RENESAS 3SK298

3SK298
Silicon N-Channel Dual Gate MOS FET
REJ03G0817-0300
(Previous ADE-208-390A)
Rev.3.00
Aug.10.2005
Application
UHF / VHF RF amplifier
Features
• Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
• Capable of low voltage operation
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK–4)
2
3
1
4
Note:
1. Source
2. Gate1
3. Gate2
4. Drain
Marking is “ZP–“
Attention:
This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Rev.3.00 Aug 10, 2005 page 1 of 8
3SK298
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VG1S
VG2S
ID
Pch
Tch
Tstg
Ratings
12
±8
±8
25
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V(BR)DSX
Min
12
Typ
—
Max
—
Unit
V
Gate 1 to source breakdown voltage
Gate 2 to source breakdown voltage
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
V(BR)G1SS
V(BR) G2SS
IG1SS
IG2SS
IDS(on)
±8
±8
—
—
0.5
—
—
—
—
—
—
—
±100
±100
10
V
V
nA
nA
mA
Gate 1 to source cutoff voltage
VG1S(off)
0
—
+1.0
V
VDS = 10 V, VG2S = 3 V,
ID = 100 µA
Gate 2 to source cutoff voltage
VG2S(off)
0
—
+1.0
V
VDS = 10 V, VG1S = 3 V,
ID = 100 µA
Forward transfer admittance
|yfs|
16
20
—
mS
VDS = 6 V, VG2S = 3 V,
ID = 10 mA, f = 1 kHz
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Power gain
Noise figure
Noise figure
Ciss
Coss
Crss
PG
NF
PG
NF
NF
2.4
0.8
—
22
—
12
—
—
2.9
1.0
0.023
25
1.0
15
3.2
2.8
3.4
1.4
0.04
—
1.8
—
4.5
3.5
pF
pF
pF
dB
dB
dB
dB
dB
VDS = 6 V, VG2S = 3 V,
ID = 10 mA, f = 1 MHz
Rev.3.00 Aug 10, 2005 page 2 of 8
Test conditions
ID = 200 µA , VG1S = –3 V,
VG2S = –3 V
IG1 = ±10 µA, VG2S = VDS = 0
IG2 = ±10 µA, VG1S = VDS = 0
VG1S = ±6 V, VG2S = VDS = 0
VG2S = ±6 V, VG1S = VDS = 0
VDS = 6 V, VG1S = 0.75 V,
VG2S = 3 V
VDS = 6 V, VG2S = 3 V,
ID = 10 mA, f = 200 MHz
VDS = 6 V, VG2S = 3 V,
ID = 10 mA, f = 900 MHz
VDS = 6 V, VG2S = 3 V,
ID = 10 mA, f = 60 MHz
3SK298
Typical Output Characteristics
20
200
(mA)
100
16
1.2 V
12
1.0 V
8
0.8 V
Drain current
Channel Power Dissipation
150
50
0
50
100
150
0
200
Ta (°C)
VDS = 6 V
1.0 V
8
(mA)
16
ID
Pulse test
1.5 V
2.5 V
4
0
1
2
3
Gate1 to source voltage
12
4
5
10
VG1S
(V)
1.5 V
1.0 V
8
4
VG1S = 0.5 V
1
2
3
Gate2 to source voltage
4
5
VG2S
(V)
Power Gain vs. Drain Current
30
30
24
(dB)
VDS = 6 V
f = 1 kHz
PG
VG2S = 3.0 V
18
2.5 V
2.0 V
12
1.5 V
6
0.5 V
0.8
1.2
Gate1 to source voltage
Rev.3.00 Aug 10, 2005 page 3 of 8
24
18
12
VDS = 6 V
VG2S = 3 V
f = 200 MHz
6
1.0 V
0.4
Pulse test
2.0 V
Forward Transfer Admittance vs.
Gate1 to Source Voltage
0
VDS = 6 V
2.5 V
0
Power gain
(mS)
8
3.0 V
Drain current
(mA)
ID
2.0 V
VG2S = 0.5 V
|yfs|
6
20
3.0 V
12
4
Drain Current vs. Gate2 to Source Voltage
20
16
2
Drain to source voltage VDS (V)
Drain Current vs. Gate1 to Source Voltage
Drain current
0.6 V
4
VG1S = 0.4 V
Ambient Temperature
Forward transfer admittance
Pulse test
1.4 V
VG2S = 3 V
ID
Pch (mW)
Maximum Channel Power
Dissipation Curve
1.6
2.0
VG1S
(V)
0
1
2
5
Drain current
10
ID
(mA)
20
3SK298
Noise Figure vs. Drain Current
Power Gain vs. Drain to Source Voltage
30
2.4
PG (dB)
VDS = 6 V
VG2S = 3 V
f = 200 MHz
1.8
Power gain
Noise figure
NF (dB)
3.0
1.2
0.6
0
1
2
5
Drain current
ID
18
12
PG (dB)
NF (dB)
1.6
Power gain
Noise figure
0.8
VG2S = 3 V
ID = 10 mA
f = 200 MHz
0.4
6
8
10
Drain to source voltage
VDS
(V)
2
4
10
8
VDS
(V)
16
12
8
VDS = 6 V
VG2S = 3 V
f = 900 MHz
4
0
1
2
5
Drain current
Noise Figure vs. Drain Current
20
10
ID (mA)
Power Gain vs. Drain to Source Voltage
10
20
VDS = 6 V
VG2S = 3 V
f = 900 MHz
8
PG (dB)
NF (dB)
6
20
1.2
6
16
12
Power gain
Noise figure
4
Power Gain vs. Drain Current
2.0
4
2
0
1
2
Drain to source voltage
(mA)
Noise Figure vs. Drain to Source Voltage
0
VG2S = 3 V
ID = 10 mA
f = 200 MHz
6
0
20
10
24
2
Drain current
5
10
ID
Rev.3.00 Aug 10, 2005 page 4 of 8
(mA)
20
8
VG2S = 3 V
ID = 10 mA
f = 900 MHz
4
0
2
4
6
Drain to source voltage
8
VDS
10
(V)
3SK298
Noise Figure vs. Drain to Source Voltage
NF (dB)
5
4
Noise figure
3
2
0
Rev.3.00 Aug 10, 2005 page 5 of 8
VG2S = 3 V
ID = 10 mA
f = 900 MHz
1
6
8
10
Drain to source voltage
VDS
(V)
2
4
3SK298
S11 Parameter vs. Frequency
.8
1
.6
S21 Parameter vs. Frequency
90°
1.5
Scale: 0.5 / div.
