DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT MPC8231TK SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The MPC8231TK is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. This device exhibits low noise figure and high power gain characteristics. This device is enabled in the frequency range from 1.5 to 2.4 GHz by modifying the external matching circuit. The package is 6-pin lead-less minimold, suitable for surface mount. This IC is manufactured using our UHS4 (Ultra High Speed Process) SiGe:C bipolar process. FEATURES • Low noise : NF = 0.8 dB TYP. @ fin = 1 575 MHz • High gain : GP = 20 dB TYP. @ fin = 1 575 MHz • Low current consumption : ICC = 3.8 mA TYP. @ VCC = 3.0 V • Built-in power-saving function : 6-pin lead-less minimold package (1.5 s 1.1 s 0.55 mm) • High-density surface mounting • Included very robust bandgap regulator (Small VCC and TA dependence) • Included protection circuits for ESD APPLICATION • Low noise amplifier for GPS and mobile communications ORDERING INFORMATION Part Number MPC8231TK-E2 Order Number MPC8231TK-E2-A Package 6-pin lead-less minimold (1511 PKG) (Pb-Free) Marking 6K Supplying Form • 8 mm wide embossed taping • Pin 1, 6 face the perforation side of the tape • Qty 5 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: MPC8231TK Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10613EJ01V0DS (1st edition) Date Published April 2006 NS CP(N) MPC8231TK PIN CONNECTIONS (Top View) 2 6K 1 (Bottom View) 3 6 6 1 5 5 2 4 4 3 INTERNAL BLOCK DIAGRAM INPUT 1 6 VCC GND 2 5 GND 4 OUTPUT Bias Power Save 2 3 Data Sheet PU10613EJ01V0DS Pin No. Pin Name 1 INPUT 2 GND 3 Power Save 4 OUTPUT 5 GND 6 VCC MPC8231TK ABSOLUTE MAXIMUM RATINGS P a ra m et er S y m b ol T es t C on di t i o ns Ratings U ni t Supply Vol tage VCC TA = +25oC 4.0 V Power-Saving Voltage VPS TA = +25oC 4.0 V Power Dissipatio n PD TA = +85°C 232 mW Operating Ambient Temperature TA 40 to +85 oC Storage Temperature Tstg 55 to +150 oC Input Power Pin +10 dBm Note Note Mounted on double-side copper-clad 50 s 50 s 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Supply Vol tage VCC 2.7 3.0 3.3 V Operating Ambient Temperature TA 40 +25 +85 oC Power Save Turn-on Voltage VPSon 1.6 VCC V Power Save Turn-off Voltage VPSoff 0 0.4 V Data Sheet PU10613EJ01V0DS 3 MPC8231TK ELECTRICAL CHARACTERISTICS (TA = +25oC, VCC = VPS = 3.0 V, fin = 1 575 MHz, unless otherwise specified) Parameter Symbol Test Conditions Circuit Current ICC No Signal (VPS = 3.0 V) Power Gain GP Pin = 35 dBm Noise Figure NF Input 3rd Order Distortion Intercept IIP3 MIN. TYP. MAX. Unit 2.8 3.8 5.1 mA 1 MA 17 .5 20 22 .5 dB 0.8 1.1 dB 10 dBm At Power-Saving Mode (VPS = 0 V) fin1 = 1 574 MHz, fin2 = 1 575 MHz Point Input Retu rn Lo ss RLin 7 10 dB Output Return Loss RLout 10 18 dB ISL 35 dB Pin (1 dB) 22 dBm Isolation