NEC XXXXXXXXXX About CEL California Eastern Laboratories (CEL) is an engineering, sales and marketing company focused on RF Semiconductors, Optical Semiconductors and Wireless Connectivity Solutions. P R O D U C T S b y A P P L I C AT I O N Front End Components Up to 6GHz Applications 2 LNAs for 2 to 8GHz Applications 3 2.4 & 5.8 GHz WLAN & WLAN Infrastructure Devices 4 P R O D U C T S P E C I F I C AT I O N S RF Switch ICs CEL serves designers, OEMs and contract manufacturers in various RF, Wireless and Optical markets. With over 55 years experience in high frequency design, customer support and fulfillment, CEL is ideally positioned to provide its customers with a stable supply of products to meet their specific needs. SPDTs (Single Pole Double Throw) 5 SP3Ts (Single Pole Triple Throw) 6 DPDTs (Double Pole Double Throw) 6 GaAs FETs 6 Low Noise GaAs FETs, 1 to 20GHz Silicon MOSFET Devices RF Power LD-MOSFETs 7 CEL maintains extensive inventories and provides MOSFET for Microphone Impedance Conversion 7 engineering and applications assistance at its technical Silicon Bipolar Transistors centers in Santa Clara, CA., Wauconda, IL and Boulder, CO. Small Signal Silicon Devices 8 Medium Power Transistors 9 Twin Transistors 9 The company supports customers through sales offices, sales representatives and distributors in numerous locations. Silicon RFICs 3V Silicon MMIC Amplifiers 10 5V Silicon MMIC Amplifiers 10 Frequency Upconverters 10 Frequency Downconverters 10 Package Dimensions 11 Product Longevity Program 12 Visit us at cel.com/rf for the most up to date information. CEL Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054 Tel: (408) 919-2500 www.cel.com 1 UPG2253T6S Front End IC Power Up to 6 GHz Applications Front End Components Amplifiers Wi-Fi • Bluetooth • ZigBee • Automated Meter Reading • Mesh & Home Area Networks • ISM Band applications LNAs IN Transceiver OUT High/Medium Power RFIC Switches Power Amplifiers Low Power RFIC Switches RFIC Switches (additional P/Ns available, see page 5) 450 MHz ✔ 915 MHz ✔ 2.4 GHz ✔ UPG2409TB / T6X SPDT, High power, wide bandwidth, SOT-363 and TSON package options UPG2408TB / TK SPDT, Medium power, SOT-363 and smaller package options ✔ ✔ ✔ UPG2406TK SPDT, Medium power, small package (opposite logic vs. UPG2408TX) ✔ ✔ ✔ CKRF2179MM26 SPDT, Medium Power, SOT-363 ✔ ✔ ✔ 2.4 GHz 5 - 6 GHz CKRF2185XS02 SPDT, Medium Power, wide bandwidth, small package UPG2164T5N DPDT, Diversity/ Transfer Switch (two selectable RF paths on) NE5550979A +39.5dBm, 9W, 7.5V LD MOSFET 2.4 GHz NE5550234 +33dBm, 2W,SPDT, 7.5V SP3T LDMOS FET or DPDT 5 - 6 GHz ✔ Chipset ✔ Transceiver Power Amplifier Transistors (additional P/Ns available, see page 7 & 9) NE664M04 RFIC Switches +26dBm, 3.6V Silicon Discrete 450 MHz ✔ ✔ ✔ ✔ ✔ 915 MHz ✔ ✔ ✔ 2.4 GHz ✔ ✔ ✔ NE678M04 +18dBm, 3.0 V Silicon Discrete ✔ ✔ ✔ NE677M04 +15dBm, 3.0 V Silicon Discrete ✔ ✔ ✔ NE662M04 Silicon Discrete, NF = 1.1, Ga = 16.0, OIP3 = +22dBm @ 2GHz NE3509M04 Low Noise Amplifier Transistors