To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI MITSUBISHI NchNch POWER POWER MOSFET MOSFET FY3ACJ-03F FY3ACJ-03F HIGH-SPEED HIGH-SPEED SWITCHING SWITCHING USE USE FY3ACJ-03F OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 ➀ ➂ SOURCE ➁ ➃ GATE ➄ ➅ ➆ ➇ DRAIN 0.4 1.27 ➀ ➄➅ ● 4V DRIVE ● VDSS ................................................................. 30V ● rDS (ON) (MAX) ................................................ 70mΩ ● ID ........................................................................ 3A ● Dual type ➁ ➃ ➆➇ ➂ SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (Tc = 25°C) Symbol Parameter Conditions VGS = 0V VDS = 0V Ratings Unit 30 ±20 V VDSS VGSS Drain-source voltage Gate-source voltage ID Drain current 3 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH 21 3 A A IS ISM Source current Source current (Pulsed) 1.4 5.6 A A PD Tch Maximum power dissipation Channel temperature Tstg — Storage temperature Weight 1.5 –55~+150 Typical value –55~+150 0.07 W °C °C g Sep. 2001 MITSUBISHI Nch POWER MOSFET FY3ACJ-03F HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR)DSS Drain-source breakdown voltage V (BR)GSS Gate-source breakdown voltage Test conditions ID = 1mA, V GS = 0V IG = ±100µA, VDS = 0V VGS = ±20V, VDS = 0V Limits Min. Max. — — — V V — — ±10 0.1 µA mA 1.5 2.0 50 80 70 120 V mΩ 150 260 — 210 — — — — pF pF — — 4.0 6.5 — — ns ns — — 21.0 8.5 0.75 — — — ns ns 1.10 83.3 °C/W 30 ±20 — — IGSS IDSS Gate-source leakage current Drain-source leakage current VGS (th) Gate-source threshold voltage rDS (ON) rDS (ON) ID = 3A, VGS = 10V 1.0 — VDS (ON) Ciss Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Input capacitance ID = 1.5A, V GS = 4V ID = 3A, VGS = 10V — — Coss Crss Output capacitance Reverse transfer capacitance VDS = 10V, VGS = 0V, f = 1MHz — — — td (on) tr Turn-on delay time td (off) tf VSD Rth (ch-a) Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDS = 30V, VGS = 0V ID = 1mA, V DS = 10V VDD = 15V, ID = 1.5A, VGS = 10V, R GEN = RGS = 50Ω IS = 1.4A, VGS = 0V Channel to ambient Unit Typ. — — — mΩ mV pF V Sep. 2001