STMICROELECTRONICS VNN1NV04P-E

VNN1NV04P-E, VNS1NV04P-E
OMNIFET II
fully autoprotected Power MOSFET
Features
Parameter
Symbol
Value
Max on-state resistance (per ch.)
RON
250 mΩ
Current limitation (typ)
ILIMH
1.7 A
VCLAMP
40 V
Drain-source clamp voltage
2
1
2
3
SOT-223
■
Linear current limitation
■
Thermal shutdown
■
Short circuit protection
■
Integrated clamp
■
Low current drawn from input pin
■
Diagnostic feedback through input pin
■
ESD protection
■
Direct access to the gate of the Power
MOSFET (analog driving)
■
Compatible with standard Power MOSFET
SO-8
Description
The VNN1NV04P-E, VNS1NV04P-E are
monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1.
Device summary
Order codes
Package
Tube
October 2009
Tape and reel
SOT-223
VNN1NV04P-E VNN1NV04PTR-E
SO-8
VNS1NV04P-E VNS1NV04PTR-E
Doc ID 15586 Rev 2
1/28
www.st.com
28
Contents
VNN1NV04P-E, VNS1NV04P-E
Contents
1
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3
Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5
6
2/28
4.1
SOT-223 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2
SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.1
SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.2
SO8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.3
SOT-223 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.4
SO8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Doc ID 15586 Rev 2
VNN1NV04P-E, VNS1NV04P-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
SOT-223 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
SO-8 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Doc ID 15586 Rev 2
3/28
List of figures
VNN1NV04P-E, VNS1NV04P-E
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
Figure 38.
Figure 39.
Figure 40.
Figure 41.
Figure 42.
4/28
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance vs input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance vs input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance vs Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-off drain-source voltage slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Switching time resistive load (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Switching time resistive load (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
SOT-223 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
SOT-223 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . 17
SOT-223 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . 18
SOT-223 thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
SO-8 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
SO-8 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . 19
SO-8 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 20
SO-8 thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
SOT-223 mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
SO-8 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
SOT-223 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Doc ID 15586 Rev 2
VNN1NV04P-E, VNS1NV04P-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
DRAIN
2
Overvoltage
Clamp
INPUT
Gate
Control
1
Linear
Current
Limiter
Over
Temperature
3
SOURCE
Figure 2.
Configuration diagram (top view) (a)
SOURCE
1
8
DRAIN
SOURCE
INPUT
DRAIN
DRAIN
SOURCE
4
5
DRAIN
a. For the pins configuration related to SOT-223 see outline at page 1.
Doc ID 15586 Rev 2
5/28
Electrical specifications
2
VNN1NV04P-E, VNS1NV04P-E
Electrical specifications
Figure 3.
Current and voltage conventions
ID
VDS
DRAIN
IIN
RIN
INPUT
SOURCE
VIN
2.1
Absolute maximum ratings
Stress values that exceed those listed in the “Absolute maximum ratings” table can cause
permanent damage to the device. These are stress ratings only, and operation of the device
at these, or any other conditions greater than those, indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics sure
program and other relevant quality documents.
Table 2.
Absolute maximum ratings
Symbol
Value
SOT-223
SO-8
Unit
VDSn
Drain-source voltage (VINn=0 V)
Internally clamped
V
VINn
Input voltage
Internally clamped
V
IINn
Input current
+/-20
mA
330
Ω
Internally limited
A
-3
A
RIN MINn
Minimum input series impedance
IDn
Drain current
IRn
Reverse DC output current
VESD1
Electrostatic discharge (R=1.5 KΩ, C=100 pF)
4000
V
VESD2
Electrostatic discharge on output pins only
(R=330 Ω, C=150 pF)
16500
V
Ptot
Total dissipation at Tc=25 °C
7
8.3
W
Tj
Operating junction temperature
Internally limited
°C
Tc
Case operating temperature
Internally limited
°C
-55 to 150
°C
Tstg
6/28
Parameter
Storage temperature
Doc ID 15586 Rev 2
VNN1NV04P-E, VNS1NV04P-E
2.2
Electrical specifications
Thermal data
Table 3.