60°
120°
2
.4
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–3
–.4
–30°
–150°
–2
–.6
–.8
–1
–60°
–120°
–1.5
–90°
Condition: VDS = 6 V , VG2S = 3 V
ID = 10 mA , Zo = 50Ω
50 to 1000 MHz (50 MHz step)
Condition: VDS = 6 V , VG2S = 3 V
ID = 10 mA , Zo = 50Ω
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90°
Scale: 0.002 / div.
.8
60°
120°
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Condition: VDS = 6 V , VG2S = 3 V
ID = 10 mA , Zo = 50Ω
50 to 1000 MHz (50 MHz step)
Rev.3.00 Aug 10, 2005 page 6 of 8
–2
–.6
–.8
–1
–1.5
Condition: VDS = 6 V , VG2S = 3 V
ID = 10 mA , Zo = 50Ω
50 to 1000 MHz (50 MHz step)
3SK298
S Parameter
(VDS = 6 V, VG2S = 3 V, ID = 10 mA, ZO = 50 Ω)
Freq.
(MHz)
S11
S21
S12
S22
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
MAG.
0.994
0.993
0.986
0.980
0.973
0.950
0.936
0.924
0.912
0.893
0.874
0.859
0.846
0.829
0.810
0.802
ANG.
–5.8
–11.0
–16.8
–22.5
–27.8
–33.0
–38.3
–43.4
–48.0
–52.5
–57.3
–62.0
–66.1
–69.8
–74.2
–78.0
MAG.
2.04
2.02
2.00
1.98
1.94
1.90
1.86
1.83
1.77
1.71
1.67
1.64
1.58
1.50
1.46
1.44
ANG.
173.6
167.4
161.5
155.5
149.6
142.6
137.1
131.6
126.8
121.0
115.5
111.1
106.7
102.1
97.1
92.7
MAG.
0.00116
0.00132
0.00229
0.00313
0.00427
0.00473
0.00536
0.00561
0.00562
0.00640
0.00638
0.00647
0.00667
0.00694
0.00661
0.00618
ANG.
76.9
85.7
78.2
73.5
68.7
63.9
64.3
64.5
60.9
53.5
49.3
49.0
50.2
49.3
46.6
43.7
MAG.
0.993
0.993
0.991
0.990
0.987
0.985
0.982
0.979
0.975
0.971
0.967
0.964
0.960
0.955
0.952
0.948
ANG.
–2.2
–4.5
–6.4
–8.5
–10.5
–12.5
–14.4
–16.2
–18.2
–20.2
–22.0
–23.9
–25.8
–27.6
–29.4
–31.2
850
900
950
1000
0.791
0.778
0.756
0.751
–81.6
–84.6
–88.5
–92.2
1.38
1.34
1.30
1.26
88.9
84.2
80.2
75.9
0.00622
0.00615
0.00576
0.00562
44.7
43.6
45.1
40.7
0.944
0.940
0.935
0.932
–33.2
–35.1
–36.8
–38.5
Rev.3.00 Aug 10, 2005 page 7 of 8
3SK298
Package Dimensions
JEITA Package Code
RENESAS Code
SC-82A
Package Name
PTSP0004ZA-A
CMPAK-4(T) / CMPAK-4(T)V
D
MASS[Typ.]
0.006g
A
e2
e
Q
b1
c
B
B
E
HE
LP
Reference
Symbol
L
A
A
x M
L1
S
A
e2
A2
e
l1
b5
S
b
c
A
A1
y S
b2
A3
b
e1
b1
b3
c1
c1
c
A-A Section
l1
b4
B-B Section
Pattern of terminal position areas
A
A1
A2
A3
b
b1
b2
b3
c
c1
D
E
e
e2
HE
L
L1
LP
x
y
b4
b5
e1
l1
Q
Dimension in Millimeters
Min
0.8
0
0.8
0.25
0.35
0.1
1.8
1.15
1.8
0.3
0.1
0.2
Nom
0.9
0.25
0.32
0.42
0.3
0.4
0.13
0.11
2.0
1.25
0.65
0.6
2.1
Max
1.1
0.1
1.0
0.4
0.5
0.15
2.2
1.35
2.4
0.7
0.5
0.6
0.05
0.05
0.45
0.55
1.5
0.9
0.2
Ordering Information
Part Name
3SK298ZP-TL-E
Quantity
3000
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Aug 10, 2005 page 8 of 8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0