3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0820-0200 (Previous ADE-208-602) Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) 2 3 1 4 Note: Marking is “YB–”. Rev.2.00 Aug 10, 2005 page 1 of 7 1. Source 2. Gate1 3. Gate2 4. Drain 3SK319 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 ±6 ±6 20 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 ±6 ±6 Typ — — — Max — — — Unit V V V Test conditions ID = 200 µA, VG1S = VG2S = 0 IG1 = ±10 µA, VG2S = VDS = 0 IG2 = ±10 µA, VG1S = VDS = 0 Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current IG1SS IG2SS VG1S(off) VG2S(off) IDS(op) — — 0.5 0.5 0.5 — — 0.7 0.7 4 ±100 ±100 1.0 1.0 10 nA nA V V mA Forward transfer admittance |yfs| 18 24 32 mS Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Ciss Coss Crss PG NF 1.3 0.9 — 18 — 1.6 1.2 0.019 21 1.4 1.9 1.5 0.03 — 2.2 pF pF pF dB dB VG1S = ±5 V, VG2S = VDS = 0 VG2S = ±5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 3 V, ID = 100 µA VDS = 5 V, VG1S = 3 V, ID = 100 µA VDS = 3.5 V, VG1S = 1.1 V, VG2S = 3 V VDS = 3.5 V, VG2S = 3 V ID = 10 mA , f = 1 kHz VDS = 3.5V, VG2S = 3V ID = 10mA , f = 1MHz Rev.2.00 Aug 10, 2005 page 2 of 7 VDS = 3.5 V, VG2S = 3 V ID = 10 mA , f = 900 MHz 3SK319 Typical Output Characteristics 20 200 VG1S = 1.7 V 150 100 50 1.4 V 1.3 V 8 1.2 V 1.1 V 4 1.0 V 0.9 V 0 50 100 150 200 2 6 Drain Current vs. Gate1 to Source Voltage Drain Current vs. Gate2 to Source Voltage 20 Drain Current ID (mA) 2.0 V 1.5 V 8 VDS = 3.5 V 2.5 V 12 4 1 2 3 16 1.8 V 1.6 V 12 1.4 V 8 1.2 V 4 VG1S = 1.0 V 0 5 4 Gate1 to Source Voltage VG1S (V) 10 2.0 V VG2S = 1.0 V 1 2 3 Gate2 to Source Voltage Forward Transfer Admittance vs. Gate1 Voltage 4 5 VG2S (V) Power Gain vs. Drain Current 30 25 VDS = 3.5 V VG2S = 3 V 24 2.5 V 12 2V 1.5 V 6 Power Gain PG (dB) 20 18 15 10 VDS = 3.5 V VG2S = 3 V f = 900 MHz 5 1V 0 8 Drain to Source Voltage VDS (V) 16 0 0.8 V 4 Ambient Temperature Ta (°C) VDS = 3.5 V Drain Current ID (mA) 1.5 V 12 0 20 Forward Transfer Admittance |yfs| (mS) VG2S = 3 V 1.6 V 16 Drain Current ID (mA) Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 0.4 0.8 1.2 1.6 2.0 Gate1 to Source Voltage VG1S (V) Rev.2.00 Aug 10, 2005 page 3 of 7 0 5 10 15 20 Drain Current ID (mA) 25 3SK319 Noise Figure vs. Drain Current Power Gain vs. Drain to Source Voltage 25 VDS = 3.5 V VG2S = 3 V f = 900 MHz 4 Power Gain PG (dB) Noise Figure NF (dB) 5 3 2 1 0 5 10 15 20 20 15 10 0 25 Drain Current ID (mA) 4 20 Power Gain PG (dB) Noise Figure NF (dB) 6 8 10 25 VG2S = 3 V ID = 10 mA f = 900 MHz 3 2 1 2 4 6 8 10 Drain to Source Voltage VDS (V) 5 VDS = 3.5 V f = 900MHz 4 3 2 1 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) Rev.2.00 Aug 10, 2005 page 4 of 7 VDS = 3.5 V f = 900MHz 15 10 5 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) Noise