ROHM RSH065N06

4V Drive Nch MOSFET
RSH065N06
Dimensions (Unit : mm)
Structure
Silicon N-channel MOSFET
SOP8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Each lead has same dimensions
Packaging specifications
Package
Type
Inner circuit
(8)
Taping
(7)
(6)
(5)
(8) (7) (6) (5)
TB
Code
Basic ordering unit (pieces)
2500
RSH065N06
∗2
(1) (2) (3) (4)
∗1
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipatino
Channel temperature
Range of storage temperature
Symbol
Limits
VDSS
60
VGSS
20
±6.5
ID
IDP ∗1
±26
IS
1.6
26
ISP ∗1
PD ∗2
2.0
Tch
150
Tstg
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-A) ∗
∗ Mounted on a ceramic board.
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Limits
62.5
Unit
°C / W
1/4
2009.12 - Rev.A
RSH065N06
Data Sheet
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Parameter
−
60
−
1.0
−
−
−
4
−
−
−
−
−
−
−
−
−
−
−
−
−
−
24
28
31
−
900
200
100
13
25
60
20
11
2
4
10
−
1
2.5
37
44
48
−
−
−
−
−
−
−
−
16
−
−
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗
RDS (on)
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Unit
μA
V
μA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=20V, VDS=0V
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VDS=10V, ID=1mA
ID=6.5A, VGS=10V
ID=6.5A, VGS=4.5V
ID=6.5A, VGS=4.0V
ID=6.5A, VDS=10V
VDS=10V
VGS=0V
f=1MHz
ID=3.3A, VDD 30V
VGS=10V
RL=9.1Ω
RG=10Ω
ID=6.5A, VDD 30V
VGS=5V
RL=4.6Ω, RG=10Ω
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
Symbol
VSD
∗
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
IS=1.6A, VGS=0V
∗Pulsed
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/4
2009.12 - Rev.A
RSH065N06
Data Sheet
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1000
10
1
0.01
0.1
GATE-SOURCE VOLTAGE : VGS (V)
VGS=4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
10
1
0.01
0.1
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Fig.1 Typical Transfer Characteristics
1000
VGS=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VDS=10V
Pulsed
1
10
1
0.01
0.1
1
10000
Ta=25°C
Pulsed
50
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙΙ)
10
0
5
10
Ta=25°C
f=1MHz
VGS=0V
Ciss
1000
Coss
100
Crss
10
0.01
15
0.1
1
10
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Typical Capacitance
vs. Drain-Source Voltage
td(off)
100
tr
10
td(on)
1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.7 Switching Characteristics
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○
Ta=25°C
VDD=30V
ID=6.5A
RG=10Ω
Pulsed
SOURCE CURRENT : IS (A)
tf
GATE-SOURCE VOLTAGE : VGS (V)
SWITCHING TIME : t (ns)
1000
VGS=0V
Pulsed
10
Ta=25°C
VDD=30V
VGS=10V
RG=10Ω
Pulsed
5
0
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.0
0
100
GATE-SOURCE VOLTAGE : VGS (V)
10
10000
10
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙ)
ID=3.25A
DRAIN CURRENT : ID (A)
100
Fig.2 Static Drain-Source
On-State Resistance
vs. Drain Current(Ι)
ID=6.5A
0
VGS=4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DRAIN CURRENT : ID (A)
100
10
1000
DRAIN CURRENT : ID (A)
CAPACITANCE : C (pF)
DRAIN CURRENT : ID (A)
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Electrical characteristic curves
5
10
15
20
TOTAL GATE CHARGE : Qg (nC)
Fig.8 Dynamic Input Characteristics
3/4
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Source Current vs.
Source-Drain Voltage
2009.12 - Rev.A
RSH065N06
Data Sheet
Measurement circuit
Pulse Width
VGS
ID
VDS
RL
VDS
D.U.T.
90%
50%
10%
VGS
50%
10%
10%
RG
VDD
90%
td(on)
ton
Fig.10 Switching Time Test Circuit
90%
td(off)
tr
tr
toff
Fig.11 Switching Time Waveforms
VG
VGS
ID
VDS
RL
IG (Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.12 Gate Charge Test Circuit
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Fig.13 Gate Charge Waveform
4/4
2009.12 - Rev.A
Notice
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