Data Sheet 10V Drive Nch MOSFET R6015FNX Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM φ3.2 10.0 4.5 8.0 2.5 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage VGSS garanteed to be ±30V . 1.2 1.3 0.8 2.54 2.54 0.75 2.6 (1) (2) (3) 5) Drive circuits can be simple. 6) Parallel use is easy. Application Switching Inner circuit ∗1 Packaging specifications Type Package Code Basic ordering unit (pieces) R6015FNX Bulk 500 (1) Gate (2) Drain (3) Source Absolute maximum ratings (Ta 25°C) Symbol Parameter Drain-source voltage Gate-source voltage VDSS VGSS Limits Unit 600 30 V V Continuous ID *3 15 A Pulsed IDP *1 60 A Continuous Pulsed *3 15 60 A A Avalanche Current IS ISP IAS Avalanche Energy Power dissipation (Tc=25℃) EAS PD *2 7.5 15 A mJ 50 W Channel temperature Range of storage temperature Tch Tstg 150 55 to 150 C C Symbol Rth (ch-c) Limits 2.5 Unit C / W Drain current Source current (Body Diode) *1 *2 (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L≒500H, VDD=50V, Rg=25, starting Tch=25°C *3 Limited only by maximum temperature allowed. Thermal resistance Parameter Channel to Case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A Data Sheet R6015FNX Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol IGSS Drain-source breakdown voltage V(BR)DSS Min. Typ. Max. Unit - - 100 nA VGS=±30V, VDS=0V 600 - - V ID=1mA, VGS=0V Conditions IDSS - - 100 A VDS=600V, VGS=0V VGS (th) 3 - 5 V VDS=10V, ID=1mA RDS (on)* - 0.27 0.35 ID=7.5A, VGS=10V l Yfs l* 4.5 - - S ID=7.5A, VDS=10V Input capacitance Ciss - 1660 - pF VDS=25V Output capacitance Coss - 1110 - pF VGS=0V Reverse transfer capacitance Crss - 45 - pF f=1MHz Turn-on delay time td(on) * - 38 - ns ID=7.5A, VDD 300V tr * - 45 - ns VGS=10V td(off) * - 120 - ns RL=40 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time tf * - 35 - ns RG=10 Total gate charge Fall time Qg * - 42 - nC ID=15A, Gate-source charge Gate-drain charge Qgs * Qgd * - 12 20 - nC nC VDD 300V VGS=10V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Reverse Recovery Time Symbol VSD * trr * Min. Typ. Max. Unit 60 90 1.5 120 V ns Conditions Is=15A, VGS=0V Is=15A, di/dt=100A/s *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A Data Sheet R6015FNX Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 30 5 Ta=25°C Pulsed Ta=25°C Pulsed VGS=10.0V 25 4 VGS=8.0V VGS=10.0V VGS=7.0V Drain Current : ID [A] Drain Current : ID [A] VGS=8.0V VGS=7.0V 3 VGS=6.5V VGS=6.0V 2 20 15 VGS=6.5V 10 VGS=5.5V VGS=6.0V 1 5 0 0 0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics Fig.4 Gate Threshold Voltage vs. Channel Temperature 100 6 VDS=10V ID=1mA pulsed 10 Gate Threshold Voltage : VGS(th) [V] VDS=10V pulsed Drain Currnt : ID [A] VGS=5.5V VGS=5.0V VGS=5.0V Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 5 4 3 0.01 0.001 2 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 -50 0 50 100 150 Channel Temperature : Tch [℃] Gate-Source Voltage : VGS [V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 1 0.7 Static Drain-Source On-State Resistance : RDS(on) [Ω] Static Drain-Source On-State Resistance RDS(on) [Ω] VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 VGS=10V pulsed 0.6 ID=15A 0.5 ID=7.5A 0.4 0.3 0.2 0.1 0 0.1 1 10 100 -50 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 50 100 150 Channel Temperature : Tch [℃] 3/6 2011.08 - Rev.A Data Sheet R6015FNX Fig.8 Source Current vs. Source-Drain Voltage Fig.7 Forward Transfer Admittance vs. Drain Current 100 100 VGS=0V pulsed 10 10 Source Current : Is [A] Forward Transfer Admittance Yfs [S] VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.01 0.01 0.1 1 10 100 0.0 0.5 Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.10 Switching Characteristics 2.0 10000 Ta=25°C Pulsed VDD≒300V VGS=10V RG=10Ω Ta=25°C Pulsed tf 0.8 1000 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [Ω] 1.5 Source-Drain Voltage : VSD [V] 1 0.6 ID=15A ID=7.5A 0.4 td(off) 100 td(on) tr 10 0.2 1 0 0 2 4 6 8 10 12 14 16 18 0.01 20 0.1 1 10 100 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Fig.12 Typical Capacitance vs. Drain-Source Voltage Fig.11 Dynamic Input Characteristics 10000 12 Ta=25°C VDD=300V ID=15A Pulsed 10 1000 Capacitance : C [pF] Gate-Source Voltage : VGS [V] 1.0 Drain Current : ID [A] 8 6 Ciss Coss 100 4 10 2 Ta=25°C f=1MHz VGS=0V Crss 1 0 0 5 10 15 20 25 30 35 40 45 0.01 50 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] Total Gate Charge : Qg [nC] 4/6 2011.08 - Rev.A Data Sheet R6015FNX Fig.13 Reverse Recovery Time vs. Source Current Fig.14 Maximum Safe Operating Area 100 1000 Operation in this area is limited by RDS(on) (VGS = 10V) 10 Drain Current : ID [ A ] Reverse Recovery Time : trr [ns] Ta=25°C Vgs=0V di/dt=100A/us Pulsed 100 PW = 100μs PW = 1ms 1 PW = 10ms 0.1 Ta=25°C Single Pulse 0.01 10 0 1 10 0.1 100 Source Current : IS [A] 1 10 100 1000 Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Ta=25°C Single Pulse 1 0.1 0.01 0.001 Rth(ch-a)=42.6°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A Data Sheet R6015FNX Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A