Thermal data
Max value
Symbol
Parameter
Unit
SOT-223
Rthj-case
Thermal resistance junction-case
Rthj-lead
Thermal resistance junction-lead
Rthj-amb
SO-8
18
°C/W
15
(1)
Thermal resistance junction-ambient
(1)
70
65
°C/W
°C/W
1. When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 μm thick) connected
to all DRAIN pins
2.3
Electrical characteristics
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
45
55
V
Off (-40 °C<Tj<150 °C, unless otherwise specified)
VCLAMP
Drain-source clamp voltage
VIN=0 V; ID=0.5 A
40
VCLTH
Drain-source clamp threshold
voltage
VIN=0 V; ID=2 mA
36
VINTH
Input threshold voltage
VDS=VIN; ID=1 mA
0.5
Supply current from input pin
VDS=0 V; VIN=5 V
VINCL
Input-source clamp
voltage
IIN=1 mA
IIN=-1 mA
IDSS
Zero input voltage drain current VDS=13 V; VIN=0 V; Tj=25 °C
(VIN=0 V)
VDS=25 V; VIN=0 V
IISS
6
-1.0
V
2.5
V
100
150
µA
6.8
8
-0.3
V
30
75
µA
250
500
mΩ
On (-40 °C<Tj<150 °C, unless otherwise specified)
RDS(on)
Static drain-source on
resistance
VIN=5 V; ID=0.5 A; Tj=25 °C
VIN=5 V; ID=0.5 A
Dynamic (Tj=25 °C, unless otherwise specified)
gfs (1)
Forward transconductance
VDD=13 V; ID=0.5 A
2
S
COSS
Output capacitance
VDS=13 V; f=1 MHz; VIN=0 V
90
pF
Switching (Tj=25 °C, unless otherwise specified)
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
VDD=15 V; ID=0.5 A
Vgen=5 V; Rgen=RIN MIN=330 Ω
(see Figure 4)
Fall time
Doc ID 15586 Rev 2
70
200
ns
170
500
ns
350
1000
ns
200
600
ns
7/28
Electrical specifications
Table 4.
Electrical characteristics (continued)
Symbol
td(on)
tr
td(off)
tf
(dI/dt)on
Qi
VNN1NV04P-E, VNS1NV04P-E
Parameter
Test conditions
Min
Turn-on delay time
Rise time
Turn-off delay time
VDD=15 V; ID=0.5 A
Vgen=5 V; Rgen=2.2 KΩ
(see Figure 4)
Fall time
Typ
Max
Unit
0.25
1.0
µs
1.3
4.0
µs
1.8
5.5
µs
1.2
4.0
µs
Turn-on current slope
VDD=15 V; ID=1.5 A
Vgen=5 V; Rgen=RIN MIN=330 Ω
5
A/µs
Total input charge
VDD=12 V; ID=0.5 A; VIN=5 V
Igen=2.13 mA (see Figure 7)
5
nC
Source drain diode (Tj=25 °C, unless otherwise specified)
VSD(1)
Forward on voltage
ISD=0.5 A; VIN=0 V
0.8
V
trr
Reverse recovery time
205
ns
Qrr
Reverse recovery charge
100
nC
IRRM
Reverse recovery current
ISD=0.5 A; dI/dt=6 A/µs
VDD=30 V; L=200 µH
(see Figure 5)
0.7
A
Protections (-40 °C<Tj<150 °C, unless otherwise specified)
Ilim
Drain current limit
VIN=5 V; VDS=13 V
tdlim
Step response current limit
VIN=5 V; VDS=13 V
Tjsh
Over temperature shutdown
150
Tjrs
Over temperature reset
135
Igf
Fault sink current
Eas
Starting Tj=25 °C; VDD=24 V
VIN=5 V Rgen=RIN MIN=330 Ω;
Single pulse avalanche energy
L=50 mH
(see Figure 6 and Figure 8)
VIN=5 V; VDS=13 V; Tj=Tjsh
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
8/28
Doc ID 15586 Rev 2
1.7
3.5
2.0
10
55
175
A
µs
200
°C
°C
15
20
mA
mJ
VNN1NV04P-E, VNS1NV04P-E
Figure 4.
