DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces June 2002, version DS5492-4.0 FEATURES ■ 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5492-5.0 February 2003 KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) *(measured at the power busbars and not the auxiliary terminals) External connection APPLICATIONS ■ High Reliability Inverters ■ Motor Controllers ■ Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM1200ESM33-A000 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. 3300V 3.2V 1200A 2400A C1 C2 C3 E1 E2 E3 Aux C G Aux E External connection Fig. 1 Single switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM1200ESM33-A000 Note: When ordering, please use the whole part number. Outline type code: E (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 DIM1200ESM33-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 3300 V ±20 V Continuous collector current Tcase = 85˚C 1200 A IC(PK) Peak collector current 1ms, Tcase = 115˚C 2400 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 16.5 kW Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C 720 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 6000 V QPD Partial discharge - per module IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS 10 pC IC I2t 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200ESM33-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): AlN AlSiC 33mm 20mm 175 Symbol Parameter Rth(j-c) Thermal resistance - transistor (per switch) Test Conditions Continuous dissipation - Min. Typ. Max. Units - - 8 ˚C/kW - - 16 ˚C/kW - - 4 ˚C/kW junction to case Rth(j-c) Thermal resistance (IGBT switch) Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M4 - - 2 Nm Electrical connections - M8 - - 10 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 DIM1200ESM33-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 6 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 90 mA Gate leakage current VGE = ±20V, VCE = 0V - - 12 µA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat)† Collector-emitter saturation voltage VGE = 15V, IC = 1200A - 3.2 - V VGE = 15V, IC = 1200A, , Tcase = 125˚C - 4.0 - V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - 1200 - A IFM Diode maximum forward current tp = 1ms - 2400 - A VF† Diode forward voltage IF = 1200A - 2.5 - V IF = 1200A, Tcase = 125˚C - 2.5 - V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz - 270 - nF Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz - 4 - nF LM Module inductance - per arm - - 10 - nH Internal transistor resistance - per arm - - 0.09 - mΩ RINT SCData Short circuit. ISC Tj = 125˚C, VCC = 2500V, I1 - 7800 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 6600 - A IEC 60747-9 Note: † Measured at the power busbars and not the auxiliary terminals. L* is the circuit inductance + LM 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200ESM33-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 1200A - 1400 - ns Fall time VGE = ±15V - 250 - ns EOFF Turn-off energy loss VCE = 1800V - 1300 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 1.5Ω - 500 - ns L = 100nH - 300 - ns Cge = 220nF - 1600 - mJ - 14 - µC Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss Qg Gate charge Qrr Diode reverse recovery charge IF = 1200A, VR = 1800V, - 600 - µC Irr Diode reverse recovery current dIF/dt = 5600A/µs - 950 - A Erec Diode reverse recovery energy - 700 - mJ Min. Typ. Max. Units IC = 1200A - 1600 - ns Fall time VGE = ±15V - 300 - ns EOFF Turn-off energy loss VCE = 1800V - 1500 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 1.5Ω - 550 - ns L ~ 100nH - 300 - ns Cge = 220nF - 2300 - mJ Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss Qrr Diode reverse recovery charge IF = 1200A, VR = 1800V, - 900 - µC Irr Diode reverse recovery current dIF/dt = 5000A/µs - 1150 - A Erec Diode reverse recovery energy - 1100 - mJ Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/10 DIM1200ESM33-A000 TYPICAL CHARACTERISTICS 2400 2400 Common emitter Tcase = 25˚C Common emitter Tcase = 125˚C 2200 2200 V is measured at power busbars ce Vce is measured at power busbars and not the auxiliary terminals 2000 2000 1800 1800 Collector current, IC - (A) Collector current, IC - (A) and not the auxiliary terminals 1600 1400 1200 1000 800 600 1400 1200 1000 800 600 Vge = 10V Vge = 12V Vge = 15V Vge = 20V 400 200 0 0 1600 1 2 3 4 Collector-emitter voltage, Vce - (V) 5 Vge = 10V Vge = 12V Vge = 15V Vge = 20V 400 200 0 6 0 1 2 3 4 5 6 7 8 Collector-emitter voltage, Vce - (V) Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics 2500 4000 Conditions: Tc = 125°C, Rg = 1.5 Ohms, Vcc = 1800V, 2000 Cge = 220nF Conditions: Tc = 125°C IC = 1200A Vcc = 1800V Cge = 220nF Switching energy, Esw - (mJ) Switching energy, Esw - (mJ) 3000 1500 1000 2000 1000 500 Eon (mJ) Eoff (mJ) Erec (mJ) 0 0 200 400 600 800 Collector current, IC - (A) 1000 1200 Fig. 5 Typical switching energy vs collector current 6/10 Eon (mJ) Eoff (mJ) Erec (mJ) 0 1.0 1.5 2.0 2.5 3.0 Gate resistance, Rg - (ohms) 3.5 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200ESM33-A000 2400 2600 Tj = 25˚C Tj = 125˚C 2200 2400 VF is measured at power busbars and not the auxiliary terminals 2000 2200 2000 1800 1800 Collector current, IC - (A) 1600 Forward current, IF - (A) Chip 1600 1400 Module 1400 1200 1200 1000 1000 800 800 600 600 400 400 200 0 0.5 1 1.5 2 2.5 3 3.5 4 Forward voltage, VF - (V) Tcase = 125˚C 200 Vge = ±15V Rg(min) = 1.5 0 0 500 1000 1500 2000 2500 3000 Collector emitter voltage, Vce - (V) Fig. 7 Diode typical forward characteristics 3500 Fig. 8 Reverse bias safe operating area 2000 100 Transient thermal impedance, Zth (j-c) - (°C/kW ) 1800 Reverse recovery current, Irr - (A) 1600 1400 1200 1000 800 600 400 Diode 10 Transistor 1 IGBT 200 0 0 Diode 500 1000 1500 2000 2500 Reverse voltage, VR - (V) 3000 Fig. 9 Diode reverse bias safe operating area 3500 0.1 0.001 Ri (˚C/KW) τi (ms) Ri (˚C/KW) τi (ms) 0.01 1 0.30 0.13 0.60 0.13 0.1 Pulse width, tp - (s) 3 2.63 48.03 5.26 48.03 1 4 3.19 248.53 6.37 248.53 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 2 1.88 5.80 3.75 5.80 7/10 DIM1200ESM33-A000 2500 DC collector current, IC - (A) 2000 1500 1000 500 0 0 20 40 60 80 100 120 140 Case temperature, Tcase - (˚C) Fig. 11 DC current rating vs case temperature 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200ESM33-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1700g Module outline type code: E Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. 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