ETC DIM1200ESM33-A

DIM1200ESM33-A000
DIM1200ESM33-A000
Single Switch IGBT Module
Replaces June 2002, version DS5492-4.0
FEATURES
■
10µs Short Circuit Withstand
■
High Thermal Cycling Capability
■
Non Punch Through Silicon
■
Isolated MMC Base with AlN Substrates
DS5492-5.0 February 2003
KEY PARAMETERS
VCES
VCE(sat) *
IC
IC(PK)
(typ)
(max)
(max)
*(measured at the power busbars and not the auxiliary terminals)
External connection
APPLICATIONS
■
High Reliability Inverters
■
Motor Controllers
■
Traction Drives
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM1200ESM33-A000 is a single switch 3300V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
3300V
3.2V
1200A
2400A
C1
C2
C3
E1
E2
E3
Aux C
G
Aux E
External connection
Fig. 1 Single switch circuit diagram
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1200ESM33-A000
Note: When ordering, please use the whole part number.
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/10
DIM1200ESM33-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
3300
V
±20
V
Continuous collector current
Tcase = 85˚C
1200
A
IC(PK)
Peak collector current
1ms, Tcase = 115˚C
2400
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
16.5
kW
Diode I2t value
VR = 0, tp = 10ms, Tvj = 125˚C
720
kA2s
Visol
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
6000
V
QPD
Partial discharge - per module
IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS
10
pC
IC
I2t
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200ESM33-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
AlN
AlSiC
33mm
20mm
175
Symbol
Parameter
Rth(j-c)
Thermal resistance - transistor (per switch)
Test Conditions
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
8
˚C/kW
-
-
16
˚C/kW
-
-
4
˚C/kW
junction to case
Rth(j-c)
Thermal resistance (IGBT switch)
Continuous dissipation junction to case
Rth(c-h)
Tj
Tstg
-
Thermal resistance - case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
Transistor
-
-
150
˚C
Diode
-
-
125
˚C
–40
-
125
˚C
Mounting - M6
-
-
5
Nm
Electrical connections - M4
-
-
2
Nm
Electrical connections - M8
-
-
10
Nm
-
Storage temperature range
Screw torque
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/10
DIM1200ESM33-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
6
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
90
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
12
µA
VGE(TH)
Gate threshold voltage
IC = 120mA, VGE = VCE
4.5
5.5
6.5
V
VCE(sat)†
Collector-emitter saturation voltage
VGE = 15V, IC = 1200A
-
3.2
-
V
VGE = 15V, IC = 1200A, , Tcase = 125˚C
-
4.0
-
V
Symbol
ICES
IGES
Parameter
Collector cut-off current
Test Conditions
IF
Diode forward current
DC
-
1200
-
A
IFM
Diode maximum forward current
tp = 1ms
-
2400
-
A
VF†
Diode forward voltage
IF = 1200A
-
2.5
-
V
IF = 1200A, Tcase = 125˚C
-
2.5
-
V
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
270
-
nF
Cres
Reverse transfer capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
4
-
nF
LM
Module inductance - per arm
-
-
10
-
nH
Internal transistor resistance - per arm
-
-
0.09
-
mΩ
RINT
SCData
Short circuit. ISC
Tj = 125˚C, VCC = 2500V,
I1
-
7800
-
A
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt
I2
-
6600
-
A
IEC 60747-9
Note:
†
Measured at the power busbars and not the auxiliary terminals.
L* is the circuit inductance + LM
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200ESM33-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 1200A
-
1400
-
ns
Fall time
VGE = ±15V
-
250
-
ns
EOFF
Turn-off energy loss
VCE = 1800V
-
1300
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 1.5Ω
-
500
-
ns
L = 100nH
-
300
-
ns
Cge = 220nF
-
1600
-
mJ
-
14
-
µC
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
Test Conditions
EON
Turn-on energy loss
Qg
Gate charge
Qrr
Diode reverse recovery charge
IF = 1200A, VR = 1800V,
-
600
-
µC
Irr
Diode reverse recovery current
dIF/dt = 5600A/µs
-
950
-
A
Erec
Diode reverse recovery energy
-
700
-
mJ
Min.
