ROHM RSR030N06

RSR030N06
Nch 60V 3A Power MOSFET
Datasheet
lOutline
VDSS
60V
RDS(on) (Max.)
85mW
ID
3A
PD
1W
lFeatures
TSMT3
(3)
(1)
(2)
lInner circuit
1) Low on - resistance.
(1) Gate
(2) Source
(3) Drain
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
4) Pb-free lead plating ; RoHS compliant
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Taping
Reel size (mm)
lApplication
DC/DC converters
Type
180
Tape width (mm)
Basic ordering unit (pcs)
8
3,000
Taping code
TL
Marking
PY
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
60
V
Continuous drain current
ID *1
3
A
ID,pulse *2
12
A
VGSS
20
V
PD *3
1.0
W
PD *4
0.54
W
Tj
150
°C
Tstg
-55 to +150
°C
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
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© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.06 - Rev.B
Data Sheet
RSR030N06
lThermal resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal resistance, junction - ambient
RthJA *3
-
-
125
°C/W
Thermal resistance, junction - ambient
RthJA *4
-
-
231
°C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Symbol
V(BR)DSS
Conditions
VGS = 0V, ID = 1mA
ΔV(BR)DSS ID = 1mA
ΔTj
referenced to 25°C
Values
Unit
Min.
Typ.
Max.
60
-
-
V
-
67
-
mV/°C
Zero gate voltage drain current
IDSS
VDS = 60V, VGS = 0V
-
-
1
mA
Gate - Source leakage current
IGSS
VGS = 20V, VDS = 0V
-
-
10
mA
Gate threshold voltage
VGS (th)
VDS = 10V, ID = 1mA
1.0
-
2.5
V
Gate threshold voltage
temperature coefficient
ΔV(GS)th
ΔTj
ID = 1mA
referenced to 25°C
-
-4.4
-
mV/°C
VGS=10V, ID=3A
-
60
85
VGS=4.5V, ID=3A
-
70
100
VGS=4.0V, ID=3A
-
75
105
VGS=10V, ID=3A, Tj=125°C
-
110
154
f = 1MHz, open drain
-
5
-
W
2.1
5.5
-
S
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
RDS(on)
RG
gfs *5
*5
VDS = 10V, ID = 9A
mW
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4(12×20×0.8mm)
*5 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.06 - Rev.B
Data Sheet
RSR030N06
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
380
-
Output capacitance
Coss
VDS = 10V
-
95
-
Reverse transfer capacitance
Crss
f = 1MHz
-
45
-
VDD ⋍ 30V, VGS = 10V
-
8
-
tr *5
ID = 1.5A
-
12
-
td(off) *5
RL = 20W
-
30
-
tf *5
RG = 10W
-
10
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *5
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Total gate charge
Symbol
Qg *5
Gate - Source charge
Qgs *5
Gate - Drain charge
Qgd *5
Conditions
Values
Min.
Typ.
Max.
VDD ⋍ 30V, ID = 3A
VGS = 5V
-
5.0
-
VDD ⋍ 30V, ID = 3A
VGS = 10V
-
9.0
18
-
1.6
-
-
1.4
-
VDD ⋍ 30V, ID = 3A
VGS = 5V
Unit
nC
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Inverse diode continuous,
forward current
Forward voltage
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Symbol
IS *1
VSD *5
Conditions
Values
Unit
Min.
Typ.
Max.
Ta = 25°C
-
-
0.8
A
VGS = 0V, Is = 3A
-
-
1.2
V
3/11
2012.06 - Rev.B
Data Sheet
RSR030N06
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
Operation in this area
is limited by RDS(on)
(VGS = 10V )
100
80
60
40
20
0
0
50
100
150
PW = 10ms
DC Operation
0.1
0.01
200
PW = 1ms
1
Ta=25°C
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.1
1
10
100
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maxmum Power dissipation
10
1000
Ta=25°C
Single Pulse
1
top
D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signlep
0.1
0.01
0.001
0.0001
Rth(ch-a)=125°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
0.01
1
Peak Transient Power : P(W)
Normalized Transient Thermal Resistance : r(t)
PW = 100μs
10
Drain Current : ID [A]
Power Dissipation : PD/PD max. [%]
120
100
10
1
0.1
0.0001
100
0.01
1
100
Pulse Width : PW [s]
Pulse Width : PW [s]
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Ta=25°C
Single Pulse
4/11
2012.06 - Rev.B
Data Sheet
RSR030N06
lElectrical characteristic curves
Fig.6 Typical Output Characteristics(II)
Fig.5 Typical Output Characteristics(I)
6
6
Ta=25°C
Pulsed
5
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 2.8V
4
Drain Current : ID [A]
Drain Current : ID [A]
5
3
VGS= 2.5V
2
1
0
VGS= 2.2V
0
0.2
0.4
0.6
0.8
Drain - Source Voltage : VDS [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
4
3
VGS= 2.5V
2
VGS= 2.2V
1
0
1
Ta=25°C
Pulsed
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 2.8V
0
2
4
6
8
10
Drain - Source Voltage : VDS [V]
5/11
2012.06 - Rev.B
Data Sheet
RSR030N06
Fig.7 Breakdown Voltage
vs. Junction Temperature
Fig.8 Typical Transfer Characteristics
10
100
VDS=0V
ID=1mA
pulsed
80
Drain Current : ID [A]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
lElectrical characteristic curves
60
40
20
0
-50
0
50
100
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
0.1
Ta= -25°C
0.01
0.001
150
VDS= 10V
Pulsed
0
0.5
Junction Temperature : Tj [°C]
3
VDS= 10V
Pulsed
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
2.5
10
VDS=10V
ID=1mA
pulsed
1
-50
2
Fig.10 Transconductance vs. Drain Current
2
0
1.5
Gate - Source Voltage : VGS [V]
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
3
1
0
50
100
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
150
Junction Temperature : Tj [°C]
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© 2012 ROHM Co., Ltd. All rights reserved.
