ROHM RB550SS-30

Data Sheet
Schottky Barrier Diode
RB550SS-30
Applications
Small current rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
KMD2
0.6±0.03
0.4±0.05
0～0.03
0.8±0.05
Construction
Silicon epitaxial planer
1.2±0.05
1.6±0.05
Features
1)Small mold type (KMD2)
2)High reliability
3)Low IR
1.2
0.5
0.8
0.7±0.05
Structure
ROHM : KMD2
JEDEC :JEITA : dot (year week factory)
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz･1cyc.)
IFSM
Junction temperature
Storage temperature
Tj
Tstg
(*1) On the Glass epoxy board , 180°Half Sine wave
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward Voltage
Reverse Current
IR
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© 2011 ROHM Co., Ltd. All rights reserved.
Min.
-
Limits
Unit
30
30
0.5
V
V
A
5
A
150
40 to 150
C
C
Typ.
0.53
1.00
1/4
Max.
0.59
8.00
Unit
V
μA
Conditions
IF=0.5A
VR=15V
2011.12 - Rev.A
Data Sheet
RB550SS-30
1
10000
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
Tj=150°C
Tj=125°C
0.1
Tj=150°C
Tj=25°C
1000
100
Tj=125°C
10
Tj=75°C
1
Tj=75°C
Tj=25°C
0.01
0.1
0
200
400
600
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
5
10
15
20
100
30
600
f=1MHz
IF=0.5A
FORWARD VOLTAGE:VF(mV)
580
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
25
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
Tj=25°C
560
540
520
500
480
AVE:503.7mV
460
440
1
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
80
10000
1000
AVE:561.5nA
f=1MHz
VR=0V
Tj=25°C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
VR=15V
Tj=25°C
70
AVE:59.6pF
60
50
40
100
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.12 - Rev.A
Data Sheet
RB550SS-30
30
20
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IF=0.1A
IR=0.1A
Irr=0.10×IR
1cyc
IFSM
25
8.3ms
20
15
10
AVE:13.8A
5
0
Tj=25°C
15
10
AVE:5.4ns
5
0
trr DISPERSION MAP
IFSM DISPERSION MAP
100
100
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
1cyc.
10
IFSM
time
10
1
1
1
10
1
100
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
0.5
Rth(j-a)
100
Rth(j-c)
10
0.4
REVERSE POWER
DISSIPATION:PR (W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
D.C.
D=1/2
Sin(θ＝180)
0.3
0.2
0.1
1
0.001
0
0.01
0.1
1
10
100
0
1000
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© 2011 ROHM Co., Ltd. All rights reserved.
0.2
0.4
0.6
0.8
1
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
3/4
2011.12 - Rev.A
Io
0A
0V
0.9
VR
t
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D.C.
0.8
T
D=t/T
VR=15V
Tj=150°C
0.7
D=1/2
0.5
Sin(θ＝180)
0.4
0.3
Io
0A
0V
1
VR
t
0.9
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
1
0.6
Data Sheet
RB550SS-30
D=t/T
VR=15V
Tj=150°C
0.8
0.7
D=1/2
0.6
0.5
Sin(θ＝180)
0.4
0.3
0.2
0.2
0.1
0.1
0
T
0
0
50
100
150
0
50
100
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
30
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
AVE：17.7kV
20
15
10
5
AVE：1.59kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.12 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A