128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM DDR SDRAM SMALLOUTLINE DIMM MT4VDDT1664H – 128MB MT4VDDT3264H – 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules Features Figure 1: 200-Pin SODIMM (MO-224) • 200-pin, small-outline dual in-line memory module (DDR SODIMM) • Fast data transfer rates: PC3200 • Utilizes 400 MT/s DDR SDRAM components • 128MB (16 Meg x 64 ) and 256MB (32 Meg x 64) • VDD= VDDQ= +2.6V • VDDSPD = +2.3V to +3.6V • 2.6V I/O (SSTL_2 compatible) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Bidirectional data strobe (DQS) transmitted/ received with data—i.e., source-synchronous data capture • Differential clock inputs (CK and CK#) • Four internal device banks for concurrent operation • Selectable burst lengths: 2, 4, or 8 • Auto precharge option • Auto Refresh and Self Refresh Modes: 7.8125µs maximum average periodic refresh interval • Serial Presence Detect (SPD) with EEPROM • Selectable READ CAS latency for maximum compatibility • Gold edge contacts Table 1: 1.25in. (31.75mm) OPTIONS MARKING • Package 200-pin SODIMM (Standard) 200-pin SODIMM (Lead-free)1 • Memory Clock/Speed/CAS Latency2 5ns (200 MHz), 400 MT/s, CL = 3 • PCB 1.25in. (31.75mm) NOTE: G Y -40B 1. Consult factory for product availability. 2. CL = Device CAS (READ) Latency. Address Table Refresh Count Row Addressing Device Bank Addressing Device Configuration Column Addressing Module Rank Addressing pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 1 128MB 256MB 8K 8K (A0–A12) 4 (BA0, BA1) 256Mb (16 Meg x 16) 512 (A0–A8) 1 (S0#) 8K 8K (A0–A12) 4 (BA0, BA1) 512Mb (32 Meg x 16) 1K (A0–A9) 1 (S0#) ©2004 Micron Technology, Inc. PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Table 2: Part Numbers and Timing Parameters PARTNUMBER MT4VDDT1664HG-40B__ MT4VDDT1664HY-40B__ MT4VDDT3264HG-40B__ MT4VDDT3264HY-40B__ MODULE DENSITY CONFIGURATION MODULE BANDWIDTH MEMORY CLOCK/ DATA RATE CLOCK LATENCY (CL - tRCD - tRP) 128MB 128MB 256MB 256MB 16 Meg x 64 16 Meg x 64 32 Meg x 64 32 Meg x 64 3.2 GB/s 3.2 GB/s 3.2 GB/s 3.2 GB/s 5ns/ 400 MT/s 5ns/ 400 MT/s 5ns/ 400 MT/s 5ns/ 400 MT/s 3-3-3 3-3-3 3-3-3 3-3-3 NOTE: All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT4VDDT1664HG-40BA1. pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Table 3: Pin Assignment (200-Pin SODIMM Front) Table 4: Pin Assignment (200-Pin SODIMM Back) PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 VREF VSS DQ0 DQ1 VDD DQS0 DQ2 VSS DQ3 DQ8 VDD DQ9 DQS1 VSS DQ10 DQ11 VDD CK0 CK0# VSS DQ16 DQ17 VDD DQS2 DQ18 51 53 55 57 59 61 63 65 67 69 71 73 75 77 79 81 83 85 87 89 91 93 95 97 99 VSS DQ19 DQ24 VDD DQ25 DQS3 VSS DQ26 DQ27 VDD DNU DNU VSS DNU DNU VDD DNU NC VSS DNU DNU VDD NC NC A12 101 103 105 107 109 111 113 115 117 119 121 123 125 127 129 131 133 135 137 139 141 143 145 147 149 A9 VSS A7 A5 A3 A1 VDD A10 BA0 WE# S0# NC VSS DQ32 DQ33 VDD DQS4 DQ34 VSS DQ35 DQ40 VDD DQ41 DQS5 VSS 151 DQ42 153 DQ43 155 VDD 157 VDD 159 VSS 161 VSS 163 DQ48 165 DQ49 167 VDD 169 DQS6 171 DQ50 173 VSS 175 DQ51 177 DQ56 179 VDD 181 DQ57 183 DQS7 185 VSS 187 DQ58 189 DQ59 191 VDD 193 SDA 195 SCL 197 VDDSPD 199 NC VREF VSS DQ4 DQ5 VDD DM0 DQ6 VSS DQ7 DQ12 VDD DQ13 DM1 VSS DQ14 DQ15 VDD VDD VSS VSS DQ20 DQ21 VDD DM2 DQ22 52 54 56 58 60 62 64 66 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 98 100 VSS DQ23 DQ28 VDD DQ29 DM3 VSS DQ30 DQ31 VDD DNU DNU VSS DNU DNU VDD DNU NC VSS VSS VDD VDD CKE0 NC A11 102 104 106 108 110 112 114 116 118 120 122 124 126 128 130 132 134 136 138 140 142 144 146 148 150 A8 VSS A6 A4 A2 A0 VDD BA1 RAS# CAS# NC NC VSS DQ36 DQ37 VDD DM4 DQ38 VSS DQ39 DQ44 VDD DQ45 DM5 VSS 152 154 156 158 160 162 164 166 168 170 172 174 176 178 180 182 184 186 188 190 192 194 196 198 200 DQ46 DQ47 VDD CK1# CK1 VSS DQ52 DQ53 VDD DM6 DQ54 VSS DQ55 DQ60 VDD DQ61 DM7 VSS DQ62 DQ63 VDD SA0 SA1 SA2 NC Figure 2: 200-Pin SODIMM Module Layout Front View U1 Back View U4 U2 U5 No Components This Side of Module U3 PIN 1 (all odd pins) PIN 199 PIN 200 Indicates a VDD or VDDQ pin pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 3 (all even pins) PIN 2 Indicates a VSS pin Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Table 5: Pin Descriptions Pin numbers may not correlate with symbols. Refer to Pin Assignment tables on page 3 for more information PIN NUMBERS SYMBOL 118, 119, 120 WE#, CAS#, RAS# 35, 37, 158, 160 CK0, CK0#, CK1, CK1# 96 CKE0 121 S0# 116, 117 BA0, BA1 99, 100, 101, 102, 105, 106, 107, 108, 109, 110, 111, 112, 115 A0–A12 11, 25, 47, 61, 133, 147, 169, 183 DQS0–DQS7 12, 26, 48, 62, 134, 148, 170, 184 DM0–DM7 pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN TYPE DESCRIPTION Input Command Inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered. Input Clock: CK, CK# are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK,and negative edge of CK#. Output data (DQs and DQS) is referenced to the crossings of CK and CK#. Input Clock Enable: CKE HIGH activates and CKE LOW deactivates the internal clock, input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all device banks idle), or ACTIVE POWERDOWN (row ACTIVE in any device bank). CKE is synchronous for POWER-DOWN entry and exit, and for SELF REFRESH entry. CKE is asynchronous for SELF REFRESH exit and for disabling the outputs. CKE must be maintained HIGH throughout read and write accesses. Input buffers (excluding CK, CK# and CKE) are disabled during POWER-DOWN. Input buffers (excluding CKE) are disabled during SELF REFRESH. CKE is an SSTL_2 input but will detect an LVCMOS LOW level after VDD is applied and until CKE is first brought HIGH. After CKE is brought HIGH, it becomes an SSTL_2 input only. Input Chip Selects: S# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when S# is registered HIGH. S# is considered part of the command code. Input Bank Address: BA0 and BA1 define to which device bank an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. Input Address Inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective device bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one device bank (A10 LOW, device bank selected by BA0, BA1) or all device banks (A10 HIGH). The address inputs also provide the op-code during a MODE REGISTER SET command. BA0 and BA1 define which mode register (mode register or extended mode register) is loaded during the LOAD MODE REGISTER command. Input/ Data Strobe: Output with READ data, input with WRITE data. Output DQS is edge-aligned with READ data, centered in WRITE data. Used to capture data. Input Data Write Mask. DM LOW allows WRITE operation. DM HIGH blocks WRITE operation. DM lines do not affect READ operation. 