RENESAS 3SK319

3SK319
Silicon N-Channel Dual Gate MOS FET
UHF RF Amplifier
REJ03G0820-0200
(Previous ADE-208-602)
Rev.2.00
Aug.10.2005
Features
• Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
• Excellent cross modulation characteristics
• Capable low voltage operation; +B= 5V
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
Note:
Marking is “YB–”.
Rev.2.00 Aug 10, 2005 page 1 of 7
1. Source
2. Gate1
3. Gate2
4. Drain
3SK319
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VG1S
VG2S
ID
Pch
Tch
Tstg
Ratings
6
±6
±6
20
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Symbol
V(BR)DSS
V(BR)G1SS
V(BR)G2SS
Min
6
±6
±6
Typ
—
—
—
Max
—
—
—
Unit
V
V
V
Test conditions
ID = 200 µA, VG1S = VG2S = 0
IG1 = ±10 µA, VG2S = VDS = 0
IG2 = ±10 µA, VG1S = VDS = 0
Gate2 to source breakdown
voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
IG1SS
IG2SS
VG1S(off)
VG2S(off)
IDS(op)
—
—
0.5
0.5
0.5
—
—
0.7
0.7
4
±100
±100
1.0
1.0
10
nA
nA
V
V
mA
Forward transfer admittance
|yfs|
18
24
32
mS
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Ciss
Coss
Crss
PG
NF
1.3
0.9
—
18
—
1.6
1.2
0.019
21
1.4
1.9
1.5
0.03
—
2.2
pF
pF
pF
dB
dB
VG1S = ±5 V, VG2S = VDS = 0
VG2S = ±5 V, VG1S = VDS = 0
VDS = 5 V, VG2S = 3 V, ID = 100 µA
VDS = 5 V, VG1S = 3 V, ID = 100 µA
VDS = 3.5 V, VG1S = 1.1 V,
VG2S = 3 V
VDS = 3.5 V, VG2S = 3 V
ID = 10 mA , f = 1 kHz
VDS = 3.5V, VG2S = 3V
ID = 10mA , f = 1MHz
Rev.2.00 Aug 10, 2005 page 2 of 7
VDS = 3.5 V, VG2S = 3 V
ID = 10 mA , f = 900 MHz
3SK319
Typical Output Characteristics
20
200
VG1S = 1.7 V
150
100
50
1.4 V
1.3 V
8
1.2 V
1.1 V
4
1.0 V
0.9 V
0
50
100
150
200
2
6
Drain Current vs.
Gate1 to Source Voltage
Drain Current vs.
Gate2 to Source Voltage
20
Drain Current ID (mA)
2.0 V
1.5 V
8
VDS = 3.5 V
2.5 V
12
4
1
2
3
16
1.8 V
1.6 V
12
1.4 V
8
1.2 V
4
VG1S = 1.0 V
0
5
4
Gate1 to Source Voltage VG1S (V)
10
2.0 V
VG2S = 1.0 V
1
2
3
Gate2 to Source Voltage
Forward Transfer Admittance
vs. Gate1 Voltage
4
5
VG2S (V)
Power Gain vs. Drain Current
30
25
VDS = 3.5 V
VG2S = 3 V
24
2.5 V
12
2V
1.5 V
6
Power Gain PG (dB)
20
18
15
10
VDS = 3.5 V
VG2S = 3 V
f = 900 MHz
5
1V
0
8
Drain to Source Voltage VDS (V)
16
0
0.8 V
4
Ambient Temperature Ta (°C)
VDS = 3.5 V
Drain Current ID (mA)
1.5 V
12
0
20
Forward Transfer Admittance |yfs| (mS)
VG2S = 3 V
1.6 V
16
Drain Current ID (mA)
Channel Power Dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
0.4
0.8
1.2
1.6
2.0
Gate1 to Source Voltage VG1S (V)
Rev.2.00 Aug 10, 2005 page 3 of 7
0
5
10
15
20
Drain Current ID (mA)
25
3SK319
Noise Figure vs. Drain Current
Power Gain vs. Drain to Source Voltage
25
VDS = 3.5 V
VG2S = 3 V
f = 900 MHz
4
Power Gain PG (dB)
Noise Figure NF (dB)
5
3
2
1
0
5
10
15
20
20
15
10
0
25
Drain Current ID (mA)
4
20
Power Gain PG (dB)
Noise Figure NF (dB)
6
8
10
25
VG2S = 3 V
ID = 10 mA
f = 900 MHz
3
2
1
2
4
6
8
10
Drain to Source Voltage VDS (V)
5
VDS = 3.5 V
f = 900MHz
4
3
2
1
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
Rev.2.00 Aug 10, 2005 page 4 of 7
VDS = 3.5 V
f = 900MHz
15
10
5
0
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
Noise Figure vs. Gate2 to Source Voltage
Noise Figure NF (dB)
4
Power Gain vs. Gate2 to Source Voltage
5
0
2
Drain to Source Voltage VDS (V)
Noise Figure vs. Drain to Source Voltage
0
VG2S = 3 V
ID = 10 mA
f = 900 MHz
5
3SK319
S11 Parameter vs. Frequency
.8
1
S21 Parameter vs. Frequency
90°
1.5
.6
Scale: 1 / div.
