BB101C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0821-0300 (Previous ADE-208-505A) Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 Notes: 1. Marking is “AU–”. 2. BB101C is individual type number of RENESAS BBFET. Rev.3.00 Aug 10, 2005 page 1 of 7 1. Source 2. Gate1 3. Gate2 4. Drain BB101C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature VG2S ID Pch Tch Tstg Ratings 6 Unit V +6 –0 ±6 25 100 150 –55 to +150 V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) VG2S(off) ID(op) Min 6 +6 ±6 — — 0.2 0.4 10 Typ — — — — — — — 15 Max — — — +100 ±100 0.8 1.0 20 Unit V V V nA nA V V mA Test conditions ID = 200 µA, VG1S = VG2S = 0 IG1 = +10 µA, VG2S = VDS = 0 IG2 = +10 µA, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = ±5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V, ID = 100 µA VDS = 5 V, VG1S = 5 V, ID = 100 µA Forward transfer admittance |yfs| 16 22 — mS Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Ciss Coss Crss 1.2 0.7 — 16 — 1.7 1.1 0.012 20 2.0 2.2 1.5 0.03 — 3.0 pF pF pF dB dB VDS = 5 V, VG1 = 5 V, VG2S =4 V RG = 220 kΩ, f = 1 kHz VDS = 5 V, VG1 = 5 V VG2S =4 V, RG = 220 kΩ f = 1 MHz Rev.3.00 Aug 10, 2005 page 2 of 7 PG NF VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 220 kΩ VDS = 5 V, VG1 = 5 V, VG2S =4 V RG = 220 kΩ, f = 900 MHz BB101C Main Characteristics Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 VG1 RG Gate 2 Gate 1 Drain Source A ID Equivalent Circuit Gate 2 Drain Gate 1 Source Application Circuit VDS = 5 V VAGC = 4 to 0.3 V BBFET Input RG VGG = 5 V Rev.3.00 Aug 10, 2005 page 3 of 7 RFC Output BB101C 200 25 Drain Current ID (mA) 100 50 0 50 100 5 1 2 = 3 4 Drain Current vs. Gate1 Voltage 10 5 1 2 3 4 5 20 kΩ Ω 0 k 10 120 kΩ 150 k Ω 180 kΩ 220 kΩ 270 kΩ 0 33 0 k Ω 9 3 k Ω 470 RG = 16 V 3 12 V 2V 8 4 0 5 VDS = 5 V RG = 150 k Ω 4 Gate2 to Source Voltage VG2S (V) VG2S = 1 V 1 2 3 4 5 Gate1 Voltage V G1 (V) Drain Current vs.Gate1 Voltege Drain Current vs.Gate1 Voltege 20 20 VDS = 5 V RG = 220 kΩ 16 Drain Current ID mA) Drain Current ID (mA) RG Drain Current vs. Gate2 to Source Voltage 15 4V 3V 12 2V 8 4 0 kΩ 10 Drain to Source Voltage VDS (V) 20 16 0 15 0 200 Ω k 0 kΩ 2 1 50 1 kΩ 0 18 k Ω 0 22 k Ω 0 7 2 kΩ 330 k Ω 390 k Ω 470 Ambient Temperature Ta (°C) VDS = VG1 = 5 V 0 150 VG2S = 4 V VG1 = V 10 20 150 25 Drain Current ID (mA) Typical Output Characteristics Drain Current ID (mA) Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve VG2S = 1 V 1 2 3 Gate1 Voltage VG1 (V) Rev.3.00 Aug 10, 2005 page 4 of 7 4 5 VDS = 5 V RG = 390 kΩ 12 4V 3V 2V 8 4 VG2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 BB101C Forward Transfer Admittance vs. Gate1 Voltage 25 VDS = 5 V RG = 150 k Ω 20 f = 1 kHz 4V 3V 2V 15 10 5 VG2S = 1 V 0 1 2 3 5 4 Forward Transfer Admittance |yfs| (mS) Forward Transfer Admittance |yfs| (mS) Forward Transfer Admittance vs. Gate1 Voltage 25 VDS = 5 V RG = 220 k Ω 20 f = 1 kHz 2V 15 10 5 VG2S = 1 V 0 1 Gate1 Voltage VG1 (V) 3 4 5 Power Gain vs. Gate Resistance 30 25 VDS = 5 V RG = 390 k Ω f = 1 kHz 20 25 4V 3V 15 Power Gain PG (dB) Forward Transfer Admittance |yfs| (mS) 2 Gate1 Voltage VG1 (V) Forward Transfer Admittance vs. Gate1 Voltage 2V 10 5 20 15 10 5 VG2S = 1 V 0 1 2 3 0 50 5 4 Noise Figure vs. Gate Resistance 500 1000 2000 5000 Power Gain PG (dB) 30 3 2 0 50 100 200 Power Gain vs. Drain Current 4 1 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 900 MHz Gate Resistance RG (kΩ) Gate1 Voltage VG1 (V) Noise Figure NF (dB) 4V 3V VDS = 5 V VG1 = 5 V VG2S = 4 V f = 900 MHz 100 200 25 20 15 10 5 500 1000 2000 Gate Resistance RG (kΩ) Rev.3.00 Aug 10, 2005 page 5 of 7 5000 0 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz 5 10 15 20 25 Drain Current ID (mA) 30 BB101C Noise Figure vs. Drain Current Drain Current vs. Gate Resistance 30 4 Drain Current ID (mA) Noise Figure NF (dB) 25 3 2 1 0 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz 5 10 15 20 25 30 100 300 1000 3000 10000 Gain Reduction vs. Gate2 to Source Voltage Input Capacitance vs. Gate2 to Source Voltage 4 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = 220 kΩ f = 900 MHz Input Capacitance Ciss (pF) Gain Reduction GR (dB) VDS = 5 V VG1 = 5 V VG2S = 4 V 5 Gate Resistance RG (kΩ) 20 10 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) 4 VDS = 5 V VG1 = 5 V RG = 220 kΩ f = 1 MHz 3 2 1 1 2 3 4 Gate2 to Source Voltage VG2S (V) Rev.3.00 Aug 10, 2005 page 6 of 7 VDS = 5 V VG1 = 5 V RG = 220 kΩ f = 1 MHz 3 2 1 0 1 2 3 4 Gate2 to Source Voltage VG2S (V) Output Capacitance vs. Gate2 to Source Voltage Output Capacitance Coss (pF) 10 Drain Current ID (mA) 30 0 15 0 10 30 40 0 20 5 5 BB101C Package Dimensions JEITA Package Code RENESAS Code SC-82A Package Name PTSP0004ZA-A CMPAK-4(T) / CMPAK-4(T)V D MASS[Typ.] 0.006g A e2 e Q b1 c B B E HE LP Reference Symbol L A A x M L1 S A e2 A2 e l1 b5 S b c A A1 y S b2 A3 b e1 b1 b3 c1 c1 c A-A Section l1 b4 B-B Section Pattern of terminal position areas A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.35 0.1 1.8 1.15 1.8 0.3 0.1 0.2 Nom 0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1 Max 1.1 0.1 1.0 0.4 0.5 0.15 2.2 1.35 2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 1.5 0.9 0.2 Ordering Information Part Name BB101CAU-TL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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