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Table 5: Pin Descriptions Pin numbers may not correlate with symbols. Refer to Pin Assignment tables on page 3 for more information PIN NUMBERS SYMBOL 5, 6, 7, 8, 13, 14, 17, 18, 19, 20, 23, 24, 29, 30, 31, 32, 41, 42, 43, 44, 49, 50, 53, 54, 55, 56, 59, 60, 65, 66, 67, 68, 127, 128, 129, 130, 135, 136, 139, 140, 141, 142, 145, 146, 151, 152, 153, 154, 163, 164, 165, 166, 171, 172, 175, 176, 177, 178, 181, 182, 187, 188, 189, 190 195 DQ0–DQ63 194, 196, 198 SA0–SA2 193 SDA 1, 2 9, 10, 21, 22, 33, 34, 36, 45, 46, 57, 58, 69, 70, 81, 82, 92, 93, 94, 113, 114, 131, 132, 143, 144, 155, 156, 157, 167, 168, 179, 180, 191, 192 3, 4, 15, 16, 27, 28, 38, 39, 40, 51, 52, 63, 64, 75, 76, 87, 88, 90, 103, 104, 125, 126, 137, 138, 149, 150, 159, 161, 162, 173, 174, 185, 186 197 71, 72, 73, 74, 77, 78, 79, 80, 83, 84 85, 95, 97, 98, 99, 122, 123, 128, 199, 200 VREF VDD Input Serial Clock for Presence-Detect: SCL is used to synchronize the presence-detect data transfer to and from the module. Input Presence-Detect Address Inputs: These pins are used to configure the presence-detect device. Input/ Serial Presence-Detect Data: SDA is a bidirectional pin used to Output transfer addresses and data into and out of the presencedetect portion of the module. Supply SSTL_2 reference voltage. Supply Power Supply: +2.6V ±0.1V. VSS Supply Ground. pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN SCL VDDSPD DNU NC TYPE DESCRIPTION Input/ Data I/Os: Data bus. Output Supply Serial EEPROM positive power supply: +2.3V to +3.6V. — Do Not Use: These pins are not connected on these modules, but are assigned pins on other modules in this product family. — No Connect: These pins should be left unconnected. 5 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Figure 3: Functional Block Diagram S0# CS# DQS0 DM0 DQS4 DM4 UDQS UDM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ DQ DQ DQ DQ DQ DQ DQ DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 LDQS LDM DQ DQ DQ DQ DQ DQ DQ DQ DQS1 DM1 DQS2 DM2 UDQS UDM DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ DQ DQ DQ DQ DQ DQ DQ DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 LDQS LDM DQ DQ DQ DQ DQ DQ DQ DQ DQS3 DM3 BA0-BA1 DDR SDRAMs DDR SDRAMs A0-A12 RAS# DDR SDRAMs U1 CS# UDQS UDM DQ DQ DQ DQ DQ DQ DQ DQ DQS7 DM7 SCL WP SERIAL PD U3 A0 A1 CS# U4 CS# U5 LDQS LDM DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 A2 DQ DQ DQ DQ DQ DQ DQ DQ VDDSPD SDA SA0 SA1 SA2 SPD VDD DDR SDRAMs VREF DDR SDRAMs VSS DDR SDRAMs 120 CK1 CK1# DDR SDRAMs U1, U2 DDR SDRAMs U3, U4 2pF 2pF NOTE: Standard modules use the following DDR SDRAM devices: MT46V16M16TG (128MB); MT46V32M16TG (256MB) Unless otherwise stated, all resistors are 22Ω.. Per industry standard, Micron utilizes various component speed grades as referenced in the Module Part Numbering Guide at www.micron.com/numberguide. pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 LDQS LDM DQ DQ DQ DQ DQ DQ DQ DQ DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 120 1. 2. DQ DQ DQ DQ DQ DQ DQ DQ DQS6 DM6 U2 DDR SDRAMs DDR SDRAMs CK0 CK0# DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS5 DM5 DDR SDRAMs CAS# WE# CKE0 UDQS UDM Lead-free modules use the following DDR SDRAM devices: MT46V16M16P (128MB); MT46V32M16P (256MB) 6 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM General Description thereby providing high effective bandwidth by hiding row precharge and activation time. An auto refresh mode is provided, along with a power-saving power-down mode. All inputs are compatible with the JEDEC Standard for SSTL_2. All outputs are SSTL_2, Class II compatible. For more information regarding DDR SDRAM operation, refer to the 256Mb or 512Mb DDR SDRAM component data sheets. The MT4VDDT1664H and MT4VDDT3264H are high-speed CMOS, dynamic random-access, 128MB and 256MB memory modules organized in x64 configuration. DDR SDRAM modules use internally configured quad-bank DDR SDRAMs. DDR SDRAM modules use a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-pre-fetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for DDR SDRAM modules effectively consists of a single 2n-bit wide, one-clock-cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins. A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in data capture at the receiver. DQS is an intermittent strobe transmitted by the DDR SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. Commands (address and control signals) are registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK. Read and write accesses to DDR SDRAM modules are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the device bank and row to be accessed (BA0, BA1 select device bank; A0–A12 select device row). The address bits registered coincident with the READ or WRITE command are used to select the device bank and the starting device column location for the burst access. DDR SDRAM modules provide for programmable READ or WRITE burst lengths of 2, 4, or 8 locations. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. The pipelined, multibank architecture of DDR SDRAM modules allows for concurrent operation, pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN Serial Presence-Detect Operation DDR SDRAM modules incorporate serial presencedetect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes can be programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer. System READ/WRITE operations between the master (system logic) and the slave EEPROM device (DIMM) occur via a standard I2C bus using the DIMM’s SCL (clock) and SDA (data) signals, together with SA (2:0), which provide eight unique DIMM/EEPROM addresses. Write protect (WP) is tied to ground on the module, permanently disabling hardware write protect. Mode Register Definition The mode register is used to define the specific mode of operation of DDR SDRAM devices. This definition includes the selection of a burst length, a burst type, a CAS latency and an operating mode, as shown in Figure 4, Mode Register Definition Diagram, on page 8. The mode register is programmed via the MODE REGISTER SET command (with BA0 = 0 and BA1 = 0) and will retain the stored information until it is programmed again or the device loses power (except for bit A8, which is self-clearing). Reprogramming the mode register will not alter the contents of the memory, provided it is performed correctly. The mode register must be loaded (reloaded) when all device banks are idle and no bursts are in progress, and the controller must wait the specified time before initiating the subsequent operation. Violating either of these requirements will result in unspecified operation. Mode register bits A0–A2 specify the burst length, A3 specifies the type of burst (sequential or interleaved), A4–A6 specify the CAS latency, and or A7–A12 specify the operating mode. 7 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Burst Length If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available nominally coincident with clock edge n + m. The CAS Latency Table indicates the operating frequencies at which each CAS latency setting can be used. Reserved states should not be used as unknown operation or incompatibility with future versions may result. Read and write accesses to DDR SDRAM devices are burst oriented, with the burst length being programmable, as shown in Figure 4, Mode Register Definition Diagram. The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst lengths of 2, 4, or 8 locations are available for both the sequential and the interleaved burst types. Reserved states should not be used, as unknown operation or incompatibility with future versions may result. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst will wrap within the block if a boundary is reached. The block is uniquely selected by A1–Ai when the burst length is set to two, by A2–Ai when the burst length is set to four and by A3–Ai when the burst length is set to eight (where Ai is the most significant column address bit for a given configuration; see Note 5 for Figure 6, Burst Definition Table, on page 9). The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. The programmed burst length applies to both READ and WRITE bursts. Figure 4: Mode Register Definition Diagram BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 14 13 12 11 10 9 8 Operating Mode 0* 0* 7 6 5 4 3 2 1 0 CAS Latency BT Burst Length * M14 and M13 (BA1 and BA0) must be “0, 0” to select the base mode register (vs. the extended mode register). M2 M1 M0 M3 = 0 M3 = 1 0 0 0 Reserved Reserved 0 0 1 2 2 0 1 0 4 4 0 1 1 8 8 1 0 0 Reserved Reserved 1 0 1 Reserved Reserved 1 1 0 Reserved Reserved 1 1 1 Reserved Reserved Burst Type M3 Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit M3. The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address, as shown in Figure 6, Burst Definition Table, on page 9. 0 Sequential 1 Interleaved CAS Latency M6 M5 M4 Read Latency pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN Mode Register (Mx) Burst Length Burst Type The READ latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first bit of output data. The latency can be set to 3, 2.5, or 2 clocks, as shown in Figure 5, CAS Latency Diagram. 0 0 0 Reserved 0 0 1 Reserved 0 1 0 2 0 1 1 3 1 0 0 Reserved 1 0 1 Reserved 1 1 0 2.5 1 1 1 Reserved M12 M11 M10 M9 M8 M7 8 Address Bus M6-M0 Operating Mode 0 0 0 0 0 0 Valid Normal Operation 0 0 0 0 1 0 Valid Normal Operation/Reset DLL - - - - - - - All other states reserved Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Table 6: BURST LENGTH STARTING COLUMN ADDRESS 4 8 A0 0 1 A1 A0 0 0 0 1 1 0 1 1 A2 A1 A0 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 2. 3. 4. 5. COMMAND TYPE = INTERLEAVED T2 READ NOP NOP T2n T3 T3n NOP CL = 2 DQS 0-1 1-0 0-1 1-0 0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 0-1-2-3 1-0-3-2 2-3-0-1 3-2-1-0 DQ CK# T0 T1 T2 READ NOP NOP T2n T3 T3n CK COMMAND NOP CL = 2.5 DQS 0-1-2-3-4-5-6-7 1-2-3-4-5-6-7-0 2-3-4-5-6-7-0-1 3-4-5-6-7-0-1-2 4-5-6-7-0-1-2-3 5-6-7-0-1-2-3-4 6-7-0-1-2-3-4-5 7-0-1-2-3-4-5-6 0-1-2-3-4-5-6-7 1-0-3-2-5-4-7-6 2-3-0-1-6-7-4-5 3-2-1-0-7-6-5-4 4-5-6-7-0-1-2-3 5-4-7-6-1-0-3-2 6-7-4-5-2-3-0-1 7-6-5-4-3-2-1-0 DQ T0 T1 T2 READ NOP NOP T2n T3 T3n CK# CK COMMAND NOP CL = 3 DQS DQ For a burst length of two, A1–Ai select the two-dataelement block; A0 selects the first access within the block. For a burst length of four, A2–Ai select the four-dataelement block; A0–A1 select the first access within the block. For a burst length of eight, A3–Ai select the eightdata-element block; A0–A2 select the first access within the block. Whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block. i = 8 (128MB); i = 9 (256MB) Table 7: T1 CK NOTE: 1. T0 CK# ORDER OF ACCESSES WITHIN A BURST TYPE = SEQUENTIAL 2 Figure 5: CAS Latency Diagram Burst Definition Table Burst Length = 4 in the cases shown Shown with nominal tAC, tDQSCK, and tDQSQ TRANSITIONING DATA Operating Mode The normal operating mode is selected by issuing a MODE REGISTER SET command with bits A7–A12 each set to zero, and bits A0–A6 set to the desired values. A DLL reset is initiated by issuing a MODE REGISTER SET command with bits A7 and A9–A12 each set to zero, bit A8 set to one, and bits A0–A6 set to the desired values. Although not required by the Micron device, JEDEC specifications recommend when a LOAD MODE REGISTER command is issued to reset the DLL, it should always be followed by a LOAD MODE REGISTER command to select normal operating mode. All other combinations of values for A7–A12 are reserved for future use and/or test modes. Test modes and reserved states should not be used because unknown operation or incompatibility with future versions may result. CAS Latency (CL) Table ALLOWABLE OPERATING CLOCK FREQUENCY (MHZ) SPEED CL = 2 CL = 2.5 CL = 3 -40B 75 ≤ f ≤ 133 75 ≤ f ≤ 167 133 ≤ f ≤ 200 pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN DON’T CARE 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Extended Mode Register disabled the DLL for the purpose of debug or evaluation. (When the device exits self refresh mode, the DLL is enabled automatically.) Any time the DLL is enabled, 200 clock cycles with CKE HIGH must occur before a READ command can be issued. The extended mode register controls functions beyond those controlled by the mode register; these additional functions are DLL enable/disable and output drive strength. These functions are controlled via the bits shown in Figure 4, Mode Register Definition Diagram, on page 8. The extended mode register is programmed via the LOAD MODE REGISTER command to the mode register (with BA0 = 1 and BA1 = 0) and will retain the stored information until it is programmed again or the device loses power. The enabling of the DLL should always be followed by a LOAD MODE REGISTER command to the mode register (BA0/BA1 both LOW) to reset the DLL. The extended mode register must be loaded when all device banks are idle and no bursts are in progress, and the controller must wait the specified time before initiating any subsequent operation. Violating either of these requirements could result in unspecified operation. Figure 6: Extended Mode Register Definition Diagram BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 14 13 12 11 10 9 8 7 6 5 Operating Mode 01 11 4 3 2 1 0 DS DLL E1 Address Bus Extended Mode Register (Ex) E0 DLL 0 Enable 1 Disable Drive Strength Output Drive Strength 0 Normal The normal full drive strength for all outputs is specified to be SSTL2, Class II. The x16 DDR SDRAM devices used in these modules support an option for reduced drive. The reduced drive option is intended for lighter load and point-to-point environments. For detailed information on output drive strength options, refer to 256Mb or 512Mb DDR SDRAM component data sheets. 1 Reduced E11 E10 E9 E8 E7 E6 E5 E4 E3 E22 E1, E0 0 0 0 0 0 0 0 0 0 0 Valid – – – – – – – – – – – Operating Mode Normal Operation All other states reserved NOTE: 1. 2. DLL Enable/Disable BA1 and BA0 (E14 and E13) must be “0, 1” to select the Extended Mode Register (vs. the base Mode Register). QFC# is not supported. The DLL must be enabled for normal operation. DLL enable is required during power-up initialization and upon returning to normal operation after having pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Commands Figure 8, Commands Truth Table, and Figure 9, DM Operation Truth Table, below, provide a general reference of available commands. For a more detailed Table 8: description of commands and operations, refer to the 256Mb or 512Mb DDR SDRAM component data sheet. Commands Truth Table CKE is HIGH for all commands shown except SELF REFRESH; all states and sequences not shown are illegal or reserved NAME (FUNCTION) DESELECT (NOP) NO OPERATION (NOP) ACTIVE (Select device bank and activate row) READ (Select device bank and column, and start READ burst) WRITE (Select device bank and column, and start WRITE burst) BURST TERMINATE PRECHARGE (Deactivate row in device bank or banks) AUTO REFRESH or SELF REFRESH (Enter self refresh mode) LOAD MODE REGISTER CS# RAS# H L L L L L L L L X H L H H H L L L CAS# WE# X H H L L H H L L X H H H L L L H L ADDR NOTES X X Bank/Row Bank/Col Bank/Col X Code X Op-Code 1 1 2 3 3 4 5 6, 7 8 NOTE: 1. 