Electrical specifications
Switching time test circuit for resistive load
VD
Rgen
Vgen
ID
90%
tr
tf
10%
t
Vgen
td(on)
td(off)
t
Doc ID 15586 Rev 2
9/28
Electrical specifications
Figure 5.
VNN1NV04P-E, VNS1NV04P-E
Test circuit for diode recovery times
A
A
D
I
FAST
DIODE
OMNIFET
S
L=100uH
B
B
330Ω
D
Rgen
VDD
I
OMNIFET
Vgen
S
8.5 Ω
Figure 6.
Unclamped inductive load test circuits
RGEN
VIN
PW
10/28
Doc ID 15586 Rev 2
VNN1NV04P-E, VNS1NV04P-E
Figure 7.
Electrical specifications
Input charge test circuit
VIN
GEN
ND8003
Figure 8.
Unclamped inductive waveforms
Doc ID 15586 Rev 2
11/28
Electrical specifications
VNN1NV04P-E, VNS1NV04P-E
2.4
Electrical characteristics curves
Figure 9.
Source-drain diode forward
characteristics
Figure 10. Static drain-source on resistance
Vsd (mV)
Rds(on) (ohms)
1000
4.5
Tj=-40ºC
4
950
Vin=2.5V
3.5
Vin=0V
3
900
2.5
850
2
1.5
800
Tj=25ºC
1
750
Tj=150ºC
0.5
0
700
0
2
4
6
8
10
12
0
14
0.05
0.1
0.15
Figure 11.
0.2
0.25
0.3
Id(A)
Id (A)
Derating curve
Figure 12. Static drain-source on resistance
vs input voltage (part 1/2)
Rds(on) (mohms)
500
450
Id=0.5A
400
Tj=150ºC
350
300
250
200
Tj=25ºC
150
Tj=-40ºC
100
50
0
3
3.5
4
4.5
5
5.5
6
6.5
7
Vin(V)
Figure 13. Static drain-source on resistance
vs input voltage (part 2/2)
Rds(on) (mohms)
Gfs (S)
500
450
Figure 14. Transconductance
6
Tj=150ºC
5.5
Id=1.5A
Id=1A
350
Tj=25ºC
4.5
4
300
Tj=150ºC
3.5
Tj=25ºC
250
3
2.5
200
Id=1.5A
Id=1A
Tj=-40ºC
150
2
1.5
Id=1.5A
Id=1A
100
1
50
0.5
0
0
3
3.5
4
4.5
5
5.5
6
6.5
0
0.25
0.5
0.75
1
Id(A)
Vin(V)
12/28
Tj=-40ºC
Vds=13V
5
400
Doc ID 15586 Rev 2
1.25
1.5
1.75
2
VNN1NV04P-E, VNS1NV04P-E
Electrical specifications
Figure 15. Static drain-source on resistance
vs Id
Figure 16. Transfer characteristics
Rds(on) (mohms)
Idon(A)
500
2.25
Vin=3.5V
450
Tj=25ºC
2
Vds=13.5V
Tj=150ºC
400
1.75
Vin=5V
350
1.5
300
1.25
250
Vin=3.5V
1
Vin=5V
Vin=3.5V
0.75
Tj=25ºC
200
150
Tj=-40ºC
Tj=-40ºC
0.5
Vin=5V
100
Tj=150ºC
0.25
50
0
0
0
0.25
0.5
0.75
1
1.25
1.5
1.75
1.5
2
2
1.75
Id(A)
2.5
2.25
3
3.5
2.75
3.25
4
3.75
4.5
4.25
5
4.75
Vin(V)
Figure 17. Turn-on current slope (part 1/2)
Figure 18. Turn-on current slope (part 2/2)
di/dt(A/us)
di/dt(A/us)
6
1.4
5
1.2
