uPG2418T6X Data Sheet

A Business Partner of Renesas Electronics Corporation.
Preliminary
μPG2418T6X
Data Sheet
GaAs Integrated Circuit
0.5 to 3.0 GHz SPDT Switch with 50 Ω Termination
R09DS0024EJ0100
Rev.1.00
Jul 27, 2011
DESCRIPTION
ED
The μPG2418T6X is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch with 50 Ω termination for
2.4 GHz wireless LAN, mobile phone and other L, S-band applications.
This device operates with dual control switching voltages of 2.5 to 3.3 V. This device can operate at frequencies from
0.5 to 3.0 GHz, with low insertion loss and high isolation.
This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) (T6X) package and is suitable for
high-density surface mounting.
FEATURES
•
•
•
•
: Vcont (H) = 3.0 V TYP.
: Vcont (L) = 0 V TYP.
Low insertion loss
: Lins = 0.45 dB TYP. @ f = 2.5 GHz
High isolation
: ISL = 21 dB TYP. @ f = 2.5 GHz
Handling power
: Pin (0.1 dB) = +29.0 dBm TYP. @ f = 0.5 to 3.0 GHz
High-density surface mounting : 6-pin plastic TSON (T6X) package (1.5 × 1.5 × 0.37 mm)
APPLICATIONS
NT
• W-LAN and BluetoothTM etc.
• L, S-band digital cellular or cordless telephone
IN
U
• Switch control voltage
ORDERING INFORMATION
Part Number
μPG2418T6X-E2
Order Number
Package
Marking
μPG2418T6X-E2-A 6-pin plastic TSON
SC
O
(T6X) (Pb-Free)
G6K
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the
•
tape
Qty 3 kpcs/reel
DI
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPG2418T6X-A
CAUTION
Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this
device. This device must be protected at all times from ESD. Static charges may easily produce potentials of
several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard
ESD precautions must be employed at all times.
R09DS0024EJ0100 Rev.1.00
Jul 27, 2011
Page 1 of 11
A Business Partner of Renesas Electronics Corporation.
μPG2418T6X
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
2
3
G6K
1
(Bottom View)
(Top View)
6
RF1
1
5
GND
2
4
RF2
3
50 Ω
50 Ω
Vcont1
6
6
1
RFC
5
5
2
Vcont2
4
4
3
PinNo.
1
2
3
4
5
6
PinName
RF1
GND
RF2
V cont 2
RFC
V cont 1
ED
(Top View)
Remark Exposed pad : GND
ON Path
RFC-RF1
RFC-RF2
Vcont1
High
Low
Vcont2
Low
High
IN
U
SW TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C,unless otherwise specified)
Note:
⎪Vcont 1 − V cont 2⎪ ≤ 6.0 V
Symbol
V cont
P in
P in
T A
T stg
Ratings
Note
+6.0
+33.0
+20.0
−45 to +85
−55 to +150
Unit
V
dBm
dBm
°C
°C
NT
Parameter
Switch Control Voltage
Input Power (ON Port)
Input Power (OFF Port)
Operating Ambient Temperature
Storage Temperature
RECOMMENDED OPERATING RANGE (T A = +25 °C, unless otherwise specified)
Symbol MIN.
f
0.5
Vcont (H)
2.5
Vcont (L)
−0.2
ΔVcont (H) , −0.1
ΔVcont (L)
SC
O
Parameter
Operating Frequency
Switch Control Voltage (H)
Switch Control Voltage (L)
Control Voltage Difference
TYP.
−
3.0
0
0
MAX.
3.0
3.3
0.2
0.1
Unit
GHz
V
V
V
Note
ΔVcont (H) = V cont 1 (H) − V cont 2 (H)
ΔVcont (L) = V cont 1 (L) − V cont 2 (L)
DI
Note:
R09DS0024EJ0100 Rev.1.00
Jul 27, 2011
Page 2 of 11
A Business Partner of Renesas Electronics Corporation.
