2SK1307 Silicon N Channel MOS FET REJ03G0926-0200 (Previous: ADE-208-1265) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 3 1. Gate 2. Drain 3. Source S 2SK1307 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Ratings 100 Unit V VGSS ID ±20 20 V A 80 20 A A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current ID(pulse) IDR *1 *2 Channel dissipation Channel temperature Pch Tch 35 150 Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Tstg –55 to +150 W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min 100 Typ — Max — Unit V Gate to source breakdown voltage Gate to source leak current V(BR)GSS IGSS ±20 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS(off) — 1.0 — — 250 2.0 µA V VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — — 0.065 0.085 0.085 0.12 Ω Ω ID = 10 A, VGS = 10 V * 3 ID = 10 A, VGS = 4 V * Forward transfer admittance Input capacitance |yfs| Ciss 10 — 16 1300 — — S pF Output capacitance Reverse transfer capacitance Coss Crss — — 540 160 — — pF pF ID = 10 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time Rise time td(on) tr — — 12 100 — — ns ns Turn-off delay time Fall time td(off) tf — — 300 150 — — ns ns Body to drain diode forward voltage Body to drain diode reverse recovery time VDF trr — — 1.3 300 — — V ns Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 Test conditions ID = 10 mA, VGS = 0 3 3 ID = 10 A, VGS = 10 V, RL = 3 Ω IF = 20 A, VGS = 0 IF = 20 A, VGS = 0, diF/dt = 50 A/µs 2SK1307 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1.0 Operation in this Area is Limited by RDS (on) Ta = 25°C 50 100 150 3 30 10 100 300 1,000 Typical Output Characteristics Typical Transfer Characteristics 20 Pulse Test 7V 5V VDS = 10 V Pulse Test 30 Drain Current ID (A) 4V 40 3.5 V 20 3V 10 VGS = 2.5 V 4 8 12 16 20 16 12 8 75°C TC = 25°C –25°C 4 0 1 2 3 4 5 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Pulse Test 1.6 ID = 20 A 1.2 0.8 10 A 5A 0.4 2 4 6 8 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 10 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Voltage VDS (V) 2.0 0 1 Drain to Source Voltage VDS (V) 10 V 0 0.1 Case Temperature TC (°C) 50 Drain Current ID (A) µs 10 O 3 0.3 0 Drain to Source Saturation Voltage VDS (on) (V) 10 µs ) ) ot °C Sh 25 = (1 s s m m (T C 1 n t io ra pe 10 C 20 0 = 40 10 30 PW Drain Current ID (A) 100 D Channel Dissipation Pch (W) 60 0.5 Pulse Test 0.2 VGS = 4 V 0.1 10 V 0.05 0.02 0.01 0.005 2 5 10 20 50 100 Drain Current ID (A) 200 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 0.20 0.16 Pulse Test ID = 20 A 10 A 0.12 5A VGS = 4 V 20 A 5 A, 10 A 0.08 VGS = 10 V 0.04 0 –40 0 40 80 120 160 10 5 2 VDS = 10 V Pulse Test 1 0.5 0.2 0.5 1.0 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Capacitance C (pF) 200 100 50 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 20 Ciss 1000 Coss Crss 100 10 1.0 5 2 10 20 0 50 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 80 20 10000 500 10 0.5 10 5 2 Body to Drain Diode Reverse Recovery Time 20 VDS VDD = 25 V 50 V 80 V 16 60 12 VGS 40 8 VDD = 80 V 50 V ID = 20 A 25 V 20 0 20 40 60 80 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 4 0 100 1000 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) –25°C TC = 25°C 75°C 20 Drain Current ID (A) 1000 Drain to Source Voltage VDS (V) 50 Case Temperature TC (°C) Switching Time t (ns) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK1307 td(off) 500 200 tf 100 tr 50 • VGS = 10 V, VDD = 30 V PW = 2 µs, duty < 1 % • 20 td(on) 10 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 2SK1307 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 Pulse Test 16 12 10 V 5V 8 4 VGS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance γS (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.2 θch–c (t) = γS (t) • θch–c θch–c = 3.57°C/W, TC = 25°C 0.1 0.1 0.05 PDM 0.03 0.02 0.01 ulse P hot 1S 0.01 10 µ PW D = PW T T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor Vin D.U.T 10 % RL Vout 50 Ω Vin = 10 V Rev.2.00 Sep 07, 2005 page 5 of 6 . VDD =. 30 V td(on) 10 % 90 % tr 10 % 90 % td(off) tf 2SK1307 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-67 PRSS0003AD-A TO-220FM / TO-220FMV 1.8g Unit: mm 10.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 2.5 ± 0.2 4.45 ± 0.3 14.0 ± 1.0 5.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 2.0 ± 0.3 12.0 ± 0.3 17.0 ± 0.3 0.6 7.0 ± 0.3 2.5 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SK1307-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. 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