NE3508M04 2 915 MHz ✔ ✔ 6 GHz 2.4 GHz ✔ 6 GHz GaAs FET, NF = 0.40, Ga = 17.5, OIP3 = +22dBm @ 2 GHz ✔ ✔ GaAs FET, NF = 0.45, Ga = 14.0, OIP3 = +31dBm @ 2 GHz ✔ ✔ www.cel.com/rf 450 MHz ✔ 6 GHz ✔ Receiver IC RFIC LNA Low Loss Pre-Filter LNAs for 2 to 8GHz Applications High Rejection Post-Filter Tuner / Receiver FIRST STAGE Filter NE662M04 NE3509M04 NE3510M04 THIRD STAGE SECOND STAGE NE662M04 NE3508M04 NE662M04 NE3508M04 LNA Performance (see Data Tables for additional specifications) NF (dB) Gain (dB) P1dB (dBm) Package Silicon Bipolar Transistor 1.1 @ 2.0 GHz 16.0 @ 2.0 GHz +11.0 M04 GaAs HJ-FET 0.45 @ 2.0 GHz 14.0 @ 2.0 GHz +18.0 M04 NE3509M04 GaAs HJ-FET 0.40 @ 2.0 GHz 17.5 @ 2.0 GHz +14.0 M04 NE3510M04 GaAs HJ-FET 0.35 @ 2.0 GHz 19.0 @ 2.0 GHz +12.0 M04 Part Number Description NE662M04 NE3508M04 www.cel.com/rf 3 OUT High/Medium Power RFIC Switches 2.4 & 5.8 GHz WLAN & WLAN Infrastructure Devices Power Amplifiers Low Power RFIC Switches 2.4 GHz 5 - 6 GHz Chipset Transceiver 2.4 GHz SPDT, SP3T or DPDT RFIC Switches 5 -6 GHz GaAs RFIC Switches to 3GHz UPG2408TB SPDT, 3V, 0.50dB Insertion Loss, High ESD immunity UPG2409TB SPDT 2.0 – 4.0 GHz, Insertion Loss: 0.45 dB @ 2.5GHz, 0.6dB @ 3.8 GHz UPG2406TK SPDT, 1.8 or 2.7V control voltage, 0.45dB Insertion Loss @ 2GHz, High ESD immunity CKRF2406XS02 SPDT,Cost-effective,LowestInsertionLoss:[email protected],smallthinpackage CKRF2179MM26 SPDT, Medium power, Insertion Loss: 0.30dB @ 2.5GHz CKRF2413XS01 SP3T,Cost-effective,InsertionLoss:[email protected] GaAs RFIC Switches to 6GHz UPG2422TK SPDT for Dual Band WLAN, 1.8-5.3V control voltage range UPG2163T5N SPDT, Insertion Loss: 0.4dB @ 2.4 GHz, 0.5dB @ 6 GHz, Isolation = 30dB @ 6GHz UPG2176T5N SPDT 2.4 – 6 GHz, Insertion Loss: 0.5 dB @ 2.4GHz, 0.7 dB @ 5.5 GHz, internal terminations UPG2415TK / T6X SPDT for Dual Band WLAN, high power, low insertion loss for Access Point applications UPG2409T6X SPDT for Dual Band WLAN, highest power, low insertion loss for Access Point applications CKRF2185XS02 SPDTforDualBandWLAN,cost-effective,InsertionLoss:0.5dB@6GHz,smallthinpackage CKRF2430XS01 SP3T, Insertion Loss: 0.55dB @ 6GHz, Isolation = 25dB @ 6GHz UPG2164T5N DPDT, Insertion Loss: 0.7dB @ 6 GHz, 17 dB Isolation @ 6GHz UPG2162T5N DPDT, Insertion Loss: 0.85dB @ 6 GHz, 27 dB Isolation @ 6 GHz 4 www.cel.com/rf RF Switch ICs SPDTs (Single Pole Double Throw) TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C) Frequency (GHz, max) Control Voltages (V) Insertion Loss (dB) Isolation (dB) Input Power @ 0.1 dB compression point (dBm) Input Power @ 1.0 dB compression point (dBm) UPD5713TK1 2.5 +1.8, 2.8/0 0.80 @ 2GHz 25 @ 2GHz +17 UPG2009TB1 3.0 +2.8/0 0.30 @ 2GHz 28 @ 2GHz UPG2030TK1 3.0 +2.8/0 0.30 @ 2GHz UPG2155TB1 2.5 +2.6/0 UPG2163T5N1 8.0 UPG2176T5N1 Pkg. Code4 Description +21 TK Single Control (1.8-Vdd), small size package, CMOS +34 – TB High power handling, low insertion loss, high isolation 27 @ 2GHz +27 +30 TK Medium power, small size package 0.40 @ 2GHz 19 @ 2GHz +37 – TB High power handling, low harmonics, lowest cost high power switch +3.0/0 0.4 @ 2.5GHz 0.5 @ 6GHz 35 @ 2.5GHz 30 @ 6GHz – +35 @ 2.5GHz +29 @ 6GHz T5N Highest isolation, great 2.4 and 6GHz performance 6.0 +3.0/0 0.55 @ 3.5GHz 24 @ 3.5GHz – +37 T5N Absorptive, high power and high linearity to 6GHz UPG2214TB1 3.0 +1.8, 3.0/0 0.30 @ 2GHz 27 @ 2GHz +23 +20 (1.8V), 26(3.0V) TB Low insertion loss, high isolation, medium power, 1.8V-5.3V. UPG2214TK1 3.0 +1.8, 3.0/0 0.30 @ 2GHz 27 @ 2GHz +23 +20 (1.8V), 26(3.0V) TK Small size package, low inseriton loss, high isolation, medium power, 1.8V-5.3V. UPG2406TK1 3.0 +1.8, 2.7/0 0.45 @ 2GHz 19 @ 2GHz +29 +25 (1.8V), 30.5 (3.0V) TK Small size package, cost effective medium power, 1.8V-5.3V UPG2408TB1 3.0 +3.0/0 0.48 @ 2GHz 19 @ 2GHz +29 – TB Low cost medium power for UHF3GHz UPG2408TK1 3.0 +3.0/0 0.48 @ 2GHz 19 @ 2GHz +29 – TK Small size package, cost effective medium power UPG2409TB1 3.8 +3.0/0 0.45 @ 2.5GHz 0.60 @ 3.8GHz 26 @ 2.5 GHz 19 @ 3.8GHz +33.5 +35 TB Low Cost high power SPDT, for Access Points to 3.8GHz UPG2409T6X1 6.0 +3.0/0 0.45@ 2.5GHz 0.65@6GHz 30 @ 2.5 GHz 27 @6 GHz +34 +36 T6X High power, for Access Points to 6GHz, 1.5mm QFN package UPG2415TK1 6.0 +3.0/0 0.45 @ 2.5GHz 0.65 @ 6GHz 28 @ 2.5 GHz 26 @6 GHz +31 +34 TK High power handling for Access Points to 6GHz, small size package UPG2415T6X1 6.0 +3.0/0 0.45 @ 2.5GHz 0.55 @ 6GHz 28 @ 2.5 GHz 26 @6 GHz +31 +35 T6X High power handling for Access Points to 6GHz, 1.5mm QFN package UPG2422TK1 6.0 +1.8, 3.0/0 0.35 @ 2.5GHz, 28 @ 2.5GHz +28 @ 2-6GHz 0.55 @ 6GHz 24 @ 6GHz +31 @ 6GHz TK Low cost 6GHz SPDT, medium power, small size package, low inseriton loss, high isolation, 1.8V-5.3V Part Number PLP 3 CKRF2159XS022 – 3.0 +1.8, 3.0/0 0.25 @2.5GHz 27 @2.5GHz +22 +25.5 XS02 Low Cost, Lowest Insertion Loss, small thin package CKRF2185XS022 – 6.0 +1.8, 3.0/0 0.40 @2.5GHz 0.5 @ 6GHz 26 @2.5GHz 25 @ 6GHz +29 +30.5 XS02 Low Cost SPDT specified to 6GHz with a small thin package CKRF2406XS022 – 3.0 +1.8, 3.0/0 0.25 @2.5GHz 17 @2.5GHz +29 +30.5 XS02 Low Cost, Lowest Insertion Loss, small thin package CKRF2179MM262 – 3.0 +1.8, 3.0/0 0.30 @2.5GHz 27 @2.5GHz +28 +31 MM26 Low cost, Low insertion loss, Medium Power SPDT Notes: 1. Manufactured by Renesas Electronics 2. Manufactured by CDK (Chou Denshi Kogyo) , a longtime manufacturing partner for Renesas Electronics. Contact CEL for production status 3. See Product Longevity Program details on page 12 4. See Package Dimensions on page 11 www.cel.com/rf 5 RF Switch ICs continued SP3Ts (Single Pole Triple Throw) TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C) Part Number 1 Insertion Loss (dB) Isolation (dB) Input Power @0.1 dB compression point (dBm) Input Power @1.0 dB compression point (dBm) +1.8, 3.0/0 0.35 @ 2.5GHz 18 @ 2.5GHz +28 +1.8, 3.0/0 0.50 @ 2.5GHz 0.55 @ 6GHz 28 @ 2.5GHz 25 @ 6GHz +28 Frequency (GHz, max) Control Voltages (V) 3.0 CKRF2413XS01 CKRF2430XS01 6.0 Package Code2 Description +31 XS01 Lowest Cost SP3T, Low Insertion Loss +31 XS01 SP3T specified to 6GHz with high isolation Notes: 1. Manufactured by CDK (Chou Denshi Kogyo) , a longtime manufacturing partner for Renesas Electronics. Contact CEL for production status 2. See Package Dimensions on page 11 DPDTs (Double Pole Double Throw) TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C) Frequency (GHz, max) Control Voltages (V) Insertion Loss (dB) Isolation (dB) Input Power @0.1 dB compression point (dBm) Input Power @1.0 dB compression point (dBm) UPG2164T5N 6.0 +3.0/0 0.5 @ 2.4GHz 0.7 @ 5.5GHz 25 @ 2.4GHz 17 @ 5.5GHz – UPG2162T5N 6.0 +3.0/0 0.6 @ 2.4GHz 0 .85 @ 5.5GHz 30 @ 2.4GHz 27 @ 5.5 GHz UPD5738T6N 2.5 +2.8/0 0.8 @ 1GHz 22 @ 1GHz Part Number 1 PLP2 Notes: 1. Manufactured by Renesas Electronics 2. See Product Longevity Program details on page 12 Package Code3 Description +31 +29 T5N Lowest cost, lowest insertion loss DPDT. 6GHz operation. – +31 +29 T5N Best isolation of all DPDTs, up to 6GHz operation +15 +20 T6N Only one control pin, low frequency operation, CMOS, 1.5V-3.6V 3. See Package Dimensions on page 11 GaAs FETs Low Noise GaAs FETs, 1 to 20GHz Part Number 1 Gate PLP2 Length (μm) Typical Specifications @ TA = 25°C Gate Width (μm) Recommended Frequency Range (GHz) Test Frequency (GHz) NF/GA Bias VDS (V) IDS (mA) NFOPT (dB) GA (dB) Power Bias VDS (V) IDS (mA) P1dB (dBm) Package Code3 Package Description NE3503M04 0.2 160 2 to 18 12 2.0 10 0.55 11.5 – – – M04 Plastic SMD NE3508M04 0.6 800 1 to 6 2 2.0 10 0.40 14.0 3.0 30 +18.0 M04 Plastic SMD NE3509M04 0.6 400 1 to 6 2 2.0 10 0.45 17.5 3.0 20 +14.0 M04 Plastic SMD NE3510M04 0.6 280 1 to 6 2 2.0 10 0.35 19.0 3.0 30 +12.0 M04 Plastic SMD NE3511S02 0.2 160 4 to 18 12 2.0 10 0.30 13.5 – – – S02 Micro-X Plastic Micro-X Plastic NE3512S02 0.2 160 4 to 18 12 2.0 10 0.35 13.5 – – – S02 NE3513M04 0.2 160 10 to 14 12 2.0 6 0.45 13.0 – – – M04 Plastic SMD NE3514S02 0.2 160 4 to 20 20 2.0 10 0.75 10.0 – – – S02 Micro-X Plastic NE3515S02 0.2 200 6 to 18 12 2.0 10 0.3 12.5 3.0 25 +14.0 S02 Micro-X Plastic NE3516S02 0.2 160 6 to 18 12 2.0 10 0.35 14.0 – – – S02 Plastic SMD NE3520S03 – 160 10 to 26 20 2.0 10 0.65 13.5 – – – S03 Micro-X Plastic NE3521M04 – – 10 to 26 20 2.0 10 0.85 11 – – – M04 Plastic SMD Notes: 1. Manufactured by Renesas Electronics 6 2. See Product Longevity Program details on page 12 3. See Package Dimensions on page 11 www.cel.com/rf Silicon MOSFET Devices RF Power LD-MOSFETs Typical Specifications @ TC = 25°C Test Conditions POUT (dBm) TYP Linear Gain (dB) TYP Freq (GHz) PIN (dBm) VDS (V) IDSQ (mA) Package Code3 Package Description NE5550234 +33 +32.2 23.5 18.3 0.46 0.90 +15 +17 7.5 7.5 40 40 34 Plastic SMD NE5550279A +33 22.5 0.46 +15 7.5 40 79A Plastic SMD NE5550779A +38.5 +37.4 22 17 0.46 0.90 +25 +27 7.5 7.5 140 140 79A Plastic SMD NE5550979A +39.5 +38.6 22 16 0.46 0.90 +25 +27 7.5 7.5 200 200 79A Plastic SMD +40.0 20.5 0.46 +25 7.5 200 79A Plastic SMD Part Number 1 PLP2 NE5531079A – Notes: 1. Manufactured by Renesas Electronics 2. See