Gain 1 dB Compression Input Power TEST CIRCUIT 1 000 pF 100 pF INPUT 1 6 2 5 3 4 VCC 4.7 nH 18 nH 470 7 100 pF VPS 4 OUTPUT 8.2 nH 0.1 MF Data Sheet PU10613EJ01V0DS MPC8231TK TYPICAL CHARACTERISTICS (TA = +25oC, unless otherwise specified) CIRCUIT CURRENT vs. POWER-SAVING VOLTAGE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 6 6 5 Circuit Current ICC (mA) Circuit Current ICC (mA) 5 TA = +85oC 4 3 +25oC –40oC 2 1 TA = +85oC 4 3 +25oC –40oC 2 1 VCC = VPS RF = off 0 2.0 2.5 3.5 3.0 VCC = 3 V RF = off 0 0 4.0 0.5 Supply Voltage VCC (V) 2.0 2.5 3.0 1.6 TA = –40oC 1.4 Noise Figure NF (dB) 22 Power Gain GP (dB) 1.5 NOISE FIGURE vs. FREQUENCY POWER GAIN vs. FREQUENCY 24 20 +25oC 18 +85oC 16 TA = +85oC 1.2 1.0 0.8 0.6 +25oC 0.4 –40oC 0.2 14 1 500 1.0 Power-Saving Voltage VPS (V) VCC = VPS = 3 V 1 525 1 550 1 575 0 1 500 1 600 VCC = VPS = 3 V 1 525 1 550 1 575 1 600 Frequency fin (MHz) Frequency fin (MHz) POWER GAIN vs. OPERATING AMBIENT TEMPERATURE NOISE FIGURE vs. OPERATING AMBIENT TEMPERATURE 1.6 24 1.4 Noise Figure NF (dB) Power Gain GP (dB) 22 20 18 16 VCC = VPS = 3 V fin = 1 575 MHz 14 –50 –25 0 25 50 75 100 1.2 1.0 0.8 0.6 0.4 0.2 0 –50 Operating Ambient Temperature TA (oC) VCC = VPS = 3 V fin = 1 575 MHz –25 0 25 50 75 100 Operating Ambient Temperature TA (oC) Remark The graphs indicate nominal characteristics. Data Sheet PU10613EJ01V0DS 5 MPC8231TK POWER GAIN vs. SUPPLY VOLTAGE NOISE FIGURE vs. SUPPLY VOLTAGE 24 1.6 TA = –40oC 1.4 Noise Figure NF (dB) Power Gain GP (dB) 22 20 +25oC 18 +85oC 16 VCC = VPS fin = 1 575 MHz 14 2.4 2.6 2.8 3.0 3.2 3.4 1.0 0.8 +25oC 0.6 0.4 –40oC 0 2.4 3.6 3.2 3.4 3.6 OUTPUT POWER vs. INPUT POWER 10 VCC = VPS = 3 V fin = 1 575 MHz TA = +25oC –20 0 VCC = VPS = 3 V fin = 1 575 MHz TA = –40oC –10 –20 Pin (1dB) = –23.2 dBm Pin (1dB) = –21.8 dBm –40 –30 –20 –30 –50 –10 Input Power Pin (dBm) VCC = VPS = 3 V fin = 1 575 MHz TA = +85oC –10 –20 Pin (1dB) = –20.9 dBm –40 –30 –20 –10 Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER vs. INPUT POWER –30 –50 –40 –30 –20 –10 Input Power Pin (dBm) 10 Output Power Pout (dBm) 3.0 OUTPUT POWER vs. INPUT POWER –30 –50 OUTPUT POWER, IM3 vs. INPUT POWER +20 VCC = VPS = 3 V fin1 = 1 574 MHz 0 fin2 = 1 575 MHz Pout –20 –40 IM3 –60 –80 IIP3 = –10.6 dBm –100 –40 –30 –20 –10 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 6 2.8 Supply Voltage VCC (V) –10 0 2.6 VCC = VPS fin = 1 575 MHz Supply Voltage VCC (V) Output Power Pout (dBm) Output Power Pout (dBm) 1.2 0.2 10 0 TA = +85oC Data Sheet PU10613EJ01V0DS 0 MPC8231TK S-PARAMETERS (TA = +25oC, VCC = VPS = 3.0 V, monitored at connector on board) S11–FREQUENCY S22–FREQUENCY 1:1 575 MHz 43.82 7 8.98 7 1:1 575 MHz 25.41 7 –2.24 7 1 1 START 100.000 000 MHz START 100.000 000 MHz STOP 4 000.000 000 MHz INPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY 0 Output