Typ.
Max.
Units
IC = 1200A
-
1600
-
ns
Fall time
VGE = ±15V
-
300
-
ns
EOFF
Turn-off energy loss
VCE = 1800V
-
1500
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 1.5Ω
-
550
-
ns
L ~ 100nH
-
300
-
ns
Cge = 220nF
-
2300
-
mJ
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
Test Conditions
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
IF = 1200A, VR = 1800V,
-
900
-
µC
Irr
Diode reverse recovery current
dIF/dt = 5000A/µs
-
1150
-
A
Erec
Diode reverse recovery energy
-
1100
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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5/10
DIM1200ESM33-A000
TYPICAL CHARACTERISTICS
2400
2400
Common emitter
Tcase = 25˚C
Common emitter
Tcase = 125˚C
2200
2200 V is measured at power busbars
ce
Vce is measured at power busbars
and not the auxiliary terminals
2000
2000
1800
1800
Collector current, IC - (A)
Collector current, IC - (A)
and not the auxiliary terminals
1600
1400
1200
1000
800
600
1400
1200
1000
800
600
Vge = 10V
Vge = 12V
Vge = 15V
Vge = 20V
400
200
0
0
1600
1
2
3
4
Collector-emitter voltage, Vce - (V)
5
Vge = 10V
Vge = 12V
Vge = 15V
Vge = 20V
400
200
0
6
0
1
2
3
4
5
6
7
8
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
2500
4000
Conditions:
Tc = 125°C,
Rg = 1.5 Ohms,
Vcc = 1800V,
2000 Cge = 220nF
Conditions:
Tc = 125°C
IC = 1200A
Vcc = 1800V
Cge = 220nF
Switching energy, Esw - (mJ)
Switching energy, Esw - (mJ)
3000
1500
1000
2000
1000
500
Eon (mJ)
Eoff (mJ)
Erec (mJ)
0
0
200
400
600
800
Collector current, IC - (A)
1000
1200
Fig. 5 Typical switching energy vs collector current
6/10
Eon (mJ)
Eoff (mJ)
Erec (mJ)
0
1.0
1.5
2.0
2.5
3.0
Gate resistance, Rg - (ohms)
3.5
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200ESM33-A000
2400
2600
Tj = 25˚C
Tj = 125˚C
2200
2400
VF is measured at power busbars
and not the auxiliary terminals
2000
2200
2000
1800
1800
Collector current, IC - (A)
1600
Forward current, IF - (A)
Chip
1600
1400
Module
1400
1200
1200
1000
1000
800
800
600
600
400
400
200
0
0.5
1
1.5
2
2.5
3
3.5
4
Forward voltage, VF - (V)
Tcase = 125˚C
200 Vge = ±15V
Rg(min) = 1.5
0
0
500
1000
1500
2000
2500
3000
Collector emitter voltage, Vce - (V)
Fig. 7 Diode typical forward characteristics
3500
Fig. 8 Reverse bias safe operating area
2000
100
Transient thermal impedance, Zth (j-c) - (°C/kW )
1800
Reverse recovery current, Irr - (A)
1600
1400
1200
1000
800
600
400
Diode
10
Transistor
1
IGBT
200
0
0
Diode
500
1000
1500
2000
2500
Reverse voltage, VR - (V)
3000
Fig. 9 Diode reverse bias safe operating area
3500
0.1
0.001
Ri (˚C/KW)
τi (ms)
Ri (˚C/KW)
τi (ms)
0.01
1
0.30
0.13
0.60
0.13
0.1
Pulse width, tp - (s)
3
2.63
48.03
5.26
48.03
1
4
3.19
248.53
6.37
248.53
10
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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2
1.88
5.80
3.75
5.80
7/10
DIM1200ESM33-A000
2500
DC collector current, IC - (A)
2000
1500
1000
500
0
0
20
40
60
80
100
120
140
Case temperature, Tcase - (˚C)
Fig. 11 DC current rating vs case temperature
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200ESM33-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1700g
Module outline type code: E
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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9/10
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
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Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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