UPC8233TK-A Datasheet

BIPOLAR ANALOG INTEGRATED CIRCUIT
PC8233TK
D
SiGe:C LOW NOISE AMPLIFIER
FOR GPS/MOBILE COMMUNICATIONS
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DESCRIPTION
The PC8233TK is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise
amplifier for GPS and mobile communications. This device exhibits low noise figure and high power gain
characteristics. This device is enabled in the frequency range from 1.5 to 2.4 GHz by modifying the external matching
circuit.
This device is suitable for the reduction in power consumption of the mobile communication system because it
operates by low voltage and low current.
The package is 6-pin lead-less minimold, suitable for surface mount.
FEATURES
• Supply voltage
• Low noise
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This IC is manufactured using our UHS4 (Ultra High Speed Process) SiGe:C bipolar process.
: VCC = 1.6 to 3.3 V (2.7 V TYP.)
: NF = 0.90 dB TYP. @ VCC = 2.7 V, fin = 1 575 MHz
NF = 0.90 dB TYP. @ VCC = 1.8 V, fin = 1 575 MHz
• High gain
: GP = 20 dB TYP. @ VCC = 2.7 V, fin = 1 575 MHz
GP = 19.5 dB TYP. @ VCC = 1.8 V, fin = 1 575 MHz
• Low current consumption
: ICC = 3.5 mA TYP. @ VCC = 2.7 V
• Built-in power-saving function
: VPSon = 1.0 V to VCC, VPSoff = 0.0 to 0.4 V
• High-density surface mounting
: 6-pin lead-less minimold package (1.5  1.1  0.55 mm)
• Included very robust bandgap regulator (Small VCC and TA dependence)
• Included protection circuits for ESD
APPLICATION
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• Low noise amplifier for GPS and mobile communications
ORDERING INFORMATION
Part Number
PC8233TK-E2
Order Number
PC8233TK-E2-A
Package
6-pin lead-less minimold
DI
(1511 PKG) (Pb-Free)
Marking
6P
Supplying Form
• 8 mm wide embossed taping
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: PC8233TK-A
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10706EJ01V0DS (1st edition)
Date Published February 2008 NS
PC8233TK
PIN CONNECTIONS
Pin Name
1
INPUT
2
GND
3
Power Save
4
OUTPUT
5
GND
6
VCC
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D
Pin No.
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INTERNAL BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Test Conditions
Ratings
Unit
VCC
TA = +25C
4.0
V
Power-Saving Voltage
VPS
TA = +25C
4.0
V
Power Dissipation
PD
TA = +85°C
232
mW
Note
SC
Supply Voltage
Symbol
Operating Ambient Temperature
TA
40 to +85
C
Storage Temperature
Tstg
55 to +150
C
Input Power
Pin
+10
dBm
Note Mounted on double-side copper-clad 50  50  1.6 mm epoxy glass PWB
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RECOMMENDED OPERATING RANGE
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Supply Voltage
VCC
1.6
2.7
3.3
V
Operating Ambient Temperature
TA
40
+25
+85
C
Power Save Turn-on Voltage
VPSon
1.0

VCC
V
Power Save Turn-off Voltage
VPSoff
0

0.4
V
2
Data Sheet PU10706EJ01V0DS
PC8233TK
ELECTRICAL CHARACTERISTICS
(T A = +25C, VCC = VPS = 2.7 V, fin = 1 575 MHz, unless otherwise specified)
Circuit Current
Symbol
ICC
Test Conditions
No Signal (VPS = 2.7 V)
At Power-Saving Mode (VPS = 0 V)
Pin = 35 dBm
MIN.
TYP.
MAX.
Unit
2.5
3.5
4.8
mA


1
A
GP
17.5
Noise Figure
NF

Input Return Loss
RLin
7
Output Return Loss
RLout
20.0
22.5
dB
0.9
1.2
dB
10

dB
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Power Gain
D
Parameter
10
16

dB
STANDARD CHARACTERISTICS FOR REFERENCE 1
(T A = +25C, VCC = VPS = 2.7 V, fin = 1 575 MHz, unless otherwise specified)
Parameter
Symbol
Test Conditions
Unit
8.5
dBm
Input 3rd Order Intercept Point
IIP3
Isolation
ISL
36
dB
Pin (1 dB)
23
dBm
Reference
Unit
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fin1 = 1 575 MHz, f in2 = 1 574 MHz
Reference
Gain 1 dB Compression Input Power
STANDARD CHARACTERISTICS FOR REFERENCE 2
(T A = +25C, VCC = VPS = 1.8 V, fin = 1 575 MHz, unless otherwise specified)
Parameter
Circuit Current
Power Gain
Noise Figure
Symbol
Test Conditions
ICC
No Signal (VPS = 1.8 V)
3.3
mA
GP
Pin = 35 dBm
19.5
dB
0.9
dB
9.5
dBm
NF
Input 3rd Order Intercept Point
IIP3
Input Return Loss
RLin
9.5
dB
RLout
15.5
dB
ISL
36
dB
Pin (1 dB)
23.5
dBm
Output Return Loss
SC
Isolation
fin1 = 1 575 MHz, fin2 = 1 574 MHz
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Gain 1 dB Compression Input Power
Data Sheet PU10706EJ01V0DS
3
PC8233TK
COMPONENT LIST
Value
Unit
C1
Chip Capacitor
1 000
pF
C2
Chip Capacitor
1.2
pF
C3
Chip Capacitor
18
pF
C4
Chip Capacitor
1 000
pF
L1
Chip Inductor
8.2
nH
L2
Chip Inductor
18
nH
L3
Chip Inductor
6.8
nH
R1
Chip Resistor
360

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Type
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SC
Symbol
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D
TEST CIRCUIT
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Data Sheet PU10706EJ01V0DS
PC8233TK
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D
TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10706EJ01V0DS
5
DI
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D
PC8233TK
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10706EJ01V0DS
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PC8233TK
Remark The graphs indicate nominal characteristics.
Data Sheet PU10706EJ01V0DS
7
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D
PC8233TK
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SC
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10706EJ01V0DS
PC8233TK
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SC
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D
S-PARAMETERS (T A = +25C, VCC = VPS = 2.7 V, monitored at connector on board)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10706EJ01V0DS
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PC8233TK
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SC
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UE
D
S-PARAMETERS (T A = +25C, VCC = VPS = 1.8 V, monitored at connector on board)
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10706EJ01V0DS
PC8233TK
PACKAGE DIMENSIONS
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SC
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D
6-PIN LEAD-LESS MINIMOLD (1511 PKG) (UNIT: mm)
Data Sheet PU10706EJ01V0DS
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PC8233TK
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground terminals must be connected together with wide ground pattern to decrease impedance
difference.
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(3) The bypass capacitor should be attached to VCC line.
(4) Do not supply DC voltage to INPUT pin.
RECOMMENDED SOLDERING CONDITIONS
For soldering
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This product should be soldered and mounted under the following recommended conditions.
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Soldering Conditions
Peak temperature (package surface temperature)
: 260C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220C or higher
Preheating time at 120 to 180C
IR260
: 60 seconds or less
: 12030 seconds
: 3 times
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Maximum number of reflow processes
Wave Soldering
Condition Symbol
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260C or below
Time at peak temperature
: 10 seconds or less
WS260
Preheating temperature (package surface temperature) : 120C or below
Partial Heating
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
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Caution Do not use different soldering methods together (except for partial heating).
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Data Sheet PU10706EJ01V0DS
HS350