Eon Silicon Solution Inc.

Eon Silicon Solution Inc.
Application Note
Eon Flash EN29LV160B
vs
MXIC Flash MX29LV160D
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
Rev. A, Issue Date: 2009/12/01
©2005 Eon Silicon Solution Inc. www.ession.com
Eon Silicon Solution Inc.
1. INTRODUCTION
The application note introduces how to implement a system design from MXIC
MX29LV160D Flash to Eon EN29LV160B Flash.
2. GENERAL FUNCTION COMPARISON TABLE:
The following table is major features of these two devices.
Features
voltage range
Pin to Pin
Access time
Secured Silicon
Sector region
EN29LV160B
2.7 ~ 3.6
Compatible (for 48 TSOP
Except Pin 14 = NC)
Compatible (for 48 TFBGA
Except Ball B3 = NC)
70ns
MX29LV160D
2.7 ~ 3.6
Compatible (for 48 TSOP
Except Pin 14 = WP#/ACC)
Compatible (for 48 TFBGA
Except Ball B3 = WP#/ACC)
70ns
None
None
16K Byte X 1 sector / 8K Byte x
2 sectors /32K Byte X1 sector /
Sector Architecture
64K Byte X 31 sectors
boot sectors at Top or Bottom
Byte/Word mode
Yes
None
WP#/ACC
VID and VHH
10.5V - 11.5V
Max (High Voltage)
CFI Compliant
Yes
Erase
Yes
Suspend/Resume
Continuous Sector
None
Erasure
Minimum
endurance cycle
Package
16K Byte X 1 sector / 8K Byte x
2 sectors /32K Byte X1 sector /
64K Byte X 31 sectors
boot sectors at Top or Bottom
Yes
Yes
100K
Yes
Yes
Yes
100K
48-pin 12mm x 20mm TSOP
48-ball 6mm x 8mm TFBGA
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
9.5V - 10.5V
2
Rev. A, Issue Date: 2009/12/01
48-pin 12mm x 20mm TSOP
48-ball 6 mm x 8 mm FBGA
48-ball 4 mm x 6 mm WFBGA
48-ball 4 mm x 6 mm XFLGA
©2005 Eon Silicon Solution Inc. www.ession.com
Eon Silicon Solution Inc.
3. HARDWARE CONSIDERATIONS
3.1 ICC comparison
Current
EN29LV160B
Typ
Read ICC1
MX29LV160D
Unit
Max
Typ
Max
9
16
5
12
mA
Write ICC2
20
30
15
30
mA
Standby ICC3
1
5.0
5
15
μA
3.2 Pin Configuration
48 pin TSOP (Type 1)
EN29LV160BT(B)-70TIP
MX29LV160DT(B)TC(I) -70G
NC
WP#/ACC
EN29LV160BT(B)-70BIP
MX29LV160DT(B)XBC(I) -70G
NC
WP#/ACC
Pin 14
48 ball 6 x 8 mm TFBGA
Ball B3
3.3 WP#/ACC feature:
EN29LV160B: No
MX29LV160D: Support
3.4 Max VID comparison
MX29LV160D Vhv (High Voltage) range is 9.5V and 10.5V. But EN29LV160B VID
range is 10.5V~11.5V.
Any voltage level higher than 11.5V would damage the device, possibly.
4. SOFTWARE CONSIDERATIONS
Except manufacture ID, there is no difference in Device ID, and Autoselect functions
for EN29LV160B and MX29LV160D are the same.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
Rev. A, Issue Date: 2009/12/01
©2005 Eon Silicon Solution Inc. www.ession.com
Eon Silicon Solution Inc.
4.1 Manufacturer, Device Identification and Autoselect Information
Eon
MXIC
Manufacture ID:
7Fh (A8 = “0”),
1Ch (A8 = “1”).
Manufacture ID:
C2h
Part No.
Device ID
Part No.
Device ID
EN29LV160BT
22C4h
MX29LV160DT
22C4h
EN29LV160BB
2249h
MX29LV160DB
2249h
For EN29LV160B autoselect mode table
For MX29LV160D autoselect mode table
4.2. Continuous Sector Erasure
The EN29LV160B doesn’t support Continuous Sector Erasure function. Users must
issue another sector erase command for the next sector to be erased after the
previous one is completed for EN29LV160B.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
Rev. A, Issue Date: 2009/12/01
©2005 Eon Silicon Solution Inc. www.ession.com
Eon Silicon Solution Inc.
5. PERFORMANCE DIFFERENCES
5.1 Power-on and Reset Timings
Test
Setup
Parameter
Description
tVCS
Vcc Setup Time
RESET# Pulse Width (During
Embedded Algorithms)
RESET# Pulse Width (NOT
During Embedded Algorithms)
Reset# High Time Before Read
RY/BY# Recovery Time ( to
CE#, OE# go low)
RY/BY# Recovery Time ( to
WE# go low)
Reset# Pin Low (During
Embedded Algorithms) to Read
or Write
Reset# Pin Low (NOT During
Embedded Algorithms) to Read
or Write
tRP1
tRP2
tRH
tRB1
tRB2
tREADY1
tREADY2
EN29LV160B MX29LV160D
Min.
50µs
200µs
Min.
10us
10µs
Min.
500ns
500ns
Min.
50ns
70ns
Min.
0ns
0ns
Min.
50ns
50ns
Max.
20µs
20µs
Max.
500ns
500ns
5.2 ERASE AND PROGRAM PERFORMANCE
The erasing and programming performance comparison.
EN29LV160B
MX29LV160D
Typ
Max
Typ
Max
0.1
2
0.7
2
sec
Chip Erase Time
4
35
15
32
sec
Byte Programming Time
8
200
9
300
µs
Word Programming Time
8
200
11
360
µs
Byte
16.8
50.4
18
54
sec
Word
8.4
25.2
12
36
sec
Parameter
Sector Erase Time
Chip Programming
Time
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
Rev. A, Issue Date: 2009/12/01
Unit
©2005 Eon Silicon Solution Inc. www.ession.com
Eon Silicon Solution Inc.
Revisions List
Revision No Description
Date
A
2009/12/01
Initial Release
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
Rev. A, Issue Date: 2009/12/01
©2005 Eon Silicon Solution Inc. www.ession.com