60°
120°
2
.4
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–3
–.4
–30°
–150°
–2
–.6
–.8
–1
–90°
Test Condition : VDS = 3.5 V , VG2S = 3 V
ID = 10mA
50 to 1000 MHz (50 MHz step)
Test Condition : VDS = 3.5 V , VG2S = 3 V
ID = 10mA
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.002 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Test Condition : VDS = 3.5 V , VG2S = 3 V
ID = 10mA
50 to 1000 MHz (50 MHz step)
Rev.2.00 Aug 10, 2005 page 5 of 7
–2
–.6
–.8
–1
–1.5
Test Condition : VDS = 3.5 V , VG2S = 3 V
ID = 10mA
50 to 1000 MHz (50 MHz step)
3SK319
S Parameter
(VDS = 4 V, VG2S = 3 V, ID = 10 mA, ZO = 50 Ω)
Freq.
(MHz)
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
S11
S21
MAG.
1.000
0.998
0.997
0.994
0.994
0.986
0.978
0.972
0.969
0.954
0.955
0.941
0.932
0.924
0.919
0.905
ANG.
–2.8
–5.8
–9.1
–12.2
–15.1
–18.5
–21.3
–24.1
–27.0
–29.7
–32.8
–35.7
–38.3
–41.3
–44.1
–46.9
MAG.
2.41
2.41
2.39
2.38
2.37
2.35
2.30
2.28
2.26
2.23
2.19
2.17
2.14
2.09
2.07
2.03
ANG.
176.3
171.9
167.6
163.7
159.8
155.5
151.4
147.6
143.6
140.0
135.9
132.2
128.6
125.0
121.5
117.9
MAG.
0.00068
0.00176
0.00223
0.00303
0.00365
0.00414
0.00484
0.00533
0.00588
0.00617
0.00666
0.00672
0.00694
0.00709
0.00689
0.00699
ANG.
89.1
88.5
80.7
76.6
79.1
75.4
75.0
78.0
71.6
69.5
71.5
70.6
69.0
71.4
69.0
68.9
MAG.
0.999
0.996
0.996
0.994
0.991
0.988
0.983
0.980
0.976
0.971
0.966
0.960
0.955
0.948
0.942
0.937
ANG.
–2.2
–4.5
–6.7
–8.7
–11.0
–13.2
–15.3
–17.4
–19.6
–21.7
–23.7
–25.6
–27.8
–29.9
–31.8
–33.8
850
900
950
1000
0.896
0.884
0.880
0.866
–49.2
–52.4
–54.7
–57.7
2.00
1.96
1.93
1.89
114.7
110.4
107.1
103.8
0.00644
0.00633
0.00585
0.00605
74.2
75.5
77.8
82.1
0.930
0.923
0.917
0.910
–35.8
–37.6
–39.8
–41.9
Rev.2.00 Aug 10, 2005 page 6 of 7
S12
S22
3SK319
Package Dimensions
JEITA Package Code
RENESAS Code
SC-61AA
Package Name
PLSP0004ZA-A
MASS[Typ.]
MPAK-4 / MPAK-4V
D
0.013g
A
e
e2
b1
Q
c
B
B
E
HE
Reference
Symbol
L
A
LP
L1
A
A3
x M S
b
A
e2
A2
e
I1
A
b5
S
b
b2
e1
A1
y S
b1
b3
c1
c
c1
I1
c
b4
A-A Section
B-B Section
Pattern of terminal position areas
A
A1
A2
A3
b
b1
b2
b3
c
c1
D
E
e
e2
HE
L
L1
LP
x
y
b4
b5
e1
I1
Q
Dimension in Millimeters
Min
1.0
0
1.0
0.35
0.55
0.1
2.7
1.35
2.2
0.35
0.15
0.25
Nom
1.1
0.25
0.42
0.62
0.4
0.6
0.13
0.11
1.5
0.95
0.85
2.8
Max
1.3
0.1
1.2
0.5
0.7
0.15
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.05
0.55
0.75
1.95
1.05
0.3
Ordering Information
Part Name
3SK319YB-TL-E
Quantity
3000
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0