ROHM RP1L080SN

Data Sheet
4V Drive Nch MOSFET
RP1L080SN
 Dimensions (Unit : mm)
Structure
Silicon N-channel MOSFET
MPT6
(Single)
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
(6)
(5)
(4)
(1)
(2)
(3)
Application
Switching
Packaging specifications
 Inner circuit
Package
Type
Code
Basic ordering unit (pieces)
RP1L080SN
Taping
TR
1000

(6)
(5)
(4)
∗2
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Absolute maximum ratings (Ta = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Symbol
Limits
Unit
VDSS
60
20
V
V
Continuous
VGSS
ID
8.0
A
Pulsed
Continuous
IDP
IS
*1
32
1.6
A
A
Pulsed
ISP
PD
Tch
Tstg
*1
32
2.0
A
W
150
55to150
C
C
Power dissipation
Channel temperature
Range of storage temperature
*2
*1 Pw≤10s, Duty cycle≤1%
*2 Mounted on a ceramic board
Thermal resistance
Parameter
Symbol
Limits
Unit
Channel to Ambient
Rth (ch-a) *
62.5
C / W
* Mounted on a ceramic board
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1/6
2011.08 - Rev.A
Data Sheet
RP1L080SN
Electrical characteristics (Ta = 25°C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
Gate threshold voltage
Conditions
VGS=20V, VDS=0V
60
-
-
V
ID=1mA, V GS=0V
IDSS
-
-
1
A
VDS=60V, VGS=0V
VGS (th)
1.0
-
3.0
V
-
17
24
ID=8.0A, VGS=10V
-
19
27
m ID=8.0A, VGS=4.5V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
*
RDS (on)
-
20
28
Forward transfer admittance
l Yfs l*
8.5
-
-
S
ID=8.0A, VDS=10V
Input capacitance
Ciss
-
1700
-
pF
VDS=10V
Output capacitance
Coss
-
330
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
170
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
18
-
ns
ID=4.0A, VDD 30V
ID=8.0A, VGS=4.0V
tr *
-
25
-
ns
VGS=10V
td(off) *
-
70
-
ns
RL=7.5
tf *
-
30
-
ns
RG=10
Total gate charge
Qg *
-
40
-
nC
VDD
Gate-source charge
Qgs *
Gate-drain charge
Qgd *
-
5.0
9.0
-
nC
nC
ID=8.0A,
VGS=10V
Rise time
Turn-off delay time
Fall time
30V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
Is=8.0A, VGS=0V
*Pulsed
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2/6
2011.08 - Rev.A
Data Sheet
RP1L080SN
Electrical characteristic curves (Ta=25C)
Fig.2 Typical Output Characteristics (Ⅱ)
Fig.1 Typical Output Characteristics (Ⅰ)
8
8
VGS=10.0V
7
VGS=10.0V
Ta=25°C
pulsed
VGS=4.5V
VGS=4.0V
7
VGS=3.5V
VGS=2.9V
5
VGS=2.7V
6
Drain Current : ID [A]
Drain Current : ID [A]
6
VGS=2.6V
VGS=2.8V
VGS=4.0V
VGS=2.6V
VGS=2.8V
4
3
2
5
4
3
VGS=2.5V
2
VGS=2.5V
1
1
0
Ta=25°C
pulsed
0
0
0.2
0.4
0.6
0.8
1
0
2
Drain-Source Voltage : VDS [V]
100
8
10
1000
VGS=10V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mW]
Ta=25°C
pulsed
VGS=4.0V
VGS=4.5V
VGS=10V
10
0.01
0.1
1
10
100
10
1
0.01
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
Drain Current : ID [A]
1
10
100
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
1000
1000
VGS=4.5V
pulsed
VGS=4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Static Drain-Source On-State Resistance
RDS(on) [mW]
Static Drain-Source On-State Resistance
RDS(on) [mW]
6
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
4
Drain-Source Voltage : VDS [V]
100
10
1
0.01
0.1
1
10
Drain Current : ID [A]
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100
10
1
0.01
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
1
10
100
Drain Current : ID [A]
3/6
2011.08 - Rev.A
Data Sheet
RP1L080SN
Fig.7 Forward Transfer Admittance vs. Drain Current
Fig.8 Typical Transfer Characteristics
100
100
VDS=10V
pulsed
VDS=10V
pulsed
Drain Current : ID [A]
Forward Transfer Admittance
|Yfs| [S]
10
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
0.01
0.1
1
10
100
0.0
0.5
1.0
Drain Current : ID[A]
Fig.9 Source Current vs. Source-Drain Voltage
2.0
2.5
3.0
3.5
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
80
100
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
VGS=0V
pulsed
10
Source Current : IS [A]
1.5
Gate-Source Voltage : VGS [V]
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
Ta=25°C
pulsed
70
ID=8.0A
60
ID=4.0A
50
40
30
20
10
0.01
0
0.0
0.5
1.0
1.5
0
2
Source-Drain Voltage : VSD [V]
6
8
10
12
14
16
18
20
Gate-Source Voltage : VGS [V]
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
10000
12
VDD≒30V
VGS=10V
RG=25Ω
Ta=25°C
Pulsed
Ta=25°C
VDD=30V
ID=8A
Pulsed
10
Gate-Source Voltage : VGS [V]
1000
Switching Time : t [ns]
4
tf
td(off)
100
td(on)
10
tr
8
6
4
2
1
0
0.01
0.1
1
10
0
Drain Current : ID [A]
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5
10
15
20
25
30
35
40
Total Gate Charge : Qg [nC]
4/6
2011.08 - Rev.A
Data Sheet
RP1L080SN
Fig.14 Maximum Safe Operating Area
Fig.13 Typical Capacitance vs. Drain-Source Voltage
100000
1000
Ta=25°C
f=1MHz
VGS=0V
Operation in this area
is limited by RDS(on)
(VGS = 10V)
100
Drain Current : ID[ A ]
Capacitance : C [pF]
10000
1000
Ciss
100
Crss
Coss
10
10
PW = 100μs
1
PW = 1ms
1
PW = 10ms
Ta=25°C
Single Pulse
Mounted on a ceramic board.
（30mm × 30mm × 0.8mm)
0.1
DC Operation
0.01
0.01
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage : VDS [ V ]
Drain-Source Voltage : VDS [V]
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
Normalized Transient Thermal Resistance : r（t）
10
Ta=25°C
Single Pulse
1
0.1
0.01
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=62.5°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse width : Pw (s)
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5/6
2011.08 - Rev.A
Data Sheet
RP1L080SN
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
ID
VDS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
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Fig.2-2 Gate Charge Waveform
6/6
2011.08 - Rev.A
Notice
Notes
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R1120A