2SC5874S Transistors Medium power transistor (30V, 1.0A) 2SC5874S !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2086S 4.0 2.0 (15min.) 3min. 3.0 SPT 0.45 2.5 0.5 0.45 5.0 (1) Emitter (2) Collector (3) Base (1) (2) (3) Taping specifications Symbol : C5874S !Applications Small signal low frequency amplifier High speed switching !Structure NPN Silicon epitaxial planar transistor !Packaging specifications Package Type Taping TP Code Basic ordering unit (pieces) 5000 2SC5874S !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Parameter VEBO 6 V DC IC 1.0 A Pulsed ICP 2.0 A ∗1 Power dissipation PC 300 mW ∗2 Junction temperature Tj 150 °C Tstg −55 to 150 °C Emitter-base voltage Collector current Range of storage temperature ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land 1/3 2SC5874S Transistors !Electrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. 30 30 6 − − Typ. − − − − − Max. − − − 1.0 1.0 Unit V V V µA µA Collector-emitter saturation voltage VCE (sat) − 150 300 mV hFE 120 − 390 − fT − 250 − MHz Corrector output capacitance Cob − 10 − pF Turn-on time Storage time Fall time Ton Tstg Tf − − − 30 120 35 − − − ns ns ns DC current gain Transition frequency Condition IC=1mA IC=100µA IE=100µA VCB=20V VEB=4V IC=500mA IB=50mA VCE=2V IC=100mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=1.0A IB1=100mA IB2= −100mA VCC 25V ∗1 ∗2 ∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement circuits !hFE RANK Q 120−270 R 180−390 !Electrical characteristic curves SWITCHING TIME : (ns) 100ms 10ms 1ms 0.1 DC 0.01 Single non repetitive Pulsed 0.001 0.1 1 10 100 Tf Ton 10 0.01 100 0.1 1 100 Ta=100°C Ta=25°C Ta= −40°C 10 1 0.001 10 VCE=2V 0.01 0.1 1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe Operating Area Fig.2 Switching Time Fig.3 DC Current Gain vs. Collector Current (Ι) 1000 100 VCE=5V VCE=3V VCE=2V 10 1 0.001 10 Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DC CURRENT GAIN : hFE Tstg 1000 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current (ΙΙ) 10 1 Ta=100°C Ta=25°C Ta= −40°C 0.1 0.01 0.001 10 IC / IB=10 / 1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (A) 1 Ta=25°C VCC=25V IC / IB=10 / 1 DC CURRENT GAIN : hFE 1000 10 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) 10 Ta=25°C 1 IC / IB=20 / 1 IC / IB=10 / 1 0.1 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) 2/3 2SC5874S Transistors 1 Ta=100°C Ta=25°C Ta= −40°C 0.1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=100°C Ta=25°C Ta= −40°C 0.1 0 0.5 1 1000 Ta=25°C VCE=10V 100 10 1.5 BASE TO EMITTER VOLTAGE : VBE (V) Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current 100 1 0.01 10 VCE=2V TRANSITION FREQUENCY : fT (MHz) 10 IC / IB=10 / 1 COLLECTOR CURRENT : IC (A) BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) 10 1 0.001 0.01 0.1 1 10 EMITTER CURRENT : IE (A) Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency : fT Ta=25°C f=1MHz 10 1 0.1 1 10 100 BASE TO COLLECTOR VOLTAGE : VCB (V) Fig.10 Collector Output Capacitance : Cob !Switching characteristics measurement circuits RL=50Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle ≤ 1% IB1 IB2 Base current waveform 90% IC Collector current waveform 10% Ton Tstg Tf 3/3