RTF020P02 Transistors 2.5V Drive Pch MOSFET RTF020P02 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low on-resistance. (120mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Gate (2) Source Abbreviated symbol : WM (3) Drain zApplications DC-DC converter zPackaging specifications zEquivalent circuit Package Type Taping (3) TL Code Basic ordering unit (pieces) 3000 RTF020P02 ∗2 (1) ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ∗1 ISP PD ∗2 Tch Tstg Limits −20 ±12 ±2.0 ±8 −0.6 −8 0.8 150 −55 to +150 Symbol Limits Unit 156 °C / W Unit V V A A A A W °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient Rth(ch-a) ∗ ∗ Mounted on a ceramic board. Rev.C 1/4 RTF020P02 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS −20 IDSS Zero gate voltage drain current − Gate threshold voltage VGS (th) −0.7 − ∗ Static drain-source on-state RDS (on) − resistance − Yfs ∗ 2.0 Forward transfer admittance Ciss − Input capacitance Coss − Output capacitance Crss − Reverse transfer capacitance td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time Qg ∗ − Total gate charge Qgs ∗ − Gate-source charge Qgd ∗ − Gate-drain charge Typ. Max. − − − − 60 65 120 − 640 110 85 12 15 40 12 7.0 1.6 2.0 ±10 − −1 −2.0 85 90 165 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −2A, VGS= −4.5V ID= −2A, VGS= −4V ID= −1A, VGS= −2.5V VDS= −10V, ID= −1A VDS= −10V VGS=0V f=1MHz ID= −1A VDD −15V VGS= −4.5V RL=15Ω RG=10Ω VDD −15V RL=7.5Ω VGS= −4.5V RG=10Ω ID= −2A ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. Unit VSD − − −1.2 V Conditions IS= −0.6A, VGS=0V Rev.C 2/4 RTF020P02 Transistors Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 Ta=25°C Pulsed VGS= −2.5V VGS= −4.0V VGS= −4.5V 100 10 0.1 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS= −4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 1 10 0.1 Ciss Coss Crss 10 10 VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.1 0.01 0.0 100 10000 Ta=25°C VDD= −15V VGS= −4.5A RG=10Ω Pulsed 1000 tf td (off) 100 td (on) 10 tr 1 0.01 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 1 1 10 Fig.3 Static Drain-Source On-State Resistance vs. Drain Current DRAIN CURRENT : −ID (A) Ta=25°C f=1MHz VGS=0V 0.1 1 10 VGS= −2.5V Pulsed 100 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 10 0.01 10 0.1 DRAIN CURRENT : −ID (A) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 100 100 10 1000 DRAIN CURRENT : −ID (A) 10000 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C Fig.2 Static Drain-Source On-State Resistance vs. Drain Current Fig.1 Typical Transfer Characteristics 10 0.1 VGS= −4.5V Pulsed DRAIN CURRENT : −ID (A) GATE-SOURCE VOLTAGE : −VGS (V) 1000 1000 REVERSE DRAIN CURRENT : −IS (A) 1 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VDS= −10V Pulsed 10 Fig.6 Reverse Drain Current vs. Source-Drain Voltage 8 GATE-SOURCE VOLTAGE : −VGS (V) DRAIN CURRENT : −ID (A) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) zElectrical characteristic curves Ta=25°C VDD= −15V ID= −2A RG=10Ω Pulsed 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.7 Typical Capacitance vs. Drain-Source Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics Rev.C 3/4 RTF020P02 Transistors zMeasurement circuits Pulse Width VGS ID VDS VGS 10% 50% 90% 50% RL 10% D.U.T. 10% RG VDD VDS 90% td(on) 90% td(off) tr ton Fig.10 Switching Time Measurement Circuit tf toff Fig.11 Switching Waveforms VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.12 Gate Charge Measurement Circuit Fig.13 Gate Charge Waveforms Rev.C 4/4 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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