QS8J1 Transistors 1.5V Drive Pch+Pch MOSFET QS8J1 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) zFeatures 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) zApplications Switching Abbreviated symbol : J01 zPackaging specifications zInner circuit Package Type Each lead has same dimensions Taping (8) (7) (6) (5) TR Code Basic ordering unit (pieces) 3000 QS8J1 ∗2 ∗2 ∗1 (1) zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for Tr1 and Tr2.> Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature ∗1 (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Limits −12 ±10 ±4.5 ±18 −1 −18 1.5 1.25 Unit V V A A A A W / TOTAL W / ELEMENT Tch Tstg 150 −55 to +150 °C °C Symbol Limits Unit Rth(ch-a) ∗ 83.3 100 °C/W / TOTAL °C/W / ELEMENT PD ∗2 (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board. 1/5 QS8J1 Transistors zElectrical characteristics (Ta=25°C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −12 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.3 − Static drain-source on-state − ∗ RDS (on) resistance − − Forward transfer admittance Yfs ∗ 6.5 Input capacitance − Ciss Output capacitance − Coss Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ Typ. Max. − − − − 21 27 36 49 − 2450 320 290 12 75 390 215 31 4.5 4.0 ±10 − −1 −1.0 29 38 54 98 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −4.5A, VGS= −4.5V ID= −2.2A, VGS= −2.5V ID= −2.2A, VGS= −1.8V ID= −0.9A, VGS= −1.5V VDS= −6V, ID= −4.5A VDS= −6V VGS=0V f=1MHz VDD −6V VGS= −4.5V ID= −2.2A RL 2.7Ω RG=10Ω VDD −6V VGS= −4.5V ID= −4.5A RL 1.3Ω / RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. Unit VSD ∗ − − −1.2 V Conditions IS= −4.5A, VGS=0V ∗ Pulsed 2/5 QS8J1 Transistors zElectrical characteristic curves 8 6 Ta=25℃ Pulsed DRAIN CURRENT -ID[A] VGS=-1.5V VGS=-1.4V 4 VGS=-1.3V 2 VGS=-1.2V 0 VGS=-10V VGS=-1.6V VGS=-1.5V 8 10 Ta=25℃ Pulsed VGS=-1.4V 6 VGS=-1.3V 4 VGS=-1.2V 2 VGS=-1.1V 0 0.2 0.4 0.6 0.8 1.0 0 DRAIN-SOURCE VOLTAGE -VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE :RDS(on) [mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE:RDS(on) [mΩ] Ta=25℃ Pulsed VGS=-1.5V VGS=-1.8V VGS=-2.5V VGS=-4.5V 10 1 Ta= 25℃ Ta= -25℃ 10 0.1 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE:RDS(on) [mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE:RDS(on) [mΩ] Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 10 0.1 1 Ta= 75℃ Ta= 25℃ Ta= -25℃ 100 10 10 0.1 10 DRAIN CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Ta=125℃ Ta= 25℃ Ta= -25℃ 10 0.1 1 1 10 DRAIN CURRENT : -ID [A] Ta= 75℃ 100 2.0 Ta=125℃ Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) VGS= -1.5V Pulsed 1.5 VGS= -2.5V Pulsed DRAIN CURRENT : -ID [A] 1000 1.0 Fig.3 Typical Transfer Characteristics 1000 100 0.5 GATE-SOURCE VOLTAGE :- VGS [V] Ta= 75℃ Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 100 0.001 0.0 10 Ta=125℃ 10 VGS= -1.8V Pulsed 8 VGS= -4.5V Pulsed DRAIN CURRENT : -ID [A] 1000 6 Fig.2 Typical Output Characteristics(Ⅱ) 1000 1000 0.1 4 0.01 DRAIN-SOURCE VOLTAGE -VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 100 2 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE:RDS(on) [mΩ] 0.0 VDS= -6V Pulsed Ta=125℃ 75℃ 25℃ -25℃ 1 REVERSE DRAIN CURRENT CURRENT :- IDR [A] DRAIN CURRENT -ID[A] VGS=-10V VGS=-4.5V VGS=-2.5V VGS=-1.8V DRAIN CURRENT : -ID [A] 10 10 10 DRAIN CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 100 VGS=0V Pulsed 10 1 Ta=125℃ 75℃ 25℃ -25℃ 0.1 0.01 0.0 0.2 0.4 0.6 0.8 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 3/5 1.0 QS8J1 Ta=25℃ Pulsed ID= -2.2A 60 40 20 0 2 4 VGS=-6V Pulsed 10 ID= -4.5A 0 6 8 Ta= -25℃ 1 Ta= 25℃ Ta= 75℃ Ta= 125℃ 0 0.1 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10.0 Ciss Coss Crss 3 2.5 Ta=25℃ VDD= -6V ID=-4.5A RG=10Ω Pulsed 2 1.5 1 0.5 tf 1000 0 5 10 15 20 25 30 td(off) 100 10 td(on) tr 1 100 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS [V] Fig.13 Typical Capacitance vs. Drain-Source Voltage 0 0 1 35 Fig.12 Dynamic Input Characteristics Ta=25℃ VDD= -6V VGS=-4.5V RG=10Ω Pulsed 10000 Ta=25℃ f=1MHz VGS=0V 4 3.5 TOTAL GATE CHARGE : Qg [nC] Fig.11 Forward Transfer Admittance vs. Drain Current SWITCHING TIME : t [ns] CAPACITANCE : C [pF] 1.0 DRAIN CURRENT : ID [A] 10000 4.5 0 0 0.0 10 GATE-SURCE VOLTAGE : -VGS [V] 1000 GATE-SOURCE VOLTAGE : -VGS [V] 100 80 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE RDS(on) [mΩ] Transistors 10 DRAIN CURRENT : -ID [A] Fig.14 Switching Characteristics 4/5 QS8J1 Transistors zMeasurement circuits Pulse width ID VDS VGS VGS 10% 50% 90% RL D.U.T. 10% VDD RG 50% VDS 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit 10% tf toff Fig.1-2 Switching Time Waveforms VG ID VDS VGS RL D.U.T. IG(Const.) RG Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 5/5 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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