2 data sheet for details on the required command sequence.) The STR or self refresh mode is the lowest DRAM power state. If the proper command sequences are followed, and all supply voltages are kept within their specified limits, the DDR2 DRAM will preserve the data contents indefinitely. During this state, VDD/VDDQ and VREF remain on, and VTT enters a high-impedance state (High-Z). The VTT output no longer sinks or sources current and is floating, as shown in Figure 11 on page 13. PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN 12 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS TPS51116 Manages the Critical Relationship Between VTT/VREF Figure 11: Enter Suspend-to-RAM (STR) Tek Run: 50.0kS/s VDDQ VREF 1 VTT (High-Z) 24 3 S3 Ch1 Ch3 1.00 V 5.00 V Ch2 Ch4 500mV 500mV M 1.00ms Ch3 3.2 V Note: During Suspend-to-RAM, all supply voltages must be maintained within specified data sheet values, including VREF. VTT is not required during STR. For the TPS51116 to enter a Suspend-to-Disk (STD) state, the S5 signal must go LOW. During the STD (S4/S5 state), no power is supplied to the DRAM, and all DRAM data is lost. Upon exiting STD, it is critical that the DDR2 memory is powered up correctly, with a full initialization sequence. This includes the ramp-up of supply voltages and maintaining the required voltage relationships described previously. After all supply voltages are steady, there must be 200µs of stable clocks before CKE goes HIGH, and the DRAM initialization sequence is started. (See any Micron DDR2 data sheet for expanded DRAM initialization requirements.) During the STD, all TPS51116 outputs discharge to GND, including VDD/VDDQ, VTT, and VREF. The TPS51116 has been designed to ensure that VTT and VREF discharge more quickly than VDDQ to guarantee that VDDQ will always be greater than VTT/VREF, as shown in Figure 12 on page 14. PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN 13 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS TPS51116 Manages the Critical Relationship Between VTT/VREF Figure 12: Suspend-to-DISK (STD) Tek Stop: 100kS/s VDDQ 14 S5 2 VTT 3 VREF Ch1 Ch3 1.00 V Ch2 500m V Ch4 500mV 5.00V M 500ms Ch1 900mV Note: After the DRAM has been properly shut down, all supply voltages may be removed, and DRAM contents will be lost PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN 14 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS Load Efficiency Load Efficiency The TPS51116 has a high level of integration, making it easy to use and offering a smaller total solution size and lower total solution cost, without sacrificing performance. One of the most important performance features is the efficiency of the switcher, which is used to power VDD. High efficiency at full loads—such as 10A—is important in reducing the total power dissipation and in extending battery life within the notebook computer. A reduction in total power dissipation translates to a reduction in cost and size. The higher the efficiency, the longer the battery will last when the notebook is on or in an active state. The TPS51116 efficiency at 10A is 90% (input voltage at 12V), which is considered very high, as shown in Figure 13. High efficiency at light loads—such as 10mA—is typically found during a standby condition and is critical in extending battery life when the notebook is in a standby mode. The higher the efficiency, the longer the battery will last while in standby. The TPS51116 has exceptional light-load efficiency that achieves greater than 80% (input voltage at 12V), as shown in Figure 13. The TPS51116 can achieve this high level of efficiency at both 10A and 10mA because of its ability to adapt to the changes in load. At heavy loads—such as 10A—the high efficiency can be achieved because of the TPS51116’s strong gate-drive capability and the gate drive’s adaptive-dead-time control scheme. At light loads—such as 10mA—the TPS51116 enters skip mode, which significantly reduces the switching frequency. Figure 13: Light-Load and Full-Load VDD/VDDQ Efficiency 100 95 Efficiency (%) 90 85 80 75 70 65 60 55 50 0.010 0.100 1.000 10.000 IDDQ (A) PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. TN-47-05 DDR2 POWER SOLUTIONS FOR NOTEBOOKS Summary Summary DDR2 voltage requirements, solution, size, and efficiency are the most important considerations when designing power circuitry in a notebook computer. The TPS51116 is an ideal solution for powering Micron’s DDR2 memory modules because it is optimized for low cost, is in a small total solution size, and provides high performance. The TPS51116 high-level integration requires only 7 external resistors and capacitors, not including the power train for the switcher. Other solutions will use 18 or more external components, even if the switcher is integrated with the LDO. Typically, these notebooks require separate power-management ICs for VDDQ and VTT/VREF. Texas Instruments’ power products can be found at www.ti.com. For notebook applications, DDR2 is an excellent solution, providing ultra-fast datatransfer rates with extremely low operating-power requirements, dynamic ODT termination, and a small footprint. With ODT, there is substantially less termination and signal routing on the motherboard. To ensure functionality, strict guidelines must be followed, making it a challenge to successfully integrate a power solution for a reliable DDR2 notebook design. This technical note identifies for the designer the critical DDR2 voltages and establishes a method to implement power to the DDR2 memory channel. For the latest data sheets, please refer to Micron’s Web site at www.micron.com/ datasheets. PDF: 09005aef8130a7b8 / Source: 09005aef8135f026 TN4705.fm - Rev. B 4/10 EN 16 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved.