DATA SHEET GaAs INTEGRATED CIRCUIT µPG2160T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2160T5K is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for mobile phone and another L, S-band applications. This device can operate frequency from 0.5 to 3.0 GHz, having the low insertion loss and high isolation. This device is housed in a 6-pin plastic TSSON (Thin Shrink Small Out-line Non-leaded) package. And this package is able to high-density surface mounting. FEATURES • Supply voltage • Switch control voltage • • • • : VDD = 2.4 to 2.8 V (2.6 V TYP.) : Vcont (H) = 2.4 to VDD (2.6 V TYP.) : Vcont (L) = −0.2 to 0.2 V (0 V TYP.) Low insertion loss : Lins1 = 0.30 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V : Lins2 = 0.35 dB TYP. @ f = 1.0 to 2.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V : Lins3 = 0.40 dB TYP. @ f = 2.0 to 2.5 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V : Lins4 = 0.50 dB TYP. @ f = 2.5 to 3.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V High isolation : ISL1 = 25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V : ISL2 = 18 dB TYP. @ f = 1.0 to 2.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V : ISL3 = 17 dB TYP. @ f = 2.0 to 2.5 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V : ISL4 = 13 dB TYP. @ f = 2.5 to 3.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V Handling power : Pin (0.1 dB) = +21.0 dBm TYP. @ f = 2.0/2.5 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V High-density surface mounting : 6-pin plastic TSSON package (1.0 × 1.0 × 0.37 mm) APPLICATIONS • L, S-band digital cellular or cordless telephone TM • W-LAN, WLL and Bluetooth etc. ORDERING INFORMATION Part Number µPG2160T5K-E2 Order Number µPG2160T5K-E2-A Package 6-pin plastic TSSON (Pb-Free) Note Marking G4 Supplying Form • Embossed tape 8 mm wide • Pin 1, 6 face the perforation side of the tape • Qty 5 kpcs/reel Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2160T5K Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PG10635EJ01V0DS (1st edition) Date Published September 2006 NS CP(K) Printed in Japan 2006 µPG2160T5K PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) 1 G4 2 (Bottom View) (Top View) 6 1 6 6 1 5 2 5 5 2 4 3 4 3 4 3 Pin No. Pin Name 1 OUTPUT1 2 GND 3 OUTPUT2 4 Vcont 5 INPUT 6 VDD TRUTH TABLE Vcont INPUT−OUTPUT1 INPUT−OUTPUT2 High OFF ON Low ON OFF ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Symbol Ratings Unit Supply Voltage VDD +6.0 V Switch Control Voltage Vcont +6.0 V Input Power Pin +26 dBm Operating Ambient Temperature TA −45 to +85 °C Storage Temperature Tstg −55 to +135 °C RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Supply Voltage Note Switch Control Voltage (H) Switch Control Voltage (L) Note Symbol MIN. TYP. MAX. Unit VDD 2.4 2.6 2.8 V Vcont (H) 2.4 2.6 VDD V Vcont (L) −0.2 