2. 3. 4. 5. 6. 7. 8. DESELECT and NOP are functionally interchangeable. BA0–BA1 provide device bank address and A0–A12 provide row address. BA0–BA1 provide device bank address; A0–A8 (128MB) or A0–A9 (256MB), provide column address; A10 HIGH enables the auto precharge feature (nonpersistent), and A10 LOW disables the auto precharge feature. Applies only to read bursts with auto precharge disabled; this command is undefined (and should not be used) for READ bursts with auto precharge enabled and for WRITE bursts. A10 LOW: BA0–BA1 determine which device bank is precharged. A10 HIGH: all device banks are precharged and BA0BA1 are “Don’t Care.” This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care” except for CKE. BA0–BA1 select either the mode register or the extended mode register (BA0 = 0, BA1 = 0 select the mode register; BA0 = 1, BA1 = 0 select extended mode register; other combinations of BA0–BA1 are reserved). A0–A12 provide the op-code to be written to the selected mode register. Table 9: DM Operation Truth Table Used to mask write data; provided coincident with the corresponding data NAME (FUNCTION) WRITE Enable WRITE Inhibit pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 11 DM DQS L H Valid X Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Absolute Maximum Ratings Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the opera- tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Voltage on VDD Supply Relative to VSS . . . . . . . . . . . . . . . . . . . . . -1V to +3.6V Voltage on VDDQ Supply Relative to VSS . . . . . . . . . . . . . . . . . . . . -1V to +3.6V Voltage on VREF and Inputs Relative to VSS . . . . . . . . . . . . . . . . . . . . -1V to +3.6V Voltage on I/O Pins Relative to VSS . . . . . . . . . . . . -0.5V to VDDQ +0.5V Operating Temperature, TA (ambient) . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C Storage Temperature (plastic) . . . . . . -55°C to +150°C Short Circuit Output Current. . . . . . . . . . . . . . . 50mA Table 10: DC Electrical Characteristics and Operating Conditions Notes: 1–5, 14; notes appear on pages 17–20; 0°C ≤ TA ≤ +70°C PARAMETER/CONDITION SYMBOL MIN MAX UNITS NOTES Supply Voltage I/O Supply Voltage VDD VDDQ 2.5 2.5 2.7 2.7 V V I/O Reference Voltage I/O Termination Voltage (system) Input High (Logic 1) Voltage Input Low (Logic 0) Voltage INPUT LEAKAGE CURRENT Any input 0V ≤ VIN ≤ VDD, Vref pin 0V ≤ VIN ≤ 1.35V (All other pins not under test = 0V) VREF VTT VIH(DC) VIL(DC) V V V V 32, 37, 49 32, 37, 40, 49 6, 40 7, 40 25 25 Command/ Address, RAS#, CAS#, WE#, CKE, S# CK, CK# DM DQ, DQS OUTPUT LEAKAGE CURRENT (DQ pins are disabled; 0V ≤ VOUT ≤ VDDQ) OUTPUT LEVELS High Current (VOUT = VDDQ - 0.373V, minimum VREF, minimum VTT) Low Current (VOUT = 0.373V, maximum VREF, maximum VTT) OUTPUT LEVELS (Reduced drive option) High Current (VOUT = VDDQ - 0.373V, minimum VREF, minimum VTT) Low Current (VOUT = 0.373V, maximum VREF, maximum VTT) 0.49 × VDDQ 0.51 × VDDQ VREF - 0.04 VREF + 0.04 VREF + 0.15 VDD + 0.3 -0.3 VREF - 0.15 -8 8 µA 47 IOZ -4 -2 -5 4 2 5 µA 47 IOH IOL -16.8 16.8 – – mA mA 33, 35 IOH IOL -9 9 – – mA mA 34, 35 II Table 11: AC Input Operating Conditions Notes: 1–5, 14; notes appear on pages 17–20; 0°C ≤ TA ≤ +70°C; VDD = VDDQ = +2.6V ±0.1V PARAMETER/CONDITION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage I/O Reference Voltage pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN SYMBOL MIN MAX UNITS NOTES VIH(AC) VIL(AC) VREF(AC) VREF + 0.310 – 0.49 × VDDQ – VREF - 0.310 0.51 × VDDQ V V V 12, 25, 36 12, 25, 36 6 12 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Table 12: IDD Specifications and Conditions – 128MB Module DDR SDRAM component values only Notes: 1–5, 8, 10, 14, 48; notes appear on pages 17–20; 0°C ≤ TA ≤ +70°C; VDD = VDDQ = +2.6V ±0.1V MAX PARAMETER/CONDITION t t OPERATING CURRENT: One device bank; Active-Precharge; RC = RC (MIN); t CK = tCK (MIN); DQ, DM and DQS inputs changing once per clock cyle; Address and control inputs changing once every two clock cycles OPERATING CURRENT: One device bank; Active -Read Precharge; Burst = 4; tRC = tRC (MIN); tCK = tCK (MIN); IOUT = 0mA; Address and control inputs changing once per clock cycle PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle; Power-down mode; tCK = tCK (MIN); CKE = (LOW) IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle; tCK = tCK MIN; CKE = HIGH; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS, and DM ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active; Power-down mode; tCK = tCK (MIN); CKE = LOW ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device bank; Active-Precharge; tRC = tRAS (MAX); tCK = tCK (MIN); DQ, DM andDQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK = tCK (MIN); IOUT = 0mA OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle tREFC = tRFC (MIN) AUTO REFRESH CURRENT tREFC = 7.8125µs SELF REFRESH CURRENT: CKE ≤ 0.2V OPERATING CURRENT: Four device bank interleaving READs (BL = 4) with auto precharge, tRC = tRC (MIN); tCK = tCK (MIN); Address and control inputs change only during Active READ or WRITE commands pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 13 SYM -40B UNITS NOTES IDD0 540 mA 20, 42 IDD1 740 mA 20, 42 IDD2P 16 mA IDD2F 240 mA 21, 28, 44 45 IDD3P 160 mA IDD3N 280 mA 21, 28, 44 20 IDD4R 1,040 mA 20, 42 IDD4W 860 mA 20 IDD5 IDD5A IDD6 IDD7 1,040 24 16 2,040 mA mA mA mA 24, 44 24, 44 9 20, 43 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Table 13: IDD Specifications and Conditions – 256MB Module DDR SDRAM component values only Notes: 1–5, 8, 10, 14, 48; notes appear on pages 17–20; 0°C ≤ TA ≤ +70°C; VDD = VDDQ = +2.6V ±0.1V MAX PARAMETER/CONDITION t t OPERATING CURRENT: One device bank; Active-Precharge; RC = RC (MIN); t CK = tCK (MIN); DQ, DM and DQS inputs changing once per clock cyle; Address and control inputs changing once every two clock cycles OPERATING CURRENT: One device bank; Active -Read Precharge; Burst = 4; tRC = tRC (MIN); tCK = tCK (MIN); IOUT = 0mA; Address and control inputs changing once per clock cycle PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle; Power-down mode; tCK = tCK (MIN); CKE = (LOW) IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle; tCK = tCK MIN; CKE = HIGH; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS, and DM ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active; Power-down mode; tCK = tCK (MIN); CKE = LOW ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device bank; Active-Precharge; tRC = tRAS (MAX); tCK = tCK (MIN); DQ, DM andDQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK = tCK (MIN); IOUT = 0mA OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle tREFC = tRFC (MIN) AUTO REFRESH CURRENT tREFC = 7.8125µs SELF REFRESH CURRENT: CKE ≤ 0.2V OPERATING CURRENT: Four device bank interleaving READs (BL = 4) with auto precharge, tRC = tRC (MIN); tCK = tCK (MIN); Address and control inputs change only during Active READ or WRITE commands pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 14 SYM -40B UNITS NOTES IDD0 620 mA 20, 42 IDD1 780 mA 20, 42 IDD2P 20 mA IDD2F 220 mA 21, 28, 44 45 IDD3P 180 mA IDD3N 240 mA 21, 28, 44 20 IDD4R 840 mA 20, 42 IDD4W 860 mA 20 IDD5 IDD5A IDD6 IDD7 1,380 44 24 1,920 mA mA mA mA 24, 44 24, 44 9 20, 43 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Table 14: Capacitance Note: 11; notes appearon pages 17–20 PARAMETER SYMBOL MIN MAX UNITS CIO CI1 CI2 4.0 8.0 6.0 5.0 12.0 8.0 pF pF pF Input/Output Capacitance: DQ, DQS, DM Input Capacitance: Command and Address, S#, CKE Input Capacitance: CK, CK# Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC Operating Conditions Notes: 1–5, 12-15, 29; notes appear on pages 17–20; 0°C ≤ TA ≤ +70°C; VDD = VDDQ = +2.6V ±0.1V AC CHARACTERISTICS -40B PARAMETER UNITS NOTES SYMBOL MIN MAX Access window of DQs from CK/CK# tAC -0.70 +0.70 ns CK high-level width tCH 0.55 tCK 26 CK low-level width tCL 0.45 0.55 tCK 26 5 7.5 ns 41, 46 6 13 ns 41, 46 7.5 13 Clock cycle time CL = 3 CL = 2.5 CL = 2 tCK tCK (3) (2.5) tCK (2) 0.45 DQ and DM input hold time relative to DQS tDH 0.40 ns 23, 27 DQ and DM input setup time relative to DQS tDS DQ and DM input pulse width (for each input) Access window of DQS from CK/CK# 0.40 ns 23, 27 tDIPW 1.75 ns 27 tDQSCK -0.60 +0.60 ns DQS input high pulse width tDQSH 0.35 tCK DQS input low pulse width tDQSL 0.35 tCK DQS-DQ skew, DQS to last DQ valid, per group, per access tDQSQ Write command to first DQS latching transition tDQSS DQS falling edge to CK rising - setup time t DQS falling edge from CK rising - hold time t DSS DSH Half clock period tHP Data-out high-impedance window from CK/CK# tHZ Data-out low-impedance window from CK/CK# tLZ Address and control input hold time (fast slew rate) tIH Address and control input setup time (fast slew rate) tIS Address and control input hold time (slow slew rate) tIH Address and control input setup time (slow slew rate) tIS 0.72 0.40 ns 1.28 tCK 0.20 0.20 t CK t CK ns 30 ns 16, 38 -0.70 ns 16, 38 0.6 ns 12 0.6 ns 12 S 0.6 ns 12 S 0.6 ns 12 F F tCH,tCL +0.70 Address and Control input pulse width (for each input) tIPW 2.2 ns LOAD MODE REGISTER command cycle time tMRD 10 ns DQ-DQS hold, DQS to first DQ to go non-valid, per access tQH tHP -tQHS ns Data hold skew factor tQHS ACTIVE to READ with Auto Precharge command tRAP 15 ACTIVE to PRECHARGE command tRAS 40 pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 15 22, 23 0.50 22, 23 ns ns 70,000 ns 31 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC Operating Conditions (Continued) Notes: 1–5, 12-15, 29; notes appear on pages 17–20; 0°C ≤ TA ≤ +70°C; VDD = VDDQ = +2.6V ±0.1V AC CHARACTERISTICS -40B PARAMETER SYMBOL MIN UNITS NOTES MAX tRC 55 ns AUTO REFRESH command period tRFC 70 ns ACTIVE to READ or WRITE delay tRCD 15 ns tRP 15 ns 0.9 1.1 tCK 39 0.6 tCK 39 ACTIVE to ACTIVE/AUTO REFRESH command period PRECHARGE command period DQS read preamble tRPRE DQS read postamble tRPST 0.4 ACTIVE bank a to ACTIVE bank b command tRRD DQS write preamble DQS write preamble setup time DQS write postamble Write recovery time 10 ns tWPRE 0.25 tCK tWPRES 0 ns 18, 19 tWPST 0.4 tCK 17 tWR 15 ns 2 tCK tWTR Internal WRITE to READ command delay na Data valid output window 44 tQH 0.6 - tDQSQ ns 22 REFRESH to REFRESH command interval tREFC 70.3 µs 21 Average periodic refresh interval tREFI 7.8 µs 21 Terminating voltage delay to VDD tVTD 0 Exit SELF REFRESH to non-READ command tXSNR 70 ns Exit SELF REFRESH to READ command tXSRD 200 tCK pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 16 ns Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Notes 1. All voltages referenced to VSS. 2. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. 3. Outputs measured with equivalent load: 12. VTT Output (VOUT) 50Ω Reference Point 30pF 13. 14. 4. AC timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK#), and parameter specifications are guaranteed for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 1V/ns in the range between VIL (ACV) and VIH (AC). 5. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above [below] the DC input LOW [HIGH] level). 6. VREF is expected to equal VDDQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise (non-common mode) on VREF may not exceed ±2 percent of the DC value. Thus, from VDDQ/2, VREF is allowed ±25mV for DC error and an additional ±25mV for AC noise. This measurement is to be taken at the nearest VREF by-pass capacitor. 7. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF. 8. IDD is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time at CL = 3 for -40B with the outputs open. 9. Enables on-chip refresh and address counters. 10. IDD specifications are tested after the device is properly initialized, and is averaged at the defined cycle rate. 11. This parameter is sampled. VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V, VREF = VSS, f = 100 MHz, TA = 25°C, VOUT (DC) = VDDQ/2, VOUT (peak to peak) = pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 15. 16. 17. 18. 19. 20. 21. 17 0.2V. DM input is grouped with I/O pins, reflecting the fact that they are matched in loading. For slew rates < 1 V/ns and ≥ to 0.5 Vns. If the slew rate is < 0.5V/ns, timing must be derated: tIS has an additional 50ps per each 100 mV/ns reduction in slew rate from 500mV/ns, while tIH is unaffected. If the slew rate exceeds 4.5 V/ns, functionality is uncertain. For -40B, slew rates must be ≥ 0.5 V/ns. The CK/CK# input reference level (for timing referenced to CK/CK#) is the point at which CK and CK# cross; the input reference level for signals other than CK/CK# is VREF. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE ≤ 0.3 x VDDQ is recognized as LOW. The output timing reference level, as measured at the timing reference point indicated in Note 3, is VTT. t HZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving (HZ) or begins driving (LZ). The intent of the Don’t Care state after completion of the postamble is the DQS-driven signal should either be high, low, or high-Z and that any signal transition within the input switching region must follow valid input requirements. If DQS transitions to HIGH above VIH (DC) MIN, then it must not transition to LOW below VIH (DC) MIN prior to tDQSH (MIN). This is not a device limit. The device will operate with a negative value, but system performance could be degraded due to bus turnaround. