STMICROELECTRONICS VNV49N04

VNB49N04 - VNV49N04
OMNIFET:
fully autoprotected Power MOSFET
Features
Type
VCLAMP
RDS(ON)
ILIM
42 V
20 mΩ
49 A
10
VNB49N04
3
1
1
VNV49N04
TO-263(D2PAK)
■
Linear current limitation
■
Thermal shutdown
■
Short circuit protection
■
Integrated clamp
■
Low current drawn from input pin
■
Diagnostic feedback through input pin
■
ESD protection
■
Direct access to the gate of the Power
MOSFET (analog driving)
■
Compatible with standard Power MOSFET
PowerSO-10
Description
The VNB49N04, VNV49N04 are monolithic devices
designed in STMicroelectronics™ VIPower™ M0
technology, intended for replacement of standard
Power MOSFETs from DC up to 50 KHz
applications.
Built-in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1.
Device summary
Order code
Package
November 2010
Tube
Tape and reel
PowerSO-10
VNV49N04
VNV49N0413TR
TO-263 (D2PAK)
VNB49N04
VNB49N0413TR
Doc ID 1641 Rev 2
1/22
www.st.com
1
Contents
VNB49N04 - VNV49N04
Contents
1
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1
Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.5
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3
Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5
2/22
4.1
ECOPACK® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2
TO-263 (D2PAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.3
PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Doc ID 1641 Rev 2
VNB49N04 - VNV49N04
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
TO-263 (D2PAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Doc ID 1641 Rev 2
3/22
List of figures
VNB49N04 - VNV49N04
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
4/22
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connection diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Thermal impedance for D2PAK / PowerSO-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Static drain-source on resistance vs input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Static drain-source on resistance (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Static drain-source on resistance (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Input charge vs input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Normalized on resistance vs temperature (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Normalized on resistance vs temperature (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Turn-on current slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Turn-on current slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Turn-off drain-source voltage slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Turn-off drain-source voltage slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Switching time resistive load vs RG (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Switching time resistive load vs RG (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Switching time resistive load vs VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Source drain diode forward characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Switching time test circuits for resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Test circuit for inductive load switching and diode recovery times . . . . . . . . . . . . . . . . . . . 15
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
TO-263 (D2PAK) package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
PowerSO-10 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Doc ID 1641 Rev 2
VNB49N04 - VNV49N04
Block diagram
1
Block diagram
Figure 1.
Block diagram
Figure 2.
Connection diagram (top view)
D2PAK
PowerSO-10
Doc ID 1641 Rev 2
5/22
Electrical specifications
VNB49N04 - VNV49N04
2
Electrical specifications
2.1
Absolute maximum rating
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 2.
Absolute maximum rating
Symbol
Value
Unit
Internally clamped
V
VDS
Drain-source voltage (VIN = 0 V)
VIN
Input voltage
18
V
ID
Drain current
Internally limited
A
IR
Reverse DC output current
-50
A
Electrostatic discharge (R = 1.5 KΩ, C = 100 pF)
2000
V
Ptot
Total dissipation at Tc = 25 °C
125
W
Tj
Operating junction temperature
Internally limited
°C
Tc
Case operating temperature
Internally limited
°C
-55 to 150
°C
VESD
Tstg
2.2
Parameter
Storage temperature
Thermal data
Table 3.
Thermal data
Value
Symbol
Parameter
Rthj-case Thermal resistance junction-case (max)
Rthj-amb
6/22
Thermal resistance junction-ambient (max)
Doc ID 1641 Rev 2
Unit
PowerSO-10
D2PAK
1
1
°C/W
50
62.5
°C/W
VNB49N04 - VNV49N04
2.3
Electrical specifications
Electrical characteristics
-40 °C < Tj < 125 °C, unless otherwise specified
Table 4.
Off
Symbol
VCLAMP
Parameter
Test conditions
Min
Typ
Max
Unit
42
50
V
Drain-source clamp voltage
ID = 200 mA; VIN = 0
34
VCLTH
Drain-source clamp threshold
voltage
ID = 2 mA; VIN = 0
33
VINCL
Input-source reverse clamp
voltage
IIN = -1 mA
IDSS
Zero input voltage drain
current (VIN = 0 V)
IISS
Supply current from input pin
VDS = 0 V; VIN = 10 V
Table 5.
Symbol
V
-1.2
-0.1
V
VDS = 13 V; VIN = 0 V
70
µA
VDS = 25 V; VIN = 0 V
220
µA
250
550
µA
Min
Typ
Max
Unit
0.8
—
3
V
On(1)
Parameter
Test conditions
VIN(th)
Input threshold voltage
VDS = VIN; ID + IIN = 1 mA
Static drain-source on
resistance
VIN = 10 V; ID = 25 A
—
0.04
RDS(on)
Ω
VIN = 5 V; ID = 25 A
—
0.05
Ω
Min
Typ
Max
Unit
25
30
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 6.
