2SK1215 Silicon N-Channel MOS FET REJ03G0813-0200 (Previous ADE-208-1176) Rev.2.00 Aug.10.2005 Application VHF amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1 2 *CMPAK is a trademark of Renesas Technology Corp. Rev.2.00 Aug 10, 2005 page 1 of 5 1. Gate 2. Drain 3. Source 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1. VGS = –4 V Symbol VDSX*1 VGSS ID IG Pch Tch Tstg Ratings 20 ±5 30 ±1 100 150 –55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate cutoff current Drain current Symbol V(BR)DSX Min 20 Typ — Max — Unit V Test conditions ID = 100 µA, VGS = –4 V IGSS IDSS*1 — 6 — — ±20 12 nA mA VGS = ±5 V, VDS = 0 VDS = 10 V, VGS = 0 — 14 2.5 1.6 0.03 — — –2.0 — — — — — 3 V mS pF pF pF dB dB VDS = 10 V, ID = 10 µA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz Gate to source cutoff voltage VGS(off) 0 Forward transfer admittance |yfs| 8 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Power gain PG 24 Noise figure NF — Note: 1. The 2SK1215 is grouped by IDSS as follows. Grade Mark IDSS E IGE 6 to 10 Rev.2.00 Aug 10, 2005 page 2 of 5 F IGF 8 to 12 VDS = 10 V, VGS = 0, f = 100 MHz 2SK1215 Typical Output Characteristics 10 VGS = 0 V Drain Current ID (mA) Channel Power Dissipation Pch (mW) Maximum Channel Dissipation Curve 600 400 200 50 100 150 Ambient Temperature Ta (°C) 0 8 6 –0.3 –0.4 2 –0.5 –0.6 –0.7 –0.8 0 Forward Transfer Admittance ⏐yfs⏐ (mS) Drain Current ID (mA) VDS = 10 V 8.0 F 6.0 E 4.0 2.0 0 16 12 8 4 0 VGS = 0 f = 1 kHz 2 4 6 8 Drain to Source Voltage VDS (V) 10 Input Capacitance vs. Drain to Source Voltage 100 20 VDS = 10 V f = 1 kHz 50 Input Capacitance Ciss (pF) Forward Transfer Admittance ⏐yfs⏐ (mS) 10 20 Forward Transfer Admittance vs. Drain Current 20 10 5 2 1 0.2 2 4 6 8 Drain to Source Voltage VDS (V) Forward Transfer Admittance vs. Drain to Source Voltage 10.0 –1.6 –1.2 –0.8 –0.4 Gate to Source Voltage VGS (V) –0.2 4 Typical Transfer Characteristics 0 –2.0 –0.1 0.5 1.0 2 5 10 Drain Current ID (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 20 10 VGS = 0 f = 1 MHz 5 2 1.0 0.5 0.5 1.0 2 5 10 20 Drain to Source Voltage VDS (V) 2SK1215 Output Capacitance vs. Drain to Source Voltage 0.5 20 Output Capacitance Coss (pF) Reverse Transfer Capacitance Crss (pF) Reverse Transfer Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 0.2 0.1 0.05 0.02 0.01 0.5 35 PG 25 f = 100 MHz 20 6 15 4 5 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2 0 12 Noise Figure NF (dB) Power Gain PG (dB) 30 NF 10 5 2 1.0 0.5 0.5 1.0 2 5 10 20 Drain to Source Voltage VDS (V) Power Gain, Noise Figure vs. Drain to Source Voltage 10 VGS = 0 f = 1 MHz 1.0 2 5 10 Drain to Source Voltage VDS (V) 20 2SK1215 Package Dimensions JEITA Package Code RENESAS Code SC-70 Package Name PTSP0003ZA-A D MASS[Typ.] CMPAK / CMPAKV 0.006g A e Q c E HE LP L A A x M L1 S A3 Reference Symbol b A e A2 A A1 S e1 b b1 l1 c1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 l1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.1 1.8 1.15 1.8 0.3 0.1 0.2 Nom 0.9 0.25 0.32 0.3 0.13 0.11 2.0 1.25 0.65 2.1 Max 1.1 0.1 1.0 0.4 0.15 2.2 1.35 2.4 0.7 0.5 0.6 0.05 0.45 1.5 0.9 0.2 Ordering Information Part Name 2SK1215IGETL 2SK1215IGFTL Quantity 3000 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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