Figure vs. Gate2 to Source Voltage Noise Figure NF (dB) 4 Power Gain vs. Gate2 to Source Voltage 5 0 2 Drain to Source Voltage VDS (V) Noise Figure vs. Drain to Source Voltage 0 VG2S = 3 V ID = 10 mA f = 900 MHz 5 3SK319 S11 Parameter vs. Frequency .8 1 S21 Parameter vs. Frequency 90° 1.5 .6 Scale: 1 / div. 60° 120° 2 .4 3 4 5 .2 30° 150° 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –90° Test Condition : VDS = 3.5 V , VG2S = 3 V ID = 10mA 50 to 1000 MHz (50 MHz step) Test Condition : VDS = 3.5 V , VG2S = 3 V ID = 10mA 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.002 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Test Condition : VDS = 3.5 V , VG2S = 3 V ID = 10mA 50 to 1000 MHz (50 MHz step) Rev.2.00 Aug 10, 2005 page 5 of 7 –2 –.6 –.8 –1 –1.5 Test Condition : VDS = 3.5 V , VG2S = 3 V ID = 10mA 50 to 1000 MHz (50 MHz step) 3SK319 S Parameter (VDS = 4 V, VG2S = 3 V, ID = 10 mA, ZO = 50 Ω) Freq. (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 S11 S21 MAG. 1.000 0.998 0.997 0.994 0.994 0.986 0.978 0.972 0.969 0.954 0.955 0.941 0.932 0.924 0.919 0.905 ANG. –2.8 –5.8 –9.1 –12.2 –15.1 –18.5 –21.3 –24.1 –27.0 –29.7 –32.8 –35.7 –38.3 –41.3 –44.1 –46.9 MAG. 2.41 2.41 2.39 2.38 2.37 2.35 2.30 2.28 2.26 2.23 2.19 2.17 2.14 2.09 2.07 2.03 ANG. 176.3 171.9 167.6 163.7 159.8 155.5 151.4 147.6 143.6 140.0 135.9 132.2 128.6 125.0 121.5 117.9 MAG. 0.00068 0.00176 0.00223 0.00303 0.00365 0.00414 0.00484 0.00533 0.00588 0.00617 0.00666 0.00672 0.00694 0.00709 0.00689 0.00699 ANG. 89.1 88.5 80.7 76.6 79.1 75.4 75.0 78.0 71.6 69.5 71.5 70.6 69.0 71.4 69.0 68.9 MAG. 0.999 0.996 0.996 0.994 0.991 0.988 0.983 0.980 0.976 0.971 0.966 0.960 0.955 0.948 0.942 0.937 ANG. –2.2 –4.5 –6.7 –8.7 –11.0 –13.2 –15.3 –17.4 –19.6 –21.7 –23.7 –25.6 –27.8 –29.9 –31.8 –33.8 850 900 950 1000 0.896 0.884 0.880 0.866 –49.2 –52.4 –54.7 –57.7 2.00 1.96 1.93 1.89 114.7 110.4 107.1 103.8 0.00644 0.00633 0.00585 0.00605 74.2 75.5 77.8 82.1 0.930 0.923 0.917 0.910 –35.8 –37.6 –39.8 –41.9 Rev.2.00 Aug 10, 2005 page 6 of 7 S12 S22 3SK319 Package Dimensions JEITA Package Code RENESAS Code SC-61AA Package Name PLSP0004ZA-A MASS[Typ.] MPAK-4 / MPAK-4V D 0.013g A e e2 b1 Q c B B E HE Reference Symbol L A LP L1 A A3 x M S b A e2 A2 e I1 A b5 S b b2 e1 A1 y S b1 b3 c1 c c1 I1 c b4 A-A Section B-B Section Pattern of terminal position areas A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.55 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.62 0.4 0.6 0.13 0.11 1.5 0.95 0.85 2.8 Max 1.3 0.1 1.2 0.5 0.7 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.05 0.55 0.75 1.95 1.05 0.3 Ordering Information Part Name 3SK319YB-TL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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