ROHM RSH110N03

4V Drive Nch MOSFET
RSH110N03
Dimensions (Unit : mm)
Structure
Silicon N-channel MOSFET
SOP8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Each lead has same dimensions
Packaging specifications
Package
Type
Inner circuit
(8)
Taping
(7)
(6)
(5)
(8) (7) (6) (5)
TB
Code
Basic ordering unit (pieces)
2500
RSH110N03
∗2
(1) (2) (3) (4)
∗1
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
30
20
±11
±44
1.6
22
2
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Symbol
Rth (ch-a) ∗
Limits
62.5
Unit
°C / W
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Thermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
○
1/3
2009.12 - Rev.A
RSH110N03
Data Sheet
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Parameter
−
30
−
1.0
−
−
−
8.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
7.6
10.3
11.2
−
1300
410
250
9
17
60
30
17
3.3
7.1
10
−
1
2.5
10.7
14.5
15.7
−
−
−
−
−
−
−
−
−
−
−
Static drain-source on-starte
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗
RDS (on)
Yfs ∗
Ciss
Coss
Crss
td (on) ∗
tr ∗
td (off) ∗
tf ∗
Qg ∗
Qgs ∗
Qgd ∗
Unit
μA
V
μA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=20V, VDS=0V
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VDS=10V, ID=1mA
ID=11A, VGS=10V
ID=11A, VGS=4.5V
ID=11A, VGS=4V
ID=11A, VDS=10V
VDS=10V
VGS=0V
f=1MHz
ID=5.5A, VDD 15V
VGS=10V
RL=2.73Ω
RG =10Ω
VDD 15V
VGS=5V
ID=11A
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
IS=6.4A, VGS=0V
∗Pulsed
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
○
2/3
2009.12 - Rev.A
RSH110N03
Data Sheet
Electrical characteristic curves
10000
Crss
100
10
0.01
0.1
1
10
td (off)
100
tr
10
td (on)
1
0.01
100
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : ID (A)
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
1
0.1
1
10
100
2
1
0
2
4
6
8
10
12
250
ID=11A
ID=5.5A
150
100
50
0
0
2
4
6
8
10
12
14
10
100
VGS=0V
Pulsed
VGS=4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
10
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.0
16
10
1
0.1
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
100
VGS=4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
1
0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
○
3/3
18
1
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1000
16
Fig.3 Dynamic Input Characteristics
100
200
14
TOTAL GATE CHARGE : Qg (nC)
GATE-SOURCE VOLTAGE : VGS (V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
100
3
Ta=25°C
Pulsed
Fig.4 Typical Transfer Characteristics
VGS=10V
Pulsed
4
0
100
300
GATE-SOURCE VOLTAGE : VGS (V)
1000
10
5
Fig.2 Switching Characteristics
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
VDS=10V
Pulsed
1
Ta=25°C
7 VDD=15V
ID=11A
6 RG=10Ω
Pulsed
DRAIN CURRENT : ID (A)
DRAIN-SOURCE VOLTAGE : VDS (V)
100
GATE-SOURCE VOLTAGE : VGS (V)
Coss
tf
1000
SOURCE CURRENT : Is (A)
Ciss
1000
8
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Ta=25°C
f=1MHz
VGS=0V
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
10000
100
2009.12 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of
any of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
R0039A