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE command. The case shown (DQS going from High-Z to logic LOW) applies when no WRITEs were previously in progress on the bus. If a previous WRITE was in progress, DQS could be HIGH during this time, depending on tDQSS. MIN (tRC or tRFC) for IDD measurements is the smallest multiple of tCK that meets the minimum absolute value for the respective parameter. tRAS (MAX) for IDD measurements is the largest multiple of tCK that meets the maximum absolute value for tRAS. The refresh period is 64ms. This equates to an average refresh rate of 7.8125µs. However, an AUTO REFRESH command must be asserted at least once every 70.3µs; burst refreshing or postMicron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. bounding lines of the V-I curve of Figure 7, Pull-Down Characteristics, on page 19. b. The variation in driver pull-down current within nominal limits of voltage and temperature is expected, but not guaranteed, to lie within the inner bounding lines of the V-I curve of Figure 7, Pull-Down Characteristics, on page 19. c. The full variation in driver pull-up current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines of the V-I curve of Figure 8, Pull-Up Characteristics, on page 19. d. The variation in driver pull-up current within nominal limits of voltage and temperature is expected, but not guaranteed, to lie within the inner bounding lines of the V-I curve of Figure 8, Pull-Up Characteristics, on page 19. e. The full variation in the ratio of the maximum to minimum pull-up and pull-down current should be between 0.71 and 1.4, for device drain-to-source voltages from 0.1V to 1.0V, and at the same voltage and temperature. f. The full variation in the ratio of the nominal pull-up to pull-down current should be unity ±10 percent, for device drain-to-source voltages from 0.1V to 1.0V. 34. Reduced Output Drive Curves: a. The full variation in driver pull-down current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines of the V-I curve of Figure 9, Reduced Output Pull-Down Characteristics, on page 19. b. The variation in driver pull-down current within nominal limits of voltage and temperature is expected, but not guaranteed, to lie within the inner bounding lines of the V-I curve of Figure 9, Reduced Output Pull-Down Characteristics, on page 19. c. The full variation in driver pull-up current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines of the V-I curve of Figure 10, Reduced Output Pull-Up Characteristics, on page 19. d. The variation in driver pull-up current within nominal limits of voltage and temperature is expected, but not guaranteed, to lie within the inner bounding lines of the V-I curve of Figure 10, Reduced Output Pull-Up Characteristics, on page 19. ing by the DRAM controller greater than eight refresh cycles is not allowed. The valid data window is derived by achieving other specifications: tHP (tCK/2), tDQSQ, and tQH (tQH = tHP - tQHS). The data valid window derates directly porportional with the clock duty cycle and a practical data valid window can be derived. The clock has a maximum duty cycle variation of 45/55, beyond which functionality is uncertain. Each byte lane has a corresponding DQS. This limit is actually a nominal value and does not result in a fail value. CKE is HIGH during REFRESH command period (tRFC [MIN]) else CKE is LOW (i.e., during standby). To maintain a valid level, the transitioning edge of the input must: a. Sustain a constant slew rate from the current AC level through to the target AC level, VIL (AC) or VIH (AC). b. Reach at least the target AC level. c. After the AC target level is reached, continue to maintain at least the target DC level, VIL (DC) or VIH (DC). JEDEC specifies CK and CK# input slew rate must be ≥ 1 V/ns (2 V/ns differentially). DQ and DM input slew rates must not deviate from DQS by more than 10 percent. If the DQ/ DM/DQS slew rate is less than 0.5V/ns, timing must be derated: 50ps must be added to tDS and t DH for each 100mv/ns reduction in slew rate. If slew rate exceeds 4 V/ns, functionality is uncertain. For -40B, slew rates must be ≥ 0.5 V/ns. VDD must not vary more than 4 percent if CKE is not active while any device bank is active. The clock is allowed up to ±150ps of jitter. Each timing parameter may vary by the same amount. t HP min is the lesser of tCL minimum and tCH minimum actually applied to the device CK and CK# inputs, collectively during device bank active. READs and WRITEs with auto precharge may be issued after tRAS(MIN) has been satisfied prior to the internal precharge command is issued. Any positive glitch in the nominal voltage must be less than 1/3 of the clock and not more than +300mV or 2.9V maximum, whichever is less. Any negative glitch must be less than 1/3 of the clock cycle and not exceed either -200mV or 2.4V minimum, whichever is more positive. The average cannot be below the +2.6V minimum. Normal Output Drive Curves: a. The full variation in driver pull-down current from minimum to maximum process, temperature and voltage will lie within the outer pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 18 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Figure 7: Pull-Down Characteristics Figure 8: Pull-Up Characteristics 160 0 -20 um 140 Maxim Maximum -40 120 IOUT (mA) IOUT (mA) 80 Nominal low 60 -80 -100 Nom -120 inal -140 Minimum 40 Nominal high -60 high Nominal 100 -160 20 -180 -200 0 0.0 0.5 1.0 1.5 2.0 0.0 2.5 0.5 1.0 1.5 2.0 2.5 VDDQ - VOUT (V) VOUT (V) Figure 9: Reduced Output Pull-Down Characteristics Figure 10: Reduced Output Pull-Up Characteristics 0 80 -10 um 70 im Max 60 40 IOUT (mA) Nominal high 50 IOUT (mA) low Min imu m Nominal low -20 Minimum -30 Nominal low -40 -50 30 Minimum 20 -60 M No ax im -70 mi um 10 na lh igh -80 0.0 0 0.0 0.5 1.0 1.5 2.0 0.5 1.0 1.5 2.0 2.5 VDDQ - VOUT (V) 2.5 VOUT (V) e. The full variation in the ratio of the maximum to minimum pull-up and pull-down current should be between 0.71 and 1.4, for device drain-to-source voltages from 0.1V to 1.0V, and at the same voltage. f. The full variation in the ratio of the nominal pull-up to pull-down current should be unity ±10 percent, for device drain-to-source voltages from 0.1V to 1.0V. 35. The voltage levels used are derived from a minimum VDD level and the referenced test load. In practice, the voltage levels obtained from a properly terminated bus will provide significantly different voltage values. 36. VIH overshoot: VIH (MAX) = VDDQ + 1.5V for a pulse width ≤ 3ns and the pulse width can not be greater than 1/3 of the cycle rate. VIL undershoot: pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 37. 38. 39. 40. 19 VIL (MIN) = -1.5V for a pulse width ≤ 3ns and the pulse width can not be greater than 1/3 of the cycle rate. VDD and VDDQ must track each other. tHZ (MAX) will prevail over tDQSCK (MAX) + tRPST (MAX) condition. tLZ (MIN) will prevail over tDQSCK (MIN) + tRPRE (MAX) condition. tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving (tRPST), or begins driving (tRPRE). During initialization, VDDQ, VTT, and VREF must be equal to or less than VDD + 0.3V. Alternatively, VTT may be 1.35V maximum during power up, even if VDD/VDDQ are 0V, provided a minimum of 42Ω of series resistance is used between the VTT supply and the input pin. Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM 41. The current Micron part operates below the slowest JEDEC operating frequency of 83 MHz. As such, future die may not reflect this option. 42. Random addressing changing and 50 percent of data changing at every transfer. 43. Random addressing changing and 100 percent of data changing at every transfer. 44. CKE must be active (high) during the entire time a refresh command is executed. That is, from the time the AUTO REFRESH command is registered, CKE must be active at each rising clock edge, until tREF later. 45. IDD2N specifies the DQ, DQS, and DM to be driven to a valid high or low logic level. IDD2Q is similar to IDD2F except IDD2Q specifies the address and control inputs to remain stable. pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 46. 47. 48. 49. 20 Although IDD2F, IDD2N, and IDD2Q are similar, IDD2F is “worst case.” Whenever the operating frequency is altered, not including jitter, the DLL is required to be reset. This is followed by 200 clock cycles (before READ commands). Leakage number reflects the worst case leakage possible through the module pin, not what each memory device contributes. When an input signal is HIGH or LOW, it is defined as a steady state logic high or logic low. This is the DC voltage supplied at the DRAM and is inclusive of all noise up to 20MHz. Any noise above 20MHz at the DRAM generated from any source other than that of the DRAM itself may not exceed the DC voltage range of 2.6V ±100mV. Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Initialization Figure 11: Initialization Flow Diagram To ensure device operation the DRAM must be initialized as described below: 1. Simultaneously apply power to VDD and VDDQ. 2. Apply VREF and then VTT power. 3. Assert and hold CKE at a LVCMOS logic low. 4. Provide stable CLOCK signals. 5. Wait at least 200µs. 6. Bring CKE high and provide at least one NOP or DESELECT command. At this point the CKE input changes from a LVCMOS input to a SSTL2 input only and will remain a SSTL_2 input unless a power cycle occurs. 7. Perform a PRECHARGE ALL command. 8. Wait at least tRP time, during this time NOPs or DESELECT commands must be given. 9. Using the LMR command program the Extended Mode Register (E0 = 0 to enable the DLL and E1 = 0 for normal drive or E1 = 1 for reduced drive, E2 through En must be set to 0; where n = most significant bit). 10. Wait at least tMRD time, only NOPs or DESELECT commands are allowed. 11. Using the LMR command program the Mode Register to set operating parameters and to reset the DLL. Note at least 200 clock cycles are required between a DLL reset and any READ command. 12. Wait at least tMRD time, only NOPs or DESELECT commands are allowed. 13. Issue a PRECHARGE ALL command. 14. Wait at least tRP time, only NOPs or DESELECT commands are allowed. 15. Issue an AUTO REFRESH command (Note this may be moved prior to step 13). 16. Wait at least tRFC time, only NOPs or DESELECT commands are allowed. 17. Issue an AUTO REFRESH command (Note this may be moved prior to step 13). 18. Wait at least tRFC time, only NOPs or DESELECT commands are allowed. 19. Although not required by the Micron device, JEDEC requires a LMR command to clear the DLL bit (set M8 = 0). If a LMR command is issued the same operating parameters should be utilized as in step 11. 20. Wait at least tMRD time, only NOPs or DESELECT commands are allowed. 21. At this point the DRAM is ready for any valid command. Note 200 clock cycles are required between step 11 (DLL Reset) and any READ command. pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN Step 21 1 VDD and VDDQ Ramp 2 Apply VREF and VTT 3 CKE must be LVCMOS Low 4 Apply stable CLOCKs 5 Wait at least 200us 6 Bring CKE High with a NOP command 7 PRECHARGE ALL 8 Assert NOP or DESELECT for tRP time 9 Configure Extended Mode Register 10 Assert NOP or DESELECT for tMRD time 11 Configure Load Mode Register and reset DLL 12 Assert NOP or DESELECT for tMRD time 13 PRECHARGE ALL 14 Assert NOP or DESELECT for tRP time 15 Issue AUTO REFRESH command 16 Assert NOP or DESELECT commands for tRFC 17 Issue AUTO REFRESH command 18 Assert NOP or DESELECT for tRFC time 19 Optional LMR command to clear DLL bit 20 Assert NOP or DESELECT for tMRD time 21 DRAM is ready for any valid command Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM SPD Clock and Data Conventions SPD Acknowledge Data states on the SDA line can change only during SCL LOW. SDA state changes during SCL HIGH are reserved for indicating start and stop conditions (as shown in Figure 12, Data Validity, and Figure 13, Definition of Start and Stop). Acknowledge is a software convention used to indicate successful data transfers. The transmitting device, either master or slave, will release the bus after transmitting eight bits. During the ninth clock cycle, the receiver will pull the SDA line LOW to acknowledge that it received the eight bits of data (as shown in Figure 14, Acknowledge Response from Receiver). The SPD device will always respond with an acknowledge after recognition of a start condition and its slave address. If both the device and a WRITE operation have been selected, the SPD device will respond with an acknowledge after the receipt of each subsequent eight-bit word. In the read mode the SPD device will transmit eight bits of data, release the SDA line and monitor the line for an acknowledge. If an acknowledge is detected and no stop condition is generated by the master, the slave will continue to transmit data. If an acknowledge is not detected, the slave will terminate further data transmissions and await the stop condition to return to standby power mode. SPD Start Condition All commands are preceded by the start condition, which is a HIGH-to-LOW transition of SDA when SCL is HIGH. The SPD device continuously monitors the SDA and SCL lines for the start condition and will not respond to any command until this condition has been met. SPD Stop Condition All communications are terminated by a stop condition, which is a LOW-to-HIGH transition of SDA when SCL is HIGH. The stop condition is also used to place the SPD device into standby power mode. Figure 12: Data Validity Figure 13: Definition of Start and Stop SCL SCL SDA SDA DATA STABLE DATA CHANGE DATA STABLE START BIT STOP BIT Figure 14: Acknowledge Response from Receiver SCL from Master 8 9 Data Output from Transmitter Data Output from Receiver Acknowledge pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 22 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Table 16: EEPROM Device Select Code Most significant bit (b7) is sent first DEVICE TYPE IDENTIFIER SELECT CODE Memory Area Select Code (two arrays) Protection Register Select Code CHIP ENABLE RW b7 b6 b5 b4 b3 b2 b1 b0 1 0 0 1 1 1 0 0 SA2 SA2 SA1 SA1 SA0 SA0 RW RW Table 17: EEPROM Operating Modes MODE RW BIT WC BYTES 1 0 1 1 0 0 VIH or VIL VIH or VIL VIH or VIL VIH or VIL VIL VIL 1 1 1 ≥1 1 ≤ 16 Current Address Read Random Address Read Sequential Read Byte Write Page Write INITIAL SEQUENCE START, Device Select, RW = ‘1’ START, Device Select, RW = ‘0’, Address reSTART, Device