RENESAS HAT2172H

HAT2172H
Silicon N Channel Power MOS FET
Power Switching
REJ03G0132-0400Z
Rev.4.00
Oct.29.2003
Features
•
•
•
•
•
High speed switching
Capable of 7 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 5.8 mΩ typ. (at VGS = 10 V)
Outline
LFPAK
5
5
D
4
G
4
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
Rev.4.00, Oct.29.2003, page 1 of 9
3
1 2
HAT2172H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
40
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
30
A
Drain peak current
ID(pulse)Note1
120
A
Body-drain diode reverse drain current
IDR
30
A
20
A
Avalanche current
IAP
Note 2
Avalanche energy
EAR
Note 2
Channel dissipation
Pch
Note3
Channel to Case Thermal Resistance
θch-C
6.25
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°°C
Rev.4.00, Oct.29.2003, page 2 of 9
32
mJ
20
W
HAT2172H
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ± 20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
± 10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 40 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
3.0
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
5.8
7.5
mΩ
ID = 15 A, VGS = 10 V Note4
resistance
RDS(on)
—
6.6
9.2
mΩ
ID = 15 A, VGS = 7 V Note4
Forward transfer admittance
|yfs|
27
45
—
S
ID = 15 A, VDS = 10 V Note4
Input capacitance
Ciss
—
2420
—
pF
VDS = 10 V
Output capacitance
Coss
—
480
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
150
—
pF
f = 1 MHz
Gate Resistance
Rg
—
0.5
—
Ω
Total gate charge
Qg
—
32
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
9
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
4.0
—
nc
ID = 30 A
Turn-on delay time
td(on)
—
12
—
ns
VGS = 10 V, ID = 15 A
Rise time
tr
—
20
—
ns
VDD ≅ 10 V
Turn-off delay time
td(off)
—
38
—
ns
RL = 0.67 Ω
Fall time
tf
—
4.5
—
ns
Rg = 4.7 Ω
Body–drain diode forward voltage VDF
—
0.84
1.10
V
IF = 30 A, VGS = 0 Note4
Body–drain diode reverse
recovery time
—
32
—
ns
IF = 30 A, VGS = 0
diF/ dt = 100 A/ µs
trr
Notes: 4. Pulse test
Rev.4.00, Oct.29.2003, page 3 of 9
40
HAT2172H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
ID (A)
30
100
10
Drain Current
Channel Dissipation
Pch (W)
40
20
10
1
50
100
150
Case Temperature
200
Tc (°C)
Operation in
this area is
0.1 limited by RDS(on)
µs
C
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50
Typical Transfer Characteristics
50
Pulse Test
10 V
VDS = 10 V
Pulse Test
4.0 V
4.4 V
40
3.8 V
30
3.6 V
20
3.4 V
10
ID (A)
40
Drain Current
ID (A)
10
1m 0µ
PW
s
s
=1
DC
0m
Op
s
era
tio
nT
c=
25
°
Ta = 25°C
1 shot Pulse
0
Drain Current
10
30
20
10
VGS = 3.0 V
0
2
4
6
Drain to Source Voltage
Rev.4.00, Oct.29.2003, page 4 of 9
8
10
VDS (V)
Tc = 75°C
25°C
–25°C
0
2
4
6
Gate to Source Voltage
10
8
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
200
Pulse Test
150
ID = 20 A
100
10 A
50
5A
Drain to Source On State Resistance
RDS(on) (mΩ)
0
4
8
12
Gate to Source Voltage
15
5 A, 10 A
10
VGS = 7 V
5
10 V
0
–25
5 A, 10 A, 20 A
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.4.00, Oct.29.2003, page 5 of 9
50
20
10
VGS = 7 V
5
10 V
2
Pulse Test
1
1
16
20
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
ID = 20 A
Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.3
10
100 30
3
Drain Current ID (A)
1000
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Voltage
VDS(on) (mV)
HAT2172H
100
30
Tc = –25°C
75°C
10
25°C
3
1
0.3
0.1
0.1
VDS = 10 V
Pulse Test
0.3
1
3
10
30
Drain Current ID (A)
100
HAT2172H
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
50
20
1000
Coss
300
Crss
100
di/dt = 100 A/µs
VGS = 0, Ta = 25°C
10
0.1
30 VGS = 0
f = 1 MHz
10
0
5
10
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
8
20
10
0
12
VDD = 25 V
10 V
5V
8
16
24
32
Gate Charge Qg (nc)
Rev.4.00, Oct.29.2003, page 6 of 9
4
0
40
Switching Time t (ns)
VGS
VGS (V)
16
VDD = 25 V
10 V
5V
25
30
1000
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
ID = 30 A
VDS
20
Switching Characteristics
20
40
30
15
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
50
Ciss
3000
300
tr
100
td(off)
30
td(on)
10
tf
3
1
0.1
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty < 1 %
0.3
1
3
10
30
Drain Current ID (A)
100
HAT2172H
Repetitive Avalanche Energy EAR (mJ)
50
Reverse Drain Current IDR (A)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
10 V
40
5V
VGS = 0, –5 V
30
20
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
50
IAP = 20 A
VDD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
40
30
20
10
0
25
VSD (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit
V DS
Monitor
Avalanche Waveform
EAR =
L
1
2
I AP
Monitor
L • IAP2 •
VDSS
VDSS - V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
Rev.4.00, Oct.29.2003, page 7 of 9
VDD
HAT2172H
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γs (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch - c(t) = γs (t) • θch - c
θch - c = 6.25°C/ W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
0.0
D=
e
uls
PW
p
ot
T
h
0.01
10 µ
1s
PW
T
100 µ
1m
100 m
10 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 10 V
Vout
10%
10%
90%
td(on)
Rev.4.00, Oct.29.2003, page 8 of 9
tr
10%
90%
td(off)
tf
HAT2172H
Package Dimensions
As of January, 2003
Unit: mm
4.9
5.3 Max
4.0 ± 0.2
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
0˚ – 8˚
+0.25
+0.05
*0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
0.75 Max
0.10
1.27
*0.40 ± 0.06
*Ni/Pd/Au plating
Rev.4.00, Oct.29.2003, page 9 of 9
0.25 M
Package Code
JEDEC
JEITA
Mass (reference value)
LFPAK
—
—
0.080 g
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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