Symbol
Dynamic
Parameter
Test conditions
gfs(1)
Forward
transconductance
VDS = 13 V; ID = 25 A; Tc = 25 °C
COSS
Output capacitance
VDS = 13 V; f = 1 MHz; VIN = 0 V;
Tc = 25 °C
S
1100
1500
pF
Min
Typ
Max
Unit
—
200
600
ns
—
1300
3600
ns
—
800
2400
ns
—
300
900
ns
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 7.
Symbol
td(on)
tr
td(off)
tf
Switching(1)
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDS = 15 V; ID = 25 A; Vgen = 10 V;
Rgen = 10 Ω; (see Figure 27)
Fall time
Doc ID 1641 Rev 2
7/22
Electrical specifications
Table 7.
Symbol
td(on)
tr
Switching(1) (continued)
Parameter
Test conditions
Turn-on delay time
Rise time
td(off)
VNB49N04 - VNV49N04
Turn-off delay time
VDS = 15 V; ID = 25 A; Vgen = 10 V;
Rgen = 1000 Ω (see Figure 27)
Fall time
tf
(di/dt)on
Qi
Min
Typ
Max
Unit
—
1.3
3.8
µs
—
3.8
10.4
µs
—
12
24
µs
—
6.1
17
µs
Turn-on current slope
VDS = 15 V; ID = 25 A; VIN = 10 V;
Rgen = 10 Ω
—
25
A/µs
Total input charge
VDS = 15 V; ID = 25 A; VIN = 10 V
—
100
nC
Min
Typ
1. Parameters guaranteed by design/characterization
Table 8.
Symbol
VSD(1)
trr(2)
Qrr
(2)
IRRM
(2)
Source drain diode
Parameter
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
ISD = 25A; VIN = 0 V
—
Max
Unit
1.8
V
—
250
ns
—
910
nC
—
7.5
A
Min
Typ
Max
Unit
VIN = 10 V; VDS = 13 V
28
49
70
A
VIN = 5 V; VDS = 13 V
28
49
70
A
VIN = 10 V
35
50
µs
VIN = 5 V
90
150
µs
ISD = 25 A; di/dt = 100 A/µs;
VDS = 30 V; Tj = 25 °C;
(see Figure 29)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Parameters guaranteed by design/characterization.
Table 9.
Symbol
ILIM
Protections
Parameter
Drain current limit
Test conditions
tdlim(1)
Step response current limit
(1)
Overtemperature shutdown
150
°C
(1)
Overtemperature reset
135
°C
Tjsh
Tjrs
Igf(1)
Fault sink current
Eas(1)
Single pulse avalanche
energy
VIN = 10 V; VDS = 13 V
50
mA
VIN = 5 V; VDS = 13 V
20
mA
Starting Tj = 25 °C; VDS = 20 V;
VIN = 10 V; Rgen = 1 KΩ; L = 6 mH
1. Parameters guaranteed by design/characterization.
8/22
Doc ID 1641 Rev 2
4
J
VNB49N04 - VNV49N04
Electrical specifications
2.4
Electrical characteristics curves
Figure 3.
Thermal impedance for D2PAK /
PowerSO-10
Figure 4.
Derating curve
Figure 5.
Output characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
vs input voltage
Figure 8.
Static drain-source on resistance
(part 1)
Doc ID 1641 Rev 2
9/22
Electrical specifications
Figure 9.
VNB49N04 - VNV49N04
Static drain-source on resistance
(part 2)
Figure 10. Input charge vs input voltage
R DS(on) (mOhm)
40
35
30
25
V IN = 5V
20
V IN = 10V
15
10
5
0
5
Figure 11.
10
15
20
25 I D (A)
Capacitance variations
Figure 12. Normalized input threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature (part 1)
10/22
Figure 14. Normalized on resistance vs
temperature (part 2)
Doc ID 1641 Rev 2
VNB49N04 - VNV49N04
Electrical specifications
Figure 15. Turn-on current slope (part 1)
Figure 16. Turn-on current slope (part 2)
Figure 17. Turn-off drain-source voltage slope Figure 18. Turn-off drain-source voltage slope
(part 1)
(part 2)
Figure 19. Switching time resistive load vs RG Figure 20. Switching time resistive load vs RG
(part 1)
(part 2)
Doc ID 1641 Rev 2
11/22
Electrical specifications
VNB49N04 - VNV49N04
Figure 21. Switching time resistive load vs VIN Figure 22. Current limit vs junction
temperature
Figure 23. Step response current limit
12/22
Figure 24. Source drain diode forward
characteristics
Doc ID 1641 Rev 2
VNB49N04 - VNV49N04
2.5
Electrical specifications
Waveforms
Figure 25. Unclamped inductive load test circuits
Figure 26. Unclamped inductive waveforms
Doc ID 1641 Rev 2
13/22
Electrical specifications
VNB49N04 - VNV49N04
Figure 27. Switching time test circuits for resistive load
Figure 28. Input charge test circuit
14/22
Doc ID 1641 Rev 2
VNB49N04 - VNV49N04
Electrical specifications
Figure 29. Test circuit for inductive load switching and diode recovery times
Figure 30. Waveforms
Doc ID 1641 Rev 2
15/22
Protection features
3
VNB49N04 - VNV49N04
Protection features
During normal operation, the INPUT pin is electrically connected to the gate of the internal
power MOSFET. The device then behaves like a standard power MOSFET and can be used
as a switch from DC up to 50 KHz. The only difference
from the user’s standpoint is that a small DC current (IISS) flows into the INPUT pin in order
to supply the internal circuitry.
