BB505M Build in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0365-0100Z Rev.1.00 Jun.14.2004 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.5 dB typ. at f = 900 MHz High gain; PG = 24 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions. • Provide mini mold packages; MPAK-4 (SOT-143mod) Outline MPAK-4 2 3 1 4 Notes: 1. Source 2. Gate1 3. Gate2 4. Drain 1. Marking is “ES-”. 2. BB505M is individual type number of RENESAS BBFET. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage Gate1 to source voltage VDS VG1S 6 +6 –0 V V Gate2 to source voltage VG2S +6 –0 V ID Pchnote3 Tch Tstg 20 300 150 –55 to +150 mA mW °C °C Drain current Channel power dissipation Channel temperature Storage temperature Notes: 3. Value on the glass epoxy board (50 mm × 40 mm × 1 mm ). Rev.1.00, Jun.14.2004, page 1 of 8 BB505M Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 6 — — V ID = 200 µA, VG1S = VG2S = 0 Gate1 to source breakdown voltage V(BR)G1SS +6 — — V IG1 = +10 µA, VG2S = VDS = 0 Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current V(BR)G2SS +6 — — V IG2 = +10 µA, VG1S = VDS = 0 IG1SS IG2SS VG1S(off) VG2S(off) ID(op) — — 0.5 0.5 7 — — 0.7 0.7 11 +100 +100 1.0 1.0 15 nA nA V V mA VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V, ID = 100 µA VDS = 5 V, VG1S = 5 V, ID = 100 µA Forward transfer admittance |yfs| 28 33 38 mS VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 220 kΩ, f = 1 kHz Input capacitance Ciss 1.4 1.75 2.1 pF Output capacitance Coss 1.0 1.4 1.8 pF VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 220 kΩ, f = 1 MHz Reverse transfer capacitance Power gain Crss PG — 19 0.03 24 0.05 29 pF dB Noise figure NF — 1.5 2.2 dB VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 220 kΩ VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 220 kΩ, f = 900 MHz Bias Circuit for Operating Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG) VG2 RG Gate 2 Gate 1 Drain Source A ID Rev.1.00, Jun.14.2004, page 2 of 8 VG1 BB505M 900 MHz Power Gain, Noise Figure Test Circuit VD VG1 VG2 C6 C4 C5 R1 R2 C3 R3 RFC Output (50 Ω) D G2 L3 Input (50 Ω) L4 G1 S L1 L2 C1 C1, C2 C3 C4 to C6 R1 R2 R3 C2 : : : : : : Variable Capacitor (10 pF MAX) Disk Capacitor (1000 pF) Air Capacitor (1000 pF) 220 kΩ 47 kΩ 4.7 kΩ L2: L1: 10 3 3 8 10 26 (φ1mm Copper wire) Unit : mm 21 L4: L3: 18 10 10 7 7 29 RFC : φ1mm Copper wire with enamel 4 turns inside dia 6 mm Rev.1.00, Jun.14.2004, page 3 of 8 BB505M Typical Output Characteristics 200 100 0 50 100 150 Ambient Temperature Ta (°C) Ω 0k kΩ 0 = G 0 15 10 kΩ 0 2 2 Ω k 0 27 kΩ 0 33 5 0 200 12 15 R 300 VG2S = 4 V VG1 = VDS kΩ 20 18 Maximum Channel Power Dissipation Curve 400 Drain Current ID (mA) Channel Power Dissipation Pch* (mW) Main Characteristics 1 2 3 4 5 Drain to Source Voltage VDS (V) * Value on the glass epoxy board (50mm × 40mm × 1mm) Drain Current vs. Gate1 Voltage |yfs| (mS) 20 15 Forward Transfer Admittance Drain Current ID (mA) VDS = 5 V RG = 220 kΩ 4V 3V 10 2V 5 VG2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 50 VDS = 5 V VG1 = 5V 40 RG = 220 kΩ f = 1 kHz 3V 2V 20 10 VG2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 Input Capacitance vs. Gate2 to Source Voltage 20 4 VDS = 5 V VG1 = 5 V VG2S = 4 V 15 10 5 200 500 Gate Resistance RG (kΩ) Rev.1.00, Jun.14.2004, page 4 of 8 1000 Input Capacitance Ciss (pF) Drain Current ID (mA) 4V 30 Drain Current vs. Gate Resistance 0 100 Forward Transfer Admittance vs. Gate1 Voltage 3 2 VDS = 5 V VG1 = 5 V RG = 220 kΩ f = 1 