CYStech Electronics Corp. Spec. No. : C465Y3 Issued Date : 2012.04.13 Revised Date : 2012.05.19 Page No. : 1/ 8 50V P-CHANNEL Enhancement Mode MOSFET MTP3J15Y3 BVDSS ID RDSON@-10V RDSON@-5V RDSON@-4V [email protected] Features • Low gate charge • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package Equivalent Circuit -50V -130mA 8Ω (MAX) 10Ω (MAX) 12Ω (MAX) 32Ω (MAX) Outline SOT-723 MTP3J15Y3 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Tj=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-10V Pulsed Drain Current (Note 1) Maximum Power Dissipation @ TA=25℃ (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Rth,ja Tj, Tstg Limits -50 ±20 -130 -520 150 833 -55~+150 Unit V V mA mA mW °C/W °C Note : 1. Pulse width≤ 10μs, duty cycle≤2%. 2. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s. MTP3J15Y3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C465Y3 Issued Date : 2012.04.13 Revised Date : 2012.05.19 Page No. : 2/ 8 Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg Source-Drain Diode *IS *ISM *VSD Min. Typ. Max. Unit Test Conditions -50 -1 20 - -1.4 5 6 - -2 ±10 -1 -25 8 10 12 32 V V mS μA VGS=0V, ID=-250μA VDS=VGS, ID=-1mA VDS=-3V, ID=-10mA VGS=±20V, VDS=0 VDS=-50V, VGS=0 VDS=-50V, VGS=0, Tj=125°C VGS=-10V, ID=-100mA VGS=-5V, ID=-100mA VGS=-4V, ID=-10mA VGS=-2.5V, ID=-1mA - 25 7 2 2.5 2 7.3 3 1.2 - - -0.85 -130 -520 -1.2 Ω pF VDS=-5V, VGS=0, f=1MHz ns VDS=-15V, ID=-100mA, VGS=-5V, RG=3.3Ω nC VDS=-40V, ID=-500mA, VGS=-5V mA V VGS=0V, IS=-130mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTP3J15Y3 MTP3J15Y3 Package SOT-723 (Pb-free lead plating & halogen-free package) Shipping Marking 8000 pcs / Tape & Reel PD CYStek Product Specification CYStech Electronics Corp. Spec. No. : C465Y3 Issued Date : 2012.04.13 Revised Date : 2012.05.19 Page No. : 3/ 8 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 600 -ID, Drain Current (mA) -VGS=4.5V 400 -VGS=4V 300 -VGS=3.5V 200 -VGS=3V 100 -VGS=2.5V ID=-250μA, VGS=0V -BVDSS, Normalized Drain-Source Breakdown Voltage -VGS=5V 500 1.2 1 0.8 -VGS=2V 0.6 0 0 1 2 3 4 5 6 7 -VDS, Drain-Source Voltage(V) 8 9 -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 12 1.2 -VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(Ω) 11 -VGS=3V 10 -VGS=5V 9 8 7 6 VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 5 -VGS=10V 4 0.001 0.01 0.1 -ID, Drain Current(A) 0.2 0 1 R DS(ON) , Normalized Static DrainSource On-State Resistance 18 16 14 12 ID=-100mA ID=-30mA 8 0.5 2 20 10 0.1 0.2 0.3 0.4 -IDR, Reverse Drain Current (A) Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON) , Static Drain-Source OnState Resistance(Ω) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 6 4 2 1.8 1.6 1.4 VGS=-5V, ID=-100mA 1.2 1 0.8 VGS=-10V, ID=-100mA 0.6 0.4 0 0 MTP3J15Y3 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C465Y3 Issued Date : 2012.04.13 Revised Date : 2012.05.19 Page No. : 4/ 8 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage 100 Capacitance---(pF) Ciss 10 C oss Crss ID=-250μA 1.4 1.2 1 0.8 0.6 0.4 1 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 -40 -20 100 -VGS, Gate-Source Voltage(V) 6 4 2 VDS=-40V ID=-500mA 8 6 4 2 0 0.01 0.1 1 Pulse Width(s) 10 0 100 Maximum Safe Operating Area 1.2 1.8 2.4 Qg, Total Gate Charge(nC) 3 3.6 0.16 100μs 1ms 0.1 10ms 100m TA=25°C, Tj=150°C, VGS=-10V, RθJA=883°C/W Single Pulse 0.6 Maximum Drain Current vs JunctionTemperature -ID, Maximum Drain Current(A) -ID, Drain Current (A) 1 0.01 60 80 100 120 140 160 Gate Charge Characteristics TJ(MAX) =150°C TA=25°C RθJA=833°C/W 0 0.001 20 40 10 10 8 0 Tj, Junction Temperature(°C) Single Pulse Power Rating, Junction to Ambient (Note on page 1) Power (W) 1.6 1s DC 0.14 0.12 0.1 0.08 0.06 0.04 TA=25°C, VGS=-10V, RθJA=833°C/W 0.02 0 0.001 0.01 MTP3J15Y3 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C465Y3 Issued Date : 2012.04.13 Revised Date : 2012.05.19 Page No. : 5/ 8 Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 0.2 600 -VDS=10V PD, Power Dissipation(W) -ID, Drain Current (mA) 500 400 300 200 Surface mounted on FR-4 board of 1 in² copper pad 0.15 0.1 0.05 100 0 0 0 1 2 3 4 -VGS , Gate-Source Voltage(V) 5 0 6 20 40 60 80 100 120 TA, Ambient Temperature(℃) 140 160 Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t 1/t2 3.TJM-TC=PDM*ZθJC(t) 4.RθJA=833 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTP3J15Y3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C465Y3 Issued Date : 2012.04.13 Revised Date : 2012.05.19 Page No. : 6/ 8 Reel Dimension Carrier Tape Dimension MTP3J15Y3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C465Y3 Issued Date : 2012.04.13 Revised Date : 2012.05.19 Page No. : 7/ 8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP3J15Y3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C465Y3 Issued Date : 2012.04.13 Revised Date : 2012.05.19 Page No. : 8/ 8 SOT-723 Dimension Marking: PD 3-Lead SOT-723 Plastic Surface Mounted Package CYStek Package Code: Y3 Style: Pin 1.Gate 2.Source 3.Drain *Typical Millimeters Min. Max. 0.000 0.500 0.000 0.050 0.170 0.270 0.270 0.370 0.000 0.150 DIM A A1 b b1 c Inches Min. Max. 0.000 0.020 0.000 0.002 0.007 0.011 0.011 0.015 0.000 0.006 DIM D E E1 e θ Millimeters Min. Max. 1.150 1.250 1.150 1.250 0.750 0.850 0.800* 7° REF Inches Min. Max. 0.045 0.049 0.045 0.049 0.030 0.033 0.031* 7° REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP3J15Y3 CYStek Product Specification