μPG2418T6X
ELECTRICAL CHARACTERISTICS
(TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 56 pF,
unless otherwise specified)
0.1 dB Loss Compression
Note1
Input Power
1 dB Loss Compression
Note2
Input Power
Input 3rd Order Intercept Point
2nd Harmonics
3rd Harmonics
Switch Control Current
Switch Control Speed
RLin
RLout
URL
Pin (0.1 dB)
Pin (1 dB)
IIP3
2f0
3f0
Icont
tSW
MIN.
−
−
−
−
19
17
16
15
15
−
12
−
+26.0
−
+29.0
−
−
TYP.
0.30
0.37
0.45
0.50
23
21
20
20
20
15
17
18
+29.0
+29.0
+32.0
+32.0
+60
MAX.
0.50
0.57
0.65
0.70
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
−
−
−
−
75
75
0.3
50
−
−
20
500
dBc
dBc
μA
ns
ED
Input Return Loss
Output Return Loss
Unused Port Return Loss
ISL
Test Conditions
f = 0.5 to 1.0 GHz
f = 1.0 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 2.5 to 3.0 GHz
f = 0.5 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 2.5 to 3.0 GHz
f = 0.5 to 3.0 GHz
f = 0.5 to 3.0 GHz
f = 2.0 to 2.4 GHz
f = 2.4 to 2.5 GHz
f = 2.5 to 3.0 GHz
f = 2.0/2.5 GHz
f = 0.5 to 3.0 GHz
f = 2.0/2.5 GHz
f = 0.5 to 3.0 GHz
f = 0.5 to 3.0 GHz, 2 tone,
5 MHz spicing
f = 2.5 GHz, Pin = +20 dBm
f = 2.5 GHz, Pin = +20 dBm
No RF input
50% CTL to 90/10% RF
IN
U
Isolation
Symbol
Lins
NT
Parameter
Insertion Loss
SC
O
Notes: 1. Pin (0.1 dB) is the measured input power level when the insertion loss increases 0.1 dB more than that of the
linear range.
2. Pin (1 dB) is the measured input power level when the insertion loss increases 1 dB more than that of the linear
range.
CAUTION
DI
It is necessary to use DC blocking capacitors with this device.
The value of DC blocking capacitors should be chosen to accommodate the frequency of operation,
bandwidth, switching speed and the condition with actual board of your system.
R09DS0024EJ0100 Rev.1.00
Jul 27, 2011
Page 3 of 11
A Business Partner of Renesas Electronics Corporation.
μPG2418T6X
EVALUATION CIRCUIT
1 000 pF
C1
1
RF1
Vcont1
6
5
3
RF2
4
C1
RFC
ED
2
C1
Vcont2
Remark C1: 56 pF
IN
U
1 000 pF
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
APPLICATION INFORMATION
Switch
NT
C1
C1
LESD
C1
DI
SC
O
• LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the
antenna.
• The value may be tailored to provide specific electrical responses.
• The RF ground connections should be kept as short as possible and connected to directly to a good RF ground for
best performance.
R09DS0024EJ0100 Rev.1.00
Jul 27, 2011
Page 4 of 11
A Business Partner of Renesas Electronics Corporation.