0 0.2 V Note Vcont (H) ≤ VDD 2 Data Sheet PG10635EJ01V0DS µPG2160T5K ELECTRICAL CHARACTERISTICS (TA = +25°C, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V, DC cut capacitors = 56 pF, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit dB Insertion Loss 1 Lins1 f = 0.5 to 1.0 GHz − 0.30 0.45 Insertion Loss 2 Lins2 f = 1.0 to 2.0 GHz − 0.35 0.50 Insertion Loss 3 Lins3 f = 2.0 to 2.5 GHz − 0.40 0.55 Insertion Loss 4 Lins4 f = 2.5 to 3.0 GHz − 0.50 0.65 Isolation 1 ISL1 f = 0.5 to 1.0 GHz 22 25 − Isolation 2 ISL2 f = 1.0 to 2.0 GHz 15 18 − Isolation 3 ISL3 f = 2.0 to 2.5 GHz 14 17 − Isolation 4 ISL4 f = 2.5 to 3.0 GHz 10 13 − Input Return Loss RLin f = 0.5 to 3.0 GHz 15 20 − dB Output Return Loss RLout f = 0.5 to 3.0 GHz 15 20 − dB +18.0 +21.0 − dBm 0.1 dB Loss Compression Input Power Pin (0.1 dB) f = 2.0/2.5 GHz dB Note 2nd Harmonics 2f0 f = 2.0/2.5 GHz, Pin = +10 dBm 65 75 − dBc 3rd Harmonics 3f0 f = 2.0/2.5 GHz, Pin = +10 dBm 65 75 − dBc Supply Current IDD No signal − 50 100 µA Switch Control Current Icont − 4 20 µA Switch Control Speed tSW − 150 − ns 50% CTL to 90/10% RF Note Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear range. Caution This device is used it is necessary to use DC cut capacitors. Data Sheet PG10635EJ01V0DS 3 µPG2160T5K EVALUATION CIRCUIT VDD INPUT Vcont 1 000 pF 1 000 pF C0 6 5 4 1 2 3 C0 OUTPUT1 C0 OUTPUT2 Remark C0 : 56 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 4 Data Sheet PG10635EJ01V0DS µPG2160T5K ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Vcont INPUT G4 C 3 C 5 OUTPUT2 C1 C 2 C 4 OUTPUT1 VDD USING THE NEC EVALUATION BOARD Symbol C1, C2, C3 C4, C5 Values 56 pF 1 000 pF Data Sheet PG10635EJ01V0DS 5 µPG2160T5K TYPICAL CHARACTERISTICS (TA = +25°C, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V, DC cut capacitors = 56 pF, using test fixture, unless otherwise specified) INPUT-OUTPUT1 INSERTION LOSS vs. FREQUENCY 1.5 3: 1.0 4: 0.5 5: 1 –0.5 2 3 5 –1.5 2.5 1: –0.255 dB 2.0 2: –0.304 dB 1.5 3: –0.354 dB 1.0 4: –0.408 dB 0.5 5: –0.506 dB 0 –2.0 1.9 2.5 3.1 3.0 GHz 1 2 3 4 5 0.7 1.3 1.9 2.5 3.1 Frequency f (GHz) INPUT-OUTPUT1 ISOLATION vs. FREQUENCY INPUT-OUTPUT2 ISOLATION vs. FREQUENCY 2: 3: 20 4: 10 5: 0 0.5 GHz –24.659 dB 1.0 GHz –19.114 dB 2.0 GHz –17.362 dB 2.5 GHz –15.87 dB 3.0 GHz –10 1 3 4 5 Isolation ISL (dB) –30.53 dB 1: –30 50 1: –30.378 dB 40 2: –24.496 dB 30 3: –18.545 dB 20 4: –17.212 dB 10 5: –15.717 dB –20 –40 –50 0.1 1.9 2.0 GHz 2.5 GHz 3.0 GHz –10 –40 1.3 1.0 GHz 0 –50 0.1 0.7 0.5 GHz 1 –30 2 2.5 3.1 0.7 1.3 1.9 5 4 3 2 2.5 3.1 Frequency f (GHz) Frequency f (GHz) INPUT-OUTPUT1 INPUT RETURN LOSS vs. FREQUENCY INPUT-OUTPUT2 INPUT RETURN LOSS vs. FREQUENCY 50 1: 40 2: 30 3: 20 4: 10 5: 0 –10 –18.298 dB 50 1: –18.557 dB 0.5 GHz –22.409 dB 1.0 GHz –28.233 dB 2.0 GHz –31.992 dB 2.5 GHz –27.286 dB 3.0 GHz 40 2: –23.14 dB 1 –20 2 –30 3 –40 –50 0.1 0.7 1.3 1.9 4 2.5 5 0.5 GHz 1.0 GHz 3: –29.248 dB 2.0 GHz 4: –28.445 dB 2.5 GHz 5: –23.756 dB 3.0 GHz 30 20 10 0 –10 1 –20 –30 2 3 –40 3.1 –50 0.1 0.7 1.3 1.9 Frequency f (GHz) Frequency f (GHz) Remark The graphs indicate nominal characteristics. 