CZT955 SURFACE MOUNT SILICON HIGH CURRENT PNP TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT955 is a silicon high current PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO ICER IEBO BVCBO BVCER BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE hFE fT Cob ton toff SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA CHARACTERISTICS: (TA=25°C unless TEST CONDITIONS VCB=150V VCB=150V, TA=100°C VCE=150V, RBE≤1.0kΩ VEB=6.0V IC=100μA IC=1.0μA, RBE≤1.0kΩ IC=10mA IE=100μA IC=100mA, IB=5.0mA IC=0.5A, IB=50mA IC=1.0A, IB=100mA IC=3.0A, IB=300mA IC=3.0A, IB=300mA VCE=5.0V, IC=3.0A VCE=5.0V, IC=10mA VCE=5.0V, IC=1.0A VCE=5.0V, IC=3.0A VCE=5.0V, IC=10A VCE=10V, IC=100mA, f=50MHz VCB=10V, IE=0, f=1.0MHz VCC=50V, IC=1.0A, IB1=IB2=0.1A VCC=50V, IC=1.0A, IB1=IB2=0.1A 180 140 7.0 4.0 10 3.0 -65 to +150 41.7 otherwise noted) MIN TYP 180 180 140 7.0 100 100 35 Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum) 200 200 160 8.0 40 55 85 210 0.96 830 250 220 5.0 200 33 25 410 MAX 20 0.5 20 10 60 80 120 360 1.04 930 UNITS V V V A A W °C °C/W UNITS nA μA nA nA V V V V mV mV mV mV V mV 300 MHz pF ns ns R2 (11-June 2013) CZT955 SURFACE MOUNT SILICON HIGH CURRENT PNP TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE 4 1 2 3 LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R2 (11-June 2013) w w w. c e n t r a l s e m i . c o m CZT955 SURFACE MOUNT SILICON HIGH CURRENT PNP TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS R2 (11-June 2013) w w w. c e n t r a l s e m i . c o m