STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET Features Order codes VDSS (@Tjmax) RDS(on) max. ID 3 3 STD9NM60N STF9NM60N 1 650 V < 0.745 Ω 2 1 TO-220 TO-220FP 6.5 A 2 STP9NM60N ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 3 1 DPAK Application Switching applications Figure 1. Internal schematic diagram Description $ This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ' 3 !-V Table 1. Device summary Order codes Marking Packages Packaging DPAK Tape and reel STD9NM60N STF9NM60N 9NM60N TO-220FP Tube STP9NM60N October 2010 TO-220 Doc ID 18063 Rev 1 1/16 www.st.com 16 Contents STD9NM60N, STF9NM60N, STP9NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 Doc ID 18063 Rev 1 STD9NM60N, STF9NM60N, STP9NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, DPAK TO-220FP VDS Drain-source voltage (VGS = 0) 600 V VGS Gate- source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C ID 6.5 (1) 6.5 A 4 4 Drain current (pulsed) 26 26 (1) A PTOT Total dissipation at TC = 25 °C 70 25 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) 2500 V IDM Drain current (continuous) at TC = 100 °C (1) (2) dv/dt (3) Tstg Tj Peak diode recovery voltage slope Storage temperature A 15 V/ns - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 6.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit DPAK Rthj-case Thermal resistance junction-case max TO-220 TO-220FP 1.79 5 °C/W Rthj-pcb (1) Thermal resistance junction-pcb minimum footprint Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 50 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu Table 4. Symbol Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 2.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 115 mJ Doc ID 18063 Rev 1 3/16 Electrical characteristics 2 STD9NM60N, STF9NM60N, STP9NM60N Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating, @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 3.25 A 0.63 0.745 Ω Min. Typ. Max. Unit V(BR)DSS Table 6. Symbol Ciss Coss Crss Coss eq.(1) Qg Qgs Qgd Rg 600 2 V Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 452 30 1.45 - pF pF pF Equivalent output catacitance VGS = 0, VDS = 0 to 480 V - 79 - pF Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 6.5 A, VGS = 10 V, (see Figure 18) - 17.4 3 9.7 - nC nC nC Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain - 4.8 - Ω 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. 4/16 Doc ID 18063 Rev 1 STD9NM60N, STF9NM60N, STP9NM60N Table 7. Symbol td(on) tr td(off) tf Table 8. Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time VDD = 480 V, ID = 6.5 A RG = 4.7 Ω VGS = 10 V (see Figure 17) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Min. Typ. - 28 23 52.5 26.7 Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Test conditions Test conditions Min. Typ. Max. Unit - 6.5 26 A A ISD = 6.5 A, VGS = 0 - 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 22) - 264 1.9 14.6 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) - 324 2.3 14.2 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 18063 Rev 1 5/16 Electrical characteristics STD9NM60N, STF9NM60N, STP9NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Thermal impedance for TO-220 Figure 5. Thermal impedance for DPAK Figure 7. Thermal impedance for TO-220FP AM08162v1 ID (A) is 10 10µs D S( on ) O Li per m at ite io d ni by n m this ax a R rea 1 Figure 3. 100µs 1ms 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.01 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for DPAK AM08163v1 ID (A) 10µs D S( on ) O Li per m at ite io d ni by n m this ax a R rea is 10 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 Figure 6. 10 1 100 Safe operating area for TO-220FP AM08164v1 ID (A) ) S( on O Li per m at ite io d ni by n m this ax a R rea is 10 10µs D 1 VDS(V) 100µs 1ms 10ms 0.1 0.01 0.1 6/16 Tj=150°C Tc=25°C Single pulse 1 10 100 VDS(V) Doc ID 18063 Rev 1 STD9NM60N, STF9NM60N, STP9NM60N Figure 8. Electrical characteristics Output characteristics Figure 9. AM08165v1 ID (A) VGS=10V 12 Transfer characteristics AM08166v1 ID (A) VDS=20V 12 10 10 6V 8 8 6 6 4 4 5V 2 2 0 0 5 10 20 15 25 0 0 VDS(V) 30 2 4 8 6 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM08167v1 VGS (V) VDS VGS VDD=480V 12 500 ID=6.5A AM08168v1 RDS(on) (Ω) VGS=10V 0.66 0.65 10 400 0.64 8 300 6 0.63 0.62 200 4 0.61 100 2 0 0 10 5 15 20 0 Qg(nC) Figure 12. Capacitance variations 0.59 0 1 2 3 4 5 6 ID(A) Figure 13. Output capacitance stored energy AM08169v1 C (pF) 0.60 AM08170v1 Eoss (µJ) 3.5 1000 3 Ciss 2.5 100 2 Coss 1.5 10 1 0.5 1 0.1 Crss 1 10 100 VDS(V) Doc ID 18063 Rev 1 0 0 100 200 300 400 500 600 VDS(V) 7/16 Electrical characteristics STD9NM60N, STF9NM60N, STP9NM60N Figure 14. Normalized gate threshold voltage vs temperature AM08171v1 VGS(th) Figure 15. Normalized on resistance vs temperature AM08172v1 RDS(on) (norm) (norm) 1.10 2.1 ID=3.25A 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.80 0.9 0.70 -50 -25 0.5 -50 -25 0.7 0 25 50 75 100 TJ(°C) Figure 16. Normalized BVDSS vs temperature AM08173v1 BVDSS (norm) ID=1mA 1.07 1.05 1.03 1.01 0.99 0.97 0.95 0.93 -50 -25 8/16 0 25 50 75 100 TJ(°C) Doc ID 18063 Rev 1 0 25 50 75 100 TJ(°C) STD9NM60N, STF9NM60N, STP9NM60N 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 21. Unclamped inductive waveform AM01471v1 Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 18063 Rev 1 10% AM01473v1 9/16 Package mechanical data 4 STD9NM60N, STF9NM60N, STP9NM60N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 Doc ID 18063 Rev 1 STD9NM60N, STF9NM60N, STP9NM60N Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 23. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 18063 Rev 1 11/16 Package mechanical data STD9NM60N, STF9NM60N, STP9NM60N TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S 12/16 Doc ID 18063 Rev 1 STD9NM60N, STF9NM60N, STP9NM60N Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. ty p ma x . A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4. 70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G Doc ID 18063 Rev 1 13/16 Package mechanical data 5 STD9NM60N, STF9NM60N, STP9NM60N Package mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 14/16 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 Doc ID 18063 Rev 1 MIN. 330 B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD9NM60N, STF9NM60N, STP9NM60N 6 Revision history Revision history Table 10. Document revision history Date Revision 20-Oct-2010 1 Changes First release. Doc ID 18063 Rev 1 15/16 STD9NM60N, STF9NM60N, STP9NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. 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