RENESAS FY3ACJ-03F

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI
MITSUBISHI
NchNch
POWER
POWER
MOSFET
MOSFET
FY3ACJ-03F
FY3ACJ-03F
HIGH-SPEED
HIGH-SPEED
SWITCHING
SWITCHING
USE
USE
FY3ACJ-03F
OUTLINE DRAWING
Dimensions in mm
➄
➀
➃
6.0
4.4
➇
1.8 MAX.
5.0
➀ ➂ SOURCE
➁ ➃ GATE
➄ ➅ ➆ ➇ DRAIN
0.4
1.27
➀
➄➅
● 4V DRIVE
● VDSS ................................................................. 30V
● rDS (ON) (MAX) ................................................ 70mΩ
● ID ........................................................................ 3A
● Dual type
➁
➃
➆➇
➂
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
Parameter
Conditions
VGS = 0V
VDS = 0V
Ratings
Unit
30
±20
V
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
Drain current
3
V
A
IDM
IDA
Drain current (Pulsed)
Avalanche drain current (Pulsed) L = 10µH
21
3
A
A
IS
ISM
Source current
Source current (Pulsed)
1.4
5.6
A
A
PD
Tch
Maximum power dissipation
Channel temperature
Tstg
—
Storage temperature
Weight
1.5
–55~+150
Typical value
–55~+150
0.07
W
°C
°C
g
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FY3ACJ-03F
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
V (BR)DSS Drain-source breakdown voltage
V (BR)GSS Gate-source breakdown voltage
Test conditions
ID = 1mA, V GS = 0V
IG = ±100µA, VDS = 0V
VGS = ±20V, VDS = 0V
Limits
Min.
Max.
—
—
—
V
V
—
—
±10
0.1
µA
mA
1.5
2.0
50
80
70
120
V
mΩ
150
260
—
210
—
—
—
—
pF
pF
—
—
4.0
6.5
—
—
ns
ns
—
—
21.0
8.5
0.75
—
—
—
ns
ns
1.10
83.3
°C/W
30
±20
—
—
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
VGS (th)
Gate-source threshold voltage
rDS (ON)
rDS (ON)
ID = 3A, VGS = 10V
1.0
—
VDS (ON)
Ciss
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Input capacitance
ID = 1.5A, V GS = 4V
ID = 3A, VGS = 10V
—
—
Coss
Crss
Output capacitance
Reverse transfer capacitance
VDS = 10V, VGS = 0V, f = 1MHz
—
—
—
td (on)
tr
Turn-on delay time
td (off)
tf
VSD
Rth (ch-a)
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
VDS = 30V, VGS = 0V
ID = 1mA, V DS = 10V
VDD = 15V, ID = 1.5A, VGS = 10V, R GEN = RGS = 50Ω
IS = 1.4A, VGS = 0V
Channel to ambient
Unit
Typ.
—
—
—
mΩ
mV
pF
V
Sep. 2001