Vin=5V
Vdd=15V
Id=1.5A
4
Vin=3.5V
Vdd=15V
Id=1.5A
1
3
0.8
2
0.6
1
0.4
0
0.2
0
500
1000
1500
2000
2500
0
500
Rg(ohm)
1000
1500
2000
2500
Rg(ohm)
Figure 19. Input voltage vs input charge
Figure 20. Turn-off drain source voltage slope
(part 1/2)
Vin (V)
dv/dt(V/us)
6
350
300
5
Vds=12V
Id=0.5A
Vin=5V
Vdd=15V
Id=0.5A
250
4
200
3
150
2
100
1
50
0
0
1
2
3
4
5
6
0
Qg (nC)
0
500
1000
1500
2000
2500
Rg(ohm)
Doc ID 15586 Rev 2
13/28
Electrical specifications
VNN1NV04P-E, VNS1NV04P-E
Figure 21. Turn-off drain-source voltage slope Figure 22. Capacitance variations
(part 2/2)
C(pF)
dv/dt(V/us)
225
350
200
300
Vin=3.5V
Vdd=15V
Id=0.5A
250
f=1MHz
Vin=0V
175
200
150
150
125
100
100
50
75
50
0
0
500
1000
1500
2000
0
2500
5
10
15
20
25
30
35
Vds(V)
Rg(ohm)
Figure 23. Switching time resistive load
(part 1/2)
Figure 24. Switching time resistive load
(part 2/2)
t(ns)
t(us)
550
2
500
1.75
Vdd=15V
Id=0.5A
Vin=5V
1.5
Vdd=15V
Id=0.5A
Rg=330ohm
tr
450
td(off)
400
tr
1.25
350
td(off)
300
tf
1
250
0.75
tf
200
150
0.5
td(on)
0.25
td(on)
100
50
0
250
0
500
0
750 1000 1250 1500 1750 2000 2250 2500
3.25
3.5
3.75
4
4.25
4.5
4.75
5
5.25
Vin(V)
Rg(ohm)
Figure 25. Output characteristics
Figure 26. Normalized on resistance vs
temperature
ID(A)
Rds(on) (mOhm)
2.25
2.4
2.2
Vin=5.5V
2
Vin=4.5V
2
Vin=5V
Id=0.5A
Vin=3.5V
1.8
1.75
1.6
1.5
1.4
1.2
1.25
1
0.8
1
0.6
0.4
0.75
Vin=3V
0.2
0.5
0
0
1
2
3
4
5
6
7
8
9
10
11
12
14/28
-50
-25
0
25
50
75
Tc (ºC)
VDS(V)
Doc ID 15586 Rev 2
100
125
150
175
VNN1NV04P-E, VNS1NV04P-E
Electrical specifications
Figure 27. Normalized input threshold voltage Figure 28. Normalized current limit vs junction
vs temperature
temperature
Vinth (V)
Ilim (A)
2
5
1.8
4.5
Vds=Vin
Id=1mA
1.6
Vin=5V
Vds=13V
4
1.4
3.5
1.2
3
1
2.5
0.8
2
0.6
1.5
0.4
1
0.2
0.5
0
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (ºC)
Tc (ºC)
Figure 29. Step response current limit
Tdlim(us)
2.4
2.3
Vin=5V
Rg=330ohm
2.2
2.1
2
1.9
5
10
15
20
25
30
35
Vdd(V)
Doc ID 15586 Rev 2
15/28
Protection features
3
VNN1NV04P-E, VNS1NV04P-E
Protection features
During normal operation, the input pin is electrically connected to the gate of the internal
Power MOSFET through a low impedance path.