Return Loss RLout (dB) Input Return Loss RLin (dB) 0 –5 –10 –15 –20 –25 0 500 –5 –10 –15 –20 –25 1 000 1 500 2 000 2 500 3 000 3 500 4 000 0 500 POWER GAIN vs. FREQUENCY ISOLATION vs. FREQUENCY 0 25 –10 Isolation ISL (dB) 20 Power Gain GP (dB) 1 000 1 500 2 000 2 500 3 000 3 500 4 000 Frequency f (MHz) Frequency f (MHz) 15 10 5 0 STOP 4 000.000 000 MHz –20 –30 –40 –50 0 500 1 000 1 500 2 000 2 500 3 000 3 500 4 000 –60 0 500 1 000 1 500 2 000 2 500 3 000 3 500 4 000 Frequency f (MHz) Frequency f (MHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10613EJ01V0DS 7 MPC8231TK APPLIED CIRCUIT EXAMPLE C1 C4 L1 INPUT 1 6 2 5 3 4 VCC C2 VPS R1 L2 OUTPUT L3 C5 C3 EXTERNAL PARTS CHART Value Symbol Parts Unit 1.575 GHz Band 1.9 GHz Band 2.14 GHz Band 2.4 GHz Band L1 Chip Inductor 5.6 3.9 3.3 2.7 nH L2 Chip Inductor 18 12 8.2 6.8 nH L3 Chip Inductor 10 8.2 6.8 5.6 nH C1 Chip Capacitor 120 5.0 2.0 2.0 pF C2 Chip Capacitor 1.3 0.7 0.5 0.3 pF C3 Chip Capacitor 120 5.0 5.0 5.0 pF C4 Chip Capacitor 1 000 1 000 1 000 1 000 pF C5 Chip Capacitor 1 000 1 000 1 000 1 000 pF R1 Chip Resistor 470 470 470 470 7 TYPICAL CHARACTERISTICS (TA = +25oC, VCC = VPS = 3.0 V, unless otherwise specified) Reference Value Parameter Symbol Unit 1.575 GHz 1.9 GHz 2.14 GHz 2.4 GHz Power Gain GP 20.0 19.0 18.0 17.0 dB Noise Figu re NF 0. 7 8 0. 9 5 1 .1 0 1 .2 7 dB Input Return Loss RLin 10.4 10.2 10.2 10.5 dB Output Return Loss RLout 21.0 30.0 32.2 23.0 dB 8 Data Sheet PU10613EJ01V0DS MPC8231TK PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (1511 PKG) (UNIT: mm) (Bottom View) 0.16±0.05 1.1±0.1 0.2±0.1 0.9±0.1 0.11+0.1 –0.05 1.3±0.05 0.55±0.03 1.5±0.1 0.48±0.05 0.48±0.05 (Top View) Data Sheet PU10613EJ01V0DS 9 MPC8231TK NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) Do not supply DC voltage to INPUT pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Metho d Infrared Reflow Wave Soldering S o l d e r i n g C ond itions C ondi ti on Sy mbo l Peak temperature (package surface temperature) : 260oC or below Time at peak temperature : 10 seconds or less Time at temperature of 220oC or higher : 60 seconds or less Preheating time at 120 to 180oC : 120p30 seconds Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 3 times : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260oC or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120oC or below Partial Heating Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 1 time : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350oC or below Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 3 seconds or less : 0.2%(Wt.) or below Caution Do not use different soldering methods together (except for partial heating). 10 Data Sheet PU10613EJ01V0DS HS350 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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