1.5V Drive Pch MOSFET RW1A020ZP zDimensions (Unit : mm) zStructure WEMT6 Silicon P-channel MOSFET zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (6) (5) (4) (1) (2) (3) Abbreviated symbol : ZE zInner circuit zApplications Switching (6) (5) ∗2 zPackaging specifications Package Type (4) Taping Code T2R Basic ordering unit (pieces) 8000 ∗1 RW1A020ZP (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg ∗1 ∗1 ∗2 Limits −12 ±10 ±2 ±6 −0.5 −6 0.7 150 −55 to +150 Unit V V A A A A W °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits Unit 179 °C / W ∗ When mounted on a ceramic board. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.05 - Rev.A Data Sheet RW1A020ZP zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −12 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.3 − ∗ − Static drain-source on-state RDS (on) resistance − − Forward transfer admittance Yfs ∗ 2 Input capacitance Ciss − Output capacitance − Coss Reverse transfer capacitance − Crss Turn-on delay time td (on) ∗ − Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge Qgd ∗ − Typ. Max. − − − − 75 105 150 200 − 770 75 60 10 17 65 35 6.5 1.3 0.8 ±10 − −1 −1.0 105 145 225 400 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −2A, VGS= −4.5V ID= −1A, VGS= −2.5V ID= −1A, VGS= −1.8V ID= −0.4A, VGS= −1.5V VDS= −6V, ID= −2A VDS= −6V VGS=0V f=1MHz VDD −6V ID= −1A VGS= −4.5V RL 6Ω RG=10Ω RL 3Ω VDD −6V ID= −2A RG=10Ω VGS= −4.5V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. Unit − − −1.2 V Conditions IS= −2A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.05 - Rev.A Data Sheet RW1A020ZP -10V -4.5V -2.5V -1.8V 2 1.5 -1.6V 1 -1.8V 3 -4.5V -2.5V 2.5 2 -1.5V 1.5 VGS= -1.2V 1 VGS= -1.5V 0.5 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : -VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 100 4 6 8 0 10 1000 VGS= -4.5V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 DRAIN-CURRENT : -ID [A] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 1 10 10 0.01 100 DRAIN-CURRENT : -ID [A] DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/4 10 DRAIN-CURRENT : -ID [A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 1 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 0.1 2 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 VGS= -1.5V Pulsed 100 1.5 10 10 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) VGS= -1.8V Pulsed 0.1 VGS= -2.5V Pulsed DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 100 1 1 Fig.3 Typical Transfer Characteristics 10 1000 0.5 GATE-SOURCE VOLTAGE : -VGS[V] 100 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 0.01 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 1 Ta= 75°C Ta= 25°C Ta= - 25°C Fig.2 Typical Output Characteristics(Ⅱ) VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 0.1 Ta= 125°C DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) Ta=25°C Pulsed 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.2 1 0.001 0 0 VDS= -6V Pulsed 0.5 0 1000 10 Ta=25°C Pulsed -10V 3.5 3 2.5 4 Pulsed DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] 3.5 DRAIN CURRENT : -ID [A] zElectrical characteristics curves 4 ｗ Ta=25°C 10 VDS= -6V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 2009.05 - Rev.A Data Sheet RW1A020ZP 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 ID = -1A 300 ID = -2A 200 0.5 1 10000 CAPACITANCE : C [pF] 4 3 2 Ta=25°C VDD = -6V ID = -2.0A RG= 10Ω Pulsed 2 3 4 5 6 4 6 8 10 0.01 0.1 7 Ta=25°C f=1MHz VGS=0V 1 10 DRAIN-CURRENT : -ID [A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 5 1 2 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 0 tr 1 0 SOURCE-DRAIN VOLTAGE : -VSD [V] 0 10 td(on) 1.5 1 tf 100 100 0 0 Ta=25°C VDD = -6V VGS=-4.5V R G=10Ω Pulsed td(off) 400 0.01 GATE-SOURCE VOLTAGE : -VGS [V] 1000 Ta=25°C Pulsed SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] REVERSE DRAIN CURRENT : -Is [A] 10 500 Fig.12 Switching Characteristics Ciss 1000 Coss 100 Crss 10 0.01 8 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] TOTAL GATE CHARGE : Qg [nC] Fig.14 Typical Capacitance vs. Drain-Source Voltage Fig.13 Dynamic Input Characteristics zMeasurement circuit Pulse Width VGS ID VGS VDS 10% 50% 90% RL D.U.T. 10% VDD RG 50% VDS 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG ID VGS VDS Qg RL VGS D.U.T. IG(Const) RG Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.05 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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