The device then behaves like a standard Power MOSFET and can be used as a switch from
DC up to 50 kHz. The only difference from the user’s standpoint is that a small DC current
IISS (typ. 100 µA) flows into the input pin in order to supply the internal circuitry.
The device integrates:
●
Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche
characteristics of the Power MOSFET stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly important when driving inductive
loads.
●
Linear current limiter circuit: limits the drain current ID to Ilim whatever the input pin
voltages. When the current limiter is active, the device operates in the linear region, so
power dissipation may exceed the capability of the heatsink. Both case and junction
temperatures increase, and if this phase lasts long enough, junction temperature may
reach the over temperature threshold Tjsh.
●
Over temperature and short circuit protection: these are based on sensing the chip
temperature and are not dependent on the input voltage. The location of the sensing
element on the chip in the power stage area ensures fast, accurate detection of the
junction temperature. Over temperature cutout occurs in the range 150 to 190 °C, a
typical value being 170 °C. The device is automatically restarted when the chip
temperature falls of about 15 °C below shutdown temperature.
●
Status feedback: in the case of an over temperature fault condition (Tj > Tjsh), the
device tries to sink a diagnostic current Igf through the input pin in order to indicate fault
condition. If driven from a low impedance source, this current may be used in order to
warn the control circuit of a device shutdown. If the drive impedance is high enough so
that the input pin driver is not able to supply the current Igf, the input pin will fall to 0 V.
This will not however affect the device operation: no requirement is put on the current
capability of the input pin driver except to be able to supply the normal operation drive
current IISS.
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL logic circuit.
16/28
Doc ID 15586 Rev 2
VNN1NV04P-E, VNS1NV04P-E
Package and PCB thermal data
4
Package and PCB thermal data
4.1
SOT-223 thermal data
Figure 30. SOT-223 PC board
.
Note:
Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm,PCB
thickness = 2 mm, Cu thickness=35 µm, Copper areas: from minimum pad layout to
0.8 cm2).
Figure 31. SOT-223 Rthj-amb vs PCB copper area in open box free air condition
140
footprint
130
120
110
100
90
80
70
60
0
0,5
1
1,5
2
2,5
PCB Cu heat sink area ( cm^ 2) - ( refer t o PCB layout )
Doc ID 15586 Rev 2
17/28
Package and PCB thermal data
VNN1NV04P-E, VNS1NV04P-E
Figure 32. SOT-223 thermal impedance junction ambient single pulse
ZTH ( ° C/ W)
1000
Footprint
100
2 cm2
10
1
0,1
0,0001
0,001
0,01
0,1
1
Time ( s)
10
100
1000
Equation 1: pulse calculation formula
Z
THδ
= R
TH
⋅δ+Z
THtp
(1 – δ)
where δ = tP/T
Figure 33. SOT-223 thermal fitting model of a single channel
Table 5.
18/28
SOT-223 thermal parameter
Area/island (cm2)
FP
R1 (°C/W)
0.8
R2 (°C/W)
1.6
R3 (°C/W)
4.5
R4 (°C/W)
24
R5 (°C/W)
0.1
R6 (°C/W)
100
Doc ID 15586 Rev 2
2
45
VNN1NV04P-E, VNS1NV04P-E
Table 5.
4.2
Package and PCB thermal data
SOT-223 thermal parameter (continued)
Area/island (cm2)
FP
C1 (W·s/°C)
0.00006
C2 (W·s/°C)
0.0005
C3 (W·s/°C)
0.03
C4 (W·s/°C)
0.16
C5 (W·s/°C)
1000
C6 (W·s/°C)
0.5
2
2
SO-8 thermal data
Figure 34. SO-8 PC board
Note:
Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm,PCB
thickness = 2 mm, Cu thickness=35 µm, Copper areas: from minimum pad layout to 2 cm2).