Select, RW = ‘1’ Similar to Current or Random Address Read START, Device Select, RW = ‘0’ START, Device Select, RW = ‘0’ Figure 15: SPD EEPROM Timing Diagram tF t HIGH tR t LOW SCL t SU:STA t HD:STA t SU:DAT t HD:DAT t SU:STO SDA IN t DH t AA t BUF SDA OUT UNDEFINED pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 23 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Table 18: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to VSS; VDDSPD = +2.3V to +3.6V PARAMETER/CONDITION SUPPLY VOLTAGE INPUT HIGH VOLTAGE: Logic 1; All inputs INPUT LOW VOLTAGE: Logic 0; All inputs OUTPUT LOW VOLTAGE: IOUT = 3mA INPUT LEAKAGE CURRENT: VIN = GND to VDD OUTPUT LEAKAGE CURRENT: VOUT = GND to VDD STANDBY CURRENT: SCL = SDA = VDD - 0.3V; All other inputs = VSS or VDD POWER SUPPLY CURRENT: SCL clock frequency = 100 KHz SYMBOL MIN MAX UNITS VDDSPD VIH VIL VOL ILI ILO ISB ICC 2.3 VDDSPD × 0.7 -1 – – – – – 3.6 VDDSPD + 0.5 VDDSPD × 0.3 0.4 10 10 30 2 V V V V µA µA µA mA Table 19: Serial Presence-Detect EEPROM AC Operating Conditions All voltages referenced to VSS; VDDSPD = +2.3V to +3.6V PARAMETER/CONDITION SCL LOW to SDA data-out valid Time the bus must be free before a new transition can start Data-out hold time SDA and SCL fall time Data-in hold time Start condition hold time Clock HIGH period Noise suppression time constant at SCL, SDA inputs Clock LOW period SDA and SCL rise time SCL clock frequency Data-in setup time Start condition setup time Stop condition setup time WRITE cycle time SYMBOL MIN MAX UNITS NOTES tAA 0.2 1.3 200 0.9 µs µs ns ns µs µs µs ns µs µs KHz ns µs µs ms 1 tBUF tDH tF tHD:DAT tHD:STA tHIGH 300 0 0.6 0.6 tI tLOW 50 1.3 tR 0.3 400 fSCL tSU:DAT tSU:STA t SU:STO tWRC 100 0.6 0.6 10 2 2 3 4 NOTE: 1. 2. 3. 4. To avoid spurious START and STOP conditions, a minimum delay is placed between SCL = 1 and the falling or rising edge of SDA. This parameter is sampled. For a reSTART condition, or following a WRITE cycle. The SPD EEPROM WRITE cycle time (tWRC) is the time from a valid stop condition of a write sequence to the end of the EEPROM internal erase/program cycle. During the WRITE cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resistor, and the EEPROM does not respond to its slave address. pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 24 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Table 20: Serial Presence-Detect Matrix “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW” BYTE DESCRIPTION 0 1 2 3 4 5 6 7 8 9 Number of SPD Bytes Used by Micron Total Number of Bytes in SPD Device Fundamental Memory Type Number of Row Addresses on Assembly Number of Column Addresses on Assembly Number of Physical Ranks on DIMM Module Data Width Module Data Width (Continued) Module Voltage Interface Levels 10 SDRAM Access from Clock, tAC (CAS Latency = 3) Module Configuration Type Refresh Rate/type SDRAM Device Width (Primary DDR SDRAM) Error-checking DDR SDRAM Data Width Minimum Clock Delay, Back-to-Back Random Column Access Burst Lengths Supported Number of Banks on DDR SDRAM Device CAS Latencies Supported CS Latency WE Latency SDRAM Module Attributes SDRAM Device Attributes: General 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 ENTRY (VERSION) MT4VDDT1664H MT4VDDT3264H 128 256 DDR SDRAM 13 9, 10 1 64 0 SSTL 2.5V 5ns (-40B) 80 08 07 0D 09 01 40 00 04 50 80 08 07 0D 0A 01 40 00 04 50 0.7ns (-40B) 70 70 None 7.8µs/SELF 16 None 1 clock 00 82 10 00 01 00 82 10 00 01 0E 04 1C 01 02 20 C1 0E 04 1C 01 02 20 C1 60 60 70 70 75 75 75 75 3C 3C 10ns (-40B) 28 28 15ns (-40B) 3C 3C SDRAM Cycle Time, tCK (CAS Latency = 3) 2, 4, 8 4 3, 2.5 and 2 0 1 Unbuffered/Diff. Clock Fast/Concurrent Auto Precharge 6ns (Set for PC2700 SDRAM Cycle Time, tCK (CAS Latency = 2.5) Compatibility) SDRAM Access From Clock, tAC (CAS Latency = 2.5) 0.7ns (Set for PC2700 Compatibility) 7.5ns (Set for PC2100/ SDRAM Cycle Time, tCK (CAS Latency = 2) PC1600 Compatibility) 0.75ns (Set for PC2100/ SDRAM Access From CK, tAC (CAS Latency = 2) PC1600 Compatibility) 15ns (-40B) Minimum Row Precharge Time, tRP Minimum Row Active to Row Active, tRRD t Minimum RAS# to CAS# Delay, RCD 40ns (-40B) 28 28 Address and Command Setup Time, tIS 128MB, 256MB 0.6ns (-40B) 20 60 40 60 33 Address and Command Hold Time, tIH 0.6ns (-40B) 60 60 34 tDS 0.40ns (-40B) 40 40 tDH 0.40ns (-40B) 40 40 00 00 31 32 Minimum RAS# Pulse Width, Module Rank Density tRAS Data/Data Mask Input Setup Time, 35 Data/Data Mask Input Hold Time, 36-40 Reserved pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 25 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Table 20: Serial Presence-Detect Matrix (Continued) “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW” BYTE 41 DESCRIPTION ENTRY (VERSION) MT4VDDT1664H MT4VDDT3264H 55ns (-40B) 37 37 42 Min Active Auto Refresh Time, tRC Minimum Auto Refresh to Active/Auto Refresh Command Period, tRFC 70ns (-40B) 46 46 43 SDRAM Device Max Cycle Time, tCKMAX 12ns (-40B) 30 30 0.40ns (-40B) 28 28 0.5ns (-40B) 50 50 00 01 00 11 68 2C 00 01 - 0C Variable Data 01 - 09 00 Variable Data Variable Data Variable Data Variable Data 00 01 00 11 89 2C 00 01 - 0C Variable Data 01 - 09 00 Variable Data Variable Data Variable Data Variable Data 44 45 46-61 47 48–61 62 63 64 65-71 72 73-90 91 92 93 94 95-98 99127 t SDRAM Device Max DQS-DQ Skew Time, DQSQ SDRAM Device Max Read Data Hold Skew Factor, t QHS Reserved DIMM Height Reserved SPD Revision Checksum for Bytes 0-62 Manufacturer’s JEDEC ID Code Manufacturer’s JEDEC IDCode Manufacturing Location Module Part Number (ASCII) PCB Identification Code Identification Code (Continued) Year of Manufacture in BCD Week of Manufacturein BCD Module Serial Number Manufacturer-Specific Data (RSVD) pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN Release 1.1 -40B MICRON (Continued) 01–12 1-9 0 26 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. 128MB, 256MB (x64, SR) PC3200 200-PIN DDR SDRAM SODIMM Figure 16: 200-Pin SODIMM Dimensions FRONT VIEW 0.075 (1.90) MAX 2.667 (67.75) 2.656 (67.45) 0.079 (2.00) R (2X) U1 U2 U4 0.071 (1.80) (2X) U5 1.256 (31.90) 1.244 (31.60) U3 0.787 (20.00) TYP 0.236 (6.00) 0.096 (2.44) 0.079 (2.00) 0.043 (1.10) 0.035 (0.90) 0.039 (.99) TYP 0.018 (0.46) TYP 0.024 (0.61) TYP PIN 199 PIN 1 2.504 (63.60) TYP BACK VIEW No Components This Side of Module PIN 200 PIN 2 NOTE: MAX All dimensions are in inches (millimeters); MIN or typical where noted. Data Sheet Designation Released (No Mark): This data sheet contains minimum and maximum limits specified over the complete power supply and temrperature range for production devices. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. ® 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: [email protected], Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks and/or service marks of Micron Technology, Inc. All other trademarks are the property of their respective owners. pdf: 09005aef80b56d1b, source: 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev. D 9/04 EN 27 Micron Technology, Inc., reserves the right to change products or specifications without notice.. ©2004 Micron Technology, Inc