4V Drive Nch+SBD MOSFET ES6U3 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET / Schottky barrier diode WEMT6 zFeatures 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Built-in Low VF schottky barrier diode. (6) (5) (4) (1) (2) (3) Abbriviated symbol : U03 zInner circuit zApplications Switching (6) (4) (5) zPackage specifications Package Type ∗2 Taping Code T2R Basic ordering unit (pieces) 8000 ∗1 ES6U3 (1) ∗1 ESD protection diode ∗2 Body diode (2) (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Limits 30 ±20 Channel temperature Tch 150 °C Power dissipation PD 0.7 W / ELEMENT Limits 25 20 0.5 Unit V V A Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) ∗2 Unit V V A A A A ±1.4 ±2.8 0.5 2.8 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board <Di> Parameter Repetitive peak reverse voltage Reverse voltage Forward current Symbol VRM VR IF IFSM Forward current surge peak Junction temperature Power dissipation Tj PD ∗1 2.0 A ∗2 150 0.5 °C W / ELEMENT ∗1 60Hz 1cyc. ∗2 Mounted on a ceramic board <MOSFET and Di> Parameter Symbol Power dissipation Range of storage temperature PD ∗ Tstg Limits Unit 0.8 −55 to +150 W / TOTAL °C ∗ Mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.03 - Rev.A Data Sheet ES6U3 zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 30 − 1.0 − − − 1 − − − − − − − − − − Typ. Max. − − − − 170 250 270 − 70 15 12 6 6 13 8 1.4 0.6 0.3 ±10 − 1 2.5 240 350 380 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.4A, VGS= 10V ID= 1.4A, VGS= 4.5V ID= 1.4A, VGS= 4V VDS= 10V, ID= 1.4A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.7A VGS= 10V RL 21Ω RG= 10Ω VDD 15V, VGS= 5V ID= 1.4A, RL 11Ω RG= 10Ω ∗Pulsed <Body diode characteristics (Source-drain)> Parameter Symbol Min. Forward voltage Typ. Max. VSD ∗ − − 1.2 Unit V Conditions Symbol Min. Typ. Max. Unit − − 0.36 V − − 0.52 V IF= 0.5A − − 100 µA VR= 20V IS= 1.4A, VGS=0V ∗Pulsed <Di> Parameter Forward voltage VF Reverse current IR www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Conditions IF= 0.1A 2/4 2009.03 - Rev.A Data Sheet ES6U3 zElectrical characteristics curves < MOSFET > 1000 100 Ciss Coss Crss 10 10 Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed tf 100 GATE SOURCE VOLTAGE : VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) td (off) 10 td (on) tr 0.1 1 10 100 1 0.01 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) DRAIN CURRENT : ID (A) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.01 0.001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 0.1 1 0 1 10 2 3 Fig.3 Dynamic Input Characteristics 10 800 700 ID=1.4A 600 500 ID=0.7A 400 300 200 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 100 0 0 2 4 6 8 10 0.01 0.0 10000 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 0.01 0.1 1 1.0 1.5 Fig.6 Source Current vs. Source-Drain Voltage VGS=4.5V Pulsed 1000 0.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS=10V Pulsed 10 0.01 1 GATE SOURCE VOLTAGE : VGS (V) Fig.4 Typical Transfer Characteristics 1000 2 TOTAL GATE CHARGE : Qg (nC) Ta=25°C 900 Pulsed GATE-SOURCE VOLTAGE : VGS (V) 10000 4 3 0 10 1000 VDS=10V Pulsed 0.1 5 Fig.2 Switching Characteristics Fig.1 Typical Capacitance vs. Drain-Source Voltage 1 6 DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) 10 1 SOURCE CURRENT : IS (A) 1 0.01 Ta=25°C 9 VDD=15V ID=1.4A 8 RG=10Ω Pulsed 7 10 10000 STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) CAPACITANCE : C (pF) 1000 VGS=4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1000 100 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) 1000 Ta=25°C Pulsed VGS=4V VGS=4.5V VGS=10V 100 0.1 1 10 DRAIN CURRENT : ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/4 2009.03 - Rev.A Data Sheet ES6U3 < Di > 100000 1 pulsed pulsed FORWARD CURRENT : IF (A) REVERSE CURRENT : IF ( µA) 10000 Ta = 75℃ 1000 Ta = 25℃ 100 10 Ta= - 25℃ 1 0.1 0.01 0.1 Ta = 75℃ Ta = 25℃ Ta= - 25℃ 0.01 0.001 0 5 10 15 20 25 0 REVERSE VOLTAGE : VR [V] Fig.1 Reverse Current vs. Reverse Voltage 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.2 Forward Current vs. Forward Voltage zMeasurement circuit Pulse Width ID VDS VGS RL 90% 50% 10% VGS 50% VDS D.U.T. 10% VDD RG 90% tr td(on) ton 10% 90% td(off) tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG ID VDS VGS Qg RL VGS D.U.T. IG(Const.) RG Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit FIg.2-2 Gate Charge Waveform zNotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.03 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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