MHz 1 0 0 2 1 3 4 Gate2 to Source Voltage VG2S (V) BB505M Power Gain vs. Gate Resistance Noise Figure vs. Gate Resistance NF (dB) VDS = 5 V VG1 = 5 V 40 VG2S = 4 V f = 900 MHz Noise Figure 30 20 10 0 100 25 Power Gain PG (dB) 4 20 VDS = 5 V VG1 = 5 V RG = 220 kΩ f = 900 MHz 5 1 1 2 3 4 Gate2 to Source Voltage VG2S (V) 40 VDS = 5 V VG1 = 5 V RG = 220 kΩ f = 900MHz 30 20 10 1 2 3 4 Gate2 to Source Voltage VG2S (V) Rev.1.00, Jun.14.2004, page 5 of 8 200 500 1000 Noise Figure vs. Gate2 to Source Voltage 5 4 3 2 1 Gain Reduction vs. Gate2 to Source Voltage Gain Reduction GR (dB) 2 Gate Resistance RG (kΩ) Power Gain vs. Gate2 to Source Voltage 10 0 3 100 1000 15 0 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 900 MHz 0 200 500 Gate Resistance RG (kΩ) Noise Figure NF (dB) Power Gain PG (dB) 50 0 VDS = 5 V VG1 = 5 V RG = 220 kΩ f = 900 MHz 1 2 Gate2 to Source Voltage 3 VG2S (V) 4 BB505M S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 Scale: 1 / div. 90° 1.5 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 -.2 -.4 -30° -150° -3 -2 -.6 -.8 -1 -90° Condition: VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 220 kΩ, Zo = 50 Ω 50 to 1000 MHz (50 MHz Step) Condition: VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 220 kΩ, Zo = 50 Ω 50 to 1000 MHz (50 MHz Step) S12 Parameter vs. Frequency Scale: 0.02 / div. 90° S22 Parameter vs. Frequency .8 60° 120° -60° -120° -1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 -10 -5 -4 -.2 -30° -150° -3 -.4 -60° -120° -90° Condition: VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 220 kΩ, Zo = 50 Ω 50 to 1000 MHz (50 MHz Step) Rev.1.00, Jun.14.2004, page 6 of 8 -2 -.6 -.8 -1 -1.5 Condition: VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 220 kΩ, Zo = 50 Ω 50 to 1000 MHz (50 MHz Step) BB505M S parameter (VDS = 5 V, VG1 = 5 V, VG2S = 4 V, RG = 200 kΩ, ZO = 50 Ω) S11 f (MHz) MAG S21 ANG MAG S12 ANG MAG S22 ANG MAG ANG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 0.991 0.991 0.993 0.983 0.977 0.969 0.962 0.952 0.944 0.929 0.914 0.897 0.881 0.863 0.842 -2.4 -5.9 -8.9 -11.9 -15.3 -18.5 -21.6 -25.2 -28.7 -32.2 -36.0 -40.0 -44.2 -48.3 -52.7 3.55 3.58 3.58 3.56 3.59 3.50 3.51 3.52 3.52 3.51 3.51 3.50 3.49 3.47 3.45 178.2 172.9 170.2 165.9 162.6 155.5 151.0 146.9 142.6 138.2 133.4 129.0 124.2 119.4 114.5 0.009 0.011 0.002 0.004 0.006 0.008 0.006 0.007 0.008 0.008 0.008 0.008 0.010 0.010 0.008 -64.5 18.0 61.4 77.7 87.6 87.8 94.6 80.9 87.1 78.1 74.7 84.8 72.6 67.5 78.7 0.976 0.995 0.990 0.986 0.986 0.990 0.984 0.982 0.977 0.973 0.968 0.963 0.957 0.950 0.943 -1.8 -3.1 -5.2 -6.5 -8.2 -12.9 -15.1 -17.3 -19.5 -21.8 -24.0 -26.1 -28.2 -30.4 -32.6 800 850 900 950 1000 0.819 0.797 0.775 0.746 0.721 -57.3 -62.0 -66.8 -71.8 -76.9 3.41 3.37 3.33 3.27 3.20 109.7 104.9 99.9 94.9 90.2 0.008 0.008 0.008 0.007 0.007 82.1 85.3 95.6 97.4 122.8 0.939 0.931 0.924 0.916 0.909 -34.6 -36.6 -38.7 -40.6 -42.4 Rev.1.00, Jun.14.2004, page 7 of 8 BB505M Package Dimensions As of January, 2003 Unit: mm 0.95 0 – 0.1 0.65 0.1 0.6 +– 0.05 0.16 – 0.06 2.8 1.5 ± 0.15 + 0.1 0.4 – 0.05 + 0.1 0.65 + 0.1 0.4 – 0.05 0.4 – 0.05 + 0.2 – 0.6 + 0.1 2.95 ± 0.2 1.9 ± 0.2 0.95 0.95 0.85 1.1 – 0.1 + 0.2 0.3 1.8 ± 0.2 Package Code JEDEC JEITA Mass (reference value) MPAK-4 — Conforms 0.013 g Ordering Information Part Name BB505MES- Quantity 3000 Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, Jun.14.2004, page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. 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