DATA SHEET GaAs INTEGRATED CIRCUIT μPG2179TB ED L, S-BAND MEDIUM POWER SPDT SWITCH DESCRIPTION The μPG2179TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and other 3.0 GHz, with low insertion loss and high isolation. IN U L, S-band applications. This device operates with dual control voltages of 2.5 to 5.3 V. This device can operate from 0.05 to This device is housed in a 6-pin super minimold package, and is suitable for high-density surface mounting. FEATURES • Switch control voltage : Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • Low insertion loss : Lins1 = 0.25 dB TYP. @ f = 0.05 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins2 = 0.30 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V • High isolation • Power handling O NT : Lins3 = 0.35 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins4 = 0.40 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : ISL1 = 27 dB TYP. @ f = 0.05 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : ISL2 = 24 dB TYP. @ f = 2.0 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Pin (0.1 dB) = +29.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Pin (1 dB) = +32.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATIONS • L, S-band digital cellular or cordless telephone DI SC • PCS, W-LAN, WLL and BluetoothTM etc. ORDERING INFORMATION Part Number μPG2179TB-E4-A Package 6-pin super minimold Marking G4C Supplying Form • Embossed tape 8 mm wide • Pin 4, 5, 6 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: μPG2179TB-A Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PG10454EJ02V0DS (2nd edition) Date Published March 2004 CP(K) The mark shows major revised points. μPG2179TB PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM 2 3 G4C 1 (Top View) (Bottom View) 6 1 6 6 5 2 5 5 4 3 4 4 1 Pin No. Pin Name 1 OUTPUT1 2 GND 3 OUTPUT2 4 Vcont2 5 INPUT 6 Vcont1 ED (Top View) 2 3 IN U TRUTH TABLE Vcont1 Vcont2 INPUT−OUTPUT1 INPUT−OUTPUT2 Low High ON OFF High Low OFF ON ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Input Power Ratings Vcont 6.0 Unit Note O NT Switch Control Voltage Symbol V Pin +33 dBm Operating Ambient Temperature TA −45 to +85 °C Storage Temperature Tstg −55 to +150 °C Note ⏐Vcont1 − Vcont2⏐ ≤ 6.0 V RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter MIN. TYP. MAX. Unit Vcont (H) 2.5 3.0 5.3 V −0.2 0 0.2 V DI SC Switch Control Voltage (H) Symbol Switch Control Voltage (L) 2 Vcont (L) Data Sheet PG10454EJ02V0DS μPG2179TB ELECTRICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC blocking capacitors = 100 pF, unless otherwise specified) Symbol Test Conditions MIN. TYP. MAX. Unit − 0.25 0.45 dB − 0.30 0.50 dB − 0.35 0.55 dB − 0.40 0.60 dB 23 27 − dB 20 24 − dB 15 20 − dB 15 20 − dB f = 2.0 GHz +25.5 +29.0 − dBm f = 2.5 GHz +25.5 +29.0 − dBm f = 0.5 to 3.0 GHz − +29.0 − dBm Insertion Loss 1 Lins1 f = 0.05 to 1.0 GHz Insertion Loss 2 Lins2 f = 1.0 to 2.0 GHz Insertion Loss 3 Lins3 f = 2.0 to 2.5 GHz Insertion Loss 4 Lins4 f = 2.5 to 3.0 GHz Isolation 1 ISL1 f = 0.05 to 2.0 GHz Isolation 2 ISL2 f = 2.0 to 3.0 GHz Input Return Loss RLin f = 0.05 to 3.0 GHz Note1 Output Return Loss RLout f = 0.05 to 3.0 GHz Note1 Input Power Pin (0.1 dB) Note2 Note1 IN U 0.1 dB Loss Compression Note1 ED Parameter Switch Control Current Icont No signal − 4 20 μA Switch Control Speed tsw 50%CTL to 90/10%RF − 50 500 ns Note1. DC blocking capacitor = 1 000 pF at f = 0.05 to 0.5 GHz. range. O NT 2. Pin (0.1 dB) is the measured input power level when the insertion loss increases 0.1 dB more than that of linear STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC blocking capacitors = 100 pF, unless otherwise specified) Parameter Symbol 1 dB Loss Compression Pin (1 dB) Input Power Note 3rd Order Intermodulation Intercept MIN. TYP. MAX. Unit f = 0.5 to 3.0 GHz − +32.0 − dBm f = 0.5 to 3.0 GHz, 2 tone, − +60.0 − dBm 5 MHz spicing DI SC Point IIP3 Test Conditions Note Pin (1 dB) is the measured input power level when the insertion loss increases 1 dB more than that of linear range. Caution When using this IC, a DC coupling capacitor must be externally attached to the I/O pins. A DC coupling capacitor with a capacitance of 100 pF or lower is recommended when using a frequency of 0.5 GHz or higher, and one with a capacitance of 1,000 pF is recommended when using a frequency of less than 0.5 GHz. The ideal value changes depending on the frequency and bandwidth used, so select a capacitor with a suitable capacitance