2SK2202 Silicon N Channel MOS FET REJ03G1002-0300 (Previous: ADE-208-139) Rev.3.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1 Rev.3.00 Sep 20, 2005 page 1 of 6 2 3 1. Gate 2. Drain 3. Source S 2SK2202 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings 120 ±20 7 14 7 20 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 120 ±20 Typ — — Max — — Unit V V Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage IGSS IDSS VGS(off) Static drain to source on state resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF — — 1.0 — — 3.0 — — — — — — — — — — — — 0.3 0.35 5.0 420 140 35 9 50 140 65 1.35 320 ±10 250 2.0 0.4 0.55 — — — — — — — — — — µA µA V Ω Ω S pF pF pF ns ns ns ns V ns Body to drain diode reverse recovery time Note: 3. Pulse Test Rev.3.00 Sep 20, 2005 page 2 of 6 trr Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V*3 ID = 4 A, VGS = 4 V*3 ID = 4 A, VDS = 10 V*3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 4 A, VGS = 10 V, RL = 7.5 Ω IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 50 A / µs 2SK2202 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 20 30 20 10 DC 5 1 = O ra m s tio 2 n (1 (T Operation in c = this area is 25 limited by RDS(on) ° 1 m s 10 sh ot ) C) 0.5 0.2 0 50 100 150 200 Ta = 25°C 2 50 100 200 Typical Transfer Characteristics 10 Pulse Test 6V Drain Current ID (A) 4V 6 4 3V 2 VGS = 2.5 V 2 4 6 8 8 VDS = 10 V Pulse Test 6 4 Tc = –25°C 25°C 75°C 2 0 10 1 2 3 4 5 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Pulse Test ID = 5 A 1.6 1.2 0.8 2A 0.4 1A 4 8 12 16 Gate to Source Voltage VGS (V) Rev.3.00 Sep 20, 2005 page 3 of 6 20 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Voltage VDS (V) 2.0 0 20 Typical Output Characteristics 3.5 V 0 10 Drain to Source Voltage VDS (V) 10 V 8 5 Case Temperature TC (°C) 10 Drain Current ID (A) PW pe 0.1 Drain to Source Saturation Voltage VDS (on) (V) 10 µs 10 0 µs 10 Drain Current ID (A) Channel Dissipation Pch (W) 40 5 2 Pulse Test 1 0.5 VGS = 4 V 10 V 0.2 0.1 0.1 0.2 0.5 1 2 5 Drain Current ID (A) 10 20 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 1.0 Pulse Test 0.8 ID = 5 A 2A 1A 0.6 0.4 VGS = 4 V 0.2 10 V 0 –40 0 5A 1, 2 A 40 80 120 160 10 1 0.5 0.2 0.1 0.1 0.5 1 2 5 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 1000 Capacitance C (pF) 500 200 100 50 di / dt = 50 A / µs, VGS = 0 Ta = 25°C, Pulse Test 20 10 VGS = 0 f = 1 MHz 500 Ciss 200 Coss 100 50 Crss 20 10 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 200 500 160 16 ID = 7 A 12 VDS VDD = 100 V 50 V 25 V 80 VDD = 100 V 50 V 25 V 40 8 16 24 4 32 Gate Charge Qg (nc) Rev.3.00 Sep 20, 2005 page 4 of 6 8 0 40 Switching Time t (ns) 20 VGS 0 0.2 Drain Current ID (A) 2000 120 Tc = 75°C 25°C –25°C 2 1000 10 0.1 VDS = 10 V Pulse Test 5 Case Temperature TC (°C) Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Reverse Recovery Time trr (ns) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK2202 200 td(off) 100 tf 50 20 10 VGS = 10 V VDD = 30 V PW = 2 µs duty < 1 % tr td(on) 5 3 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 10 2SK2202 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 Pulse Test 8 6 4 5V 10 V VGS = 0, –5 V 2 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γS (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25°C/W, Tc = 25°C 0.1 0.05 0.03 0.01 10 µ PDM 0.02 e 1 uls 0.0 tp o h 1s D= PW T PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveforms 90% Vout Monitor Vin Monitor D.U.T. RL Vin Vout Vin 10 V 50 Ω VDD = 30 V 10% 10% 90% td(on) Rev.3.00 Sep 20, 2005 page 5 of 6 10% tr 90% td(off) tf 2SK2202 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-67 PRSS0003AD-A TO-220FM / TO-220FMV 1.8g Unit: mm 10.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 2.5 ± 0.2 4.45 ± 0.3 14.0 ± 1.0 5.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 2.0 ± 0.3 12.0 ± 0.3 17.0 ± 0.3 0.6 7.0 ± 0.3 2.5 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SK2202-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Sep 20, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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