μPG2418T6X
TYPICAL CHARACTERISTICS
(TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 56 pF,
unless otherwise specified)
RFC-RF1/RF2
INSERTION LOSS vs. FREQUENCY
0
0
−5
−0.2
−0.3
−0.4
−0.5
−25
−30
−35
1.0
1.5
2.0
2.5
IN
U
0.5
−50
0.0
3.0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency f (GHz)
INPUT (RFC) RETURN LOSS
vs. FREQUENCY
Output Return Loss RLout (dB)
−5
0
−10
OUTPUT (RF1/RF2) RETURN LOSS
vs. FREQUENCY
−5
−10
NT
Input Return Loss RLin (dB)
−20
−45
Frequency f (GHz)
−15
−20
−25
−30
−35
SC
O
−40
0.0
−15
−40
−0.6
0
ED
−10
Isolation ISL (dB)
Insertion Loss Lins (dB)
−0.1
−0.7
0.0
RFC-RF1/RF2
ISOLATION vs. FREQUENCY
0.5
1.0
1.5
2.0
2.5
3.0
Frequency f (GHz)
−15
−20
−25
−30
−35
−40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency f (GHz)
RFC-RF1/RF2
UNUSED PORT RETURN LOSS vs. FREQUENCY
−5
−10
−15
−20
DI
Unused Port Return Loss URL (dB)
0
−25
−30
−35
−40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0024EJ0100 Rev.1.00
Jul 27, 2011
Page 5 of 11
A Business Partner of Renesas Electronics Corporation.
μPG2418T6X
0
−5
−0.20
Isolation ISL (dB)
Insertion Loss Lins (dB)
−0.10
f = 2.0 GHz
−0.30
−0.40
−0.50
−0.60
−0.70
2.0
RFC-RF1/RF2 ISOLATION vs.
SWITCH CONTROL VOLTAGE (H)
3.0 GHz
2.5 GHz
−10
−15
3.0 GHz
−20
−25
−30
2.5 GHz
−35
2.5
3.5
3.0
−40
2.0
4.0
−20
−25
−30
−35
−40
2.0
2.5 GHz
2.5
IN
U
3.0 GHz
−15
f = 2.0 GHz
3.0
3.5
4.0
0
−5
−10
4.0
Switch Control Voltage (H) Vcont (H) (V)
3.0 GHz
−15
−20
−25
NT
Input Return Loss RLin (dB)
−10
3.5
3.0
OUTPUT (RF1/RF2) RETURN LOSS
vs. SWITCH CONTROL VOLTAGE (H)
Output Return Loss RLout (dB)
INPUT (RFC) RETURN LOSS
vs. SWITCH CONTROL VOLTAGE (H)
−5
2.5
f = 2.0 GHz
Switch Control Voltage (H) Vcont (H) (V)
Switch Control Voltage (H) Vcont (H) (V)
0
ED
0.00
RFC-RF1/RF2 INSERTION LOSS,
vs. SWITCH CONTROL VOLTAGE (H)
−30
−35
−40
2.0
f = 2.0 GHz
2.5 GHz
2.5
3.0
3.5
4.0
Switch Control Voltage (H) Vcont (H) (V)
SC
O
RFC-RF1/RF2 UNUSED PORT RETURN LOSS
vs. SWITCH CONTROL VOLTAGE (H)
−5
f = 2.0 GHz
−10
−15
−20
−25
−30
−35
2.5 GHz
DI
Unused Port Return Loss URL (dB)
0
−40
2.0
2.5
3.0 GHz
3.0
3.5
4.0
Switch Control Voltage (H) Vcont (H) (V)
Remark The graphs indicate nominal characteristics.
R09DS0024EJ0100 Rev.1.00
Jul 27, 2011
Page 6 of 11
A Business Partner of Renesas Electronics Corporation.
