Data Sheet Fast Recovery Diode RF071M2S Dimensions (Unit : mm) Applications General rectification Land size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 Features 1)Small power mold type.(PMDU) 2)Ultra low VF 3)Ultra high switching speed 4)Low switching loss PMDU Construction Silicon epitaxial planer Structure 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping dimensions (Unit : mm) 4.0±0.1 1.81±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) IF Forward current（DC） Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Limits 200 200 1 0.7 15 150 55 to 150 8.0±0.2 3.71±0.1 0.25±0.05 1.75±0.1 φ1.55±0.05 2.0±0.05 3.5±0.05 4.0±0.1 φ1.0±0.1 1.5MAX Unit V V A A A °C °C (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristics(Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol VF Min. Typ. Max. Unit IR - 0.79 0.01 0.85 10 V μA IF=0.7A VR=200V trr - 12 25 ns IF=0.5A,IR=1A,Irr=0.25*IR 1/3 Conditions 2011.05 - Rev.E Data Sheet RF071M2S 1 Ta=150℃ 10000 100 Ta=125℃ Ta=125℃ Ta=75℃ 0.01 Ta=25℃ 1000 Ta=75℃ 100 Ta=25℃ 10 0.1 10 0.01 0.001 0 1 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 820 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 200 0 100 810 800 790 AVE:795.7mV 780 80 60 50 40 AVE:11.1nA 30 20 70 50 40 30 AVE:37.0pF 20 0 0 IR DISPERSION MAP Ct DISPERSION MAP 100 50 AVE:63.0A 1000 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 15 10 AVE:12.2ns 5 0 30 60 10 30 150 80 10 VF DISPERSION MAP 200 25 Ta=25℃ f=1MHz VR=0V n=10pcs 90 70 770 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 Ta=25℃ VR=200V n=30pcs 90 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=0.7A n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) Ta=-25℃ 1 Ta=-25℃ PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.1 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) f=1MHz f=1MHz Ta=150℃ Ifsm 8.3ms 8.3ms 1cyc 100 0 10 1 1 trr DISPERSION MAP IFSM DISRESION MAP 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 100 100 10 IM=10mA 1ms 1 IF=0.5A Rth(j-a) 300us 10 Rth(j-c) 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. D=1/2 0.6 Sin(θ＝180) 0.4 0.2 0.1 1 DC 0.8 time FORWARD POWER DISSIPATION:Pf(W) 1000 0.001 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 100 1000 0 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2011.05 - Rev.E Data Sheet RF071M2S 2 Io VR D=t/T VR=100V Tj=150℃ t T Io T DC 1 D=1/2 0A 0 0V 0 2 Io Io tt TT VR D=t/T VR=100V VR=100V Tj=150℃ Tj=150℃ DC 1 D=1/2 Sin(θ＝180) Sin(θ＝180) 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. No break at 30kV 25 20 15 10 AVE:13.6kV 5 0 0 0 ELECTROSTATIC DISCHARGE TEST ESD(KV) 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 30 3 3 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 3/3 150 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2011.05 - Rev.E Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A