DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μPC8211TK ED SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The μPC8211TK is a silicon germanium (SiGe) monolithic integrated circuit designed as a low noise amplifier for GPS and mobile communications. IN U The package is 6-pin lead-less minimold, suitable for surface mount. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Low noise : NF = 1.3 dB TYP. @ VCC = 3.0 V • High gain • Low current consumption : GP = 18.5 dB TYP. @ VCC = 3.0 V : ICC = 3.5 mA TYP. @ VCC = 3.0 V • Gain 1 dB compression output power : Po (1 dB) = −6.0 dBm @ VCC = 3.0 V • Built-in power-save function APPLICATION : 6-pin lead-less minimold package (1.5 × 1.3 × 0.55 mm) O NT • High-density surface mounting • Low noise amplifier for GPS and mobile communications ORDERING INFORMATION Part Number μPC8211TK-E2-A Package Marking 6-pin lead-less minimold (1511 PKG) (Pb-Free) DI SC μPC8211TK-E2 Order Number Note 6G Supplying Form • Embossed tape 8 mm wide • Pin 1, 6 face the perforation side of the tape • Qty 5 kpcs/reel Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: μPC8211TK-A Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10426EJ04V0DS (4th edition) Date Published January 2006 CP(K) The mark shows major revised points. μPC8211TK PIN CONNECTIONS (Top View) 3 6 6 1 5 5 2 4 4 3 1 GND 2 O NT Bias 3 DI SC PS 2 Pin Name 1 INPUT 2 GND 3 PS 4 OUTPUT 5 GND 6 VCC IN U INTERNAL BLOCK DIAGRAM INPUT Pin No. ED 2 6G 1 (Bottom View) Data Sheet PU10426EJ04V0DS 6 VCC 5 GND 4 OUTPUT μPC8211TK ABSOLUTE MAXIMUM RATINGS Symbol Supply Voltage VCC Power-Saving Voltage VPS Power Dissipation of Package PD Operating Ambient Temperature TA Storage Temperature Tstg Input Power Pin Test Conditions TA = +25°C Note TA = +85°C Ratings Unit 4.0 V −0.3 to VCC +0.3 V 232 mW −40 to +85 °C −55 to +150 °C +10 dBm ED Parameter RECOMMENDED OPERATING RANGE Symbol MIN. Supply Voltage VCC 2.7 Operating Ambient Temperature TA −25 Operating Frequency Range fin − TYP. MAX. Unit 3.0 3.3 V +25 +85 °C 1 575 − MHz DI SC O NT Parameter IN U Note Mounted on double-side copper-clad 50 × 50 × 1.6 mm epoxy glass PWB Data Sheet PU10426EJ04V0DS 3 μPC8211TK ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 3.0 V, VPS = 3.0 V, fin = 1 575 MHz, unless otherwise specified) Parameter Symbol Circuit Current ICC Test Conditions No Signal GP Noise Figure NF Input 3rd Order Distortion Intercept IIP3 Input Return Loss RLin Output Return Loss RLout Point Isolation ISL Rising Voltage From Power-Saving VPSon Falling Voltage From Power-Saving Mode VPSoff Gain Flatness Flat Mode Gain 1 dB Compression Output PO TEST CIRCUIT IN Pin = −10 dBm O NT Output Power fRF = ± 2.5 MHz PO (1 dB) Power L1 C3 33 pF 4.7 nH 1 6 2 5 3 4 1.3 pF C2 VPS R1 750 Ω 0.1μF DI SC High : ON Low : OFF (Power-Save) C1 MAX. Unit 2.5 3.5 4.5 mA − − 1 μA 15 . 5 1 8. 5 2 1. 5 dB − 1.3 1.5 dB − −12 − dBm 6.0 7.5 − dB 10 14.5 − dB IN U Power Gain TYP. ED At Power-Saving Mode MIN. − 33.5 − dB 2.2 − − V − − 0.8 V − − 0.5 dB − −6.0 − dBm −1.5 +2.0 − dBm C4 0.1μF L2 22 nH 8.2 nH L3 VCC C5 82 pF OUT COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Symbol Form Rating Part Number Maker C1, C4 Chip Capacitor 0.1 μF GRM36 Murata C2 Chip Capacitor 1.3 pF GRM36 Murata C3 Chip Capacitor 33 pF GRM36 Murata C5 Chip Capacitor 82 pF GRM36 Murata R1 Resistor 750 Ω RR0816 Susumu L1 Inductor 4.7 nH TFL0510 Susumu L2 Inductor 22 nH TFL0816 or TFL0510 Susumu L3 Inductor 8.2 nH TFL0510 Susumu 4 Data Sheet PU10426EJ04V0DS μPC8211TK ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD ED VCC 6 IN 750 Ω 22 nH 4.7 nH 8.2 nH 3 1.3 pF 82 pF OUT 0.1 μ F O NT 2 4 33 pF PS Notes 1. 