RENESAS H7N0602AB

H7N0602AB
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0068-0200Z
Rev.2.00
Oct.30.2003
Features
• Low on-resistance
RDS(on) = 4.1 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive
Outline
TO-220AB
D
G
S
1
2
Rev.2.00, Oct.30.2003, page 1 of 9
3
1. Gate
2. Drain
(Flange)
3. Source
H7N0602AB
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
85
A
Note1
Drain peak current
ID (pulse)
340
A
Body-drain diode reverse drain current
IDR
85
A
65
A
Note3
Avalanche current
IAP
Avalanche energy
EARNote3
362
mJ
Channel dissipation
Pch
Note2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.2.00, Oct.30.2003, page 2 of 9
H7N0602AB
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown Voltage V(BR)GSS ±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
10
µA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
2.5
V
ID = 1 mA, VDS = 10 VNote1
Static drain to source on state
RDS(on)
—
4.1
5.2
mΩ
ID = 45 A, VGS = 10 VNote1
—
6.2
9.0
mΩ
ID = 45 A, VGS = 4.5 VNote1
resistance
60
Forward transfer admittance
|yfs|
70
120
—
S
ID = 45 A, VGS = 10 VNote1
Input capacitance
Ciss
—
9000
—
pF
VDS = 10 V
Output capacitance
Coss
—
1000
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
470
—
pF
f = 1 MHz
Total gate charge
Qg
—
140
—
nC
VDD = 25 V
Gate to source charge
Qgs
—
30
—
nC
VGS = 10 V
Gate to drain charge
Qgd
—
30
—
nC
ID = 85 A
Turn-on delay time
td(on)
—
55
—
ns
VGS = 10 V, ID = 45 A
Rise time
tr
—
290
—
ns
RL = 0.67 Ω
Turn-off delay time
td(off)
—
140
—
ns
Rg = 4.7 Ω
Fall time
tf
—
50
—
ns
Body–drain diode forward voltage VDF
—
0.95
—
V
IF = 85 A, VGS = 0
Body–drain diode reverse
recovery time
—
45
—
ns
IF = 85 A, VGS = 0
diF/dt = 100 A/µs
trr
Notes: 1. Pulse test
Rev.2.00, Oct.30.2003, page 3 of 9
H7N0602AB
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
(A)
300
ID
Drain Current
100
80
100
Case Temperature
150
1 Operation in
(A)
4.5 V
ID
ID
120
10
30
Drain to Source Voltage
VDS
4.0 V
80
3.5 V
40
160
VDS = 10 V
Pulse Test
120
80
40
Tc = 75°C
25°C
–25°C
3V
0
2
4
6
Drain to Source Voltage
Rev.2.00, Oct.30.2003, page 4 of 9
8
VDS
100
(V)
Typical Transfer Characteristics
Drain Current
(A)
160
3
200
Pulse Test
6.0 V
this area is
limited by RDS(on)
0.1 Ta = 25°C
0.1 0.3
1
200
Typical Output Characteristics
VGS = 10 V
PW = 10 ms
(1 shot)
3
Tc (°C)
200
DC Operation
(Tc = 25°C)
10
0.3
50
µs
µs
s
m
30
0
Drain Current
0
100
150
10
10
1
Channel Dissipation
Pch (W)
200
10
(V)
0
1
2
3
Gate to Source Voltage
4
VGS
5
(V)
H7N0602AB
Static Drain to Source on State Resistance
vs. Drain Current
Pulse Test
400
300
ID = 50 A
200
100
20 A
Drain to Source on State Resistance
RDS(on) (mΩ)
10 A
16
20
VGS (V)
12
4
8
Gate to Source Voltage
0
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12
50 A
10, 20 A
8
4.5 V
4
0
–50
VGS = 10 V
0
50
10, 20, 50 A
100
Case Temperature
Rev.2.00, Oct.30.2003, page 5 of 9
150
Tc
(°C)
200
Drain to Source on State Resistance
RDS(on) (mΩ)
500
100
Pulse Test
30
10
VGS = 4.5 V
10 V
3
1
1
3
30
100 300 1000
10
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
VDS(on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1000
VDS = 10 V
Pulse Test
300
Tc = –25°C
100
25°C
30
75°C
10
3
1
1
3
10
30
100
Drain Current ID
300 1000
(A)
H7N0602AB
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
100000
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
300
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
100
30
10
30000
3000
1000
Coss
300
3
1
0.1
Ciss
10000
VGS = 0
f = 1 MHz
100
0
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
10
20
30
40
Drain to Source Voltage VDS
Dynamic Input Characteristics
VDS
VDD = 50 V
25 V
10 V
40
20
0
12
8
VDD = 50 V
25 V
10 V
40
80
120
160
Gate Charge Qg (nc)
Rev.2.00, Oct.30.2003, page 6 of 9
4
0
200
(V)
1000
tf
300
Switching Time t (ns)
60
VGS
16
VGS
20
ID = 85 A
80
50
(V)
Switching Characteristics
Gate to Source Voltage
Drain to Source Voltage
VDS (V)
100
Crss
100
tr
td(off)
td(on)
30 tr
tf
10
VGS = 10 V, VDD = 30 V
3 PW = 5 µs, duty < 1 %
Rg = 4.7 Ω
1
0.1
0.3
3
10
1
Drain Current ID
30
(A)
100
H7N0602AB
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current
IDR
(A)
Repetitive Avalanche Energy EAR (mJ)
200
10 V
160
120
80
5V
VGS = 0, –5 V
40
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VSD
500
IAP = 65 A
VDD = 25 V
duty < 0.1 %
Rg > 50 Ω
400
300
200
100
0
25
(V)
50
75
100
125
Channel Temperature Tch (°C)
Avalanche Test Circuit
V DS
Monitor
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
Rev.2.00, Oct.30.2003, page 7 of 9
150
VDD
H7N0602AB
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γs (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch - c(t) = γs (t) • θch - c
θch - c = 1.25°C/ W, Tc = 25°C
0.1
0.05
0.03
PDM
D=
1
0.0
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Rg
Waveform
90%
D.U.T.
RL
Vin
Vout
Vin
10 V
V DS
= 30V
10%
90%
td(on)
Rev.2.00, Oct.30.2003, page 8 of 9
10%
tr
10%
90%
td(off)
tf
H7N0602AB
Package Dimensions
As of January, 2003
Unit: mm
2.79 ± 0.2
11.5 Max
10.16 ± 0.2
4.44 ± 0.2
9.5
φ 3.6 –0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
18.5 ± 0.5
1.27
6.4
+0.2
–0.1
8.0
7.8 ± 0.5
1.5 Max
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 Max
0.5 ± 0.1
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.2.00, Oct.30.2003, page 9 of 9
TO-220AB
Conforms
Conforms
1.8 g
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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