2SK3418 Silicon N Channel MOS FET High Speed Power Switching REJ03G0407-0200 (Previous ADE-208-941 (Z)) Rev.2.00 Sep.10.2004 Features • Low on-resistance RDS(on) = 4.3 mΩ typ. • Capable of 4 V gate drive • High speed switching Outline TO-220AB D 1. Gate 2. Drain (Flange) 3. Source G S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.2.00 Sep. 10, 2004 page 1 of 7 Symbol VDSS VGSS ID ID (pulse)Note1 Ratings 60 ±20 85 340 Unit V V A A IDR 85 60 308 110 150 – 55 to +150 A A mJ W °C °C Note3 IAP EARNote3 PchNote2 Tch Tstg 2SK3418 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 1. Pulse test Rev.2.00 Sep. 10, 2004 page 2 of 7 Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Min 60 — — 1.0 55 — — — — — — — — — — — — Typ — — — — 90 4.3 6.0 9770 1340 470 180 32 36 53 320 700 380 Max — 10 ±0.1 2.5 — 5.5 9.0 — — — — — — — — — — Unit V µA µA V S mΩ mΩ pF pF pF nC nC nC ns ns ns ns VDF — 1.0 — V trr — 70 — ns Test conditions ID = 10 mA, VGS = 0 VDS = 60 V, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 10 V, ID = 1 mANote1 ID = 45 A, VDS = 10 VNote1 ID = 45 A, VGS= 10 VNote1 ID = 45 A, VGS=4 VNote1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 85 A VGS = 10 V ID= 45 A RL = 0.67 Ω IF = 85 A, VGS = 0 IF = 85 A, VGS = 0 diF / dt = 50 A / µs 2SK3418 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 ID (A) 120 80 40 100 30 10 3 1 50 100 150 Case Temperature 0µ = 1 DC 10m ms s Op s ( e 1 (T rati sho c = on t) 25 °C ) Operation in this area is limited by RDS(on) 0.1 Ta = 25°C 0.1 0.3 1 200 30 10 100 VDS (V) Typical Transfer Characteristics 100 VGS = 10 V Pulse Test 5V ID (A) 80 3 Drain to Source Voltage Tc (°C) Typical Output Characteristics 100 ID (A) µs 10 PW 0.3 0 4V Drain Current 60 Drain Current 10 300 Drain Current Channel Dissipation Pch (W) 160 40 3V 20 80 V DS = 10 V Pulse Test 60 40 25°C 20 75°C Tc = – 25°C 2.5 V 0 2 4 6 Drain to Source Voltage 8 0 10 0.4 0.3 I D = 50 A 0.2 20 A 10 A 0 4 8 12 Gate to Source Voltage Rev.2.00 Sep. 10, 2004 page 3 of 7 16 VGS (V) 3 4 20 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) Pulse Test 0.1 2 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 1 100 Pulse Test 30 VGS = 4 V 10 3 10 V 1 0.3 0.1 1 3 10 30 Drain Current 100 ID (A) 300 1000 2SK3418 Forward Transfer Admittance |yfs| (S) Drain to Source On State Resistance RDS(on) (mΩ) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 12 I D = 50 A 10, 20 A 8 4V 4 10, 20, 50 A VGS = 10 V 0 –50 0 50 100 Case Temperature 150 Tc 200 Forward Transfer Admittance vs. Drain Current 500 V DS = 10 V 200 Pulse Test 100 50 Tc = – 25°C 20 10 25°C 5 75°C 2 1 0.5 0.1 (°C) 10 30 100 ID (A) 30000 VGS = 0 f = 1 MHz di / dt = 50 A / µs V GS = 0, Ta = 25°C 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 3 Typical Capacitance vs. Drain to Source Voltage 1000 200 100 50 20 10 0.1 0.3 1 3 10 Reverse Drain Current 30 10000 Ciss 3000 Coss 1000 300 IDR (A) VDS = 50 V 25 V 10 V V DS 20 0 80 160 240 Gate Charge Rev.2.00 Sep. 10, 2004 page 4 of 7 12 8 4 VDS = 50 V 25 V 10 V 320 Qg (nc) 30 40 50 0 400 1000 Switching Time t (ns) V GS 60 40 16 VGS (V) 80 20 Switching Characteristics 20 I D = 85 A 10 Drain to Source Voltage VDS (V) Gate to Source Voltage 100 Crss 100 0 100 Dynamic Input Characteristics VDS (V) 1 Drain Current Body-Drain Diode Reverse Recovery Time Drain to Source Voltage 0.3 t d(off) 500 tf 200 100 tr 50 t d(on) 20 10 0.1 0.2 0.5 1 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 2 Drain Current 5 10 20 ID (A) 50 100 2SK3418 Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage 100 10 V 80 5V 60 VGS = 0, – 5 V 40 20 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 Maximum Avalanche Energy vs. Channel Temperature Derating 400 I AP = 60 A V DD = 15 V duty < 0.1 % Rg > 50 Ω 320 240 160 80 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c(t) = γs (t) • θch – c θch – c = 1.14°C/W, Tc = 25°C 0.1 0.05 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 µ P DM D= PW T PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit V DS Monitor Avalanche Waveform L EAR = 1 •L•I 2 2 AP • VDSS VDSS – V DD I AP Monitor Rg D. U. T V (BR)DSS VDD I AP V DS Vin 15 V 50Ω ID 0 Rev.2.00 Sep. 10, 2004 page 5 of 7 VDD 2SK3418 Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 10 V 50 Ω VDD = 30 V 10% 90% td(on) Rev.2.00 Sep. 10, 2004 page 6 of 7 10% tr 90% td(off) tf 2SK3418 Package Dimensions As of January, 2003 Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 φ 3.6 –0.08 +0.1 1.26 ± 0.15 15.0 ± 0.3 18.5 ± 0.5 1.27 6.4 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 Max 0.76 ± 0.1 2.54 ± 0.5 14.0 ± 0.5 2.7 Max 0.5 ± 0.1 2.54 ± 0.5 Package Code JEDEC JEITA Mass (reference value) TO-220AB Conforms Conforms 1.8 g Ordering Information Part Name 2SK3418-E Quantity 50 pcs Shipping Container sack Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep. 10, 2004 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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