30 × 30 × 0.51 mm double-side copper-clad hydrocarbon ceramic woven glass PWB (Rogers: R04003, εr = 3.38). DI SC 1 5 IN U 0.1 μ F 2. 3. 4. 5. Back side: GND pattern Au plated on pattern represents cutout : Through holes Data Sheet PU10426EJ04V0DS 5 μPC8211TK TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) NOISE FIGURE vs. FREQUENCY VOLTAGE GAIN vs. FREQUENCY Noise Figure NF (dB) TA = –40˚C 20 TA = +25˚C 18 TA = +85˚C 16 1.6 1.0 0.8 TA = 85˚C TA = 25˚C –5 1.55 30 10 f1 = 1 575.5 MHz f2 = 1 576.5 MHz Pout –30 –50 –25 1 2 3 4 –90 –50 VCC = VPS = 3.0 V TA = 25˚C –40 –30 –20 –10 Input Power Pin (dBm) OUTPUT POWER (2 tones), IM3 vs. INPUT POWER OUTPUT POWER (2 tones), IM3 vs. INPUT POWER DI SC Power-Save Pin Applied Voltage VPS (V) f1 = 1 575.5 MHz f2 = 1 576.5 MHz Pout –10 –70 –30 –20 f1 = 1 575.5 MHz f2 = 1 576.5 MHz Pout –50 VCC = VPS = 3.0 V TA = –40˚C –40 10 0 –30 IM3 –50 30 –10 –30 –90 –50 IM3 –70 VCC = 3.0 V f = 1 575 MHz 0 1.6 OUTPUT POWER (2 tones), IM3 vs. INPUT POWER –10 TA = –25˚C –15 –10 0 IM3 –70 –90 –50 Input Power Pin (dBm) VCC = VPS = 3.0 V TA = 85˚C –40 –30 –20 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 6 TA = –40˚C 0.4 1.5 Output Power (2 tones) Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 15 5 TA = +85˚C TA = +25˚C O NT Voltage Gain Gain (dB) 1.2 Frequency f (GHz) 25 10 1.4 IN U 1.55 VOLTAGE GAIN vs. POWER-SAVE PIN APPLIED VOLTAGE 30 1.6 0.6 Frequency f (GHz) –35 VCC = VPS = 3.0 V 1.8 ED 22 14 1.5 Output Power (2 tones) Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 2.0 VCC = VPS = 3.0 V Output Power (2 tones) Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Voltage Gain Gain (dB) 24 Data Sheet PU10426EJ04V0DS –10 0 μPC8211TK S-PARAMETERS (TA = +25°C, VCC = VPS = 3.0 V, monitored at connector on board) S11-FREQUENCY S22-FREQUENCY ED 1 1; 57.094 Ω 51.530 Ω 5.2072 nH 1.575 000 000 GHz STOP 2 000.000 000 MHz START 100.000 000 MHz INPUT RETURN LOSS vs. FREQUENCY Output Return Loss RLout (dB) –8 –10 –12 0.1 OUTPUT RETURN LOSS vs. FREQUENCY 0 –2 –6 –5 –10 1.575 GHz 1.0 –15 –20 –25 0.1 10 Frequency f (GHz) POWER GAIN vs. FREQUENCY 0 –10 15 10 5 0 0.1 1.575 GHz 1.0 1.575 GHz 1.0 10 Frequency f (GHz) ISOLATION vs. FREQUENCY –5 20 Isolation ISL (dB) Power Gain Gain (dB) DI SC 25 1; 31.739 Ω 3.4192 Ω 29.554 pF 1.575 000 000 GHz STOP 2 000.000 000 MHz START 100.000 000 MHz O NT Input Return Loss RLin (dB) 0 –4 IN U 1 1.575 GHz –15 –20 –25 –30 –35 –40 –45 10 –50 0.1 Frequency f (GHz) 1.0 10 Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10426EJ04V0DS 7 μPC8211TK PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (1511 PKG) (UNIT: mm) 0.16±0.05 0.48±0.05 0.48±0.05 1.5±0.1 1.1±0.1 0.2±0.1 8 0.9±0.1 IN U DI SC O NT Remark ( ) : Reference value 0.11+0.1 –0.05 0.55±0.03 1.3±0.05 ED (Bottom View) (Top View) Data Sheet PU10426EJ04V0DS μPC8211TK NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. RECOMMENDED SOLDERING CONDITIONS ED (3) The bypass capacitor should be attached to VCC line. This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Metho d Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Condition Symbo l : 260°C or below : 10 seconds or less IN U Infrared Reflow Soldering Conditions For soldering IR260 : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating O NT Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (terminal temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 DI SC Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10426EJ04V0DS 9