Figure 35. SO-8 Rthj-amb vs PCB copper area in open box free air condition
105
footprint
95
85
75
65
0
0,5
1
1,5
2
2,5
PCB Cu heat sink area ( cm^ 2) - ( refer t o PCB layout )
Doc ID 15586 Rev 2
19/28
Package and PCB thermal data
VNN1NV04P-E, VNS1NV04P-E
Figure 36. SO-8 thermal impedance junction ambient single pulse
ZTH (°C/ W )
1000
Footprint
100
2 cm2
10
1
0,1
0,0001
0,001
0,01
0,1
1
10
100
1000
Time (s)
Equation 2: pulse calculation formula
Z
THδ
= R
TH
⋅δ+Z
THtp
(1 – δ)
where δ = tP/T
Figure 37. SO-8 thermal fitting model of a single channel
Table 6.
20/28
SO-8 thermal parameter
Area/island (cm2)
FP
R1 (°C/W)
0.8
R2 (°C/W)
2.6
R3 (°C/W)
3.5
R4 (°C/W)
21
Doc ID 15586 Rev 2
2
VNN1NV04P-E, VNS1NV04P-E
Table 6.
Package and PCB thermal data
SO-8 thermal parameter (continued)
Area/island (cm2)
FP
R5 (°C/W)
16
R6 (°C/W)
58
C1 (W·s/°C)
0.00006
C2 (W·s/°C)
0.0005
C3 (W·s/°C)
0.0075
C4 (W·s/°C)
0.045
C5 (W·s/°C)
0.35
C6 (W·s/°C)
1.05
Doc ID 15586 Rev 2
2
28
2
21/28
Package and packing information
5
VNN1NV04P-E, VNS1NV04P-E
Package and packing information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
5.1
SOT-223 mechanical data
Figure 38. SOT-223 mechanical data and package outline
22/28
Doc ID 15586 Rev 2
VNN1NV04P-E, VNS1NV04P-E
5.2
Package and packing information
SO8 mechanical data
Table 7.
SO-8 mechanical data
mm
Dim.
Min.
Typ.
A
Max.
1.75
A1
0.10
A2
1.25
b
0.28
0.48
c
0.17
0.23
(1)
4.80
4.90
5.00
E
5.80
6.00
6.20
3.80
3.90
4.00
D
(2)
E1
e
0.25
1.27
h
0.25
0.50
L
0.40
1.27
L1
k
1.04
0°
ccc
8°
0.10
1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs
shall not exceed 0.15 mm in total (both side).
2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not
exceed 0.25 mm per side.
Doc ID 15586 Rev 2
23/28
Package and packing information
VNN1NV04P-E, VNS1NV04P-E
Figure 39. SO-8 package dimension
0016023 D
24/28
Doc ID 15586 Rev 2
VNN1NV04P-E, VNS1NV04P-E
5.3
Package and packing information
SOT-223 packing information
Figure 40. SOT-223 tape and reel shipment (suffix “TR”)
Reel dimensions
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
12.4
60
18.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (+ 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
12
4
8
1.5
1.5
5.5
4.5
2
All dimensions are in mm.
End
Start
Top
cover
tape
No components
Components
No components
500mm min
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
Doc ID 15586 Rev 2
25/28
Package and packing information
5.4
VNN1NV04P-E, VNS1NV04P-E
SO8 packing information
Figure 41. SO-8 tube shipment (no suffix)
B
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
C
A
100
2000
532
3.2
6
0.6
All dimensions are in mm.
Figure 42. SO-8 tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
2500
2500
330
1.5
13
20.2
12.4
60
18.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (+ 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
12
4
8
1.5
1.5
5.5
4.5
2
All dimensions are in mm.
End
Start
Top
cover
tape
No components
Components
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
26/28
Doc ID 15586 Rev 2
No components
500mm min
VNN1NV04P-E, VNS1NV04P-E
6
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
Changes
16-May-2009
1
Initial release.
29-Sep-2009
2
Removed target specification on cover page.
Doc ID 15586 Rev 2
27/28
VNN1NV04P-E, VNS1NV04P-E
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Doc ID 15586 Rev 2