μPG2418T6X
RFC-RF1/RF2
INSERTION LOSS, Icont vs. INPUT POWER
0
40
−1.0
2.5 GHz
f = 2.0 GHz
−1.5
30
20
−2.0
f = 2.0 GHz
−2.5
2.5 GHz 10
Icont
−3.0
20
25
0
35
30
−20
−30
3f0
−40
−50
−60
2f0
−70
−80
−90
−100
20
3.5 V
−1.5
Vcont = 2.3 V
−3.0
20
RFC-RF1/RF2 Pin (1 dB), Pin (0.1 dB)
vs. SWITCH CONTROL VOLTAGE (H)
15
10
35
34
3.0 V
3.5 V
Icont
25
30
3.0 V
2.3 V
5
0
35
Input Power Pin (dBm)
2.5 GHz
33
32
31
Pin (1 dB)
2.5 GHz
30
29
27
26
f = 2.0 GHz
f = 2.0 GHz
28
NT
Insertion Loss Lins (dB)
20
−1.0
0.1 dB Loss Compression Input Power Pin (0.1 dB) (dBm)
25
−0.5
Switch Control Current Icont (μ A)
30
f = 2.5 GHz
−2.5
35
30
IN
U
RFC-RF1/RF2
INSERTION LOSS, Icont vs. INPUT POWER
−2.0
25
Input Power Pin (dBm)
Input Power Pin (dBm)
0
ED
50
Lins
f = 2.5 GHz
−10
2nd Harmonics 2f0 (dBc)
3rd Harmonics 3f0 (dBc)
−0.5
Insertion Loss Lins (dB)
RFC-RF1/RF2 2f0, 3f0 vs. INPUT POWER
60
Switch Control Current Icont (μ A)
0
Pin (0.1 dB)
25
24
2.0
2.5
3.0
3.5
4.0
Switch Control Voltage (H) Vcont (H) (V)
60
50
40
Pout
30
20
10
0
–10
–20
–30
–40
IM3
–50
–60
–70
15 20 25 30
DI
Output Power Pout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
SC
O
RFC-RF1/RF2
OUTPUT POWER, IM3 vs. INPUT POWER
35
40
45
f = 2.5 GHz
50 55 60 65
Input Power Pin (1Tone) (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0024EJ0100 Rev.1.00
Jul 27, 2011
Page 7 of 11
A Business Partner of Renesas Electronics Corporation.
μPG2418T6X
MOUNTING PAD AND SOLDER MASK LAYOUT DIMENSIONS
6-PIN PLASTIC TSON (UNIT: mm)
MOUNTING PAD
0.3
0.5
IN
U
0.2
0.5
1.0
0.3
ED
0.3
0.5
0.3
SOLDER MASK
0.15
0.5
SC
O
0.55
0.5
0.475
0.35
0.25
NT
0.475
0.25
Solder thickness : 0.08 mm
The mounting pad and solder mask layouts in this document are for reference only.
When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder
bridge and so on, in order to optimize the design.
DI
Remark
R09DS0024EJ0100 Rev.1.00
Jul 27, 2011
Page 8 of 11
A Business Partner of Renesas Electronics Corporation.
μPG2418T6X
PACKAGE DIMENSIONS
6-PIN PLASTIC TSON (T6X) (UNIT: mm)
(Top View)
(Bottom View)
(Side View)
0.3±0.07
1.5±0.1
0.37+0.03
–0.05
1.2±0.1
ED
A
0.08 MIN.
0.2+0.07
–0.05
IN
U
A
1.5±0.1
0.5±0.06
(0.24)
0.2±0.1
0.7±0.1
DI
SC
O
NT
Remark A>0
( ) : Reference value
R09DS0024EJ0100 Rev.1.00
Jul 27, 2011
Page 9 of 11
A Business Partner of Renesas Electronics Corporation.
μPG2418T6X
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Partial Heating
Soldering Conditions
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2%(Wt.) or below
Condition Symbol
IR260
ED
Soldering Method
Infrared Reflow
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
CAUTION
HS350
DI
SC
O
NT
IN
U
Do not use different soldering methods together (except for partial heating).
R09DS0024EJ0100 Rev.1.00
Jul 27, 2011
Page 10 of 11
A Business Partner of Renesas Electronics Corporation.
μPG2418T6X
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
ED
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
DI
SC
O
NT
IN
U
• Do not lick the product or in any way allow it to enter the mouth.
R09DS0024EJ0100 Rev.1.00
Jul 27, 2011
Page 11 of 11
μPG2418T6X Data Sheet
Revision History
Rev.
Jul 27, 2011
Description
Summary
Page
−
First edition issued
DI
SC
O
NT
IN
U
ED
1.00
Date
Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A.
All trademarks and registered trademarks are the property of their respective owners.
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