The device integrates:
●
Overvoltage clamp protection:
Internally set at 42V, along with the rugged avalanche characteristics of the Power
MOSFET stage give this device unrivalled ruggedness and energy handling capability.
This feature is mainly important when driving inductive loads.
●
Linear current limiter circuit:
Limits the drain current ID to ILIM whatever the INPUT pin voltage. When the current
limiter is active, the device operates in the linear region, so power dissipation may
exceed the capability of the heatsink. Both case and junction temperatures increase,
and if this phase lasts long enough, junction temperature may reach the
overtemperature threshold Tjsh.
●
Overtemperature and short circuit protection:
These are based on sensing the chip temperature and are not dependent on the input
voltage. The location of the sensing element on the chip in the power stage area
ensures fast, accurate detection of the junction temperature. Overtemperature cutout
occurs at minimum 150 °C. The device is automatically restarted when the chip
temperature falls below 135 °C.
●
Status feedback:
In the case of an overtemperature fault condition, a status feedback is provided through
the INPUT pin. The internal protection circuit disconnects the input from the gate and
connects it instead to ground via an equivalent resistance of 100Ω. The failure can be
detected by monitoring the voltage at the INPUT pin, which will be close to ground
potential. Additional features of this device are ESD protection according to the Human
Body model and the ability to be driven from a TTL Logic circuit (with a small increase
in RDS(ON)).
16/22
Doc ID 1641 Rev 2
VNB49N04 - VNV49N04
Package and packing information
4
Package and packing information
4.1
ECOPACK®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.2
TO-263 (D2PAK) mechanical data
Table 10.
TO-263 (D2PAK) mechanical data
mm.
Inch
Dim.
Min.
Typ
Max.
Min.
Typ.
Max.
A
4.30
—
4.60
0.169
—
0.181
A1
2.49
—
2.69
0.098
—
0.106
B
0.70
—
0.93
0.027
—
0.036
B2
1.25
—
1.4
0.049
—
0.055
C
0.45
—
0.6
0.017
—
0.023
C2
1.21
—
1.36
0.047
—
0.053
D
8.95
—
9.35
0.352
—
0.368
E
10
—
10.28
0.393
—
0.404
G
4.88
—
5.28
0.192
—
0.208
L
15
—
15.85
0.590
—
0.625
L2
1.27
—
1.4
0.050
—
0.055
L3
1.4
—
1.75
0.055
—
0.068
Doc ID 1641 Rev 2
17/22
Package and packing information
VNB49N04 - VNV49N04
Figure 31. TO-263 (D2PAK) package dimension
D
A
C
DETAIL "A"
A2
C2
DETAIL "A"
A1
B2
E
G
L2
18/22
B
L
L3
Doc ID 1641 Rev 2
VNB49N04 - VNV49N04
4.3
Package and packing information
PowerSO-10 mechanical data
Table 11.
PowerSO-10 mechanical data
mm.
Inch
Dim.
Min.
Typ
Max.
Min.
Typ.
Max.
A
3.35
3.65
0.132
0.144
A1
0.00
0.10
0.000
0.004
B
0.40
0.60
0.016
0.024
c
0.35
0.55
0.013
0.022
D
9.40
9.60
0.370
0.378
D1
7.40
7.60
0.291
0.300
E
9.30
9.50
0.366
0.374
E1
7.20
7.40
0.283
0.291
E2
7.20
7.60
0.283
300
E3
6.10
6.35
0.240
0.250
E4
5.90
6.10
0.232
0.240
e
1.27
0.050
F
1.25
1.35
0.049
0.053
H
13.80
14.40
0.543
0.567
h
0.50
0.002
Q
1.70
0.067
0º
8º
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Package and packing information
VNB49N04 - VNV49N04
Figure 32. PowerSO-10 package dimension
B
0.10 A B
10
H
E
E
E2
1
SEATING
PLANE
e
B
DETAIL "A"
A
C
0.25
h
E4
D
= D1 =
=
=
SEATING
PLANE
A
F
A1
A1
L
DETAIL "A"
α
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5
Revision history
Revision history
Table 12.
Document revision history
Date
Revision
Change
01-Oct-1999
1
Initial release.
25-Nov-2010
2
Changed document template.
Removed ISOWATT220 package.
Updated Figure 9: Static drain-source on resistance (part 2)
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VNB49N04 - VNV49N04
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