Product Longevity Program details on page 12 3. See Package Dimensions on page 11 MOSFET for Microphone Impedance Conversion Part Number 1 NE5820M53 PLP2 Supply Voltage (V) Circuit Current (μA) Input Capacitance (pF) Voltage Gain (dB) Output Noise Voltage (dBV) Total Harmonic Distortion (%) HBM ESD (KV) Package Code3 2 85 1.5 -3 -114 0.1 >8 M53 Notes: 1. Manufactured by Renesas Electronics 2. See Product Longevity Program details on page 12 3. See Package Dimensions on page 11 www.cel.com/rf 7 Silicon Bipolar Transistors Small Signal Silicon Devices NF /GA MAG/MSG TEST f (GHz) VCE (V) ICQ (mA) NF TYP (dB) GA TYP (dB) VCE (V) IC (mA) TYP (dB) fT TYP (GHz) hFE TYP IC MAX (mA) Package Code3 Package Style – 1.0 5 5 1.15 13.5 5 30 15.5 11 140 100 30 SOT-323 NE662M04 2SC5508 2.0 2 5 1.1 16 2 20 20 23 70 35 M04 SOT-343F NE66219 2SC5606 2.0 2 5 1.5 12.0 2 20 14 21 80 35 19 SC-90 NE68018 2SC5013 2.0 6 5 1.8 10.0 1 1 12.5 10 100 35 18 SOT-343 NE68019 2SC5008 2.0 3 5 1.9 9.0 1 1 12.0 8 120 35 19 SC-90 NE68030 2SC4228 2.0 6 5 1.7 9.5 6 10 8.5 10 100 35 30 SOT-323 NE68033 2SC3585 2.0 6 5 1.8 9.0 6 10 8.0 10 100 35 33 SOT-23 NE68039 2SC4095 – 2.0 6 5 1.7 11.0 6 10 9.0 10 100 35 39 SOT-143 – SOT-343 Part Number 1 Equivalent Part Number NE202930 PLP2 NE68118 2SC5012 1.0 2.5 3 1.1 13.0 2.5 3 16.0 9 100 65 18 NE68119 2SC5007 1.0 2.5 3 1.1 12.0 2.5 3 15.5 7 120 65 19 SC-90 NE68130 2SC4227 1.0 8 7 1.5 13.5 8 20 13.0 7 120 65 30 SOT-323 NE68133 2SC3583 1.0 8 7 1.2 13.0 8 20 11.0 9 100 65 33 SOT-23 NE68139 2SC4094 1.0 8 7 1.2 13.5 8 20 15.0 9 100 65 39 SOT-143 NE68518 2SC5015 2.0 2.5 3 1.5 8.5 2.5 3 12.0 12 110 30 18 SOT-343 NE68519 2SC5010 2.0 2.5 3 1.5 7.5 2.5 3 11.0 12 110 30 19 SC-90 NE85618 2SC5011 1.0 2.5 3 1.4 11.0 2.5 3 14.0 6.5 120 100 18 SOT-343 NE85619 2SC5006 1.0 2.5 3 1.5 10.0 2.5 3 13.5 4.5 120 100 19 SC-90 NE85630 2SC4226 1.0 10 7 1.3 12.0 10 20 12.0 4.5 110 100 30 SOT-323 NE85633 2SC3356 1.0 10 7 1.4 9.0 10 20 11.5 7 120 100 33 SOT-23 – – NE85639 2SC4093 1.0 10 7 1.5 13.5 10 20 13.0 7 120 100 39 SOT-143 NE97733 2SA1977 – 1.0 –8 –3 1.5 10.0 –8 –20 12.0 8.5 60 –50 33 SOT-23 NE97833 2SA1978 – 1.0 – 10 –3 2.0 7.0 –10 –15 10.0 5.5 40 –50 33 SOT-23 2SA1977 NE97733 – 1.0 –8 –3 1.5 10.0 –8 –20 12.0 8.5 60 –50 33 SOT-23 2SA1978 NE97833 – 1.0 – 10 –3 2.0 7.0 –10 –15 10.0 5.5 40 –50 33 SOT-23 2SC3356 NE85633 1.0 10 7 1.4 9.0 10 20 11.5 7 120 100 33 SOT-23 2SC3583 NE68133 1.0 8 7 1.2 13.0 8 20 11.0 9 100 65 33 SOT-23 2SC3585 NE68033 2.0 6 5 1.8 9.0 6 10 8.0 10 100 35 33 SOT-23 2SC4093 NE85639 1.0 10 7 1.5 13.5 10 20 13.0 7 120 100 39 SOT-143 2SC4094 NE68139 – 1.0 8 7 1.2 13.5 8 20 15.0 9 100 65 39 SOT-143 2SC4095 NE68039 – 2.0 6 5 1.7 11.0 6 10 9.0 10 100 35 39 SOT-143 2SC4226 NE85630 1.0 10 7 1.3 12.0 10 20 12.0 4.5 110 100 30 SOT-323 2SC4227 NE68130 1.0 8 7 1.5 13.5 8 20 13.0 7 120 65 30 SOT-323 2SC4228 NE68030 2.0 6 5 1.7 9.5 6 10 8.5 10 100 35 30 SOT-323 2SC5006 NE85619 1.0 2.5 3 1.5 10.0 2.5 3 13.5 4.5 120 100 19 SC-90 2SC5007 NE68119 1.0 2.5 3 1.1 12.0 2.5 3 15.5 7 