2N6548 2N6549 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6548 series types are NPN silicon Darlington transistors designed for amplifier and driver applications where high gain at a high collector current is important. MARKING: FULL PART NUMBER TO-202 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage SYMBOL VCBO VCES UNITS V 40 V 40 V 12 V IC IB 2.0 A 0.1 A PD PD 2.0 W 10 W TJ, Tstg ΘJA -65 to +150 °C Thermal Resistance 62.5 °C/W Thermal Resistance ΘJC 12.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=30V IEBO VEB=10V BVCBO lC=100μA 2N6548 MIN MAX 100 2N6549 MIN MAX 100 Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature VCEO VEBO 50 UNITS nA - 100 - 100 nA 50 - 50 - V BVCES lC=100μA 40 - 40 - V BVEBO lE=10μA 12 - 12 - V VCE(SAT) lC=1.0A, IB=2.0mA lC=2.0A, IB=4.0mA - 1.5 - 1.5 V - 2.0 - 2.0 V VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE hfe fT Cob lC=1.0A, IB=2.0mA VCE=5.0V, IC=1.0A VCE=5.0V, IC=200mA - 2.0 - 2.0 V - 2.0 - 2.0 V 25K 150K 15K 150K VCE=5.0V, IC=500mA VCE=5.0V, IC=1.0A VCE=5.0V, IC=50mA, f=1.0kHz 15K - 10K - 5K - 3K - 20K - 15K - VCE=5.0V, lC=200mA, f=100MHz VCB=10V, lE=0, f=1.0MHz 100 - 100 - MHz - 7.0 - 7.0 pF R1 (23-January 2012) 2N6548 2N6549 NPN SILICON DARLINGTON TRANSISTOR TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector Tab is common to pin 3 MARKING: FULL PART NUMBER R1 (23-January 2012) w w w. c e n t r a l s e m i . c o m