1
0.1
1
10
Drain Current : ID [A]
6/11
2012.06 - Rev.B
Data Sheet
RSR030N06
Fig.11 Drain CurrentDerating Curve
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
1.2
250
Static Drain - Source On-State Resistance
: RDS(on) [mΩ]
Drain Current Dissipation
: ID/ID max. (%)
lElectrical characteristic curves
1
0.8
0.6
0.4
0.2
0
-25
0
25
50
75
100
125
150
ID= 1.5A
150
100
50
0
VGS= 4.0V
VGS= 4.5V
VGS= 10V
100
.
0.1
1
10
Drain Current : ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
5
10
15
20
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
1000
0.01
0
Gate - Source Voltage : VGS [V]
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
10
ID= 3.0A
200
Junction Temperature : Tj [ºC]
Ta= 25°C
Pulsed
Ta=25°C
Pulsed
120
90
60
30
0
VGS=10V
ID=3A
pulsed
-50 -25
0
25
50
75
100 125 150
Junction Temperature : Tj [ºC]
7/11
2012.06 - Rev.B
Data Sheet
RSR030N06
lElectrical characteristic curves
Fig.15 Static Drain-Source On-State
Resistance vs. Drain Current(II)
VGS= 10V
Pulsed
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
1000
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
10
0.01
0.1
1
10
Drain Current : ID [A]
1000
VGS= 4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
10
0.01
0.1
1
10
Drain Current : ID [A]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: RDS(on) [mW]
1000
VGS= 4.0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
10
0.01
0.1
1
10
Drain Current : ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
8/11
2012.06 - Rev.B
Data Sheet
RSR030N06
lElectrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Fig.19 Switching Characteristics
1000
1000
Switching Time : t [ns]
Capacitance : C [pF]
100
Crss
10
Ta=25°C
f=1MHz
VGS=0V
0.01
tf
100
10
Coss
0.1
1
10
1
100
td(on)
0.01
0.1
tr
1
10
Drain - Source Voltage : VDS [V]
Drain Current : ID [A]
Fig.20 Dynamic Input Characteristics
Fig.21 Source Current
vs. Source Drain Voltage
10
10
VGS=0V
Pulsed
8
Source Current : IS [A]
Gate - Source Voltage : VGS [V]
Ta=25°C
VDD= 30V
VGS=10V
RG=10W
Pulsed
td(off)
Ciss
6
4
Ta=25°C
VDD= 30V
ID= 3.0A
RG=10W
Pulsed
2
0
0
2
4
6
8
Ta=125°C
Ta=75°C
Ta=25°C
0.1
0.01
10
Total Gate Charge : Qg [nC]
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© 2012 ROHM Co., Ltd. All rights reserved.
1
Ta= -25°C
0
0.5
1
1.5
Source-Drain Voltage : VSD [V]
9/11
2012.06 - Rev.B
Data Sheet
RSR030N06
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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© 2012 ROHM Co., Ltd. All rights reserved.
10/11
2012.06 - Rev.B
Data Sheet
RSR030N06
lDimensions (Unit : mm)
D
A
TSMT3
c
L1
Lp
HE
E
Q
e
b
x
S A
A3
e1
A
l1
A1
A2
e
S
b2
Patterm of terminal position areas
DIM
A
A1
A2
A3
b
c
D
E
e
HE
L1
Lp
Q
x
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
1.00
0.00
0.10
0.75
0.95
0.25
0.35
0.50
0.10
0.26
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.05
0.25
0.20
MILIMETERS
MIN
MAX
2.10
0.70
0.90
INCHES
MIN
0
0.03
MAX
0.039
0.004
0.037
0.01
0.014
0.004
0.11
0.059
0.02
0.01
0.118
0.071
0.04
0.102
0.012
0.016
0.002
-
0.118
0.024
0.028
0.01
0.008
INCHES
MIN
MAX
0.08
-
0.028
0.035
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
11/11
2012.06 - Rev.B
Notice
Notes
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A