H5N2801P Silicon N Channel MOS FET High Speed Power Switching REJ03G0118-0100Z Rev.1.00 Oct.01.2003 Features • Low on-resistance • Low drive current • High speed switching Outline TO-3P D G 1 S Rev.1.00, Oct.01.2003, page 1 of 9 2 3 1. Gate 2. Drain (Flange) 3. Source H5N2801P Absolute Maximum Rating (Ta = 25°C) Item Symbol Rating Unit Drain to source voltage VDSS 280 V Gate to source voltage VGSS ±30 V Drain current ID 60 A Drain peak current ID (pulse)Note1 240 A Body-drain diode reverse drain current IDR 60 A Avalanche current IAPNote3 35 A Avalanche energy Note3 EAR 74.5 mJ 150 W Channel to case thermal impedance θch-c 0.833 °C /W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Channel dissipation Pch Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.1.00, Oct.01.2003, page 2 of 9 Note2 H5N2801P Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition Drain to Source breakdown voltage V(BR)DSS 280 — — V ID = 10 mA, VGS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 280 V, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0 Gate to source cutoff voltage VGS(off) 3.0 — 4.5 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 27 45 — S ID = 30 A, VDS = 10 VNote4 Static drain to source on state resistance RDS(on) — 0.034 0.043 Ω ID = 30 A, VGS = 10 VNote4 Input capacitance Ciss — 5400 — pF Output capacitance Coss — 770 — pF VDS = 25 V VGS = 0 f = 1 MHz Reverse transfer capacitance Crss — 100 — pF Turn-on delay time td(on) — 70 — ns Rise time tr — 300 — ns Turn-off delay time td(off) — 250 — ns Fall time tf — 210 — ns Total gate charge Qg — 148 — nC ID = 30 A RL = 4.7 Ω VGS = 10 V Rg = 10 Ω VDD = 220 V VGS = 10 V ID = 60 A Gate to source charge Qgs — 30 — nC Gate to drain charge Qgd — 73 — nC Body-drain diode forward voltage VDF — 1.10 1.65 V IF = 60 A, VGS = 0Note4 Body-drain diode reverse recovery trr time — 270 — ns IF = 60 A, VGS = 0 diF/dt = 100 A/µs Body-drain diode reverse recovery Qrr charge — 2.8 — µC Notes: 4. Pulse test Rev.1.00, Oct.01.2003, page 3 of 9 H5N2801P Main Characteristics Power vs. Temperature Derating ID (A) 300 150 Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 1000 200 100 50 100 PW DC 30 er 10 = 10 m s( 1s at ion 3 Operation in ho t) (T 25 1 this area is °C ) limited by RDS(on) 0.3 0 50 100 150 Case Temperature Ta = 25°C 200 1 Tc (°C) 10 V 8V 7V 200 6.5 V Pulse Test 6V 40 5.5 V 20 Drain Current ID (A) 80 60 4 8 12 Drain to Source Voltage Rev.1.00, Oct.01.2003, page 4 of 9 16 20 VDS (V) VDS = 10 V Pulse Test 160 120 80 40 VGS = 5 V 0 30 3 10 100 300 1000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Typical Output Characteristics 100 ID (A) µ 0µ s 1m s s c= 0.1 Drain Current Op 10 10 Tc = 75°C 25°C –25°C 0 2 4 6 Gate to Source Voltage 8 10 VGS (V) H5N2801P Pulse Test 4 3 2 30 A 1 10 A 12 4 8 Gate to Source Voltage 16 20 VGS (V) Static Drain to Source on State Resistance vs. Temperature 0.1 Pulse Test 0.08 0.02 0.01 0 Static Drain to Source on State Resistance RDS(on) (Ω) Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test VGS = 10 V,15 V 0.1 0.05 I D = 60 A VGS = 10 V ID = 60 A 30 A 0.06 10 A 0.04 0.02 0 –40 0 40 80 120 Case Temperature Tc (°C) Rev.1.00, Oct.01.2003, page 5 of 9 160 1 2 5 10 20 50 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source Saturation Voltage VDS(on) (V) 5 Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 100 50 Tc = –25°C 20 10 25°C 5 75°C 2 1 VDS = 10 V Pulse Test 0.5 0.2 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 H5N2801P Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 500 20000 Capacitance C (pF) 50000 Reverse Recovery Time trr (ns) 1000 200 100 50 20 10 0.1 VGS = 0 f = 1 MHz 10000 di / dt = 100 A / µs VGS = 0, Ta = 25°C Ciss 5000 2000 1000 Coss 500 200 100 Crss 50 0 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 20 40 60 Drain to Source Voltage 400 VDS = 50 V 100 V 220 V 300 VGS 16 12 VDD 200 100 0 8 VDS = 220 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nC) Rev.1.00, Oct.01.2003, page 6 of 9 4 0 200 Switching Characteristics 10000 Switching Time t (ns) ID = 60 A Gate to Source Voltage VDS (V) Drain to Source Voltage 20 VGS (V) Dynamic Input Characteristics 500 80 100 VDS (V) VGS = 10 V, VDD = 140 V PW = 5 µs, duty < 1 % RG =10 Ω tf 1000 tr td(off) tf 100 td(on) tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 H5N2801P Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Source to Drain Voltage 5 Gate to Source Cutoff Voltage V GS(off) (V) Reverse Drain Current IDR (A) 100 80 60 VGS = 0 V 40 20 10 V 5V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VDS = 10 V ID = 10mA 4 3 1mA 0.1mA 2 1 0 -50 0 50 100 Case Temperature VSD (V) Switching Time Test Circuit 150 Waveform Vout Monitor Vin Monitor 200 Tc (°C) 90% D.U.T. RL Vin 10Ω Vin 10 V V DD = 140 V Vout 10% 10% 90% td(on) Rev.1.00, Oct.01.2003, page 7 of 9 tr 10% 90% td(off) tf H5N2801P Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c(t) = γs (t) • θch – c θch – c = 0.833°C/W, Tc = 25°C 0.1 0.05 PDM 0.03 0.02 1 0.0 0.01 10 µ lse t ho T 1s Rev.1.00, Oct.01.2003, page 8 of 9 PW T PW pu 100 µ D= 1m 100 m 10 m Pulse Width PW (s) 1 10 H5N2801P Package Dimensions 15.6 ± 0.3 Unit: mm 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 As of January, 2003 4.8 ± 0.2 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Package Code JEDEC JEITA Mass (reference value) Rev.1.00, Oct.01.2003, page 9 of 9 TO-3P — Conforms 5.0 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. 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