120 65 19 SC-90 2SC5008 NE68019 2.0 3 5 1.9 9.0 1 1 12.0 8 120 35 19 SC-90 2SC5010 NE68519 2.0 2.5 3 1.5 7.5 2.5 3 11.0 12 110 30 19 SC-90 2SC5011 NE85618 – 1.0 2.5 3 1.4 11.0 2.5 3 14.0 6.5 120 100 18 SOT-343 2SC5012 NE68118 – 1.0 2.5 3 1.1 13.0 2.5 3 16.0 9 100 65 18 SOT-343 2SC5013 NE68018 2.0 6 5 1.8 10.0 1 1 12.5 10 100 35 18 SOT-343 2SC5015 NE68518 2.0 2.5 3 1.5 8.5 2.5 3 12.0 12 110 30 18 SOT-343 2SC5508 NE662M04 2.0 2 5 1.1 16 2 20 20 23 70 35 M04 SOT-343F 2SC5606 NE66219 2.0 2 5 1.5 12.0 2 20 14 21 80 35 19 SC-90 Notes: 1. Manufactured by Renesas Electronics 8 2. See Product Longevity Program details on page 12 3. See Package Dimensions on page 11 www.cel.com/rf Silicon Bipolar Transistors continued Medium Power Transistors P1dB TEST f (GHz) VCE (V) ICQ (mA) TYP (dBm) VCE (V) 2SC4536 1.0 12.5 100 27.5 NE461M02 2SC5337 1.0 12.5 100 27.5 NE663M04 2SC5509 NE664M04 2SC5754 NE677M04 2SC5751 NE678M04 NE85634 Part Number 1 Equivalent Part Number NE46134 PLP2 – MAG / MSG IC (mA) TYP (dB) fT TYP (GHz) hFE TYP IC MAX (mA) Package Code3 Package Style 10 50 9 5.5 100 250 34 SOT-89 10 50 11 5.5 120 250 M02 SOT-89 2.0 2 50 16 2 50 15 18 100 100 M04 SOT-343F 1.8 3.6 200 26 3 100 12 20 60 500 M04 SOT-343F 1.8 2.8 23 15 3 20 16 15 120 50 M04 SOT-343F 2SC5753 1.8 2.8 40 18 3 30 13.5 12 120 100 M04 SOT-343F 2SC3357 1.0 10 40 22 10 40 11 6.5 120 100 34 SOT-89 NE856M02 2SC5336 1.0 10 40 22 10 50 14 6.5 120 100 M02 SOT-89 2SC3357 NE85634 1.0 10 40 22 10 40 11 6.5 120 100 34 SOT-89 2SC4536 NE46134 1.0 12.5 100 27.5 10 50 9 5.5 100 250 34 SOT-89 2SC5336 NE856M02 1.0 10 40 22 10 50 14 6.5 120 100 M02 SOT-89 2SC5337 NE461M02 1.0 12.5 100 27.5 10 50 11 5.5 120 250 M02 SOT-89 2SC5509 NE663M04 – 2.0 2 50 16 2 50 15 18 100 100 M04 SOT-343F 2SC5751 NE677M04 – 1.8 2.8 23 15 3 20 16 15 120 50 M04 SOT-343F – 2SC5753 NE678M04 1.8 2.8 40 18 3 30 13.5 12 120 100 M04 SOT-343F 2SC5754 NE664M04 1.8 3.6 200 26 3 100 12 20 60 500 M04 SOT-343F Notes: 1. Manufactured by Renesas Electronics 2. See Product Longevity Program details on page 12 3. See Package Dimensions on page 11 Twin Transistors Part Number 1 PLP2 UPA800T – UPA801T UPA802T – UPA806T TEST NF/GA NF/GA f VCE IC (GHz) (V) (mA) NF TYP (dB) GA TYP (dB) MAG (dB) VCE (V) IC (mA) TYP (dB) fT TYP (GHz) hFE TYP IC MAX (mA) Die Pkg. Code3 Package Style 7.5 8 120 35 2 each NE680 T SOT-363 |S21E | 2.0 3 5 1.9 9.0 12.0 3 5 1.0 3 7 1.2 10.0 14.0 3 7 9.0 4.5 120 100 2 each NE856 T SOT-363 1.0 3 7 1.4 14.0 16.0 3 7 12.0 7.0 100 65 2 each NE681 T SOT-363 2.0 3 3 1.5 7.5 11.0 3 10 8.5 12.0 110 30 2 each NE685 T SOT-363 UPA810T – 1.0 3 7 1.2 10.0 14.0 3 7 9.0 4.5 120 100 2 each NE856 T SOT-363 UPA811T – 2.0 3 5 1.9 9.0 12.0 3 5 7.5 8 120 35 2 each NE680 T SOT-363 Notes: 1. Manufactured by Renesas Electronics 2. See Product Longevity Program details on page 12 3. See Package Dimensions on page 11 www.cel.com/rf 9 Silicon RFICs 3V Silicon MMIC Amplifiers Part Number 6 PLP7 Typical Frequency Range @ 3dB VCC down (V) (MHz) ELECTRICAL CHARACTERISTICS1 (TA = 25°C) NF (dB) ICC (mA) Gain (dB) RLIN (dB) RLOUT P1dB ISOL (dB) (dBm) (dB) Package Code8 Package Style MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP 5 7.5 10 6.0 9 12 14 11 5.5 -3.0 38 TB SOT-363 UPC2745TB 2 2700 3 UPC2746TB 2 1500 3 5 7.5 10 4.0 16 19 21 13 8.5 -3.7 45 TB SOT-363 UPC2748TB 3 1500 3 4.5 6 8 2.8 16 19 21 11.5 8.5 -8.5 40 TB SOT-363 UPC2749TB 4 2900 3 4 6 8 4 13 16 18.5 10 13 -12.5 30 TB SOT-363 UPC2762TB 4 2900 3 – 27 35 7.0 11.5 15.5 17.5 8.5 12 +7 25 TB SOT-363 UPC8178TK4 2700 3 1.4 1.9 2.4 5.5 9.0 11.0 13.5 8 – -8.0 41 TK 6 pin Recessed Lead UPC8179TK 4 Note 5 3 2.9 4.0 5.4 5.0 13.0 15.5 17.5 7 – 0.5 42 TK 6 pin Recessed Lead Notes: 1. ZL = 50 Ω for all Electrical Characteristics 2. f = 500 MHz test condition 3. f = 900 MHz test condition 4. f = 1900 MHz test condition 5. 100 – 2400MHz with output port matching 6. Manufactured by Renesas Electronics 7. See Product Longevity Program details on page 12 8. See Package Dimensions on page 11 5V Silicon MMIC Amplifiers Part Number 4 PLP5 Typical Frequency Range @ 3dB down (MHz) ELECTRICAL CHARACTERISTICS1 (TA = 25°C) VCC (V) ICC (mA) NF (dB) Gain (dB) RLIN (dB) RLOUT (dB) P1dB ISOL (dBm) (dB) MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Package Code6 Package Style UPC2708TB 3 2900 5 20 26 33 6.5 13 15 18.5 11 20 +9.2 23 TB SOT-363 UPC2709TB 3 2300 5 19 25 32 5.0 21 23 26.5 10 10 +8.7 31 TB SOT-363 UPC2710TB 2 1000 5 16 22 29 3.5 30 33 36.5 6 12 +10.8 39 TB SOT-363 UPC3223TB 3 3200 5 15 19 24 4.5 20.5 23 22.5 12 12 +6.5 33 TB SOT-363 UPC3224TB 3200 5 7.0 9.0 12.0 4.3 19 21.5 24 12 17 -3.5 40 TB SOT-363 OIP3 Package Code6 Package Style 3 Notes: 1. ZL = 50 Ω for all Electrical Characteristics 2. f = 500 MHz test condition 3. f = 1000 MHz test condition 4. Manufactured by Renesas Electronics 5. See Product Longevity Program details on page 12 6. See Package Dimensions on page 11 Frequency Upconverters Part Number 4 PLP5 IF Input Frequency Range @3 dB Down (MHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) RF Output Frequency Range (MHz) VCC (V) Conversion Gain (dB) PSAT 1 (dBm) Noise Figure (dB) TYP TYP TYP TYP TYP TYP UPC8106TB 2 50-400 400-2000 3.0 9.0 10.0 -2.0 8.5 +5.5 TB SOT-363 UPC8172TB 50-400 800-2500 3.0 9.0 8.5 0.0 10.4 +6.0 TB SOT-363 3 Notes: 1. PIN = 0 dBm 2. RF = 900 MHz, LO = 660 MHz, PLO = -5 dBm ICC (mA) 5. See Product Longevity Program details on page 12 3. RF = 1900 MHz, LO = 1660 MHz, PLOIN = -5 dBm 6. See Package Dimensions on page 11 4. Manufactured by Renesas Electronics Frequency Downconverters ELECTRICAL CHARACTERISTICS (TA = 25°C) RF Input Frequency Range @3 dB Down (MHz) IF Output Frequency Range @3 dB Down (MHz) UPC2756TB 100-2000 10-300 3.0 UPC2757TB1 100-2000 20-300 3.0 UPC2758TB 1 100-2000 20-300 3.0 UPC8112TB1 800-2000 100-300 3.0 Part Number 2 PLP3 TYP VCC (V) TYP Note: 1. AGC Amp and Mixer Block only 2. Manufactured by Renesas Electronics 10 ICC (mA) Conversion Gain (dB) PSAT (dBm) Noise Figure (dB) TYP TYP TYP TYP 5.9 14 -12 5.6 13 -8 11 17 8.5 13 Test Condition (Note) Package Code4 Package Style 13 3 TB SOT-363 13 4 TB SOT-363 -4 13 4 TB SOT-363 -3 11.2 5 TB SOT-363 3. See Product Longevity Program details on page 12 www.cel.com/rf 4. See Package Dimensions on page 11 Package Dimensions Units in mm These dimensions are for the package only. For detailed dimensions including leads, please refer to the datasheet. 