ROHM SH8K22

4V Drive Nch+Nch MOSFET
SH8K22
Dimensions (Unit : mm)
Structure
Silicon N-channel MOSFET
SOP8
Features
1) Built-in G-S Protection Diode.
2) Small surface Mount Package (SOP8).
Application
Power switching, DC / DC converter, Inverter
Each lead has same dimensions
Packaging specifications
Package
Type
Inner circuit
(8)
Taping
(7)
(6)
(5)
(8) (7) (6) (5)
TB
Code
Basic ordering unit (pieces)
2500
SH8K22
∗2
∗2
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
PD
Chanel temperature
Range of Storage temperature
Tch
Tstg
∗1
∗1
Symbol
VDSS
VGSS
ID
IDP *1
IS
ISP *1
Total power dissipation
(1) (2) (3) (4)
*2
Limits
Unit
45
V
±20
V
±4.5
A
±18
A
1
A
18
A
2
W / TOTAL
1.4
W / ELEMENT
o
150
C
o
-55 to +150
C
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
*1 PW  10ｓ、Duty cycle  1
*2 Mounted on a ceramic board
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1/4
2009.12 - Rev.A
SH8K22
Data Sheet
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Symbol
Min.
Typ.
Max.
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
IDSS
Zero gate voltage drain current
Gate threshold voltage
VGS (th)
Parameter
−
45
−
1.0
−
−
−
3.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
33
41
46
−
550
140
70
12
18
42
12
6.8
2.0
2.9
±10
−
1
2.5
46
57
64
−
−
−
−
−
−
−
−
9.6
−
−
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Unit
μA
V
μA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±20V, VDS=0V
ID= 1mA, VGS=0V
VDS= 45V, VGS=0V
VDS= 10V, ID= 1mA
ID= 4.5A, VGS= 10V
ID= 4.5A, VGS= 4.5V
ID= 4.5A, VGS= 4.0V
VDS= 10V, ID= 4.5A
VDS= 10V
VGS=0V
f=1MHz
VDD 25V
ID= 2.5A
VGS= 10V
RL= 10Ω
RG=10Ω
VDD 25V, VGS= 5V
ID= 4.5A
RL= 5.6Ω, RG= 10Ω
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
Symbol
VSD *
Min.
Typ.
－
－
Max.
1.2
Unit
V
Condition
IS=4.5A/VGS=0V
* pulsed
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2/4
2009.12 - Rev.A
SH8K22
Data Sheet
Electrical characteristic curves
Ta=125 C
o
75 C
o
25 C
o
-25 C
0.01
1.0
75 C
o
25 C
100
o
0.1
o
10
1.5
2.0
2.5
3.0
0.1
1
-25oC
0.01
10
Drain Current : ID [A]
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (1)
100
Ta=125 C
75oC
10
o
25 C
-25oC
1
0.01
10
VGS=0V
pulsed
Source Current : Is [A]
Static Drain-Source On-State
Resistance　RDS(on) [m]
10
150
o
1
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (2)
Ta=25oC
pulsed
VGS=4V
pulsed
100
0.1
Drain Current : ID [A]
200
1000
75oC
25oC
1
0.01
3.5
Ta=125oC
10
1
Fig.1 Typical Transfer Characteristics
ID=4.5A
7
50
1
Ta=125oC
75oC
25oC
-25oC
0.1
ID=2.25A
0.1
1
0.01
0
10
0
5
Drain Current : ID [A]
10
0
15
0.5
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (3)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1000
Switching Time : t [ns]
Ta=25oC
f=1MHz
VGS=0V
Ciss
Coss
100
10
Ta=25oC
VDD=25V
VGS=10V
1000
RG=10
Pulsed
tf
100
td(off)
td(on)
10
1.5
Fig.6 Source-Current vs.
Source-Drain Voltage
10000
10000
1
Source-Drain Voltage : VSD [V]
Gate-Source Voltage : VGS [V]
Gate-Source Voltage : VGS [V]
Static Drain-Source On-State
Resistance RDS(on) [m]
100
o
-25 C
Gate-Source Voltage : VGS [V]
Capacitance : C [pF]
VGS=4.5V
pulsed
Static Drain-Source On-State
Resistance　RDS(on) [m]
Static Drain-Source On-State
Resistance　RDS(on) [m]
1
VGS=10V
pulsed
o
Ta=125 C
VDS=10V
pulsed
Drain Currnt : ID [A]
1000
1000
10
tr
Ta=25oC
VDD=25V
ID=4.5A
8
RG=10
Pulsed
6
4
2
Crss
10
0
1
0.01
0.1
1
10
Drain-Source Voltage : VDS [V]
Fig.7 Typical capacitance vs.
Source-Drain Voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
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100
0.01
0.1
1
Drain Current : ID [A]
Fig.8 Switching Characteristics
3/4
10
0
2
4
6
8
10
12
Total Gate Charge : Qg [nC]
Fig.9 Dynamic Input Characteristics
2009.12 - Rev.A
SH8K22
Data Sheet
Measurement circuits
Pulse Width
VGS
ID
VDS
RL
VDS
D.U.T.
90%
50%
10%
VGS
50%
10%
10%
RG
VDD
90%
td(on)
ton
Fig.10 Switching Time Test Circuit
90%
td(off)
tr
tr
toff
Fig.11 Switching Time Waveforms
VG
VGS
ID
VDS
RL
IG (Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.12 Gate Charge Test Circuit
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c 2009 ROHM Co., Ltd. All rights reserved.
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Fig.13 Gate Charge Waveform
4/4
2009.12 - Rev.A
Notice
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