6 2.5 GHz Frequency f (GHz) 30 –20 2.0 GHz –1.5 –2.5 0.1 1.3 1.0 GHz –1.0 –2.0 0.7 0.5 GHz –0.5 –2.5 0.1 40 Isolation ISL (dB) 4 –1.0 50 Input Return Loss RLin (dB) 0.5 GHz –0.305 dB 1.0 GHz –0.355 dB 2.0 GHz –0.408 dB 2.5 GHz –0.502 dB 3.0 GHz Insertion Loss Lins (dB) 2: 0 –0.255 dB 1: 2.0 Input Return Loss RLin (dB) Insertion Loss Lins (dB) 2.5 INPUT-OUTPUT2 INSERTION LOSS vs. FREQUENCY Data Sheet PG10635EJ01V0DS 4 2.5 5 3.1 µPG2160T5K INPUT-OUTPUT2 OUTPUT RETURN LOSS vs. FREQUENCY INPUT-OUTPUT1 OUTPUT RETURN LOSS vs. FREQUENCY –18.38 dB 50 1: –18.646 dB 0.5 GHz –22.911 dB 1.0 GHz –28.715 dB 2.0 GHz –30.049 dB 2.5 GHz –25.211 dB 3.0 GHz 40 2: –23.332 dB 30 3: –31.078 dB 20 4: –28.398 dB 10 5: –23.042 dB 1: 40 2: 30 3: 20 4: 10 5: 0 –10 1 –20 2 –30 3 –40 –50 0.1 0.7 1.3 1.9 4 2.5 5 3.1 Output Return Loss RLout (dB) Output Return Loss RLout (dB) 50 0.5 GHz 1.0 GHz 2.0 GHz 2.5 GHz 3.0 GHz 0 –10 1 –20 –30 5 2 3 –40 –50 0.1 Frequency f (GHz) 0.7 1.3 1.9 4 2.5 3.1 Frequency f (GHz) OUTPUT POWER vs. INPUT POWER +35 Output Power Pout (dBm) f = 2.0 GHz +30 +25 +20 +15 +10 +5 +8 +12 +16 +20 +24 +28 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PG10635EJ01V0DS 7 µPG2160T5K MOUNTING PAD DIMENSIONS 6-PIN PLASTIC TSSON (UNIT: mm) 0.29 0.29 0.31 6–0.22 0.35 0.35 0.31 Remark The mounting pad layouts in this document are for reference only. 8 Data Sheet PG10635EJ01V0DS µPG2160T5K PACKAGE DIMENSIONS 6-PIN PLASTIC TSSON (UNIT: mm) (Top View) 1.0±0.1 1.0±0.1 (Bottom View) 0.15+0.07 –0.05 0.45 ±0.1 0.35±0.06 0.35±0.06 1.0±0.1 0.15+0.07 –0.05 1.0±0.1 0.13±0.07 0.175±0.075 0.37+0.03 –0.05 0.23±0.07 Data Sheet PG10635EJ01V0DS 9 µPG2160T5K RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Caution Do not use different soldering methods together (except for partial heating). 10 Data Sheet PG10635EJ01V0DS HS350 µPG2160T5K Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. • The information in this document is current as of September, 2006. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 Data Sheet PG10635EJ01V0DS 11 µPG2160T5K Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. For further information, please contact NEC Compound Semiconductor Devices Hong Kong Limited E-mail: [email protected] Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office TEL: +82-2-558-2120 FAX: +82-2-558-5209 NEC Electronics (Europe) GmbH http://www.eu.necel.com/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Compound Semiconductor Devices Division NEC Electronics Corporation URL: http://www.ncsd.necel.com/ 0604