1.5V Drive Pch MOSFET RQ1A070ZP zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) zFeatures 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) zApplications Switching Abbreviated symbol : YJ zPackaging specifications Package Type Each lead has same dimensions zInner circuit Taping (8) (7) (6) (5) TR Code Basic ordering unit (pieces) 3000 RQ1A070ZP ∗2 ∗1 zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for Tr1 and Tr2.> Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg (1) Limits −12 ±10 ±7 ±28 −1 −28 1.5 150 −55 to +150 Unit V V A A A A W °C °C (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (4) (1) Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Limits Unit Rth(ch-a) ∗ 83.3 °C/W ∗ Mounted on a ceramic board. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.08 - Rev.A RQ1A070ZP Data Sheet zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −12 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.3 − Static drain-source on-state − ∗ RDS (on) resistance − − Forward transfer admittance Yfs ∗ 12 Input capacitance − Ciss Output capacitance Coss − Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge Qgd ∗ − Typ. Max. − − − − 8 11 15 19 − 7400 800 750 35 95 310 190 58 11 10 ±10 − −1 −1.0 12 16 23 38 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −7A, VGS= −4.5V ID= −3.5A, VGS= −2.5V ID= −3.5A, VGS= −1.8V ID= −1.4A, VGS= −1.5V VDS= −6V, ID= −7A VDS= −6V VGS=0V f=1MHz VDD −6V ID= −3.5A VGS= −4.5V RL 1.7Ω RG=10Ω VDD −6V ID= −7A VGS= −4.5V RL 0.86Ω / RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. Unit VSD ∗ − − −1.2 V Conditions IS= −7A, VGS=0V ∗ Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.08 - Rev.A RQ1A070ZP Data Sheet zElectrical characteristics curves 6 4 VGS=-1.2V 2 8 6 VGS= -1.2V VGS= -1.3V 4 2 VGS=-1.0V 10 V = -6V DS Pulsed Ta=25℃ Pulsed VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V DRAIN CURRENT : -ID [A] 8 10 Ta=25℃ Pulsed VGS= -10V VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] 10 0 0.2 0.4 0.6 0.8 0.1 Ta= -25℃ Ta=75℃ Ta=25℃ 0.01 0.001 0 1 Ta=125℃ VGS= -1.0V 0 0 1 2 4 6 8 DRAIN-SOURCE VOLTAGE : -VDS[V] 10 0 0.5 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 10 10 1 1 10 0.1 DRAIN CURRENT : -ID [A] 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 10 1 1 1 VGS= -1.5V Pulsed 100 10 Fig.6 Static Drain-Source On-State DRAIN CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Resistance vs. Drain Current(Ⅲ) 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 DRAIN CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 3/4 10 DRAIN CURRENT : -ID [A] 1 0.1 0.1 Resistance vs. Drain Current(Ⅱ) Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 1 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 DRAIN CURRENT : -ID [A] Fig.4 Static Drain-Source On-State VGS= -1.8V Pulsed VGS= -2.5V Pulsed 100 10 FORWARD TRANSFER ADMITTANCE : |Yfs|[S] 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 1 1000 1000 VGS= -4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE R DS(on) [mΩ] 1000 Ta=25℃ Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 1000 1.5 Fig.3 Typical Transfer Characteristics Fig.2 Typical output characteristics(Ⅱ) Fig.1 Typical output characteristics(Ⅰ) 1 GATE-SOURCE VOLTAGE : -VGS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] 10 VDS= -6V Pulsed 10 Ta= -25°C Ta=25°C Ta=75°C Ta= 125°C 1 0.1 1 10 DRAIN CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 2009.08 - Rev.A RQ1A070ZP Data Sheet 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 VGS=0V Pulsed 0.01 0 0.2 0.4 0.6 0.8 1 40 td(off) ID = -7.0A 30 ID = -3.5A 20 10 Ta=25℃ VDD = -6V VGS= -4.5V RG=10Ω Pulsed tf 1000 100 tr td(on) 0 1.2 10 0 SOURCE-DRAIN VOLTAGE : -VSD [V] 2 4 6 8 10 0.01 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.12 Switching Characteristics 100000 5 Ta=25℃ VDD = -6V 4 ID = -7A RG=10Ω Pulsed 3 T a=25℃ f=1MHz V GS=0V CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : -VGS [V] 10000 Ta=25°C Pulsed SWITCHING TIME : t [ns] REVERSE DRAIN CURRENT : -Is [A] 10 2 1 Ciss 10000 1000 Crss Coss 100 0 0 10 20 30 40 50 60 0.01 70 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] TOTAL GATE CHARGE : Qg [nC] Fig.14 Typical Capacitance vs. Drain-Source Voltage Fig.13 Dynamic Input Characteristics zMeasurement circuits Pulse width ID VDS VGS VGS 10% 50% 90% RL D.U.T. 10% VDD RG 50% VDS 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit 10% tf toff Fig.1-2 Switching Waveforms VG ID VDS VGS RL D.U.T. IG(Const.) RG Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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