2.5V Drive Nch+Nch MOSFET US6K1 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space savingsmall surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). zApplications Switching Abbreviated symbol : K01 zPackaging specifications Package Type zInner circuit Taping (6) (5) (4) TR Code Basic ordering unit (pieces) 3000 ∗1 US6K1 ∗2 ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Total power dissipation ∗2 Tch Tstg Channel temperature Range of storage temperature Limits 30 12 ±1.5 ±6 0.6 6 1.0 0.7 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C Limits 125 179 Unit °C/W / TOTAL °C/W / ELEMENT ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ ∗ Mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2009.03 - Rev.B Data Sheet US6K1 zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Parameter − 30 − 0.5 − − − 1.5 − − − − − − − − − − − − − − 170 180 240 − 80 13 12 7 9 15 6 1.6 0.5 0.3 10 − 1 1.5 240 250 340 − − − − − − − − 2.2 − − Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 4.0V ID= 1.5A, VGS= 2.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.75A VGS= 4.5V RL= 20Ω RG =10Ω VDD 15V VGS= 4.5V ID= 1.5A ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. VSD − − 1.2 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Unit V Conditions IS= 0.6A, VGS=0V 2/3 2009.03 - Rev.B Data Sheet US6K1 zElectrical characteristics curves 6 tf 100 td(off) td(on) tr 1 0.01 3 2 1 10 25°C −25°C 0.1 0.01 0 1 0.5 1.5 0.001 0.0 2 0.5 1.0 1.5 2.0 2.5 Fig.1 Switching Characteristics Fig.2 Dynamic Input Characteristics Fig.3 Typical Transfer Characteristics 10 Ta=25°C Pulsed SOURCE CURRENT : IS (A) 0.6 0.5 0.4 0.3 0.2 10 VGS=0V Pulsed Ta=125°C 75°C 1 25°C −25°C 0.1 0.1 2 3 4 5 6 7 8 9 10 0.01 0.0 0.5 75°C 25°C −25°C 10 DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) Ta=125°C 1 75°C 25°C −25°C 0.1 0.01 1.5 0.1 1 VGS=2.5V Pulsed Ta=125°C 25°C −25°C 0.1 1 DRAIN CURRENT : ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) 3/3 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 75°C 0.1 0.01 1 DRAIN CURRENT : ID (A) Fig.5 Source Current vs. Source-Drain Voltage VGS=4.0V Pulsed 0.1 Ta=125°C 1 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Static Drain-Source On-State Resistance vs. Gate source Voltage 10 1.0 VGS=4.5V Pulsed 10 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 1 GATE-SOURCE VOLTAGE : VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 75°C GATE-SOURCE VOLTAGE : VGS (V) 0.7 0.1 0.01 Ta=125°C TOTAL GATE CHARGE : Qg (nC) 0.8 1 1 DRAIN CURRENT : ID (A) 0.9 0.0 0 VDS=10V Pulsed 1 0 0.1 1.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (mΩ) 4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 10 10 Ta=25°C VDD=15V I 5 D=1.5A RG=10Ω Pulsed DRAIN CURRENT : ID (A) Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS (V) SWITCHING TIME : t (ns) 1000 Ta=25°C Pulsed 1 VGS=2.5V VGS=4V VGS=4.5V 0.1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 2009.03 - Rev.B Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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