ROHM RF601B2DTL

Data Sheet
Fast recovery diodes
RF601B2D
Dimensions (Unit : mm)
Land size figure (Unit : mm)
6.0
Features
1)Power mold type.(CPD)
2)Ultra Low VF
1.6
3.0
1.6
2.0
6.0
Applications
General rectification
3)Very fast recovery
4)Low switching loss
Structure
2.3 2.3
CPD
Construction
Silicon epitaxial planer
Structure
(2)
(1)
(3)
 Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
Reverse voltage (repetitive peak)
200
VRM
Reverse voltage (DC)
200
VR
Average rectified forward current (*1)
6
Io
Forward current surge peak (60Hz/1cyc)
40
IFSM
Junction temperature
150
Tj
Storage temperature
55 to 150
Tstg
(*1) Business frequencies, Rating of R-load, Tc=128C, 1/2 Io per diode
Electrical characteristic (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
Reverse current
IR
Reverse recovery time
Thermal impedance
jc
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
trr
Min.
-
Typ.
0.87
0.01
Max.
0.93
10
-
14
-
25
6
1/3
Unit
V
V
A
A
C
C
Unit
V
A
ns
C/W
Conditions
IF=3A
VR=200V
IF=0.5A,IR=1A,Irr=0.25*I R
JUNCTION TO CASE
2011.05 - Rev.F
Data Sheet
RB601B2D
Electrical characteristic curves
10000
1
Ta=125C
Ta=75C
Ta=25C
0.1
Ta=-25C
0.01
REVERSE CURRENT:IR(nA)
Ta=75C
100
z
10
Ta=-25C
1
100
150
0
200
AVE:859.4mV
840
Ta=25°C
VR=0pcs
n=30pcs
80
70
60
50
40
30
AVE:4.60nA
20
130
120
110
100
80
70
60
0
50
IR DISPERSION MAP
Ct DISPERSION MAP
1000
1cyc
8.3m
150
100
AVE:126.0A
0
REVERSE RECOVERY TIME:trr(ns)
30
200
AVE:99.4pF
90
10
VF DISPERSION MAP
300
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
5
AVE:13.7ns
Ifsm
8.3m 8.3m
100
1cyc
10
1
0
1
IFSM DISPERSION MAP
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
30
Ta=25°C
f=1MHz
VR=0V
n=10pcs
140
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
860
20
150
90
REVERSE CURRENT:IR(nA)
870
Ifsm
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100
Ta=25C
IF=3A
n=30pcs
880
850
50
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
890
FORWARD VOLTAGE:V F(mV)
10
1
0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:I FSM(A)
Ta=25°C
0.1
0
50
f=1MHz
1000
0.001
250
Ta=125C
PEAK SURGE
FORWARD CURRENT:I FSM(A)
FORWARD CURRENT : I F(A)
Ta=150C
100
Ta=150C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
trr DISPERSION MAP
2/3
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
2011.05 - Rev.F
PEAK SURGE
FORWARD CURRENT:I FSM(A)
Ifsm
t
100
10
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
0A
Io
0V
V
VR
R
Rth(j-a)
10
Rth(j-c)
IM=100mA
1
IF=3A
300us
0.001
0.01
T
D=1/2
D=t/T
D=t/T
V
VR=100V
R=100V
Tj=150C
DC
5
Sin(180)
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
0
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(C)
DETATING CURVEﾞ(Io-Ta)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4
DC
T
D=t/T
VR=100V
Tj=150C
D=1/2
5
Sin(180)
4
6
8
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
10
No break at 30kV No break at 30kV
VR
t
2
30
Io
0V
10
0
1000
25
20
15
10
5
0
0
0
Sin( =180)
6
0
0.1
0A
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
t
D=1/2
tim
15
10
DC
8
2
1ms
0.1
15
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
10
Mounted on a epoxy board
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
100
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
1000
1
Data Sheet
RB601B2D
0
25
50
75
100
125
CASE TEMPARATURE:Tc(C)
DETATING CURVEﾞ(Io-Tc)
3/3
150
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
2011.05 - Rev.F
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A