according to the usage conditions. Data Sheet PG10454EJ02V0DS 3 μPG2179TB EVALUATION CIRCUIT OUTPUT2 OUTPUT1 2 1 4 5 6 IN U 1 000 pF 3 CO Vcont2 Remark CO : 0.05 to 0.5 GHz 1 000 pF 1 000 pF INPUT Vcont1 O NT 0.5 to 3.0 GHz 100 pF ED CO CO DI SC The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 4 Data Sheet PG10454EJ02V0DS μPG2179TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Vcont2 ED 6pin SMM SPDT SW Vc2 OUTPUT2 2 IN U C2 C C 4 OUT 2 INPUT C1 IN G4C C1 C3 C1 C C C2 O NT 5 1 OUT 1 OUTPUT1 Vc1 Vcont1 DI SC USING THE NEC EVALUATION BOARD Symbol C1, C2, C3 C4, C5 Values 100 pF 1 000 pF Data Sheet PG10454EJ02V0DS 5 μPG2179TB TYPICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC blocking capacitors = 100 pF, unless otherwise specified) 0.4 0.4 0.3 0.3 0.2 0.1 0 –0.1 –0.2 –0.4 50 10 0 –10 –20 –30 –40 50 30 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) INPUT–OUTPUT1 INPUT RETURN LOSS vs. FREQUENCY INPUT–OUTPUT2 INPUT RETURN LOSS vs. FREQUENCY DI SC Frequency f (GHz) 50 40 40 Input Return Loss RLin (dB) 50 30 20 10 0 –10 –20 –30 30 20 10 0 –10 –20 –30 –40 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) Frequency f (GHz) Remark The graphs indicate nominal characteristics. 6 INPUT–OUTPUT2 ISOLATION vs. FREQUENCY 40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Input Return Loss RLin (dB) –0.3 –0.5 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Isolation ISL (dB) 20 –0.2 O NT Isolation ISL (dB) 30 0 –0.1 Frequency f (GHz) INPUT–OUTPUT1 ISOLATION vs. FREQUENCY 40 0.1 –0.4 –0.5 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) 0.2 IN U –0.3 INPUT–OUTPUT2 INSERTION LOSS vs. FREQUENCY ED 0.5 Insertion Loss Lins (dB) Insertion Loss Lins (dB) 0.5 INPUT–OUTPUT1 INSERTION LOSS vs. FREQUENCY Data Sheet PG10454EJ02V0DS μPG2179TB INPUT–OUTPUT1 OUTPUT RETURN LOSS vs. FREQUENCY INPUT–OUTPUT2 OUTPUT RETURN LOSS vs. FREQUENCY 40 40 20 10 0 –10 –20 –30 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) f = 1.0 GHz 25 17 15 13 15 17 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 33 Output Power Pout (dBm) 27 19 –10 OUTPUT POWER vs. INPUT POWER 31 29 21 0 Frequency f (GHz) OUTPUT POWER vs. INPUT POWER 23 10 f = 2.5 GHz 29 27 25 23 O NT Output Power Pout (dBm) 31 20 IN U –40 30 ED 30 33 50 Output Return Loss RLout (dB) Output Return Loss RLout (dB) 50 21 19 17 15 19 21 23 25 27 29 31 33 35 13 15 17 Input Power Pin (dBm) 19 21 23 25 27 29 31 33 35 Input Power Pin (dBm) DI SC Remark The graphs indicate nominal characteristics. Data Sheet PG10454EJ02V0DS 7 μPG2179TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 ED 0.2+0.1 –0.05 0.65 0.65 1.3 2.0±0.2 1.25±0.1 8 Data Sheet PG10454EJ02V0DS 0.15+0.1 –0.05 IN U DI SC O NT 0 to 0.1 0.7 0.9±0.1 0.1 MIN. μPG2179TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Peak temperature (package surface temperature) : 10 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 3 times : 0.2%(Wt.) or below : 215°C or below Preheating time at 120 to 150°C : 30 to 60 seconds Time at temperature of 200°C or higher Peak temperature (molten solder temperature) Time at peak temperature : 25 to 40 seconds VP215 : 3 times IN U Maximum chlorine content of rosin flux (% mass) IR260 : 60 seconds or less Peak temperature (package surface temperature) Maximum number of reflow processes Wave Soldering : 260°C or below Time at peak temperature Time at temperature of 220°C or higher VPS Condition Symbol ED Infrared Reflow Soldering Conditions For soldering : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less WS260 Preheating temperature (package surface temperature) : 120°C or below Maximum number of flow processes : 1 time Peak temperature (pin temperature) : 350°C or below Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Maximum chlorine content of rosin flux (% mass) Soldering time (per side of device) O NT Partial Heating : 0.2%(Wt.) or below : 3 seconds or less HS350 DI SC Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10454EJ02V0DS 9 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. ED μPG2179TB DI SC O NT IN U • The information in this document is current as of March, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 10 Data Sheet PG10454EJ02V0DS μPG2179TB Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. ED 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. DI SC O NT IN U • Do not lick the product or in any way allow it to enter the mouth. 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