2N3904 Silicon NPN Epitaxial General Purpose Amplifier REA03G0001-0200Z Rev.2.00 Jul.22.2004 Features • Low saturation voltage • General purpose amplifier and switching • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier Outline TO-92 (1) 1. Emitter 2. Base 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature VCBO VCEO VEBO IC PC Tj 60 40 6 200 625 150 V V V mA mW °C Storage temperature Tstg –55 to +150 °C Rev.2.00, Jul.22.2004, page 1 of 5 Symbol Ratings Unit 2N3904 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Base cutoff current Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO IBL ICEX hFE Min 60 40 6 — — 40 70 100 60 30 — — 0.65 — Typ — — — — — — — — — — — — — — Max — — — 50 50 — — 300 — — 0.2 0.3 0.85 0.95 Unit V V V nA nA — — — — — V V V V Test Conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCE = 30 V, VEB = 3 V VCE = 30 V, VEB = 3 V VCE = 1 V, IC = 100 µA VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 10 mA VCE = 1 V, IB = 50 mA VCE = 1 V, IB = 100 mA IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Collector to emitter saturation voltage VCE(sat) Base to emitter saturation voltage VBE(sat) Gain bandwidth product fT — 540 — MHz VCE = 20 V, IC = 10 mA Collector output capacitance Cob — 1.9 — pF VCE = 5 V, IE = 0, f = 1 MHz Collector input capacitance Cib — 5.9 — pF VCE = 0.5 V, IE = 0, f = 1 MHz Noise figure NF — 1.0 — dB VCE = 5 V, IC = 0.1 mA, f = 1 MHz, Rg = 1 kΩ Rev.1.00, Jul.22.2004, page 2 of 5 2N3904 Main Characteristics Typical Output Characteristics (1) Total Power Dissipation Curve 100 800 90 600 Collector Current IC (mA) Total Power Dissipation PC (mW) 700 500 400 300 200 1.0 mA 80 0.9 mA 70 0.7 mA 0.8 mA 0.6 mA 60 0.5 mA 50 0.4 mA 40 0.3 mA 30 0.2 mA 20 100 IB=0.1 mA 10 0 50 100 150 Ambient Temperature Ta (°C) 0 200 0.5 1.0 1.5 Collector to Emitter Voltage VCE (V) 2.0 Typical Transfer Characteristics Typical Output Characteristics (2) 20 0 100 1.0 mA 15 0.8 mA 0.7 mA 0.6 mA 10 0.5 mA 0.4 mA 0.3 mA 5 10 Collector Current IC (mA) Collector Current IC (mA) 0.9 mA 1 0.1 0.2 mA IB=0.1 mA 5 10 15 35 20 25 30 Collector to Emitter Voltage VCE (V) 40 DC Current Transfer Ratio vs. Collector Current 350 DC Current Transfer Ratio hFE 300 250 -25°C 200 25°C 150 75°C 100 50 0 0.01 0.1 1 10 Collector Current IC (mA) Rev.1.00, Jul.22.2004, page 3 of 5 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Base to Emitter Voltage VBE (V) 100 1.2 1.1 Base to Emitter & Collector to Emitter Saturation Voltage vs. Collector Current IC = 10IB 1.0 0.9 VBE(sat), VCE(sat) (V) 0 75°C 25°C -25°C 0.01 0.1 Base to Emitter & Collector to Emitter Saturation Voltage 0 0.8 VBE(sat) -25°C 25°C 75°C 0.7 0.6 0.5 0.4 75°C 0.3 0.2 0.1 0 0.1 25°C VCE(sat) 1 10 Collector Current IC (mA) -25°C 100 Base to Emitter & Collector to Emitter Saturation Voltage vs. Collector Current Collector Input & Output Capacitance vs. Voltage 10 1 IC = 10IB IC = 20IB IC = 50IB IC = 50IB IC = 20IB IC = 10IB VBE(sat) VCE(sat) 0.1 0.01 0.1 1 1000 10 100 Collector Current IC (mA) Collector Input & Output Capacitance Cib, Cob (pF) Base to Emitter & Collector To Emitter Saturation Voltage VBE(sat), VCE(sat) (V) 2N3904 10 IE = 0 Cib Cob 1 0.1 100 500 450 Gain Bandwidth Product fT (MHz) IC = 10 IB toff Switching Time (ns) 10 Gain Bandwidth Product vs. Collector Current VCC = 3V 100 1 Voltage (V) Switching Time vs. Collector Current 1000 f = 1MHz tstg ton 10 td 400 10V 350 300 VCE=1V 250 2V 6V 200 150 100 50 1 1 1000 10 100 Collector Current IC (mA) 0 1 10 Collector Current IC (mA) 100 VCC VCC +10.9V +10.9V 275 10K 275 10K -0.5V < 1ns -9.1V < 1ns Figure 1 Delay and rise time equivalent test circuit Rev.1.00, Jul.22.2004, page 4 of 5 Figure 2 Storage and fall time equivalent test circuit 2N3904 Package Dimensions As of January, 2003 Unit: mm 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Package Code JEDEC JEITA Mass (reference value) TO-92 (1) Conforms Conforms 0.25 g Ordering Information Part Name 2N3904 Quantity 2500pcs Shipping Container Radial Taping (Hold Box) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, Jul.22.2004, page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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