18 Package (1.25 x 2.0 x 0.9) Top View Side View 34 Package (2.5 x 4.5 x 1.5) Top View Side View M04 Package (1.25 x 2.0 x 0.6) Top View Top View Side View Top View Side View 39 Package (1.5 x 2.9 x 1.1) Top View Side View M53 Package (1.0 x 1.2 x 0.33) Top View (1.1 x 1.5 x 0.55) T5N / T6N Package Side View XS02 Package (0.8 x 1.6 x 0.75) Side View Top View TK Package 19 Package Bottom View Top View Side View Side View (1.5 x 1.5 x 0.37) Bottom View 30 Package (1.25 x 2.0 x 0.9) Top View 79A Package Top View (4.2 x 4.4 x 0.9) Side View S02 / S03 Package Top View Bottom View (2.6 x 2.6 x 1.5) Side View T6X Package Top View Side View Side View 33 Package (1.5 x 2.9 x 1.4) Top View Side View M02 Package Top View Side View T / TB / MM26 Package Top View (1.5 x 1.5 x 0.37) XS01 Package Bottom View Top View (2.45 x 4.5 x 1.5) (1.25 x 2.0 x 0.9) Side View (1.5 x 1.5 x 0.37) Side View Bottom View (1.0 x 1.0 x 0.37) Bottom View www.cel.com/rf 11 Product Longevity Program Program Overview California Eastern Laboratories, Inc. is pleased to announce the Product Longevity Program to our customers purchasing Renesas Electronics products. The parts selected for participation in this program are planned to have a long production life cycle. Planned Life Cycle for PLP Products 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 Usual Management (January 2025 onwards) [ supply period is determined by demand and other factors ] PLP ( Until July 2024 ) [ supply is maintained ] Program Details 1. Products participating in this program are expected to have a long product life. 2. A list of the products participating in this program is provided via the link below. 3. The products in this program are clearly identified with the PLP icon . 5. PCN (Product Change Notices) for changes in product specifications, manufacturing facilities, or materials may be issued due to circumstances beyond our control even while this program is in effect. 6. The date of PLP termination is the date that was planned at the point in time when it was officially announced. It is subject to change. 4. Due to various circumstances, in some cases a PLP product may be replaced by an equivalent product that is also in the PLP. For complete PLP Part List and up to date information Please visit us at: www.cel.com/plp 12 www.cel.com/rf CEL Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054 Tel: (408) 919-2500 E-mail: [email protected] Learn more www.cel.com/rf © 2015 California Eastern Laboratories 04.2015 For a complete list of sales offices, representatives and distributors, Please visit our website: www.cel.com/contactus