2SK3447 Silicon N Channel Power MOS FET Power Switching REJ03G1101-0700 (Previous: ADE-208-1567E) Rev.7.00 Sep 07, 2005 Features • Capable of 4 V gate drive • Low drive current • Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 10 V) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) D 1. Source 2. Drain 3. Gate G 32 Rev.7.00 Sep 07, 2005 page 1 of 6 1 S 2SK3447 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID Value 150 ±20 1 4 1 0.9 150 –55 to +150 ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Unit V V A A A W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Rev.7.00 Sep 07, 2005 page 2 of 6 Symbol V (BR) DSS V (BR) GSS Min 150 ±20 Typ — — Max — — Unit V V IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr — — 1.0 — — 0.5 — — — — — — — — — — — — — — — 1.5 1.9 0.9 85 36 18 4.5 0.8 1.6 7 6 21 10 1.0 60 ±10 1 2.5 1.95 2.5 — — — — — — — — — — — 1.5 — µA µA V Ω Ω S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 150 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 0.5 A, VGS = 10 V Note 3 ID = 0.5 A, VGS = 4 V Note 3 ID = 0.5 A, VDS = 10 V Note 3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 100 V VGS = 10 V ID = 1 A VGS = 10 V ID = 0.5 A RL = 60 Ω IF = 1 A, VGS = 0 Note 3 IF = 1 A, VGS = 0 diF/dt = 100 A/µs 2SK3447 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 10 Pch (W) 1.6 10 ID (A) 3 Drain Current Channel Dissipation 1.2 0.8 0.4 PW 1 DC 0.3 50 100 O pe ra tio 0.1 n = Operation in this area is limited by RDS(on) 0.01 1 ms m s( 1s ho t) (T c 0.03 Ta = 25°C 0.001 0.1 0.3 1 200 150 Ambient Temperature Ta (°C) 25 °C ) 2.5 8V 4 3.5 V 1.5 Drain Current 3V 0.5 VGS = 2.5 V Tc = –25°C 25°C 0 2 4 6 Drain to Source Voltage 8 1 0 10 Pulse Test 2 ID = 1 A 2 4 6 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (Ω) 3 0 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 75°C 2 Pulse Test 0 500 VDS (V) 3 1.0 Drain to Source Saturation Voltage VDS(on) (V) 100 VDS = 10 V Pulse Test ID (A) 5V 4.5 V 30 5 10 V 2.0 10 Typical Transfer Characteristics 4V 6V 3 Drain to Source Voltage Typical Output Characteristics ID (A) 10 100 µs 0.003 0 0 Drain Current = µs 10 Pulse Test 5 VGS =10 V 2 4V 1 0.5 1 0.5 A 0.2 0.2 A 0 0 5 10 Gate to Source Voltage Rev.7.00 Sep 07, 2005 page 3 of 6 15 20 VGS (V) 0.1 0.1 0.3 1 Drain Current 3 ID (A) 10 2SK3447 Forward Transfer Admittance vs. Drain Current 5 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) Static Drain to Source on State Resistance vs. Temperature Pulse Test 4 0.2 A 0.5 A 3 ID = 1 A 2 VGS = 4 V 0.2 A 0.5 A 1 ID = 1 A 10 V 0 –25 0 25 50 75 100 125 150 Case Temperature 10 3 Tc = –25°C 1 25°C 75°C 0.3 VDS = 10 V Pulse Test 0.1 0.1 Drain Current Tc (°C) Body-Drain Diode Reverse Recovery Time 300 10 3 VGS = 0 f = 1 MHz Ciss 100 30 Coss 10 Crss 3 1 0.3 1 3 Reverse Drain Current 10 0 10 80 8 40 4 VDD = 100 V 50 V 25 V 0 2 4 Gate Charge Rev.7.00 Sep 07, 2005 page 4 of 6 6 8 Qg (nC) 40 50 VDS (V) 10 100 Switching Time t (ns) VDD = 100 V 50 V 25 V VGS (V) 12 VGS VDS Gate to Source Voltage ID = 1 A 120 30 Switching Characteristics 16 160 20 Drain to Source Voltage IDR (A) Dynamic Input Characteristics VDS (V) ID (A) 300 30 1 0.1 Drain to Source Voltage 10 1000 di / dt = 100 A / µs VGS = 0, Ta = 25°C 100 0 0 3 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 1 0.3 td(off) 30 tf 10 td(on) 3 1 0.1 tr VGS = 10 V, VDD = 30 V, Rg = 50 Ω PW = 5 µs, duty ≤ 1 % 0.3 1 Drain Current 3 ID (A) 10 2SK3447 Reverse Drain Current IDR (A) 4 Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current vs. Source to Drain Voltage Pulse Test 3 2 5V VGS = 0, –5 V 1 0 0 1 2 Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature 3 VDS = 10 V Pulse Test ID = 10 mA 2 1 mA 1 0.1 mA 0 –25 VSDF (V) 0 25 50 75 100 125 150 Case Temperature Tc (°C) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 θch – a (t) = γ s (t) • θch – a θch – a = 139°C/W, Ta = 25°C 0.1 0.1 0.05 D= PDM 0.02 PW T 0.01 ulse ot p 1sh 0.01 10 µ 100 µ 1m 10 m 100 m 1 Pulse Width PW (S) Rev.7.00 Sep 07, 2005 page 5 of 6 PW T 10 100 1000 10000 2SK3447 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 ± 0.4 Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name 2SK3447TZ-E Quantity 2500 pcs Shipping Container Hold box, Radial taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.7.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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