A Business Partner of Renesas Electronics Corporation. Preliminary μPG2418T6X Data Sheet GaAs Integrated Circuit 0.5 to 3.0 GHz SPDT Switch with 50 Ω Termination R09DS0024EJ0100 Rev.1.00 Jul 27, 2011 DESCRIPTION ED The μPG2418T6X is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch with 50 Ω termination for 2.4 GHz wireless LAN, mobile phone and other L, S-band applications. This device operates with dual control switching voltages of 2.5 to 3.3 V. This device can operate at frequencies from 0.5 to 3.0 GHz, with low insertion loss and high isolation. This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) (T6X) package and is suitable for high-density surface mounting. FEATURES • • • • : Vcont (H) = 3.0 V TYP. : Vcont (L) = 0 V TYP. Low insertion loss : Lins = 0.45 dB TYP. @ f = 2.5 GHz High isolation : ISL = 21 dB TYP. @ f = 2.5 GHz Handling power : Pin (0.1 dB) = +29.0 dBm TYP. @ f = 0.5 to 3.0 GHz High-density surface mounting : 6-pin plastic TSON (T6X) package (1.5 × 1.5 × 0.37 mm) APPLICATIONS NT • W-LAN and BluetoothTM etc. • L, S-band digital cellular or cordless telephone IN U • Switch control voltage ORDERING INFORMATION Part Number μPG2418T6X-E2 Order Number Package Marking μPG2418T6X-E2-A 6-pin plastic TSON SC O (T6X) (Pb-Free) G6K Supplying Form • Embossed tape 8 mm wide • Pin 1, 6 face the perforation side of the • tape Qty 3 kpcs/reel DI Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μPG2418T6X-A CAUTION Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. R09DS0024EJ0100 Rev.1.00 Jul 27, 2011 Page 1 of 11 A Business Partner of Renesas Electronics Corporation. μPG2418T6X PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM 2 3 G6K 1 (Bottom View) (Top View) 6 RF1 1 5 GND 2 4 RF2 3 50 Ω 50 Ω Vcont1 6 6 1 RFC 5 5 2 Vcont2 4 4 3 PinNo. 1 2 3 4 5 6 PinName RF1 GND RF2 V cont 2 RFC V cont 1 ED (Top View) Remark Exposed pad : GND ON Path RFC-RF1 RFC-RF2 Vcont1 High Low Vcont2 Low High IN U SW TRUTH TABLE ABSOLUTE MAXIMUM RATINGS (TA = +25 °C,unless otherwise specified) Note: ⎪Vcont 1 − V cont 2⎪ ≤ 6.0 V Symbol V cont P in P in T A T stg Ratings Note +6.0 +33.0 +20.0 −45 to +85 −55 to +150 Unit V dBm dBm °C °C NT Parameter Switch Control Voltage Input Power (ON Port) Input Power (OFF Port) Operating Ambient Temperature Storage Temperature RECOMMENDED OPERATING RANGE (T A = +25 °C, unless otherwise specified) Symbol MIN. f 0.5 Vcont (H) 2.5 Vcont (L) −0.2 ΔVcont (H) , −0.1 ΔVcont (L) SC O Parameter Operating Frequency Switch Control Voltage (H) Switch Control Voltage (L) Control Voltage Difference TYP. − 3.0 0 0 MAX. 3.0 3.3 0.2 0.1 Unit GHz V V V Note ΔVcont (H) = V cont 1 (H) − V cont 2 (H) ΔVcont (L) = V cont 1 (L) − V cont 2 (L) DI Note: R09DS0024EJ0100 Rev.1.00 Jul 27, 2011 Page 2 of 11 A Business Partner of Renesas Electronics Corporation. μPG2418T6X ELECTRICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 56 pF, unless otherwise specified) 0.1 dB Loss Compression Note1 Input Power 1 dB Loss Compression Note2 Input Power Input 3rd Order Intercept Point 2nd Harmonics 3rd Harmonics Switch Control Current Switch Control Speed RLin RLout URL Pin (0.1 dB) Pin (1 dB) IIP3 2f0 3f0 Icont tSW MIN. − − − − 19 17 16 15 15 − 12 − +26.0 − +29.0 − − TYP. 0.30 0.37 0.45 0.50 23 21 20 20 20 15 17 18 +29.0 +29.0 +32.0 +32.0 +60 MAX. 0.50 0.57 0.65 0.70 − − − − − − − − − − − − − Unit dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm − − − − 75 75 0.3 50 − − 20 500 dBc dBc μA ns ED Input Return Loss Output Return Loss Unused Port Return Loss ISL Test Conditions f = 0.5 to 1.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 3.0 GHz f = 0.5 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 3.0 GHz f = 0.5 to 3.0 GHz f = 0.5 to 3.0 GHz f = 2.0 to 2.4 GHz f = 2.4 to 2.5 GHz f = 2.5 to 3.0 GHz f = 2.0/2.5 GHz f = 0.5 to 3.0 GHz f = 2.0/2.5 GHz f = 0.5 to 3.0 GHz f = 0.5 to 3.0 GHz, 2 tone, 5 MHz spicing f = 2.5 GHz, Pin = +20 dBm f = 2.5 GHz, Pin = +20 dBm No RF input 50% CTL to 90/10% RF IN U Isolation Symbol Lins NT Parameter Insertion Loss SC O Notes: 1. Pin (0.1 dB) is the measured input power level when the insertion loss increases 0.1 dB more than that of the linear range. 2. Pin (1 dB) is the measured input power level when the insertion loss increases 1 dB more than that of the linear range. CAUTION DI It is necessary to use DC blocking capacitors with this device. The value of DC blocking capacitors should be chosen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. R09DS0024EJ0100 Rev.1.00 Jul 27, 2011 Page 3 of 11 A Business Partner of Renesas Electronics Corporation. μPG2418T6X EVALUATION CIRCUIT 1 000 pF C1 1 RF1 Vcont1 6 5 3 RF2 4 C1 RFC ED 2 C1 Vcont2 Remark C1: 56 pF IN U 1 000 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. APPLICATION INFORMATION Switch NT C1 C1 LESD C1 DI SC O • LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the antenna. • The value may be tailored to provide specific electrical responses. • The RF ground connections should be kept as short as possible and connected to directly to a good RF ground for best performance. R09DS0024EJ0100 Rev.1.00 Jul 27, 2011 Page 4 of 11 A Business Partner of Renesas Electronics Corporation. μPG2418T6X TYPICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 56 pF, unless otherwise specified) RFC-RF1/RF2 INSERTION LOSS vs. FREQUENCY 0 0 −5 −0.2 −0.3 −0.4 −0.5 −25 −30 −35 1.0 1.5 2.0 2.5 IN U 0.5 −50 0.0 3.0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency f (GHz) INPUT (RFC) RETURN LOSS vs. FREQUENCY Output Return Loss RLout (dB) −5 0 −10 OUTPUT (RF1/RF2) RETURN LOSS vs. FREQUENCY −5 −10 NT Input Return Loss RLin (dB) −20 −45 Frequency f (GHz) −15 −20 −25 −30 −35 SC O −40 0.0 −15 −40 −0.6 0 ED −10 Isolation ISL (dB) Insertion Loss Lins (dB) −0.1 −0.7 0.0 RFC-RF1/RF2 ISOLATION vs. FREQUENCY 0.5 1.0 1.5 2.0 2.5 3.0 Frequency f (GHz) −15 −20 −25 −30 −35 −40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency f (GHz) RFC-RF1/RF2 UNUSED PORT RETURN LOSS vs. FREQUENCY −5 −10 −15 −20 DI Unused Port Return Loss URL (dB) 0 −25 −30 −35 −40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency f (GHz) Remark The graphs indicate nominal characteristics. R09DS0024EJ0100 Rev.1.00 Jul 27, 2011 Page 5 of 11 A Business Partner of Renesas Electronics Corporation. μPG2418T6X 0 −5 −0.20 Isolation ISL (dB) Insertion Loss Lins (dB) −0.10 f = 2.0 GHz −0.30 −0.40 −0.50 −0.60 −0.70 2.0 RFC-RF1/RF2 ISOLATION vs. SWITCH CONTROL VOLTAGE (H) 3.0 GHz 2.5 GHz −10 −15 3.0 GHz −20 −25 −30 2.5 GHz −35 2.5 3.5 3.0 −40 2.0 4.0 −20 −25 −30 −35 −40 2.0 2.5 GHz 2.5 IN U 3.0 GHz −15 f = 2.0 GHz 3.0 3.5 4.0 0 −5 −10 4.0 Switch Control Voltage (H) Vcont (H) (V) 3.0 GHz −15 −20 −25 NT Input Return Loss RLin (dB) −10 3.5 3.0 OUTPUT (RF1/RF2) RETURN LOSS vs. SWITCH CONTROL VOLTAGE (H) Output Return Loss RLout (dB) INPUT (RFC) RETURN LOSS vs. SWITCH CONTROL VOLTAGE (H) −5 2.5 f = 2.0 GHz Switch Control Voltage (H) Vcont (H) (V) Switch Control Voltage (H) Vcont (H) (V) 0 ED 0.00 RFC-RF1/RF2 INSERTION LOSS, vs. SWITCH CONTROL VOLTAGE (H) −30 −35 −40 2.0 f = 2.0 GHz 2.5 GHz 2.5 3.0 3.5 4.0 Switch Control Voltage (H) Vcont (H) (V) SC O RFC-RF1/RF2 UNUSED PORT RETURN LOSS vs. SWITCH CONTROL VOLTAGE (H) −5 f = 2.0 GHz −10 −15 −20 −25 −30 −35 2.5 GHz DI Unused Port Return Loss URL (dB) 0 −40 2.0 2.5 3.0 GHz 3.0 3.5 4.0 Switch Control Voltage (H) Vcont (H) (V) Remark The graphs indicate nominal characteristics. R09DS0024EJ0100 Rev.1.00 Jul 27, 2011 Page 6 of 11 A Business Partner of Renesas Electronics Corporation. μPG2418T6X RFC-RF1/RF2 INSERTION LOSS, Icont vs. INPUT POWER 0 40 −1.0 2.5 GHz f = 2.0 GHz −1.5 30 20 −2.0 f = 2.0 GHz −2.5 2.5 GHz 10 Icont −3.0 20 25 0 35 30 −20 −30 3f0 −40 −50 −60 2f0 −70 −80 −90 −100 20 3.5 V −1.5 Vcont = 2.3 V −3.0 20 RFC-RF1/RF2 Pin (1 dB), Pin (0.1 dB) vs. SWITCH CONTROL VOLTAGE (H) 15 10 35 34 3.0 V 3.5 V Icont 25 30 3.0 V 2.3 V 5 0 35 Input Power Pin (dBm) 2.5 GHz 33 32 31 Pin (1 dB) 2.5 GHz 30 29 27 26 f = 2.0 GHz f = 2.0 GHz 28 NT Insertion Loss Lins (dB) 20 −1.0 0.1 dB Loss Compression Input Power Pin (0.1 dB) (dBm) 25 −0.5 Switch Control Current Icont (μ A) 30 f = 2.5 GHz −2.5 35 30 IN U RFC-RF1/RF2 INSERTION LOSS, Icont vs. INPUT POWER −2.0 25 Input Power Pin (dBm) Input Power Pin (dBm) 0 ED 50 Lins f = 2.5 GHz −10 2nd Harmonics 2f0 (dBc) 3rd Harmonics 3f0 (dBc) −0.5 Insertion Loss Lins (dB) RFC-RF1/RF2 2f0, 3f0 vs. INPUT POWER 60 Switch Control Current Icont (μ A) 0 Pin (0.1 dB) 25 24 2.0 2.5 3.0 3.5 4.0 Switch Control Voltage (H) Vcont (H) (V) 60 50 40 Pout 30 20 10 0 –10 –20 –30 –40 IM3 –50 –60 –70 15 20 25 30 DI Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) SC O RFC-RF1/RF2 OUTPUT POWER, IM3 vs. INPUT POWER 35 40 45 f = 2.5 GHz 50 55 60 65 Input Power Pin (1Tone) (dBm) Remark The graphs indicate nominal characteristics. R09DS0024EJ0100 Rev.1.00 Jul 27, 2011 Page 7 of 11 A Business Partner of Renesas Electronics Corporation. μPG2418T6X MOUNTING PAD AND SOLDER MASK LAYOUT DIMENSIONS 6-PIN PLASTIC TSON (UNIT: mm) MOUNTING PAD 0.3 0.5 IN U 0.2 0.5 1.0 0.3 ED 0.3 0.5 0.3 SOLDER MASK 0.15 0.5 SC O 0.55 0.5 0.475 0.35 0.25 NT 0.475 0.25 Solder thickness : 0.08 mm The mounting pad and solder mask layouts in this document are for reference only. When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder bridge and so on, in order to optimize the design. DI Remark R09DS0024EJ0100 Rev.1.00 Jul 27, 2011 Page 8 of 11 A Business Partner of Renesas Electronics Corporation. μPG2418T6X PACKAGE DIMENSIONS 6-PIN PLASTIC TSON (T6X) (UNIT: mm) (Top View) (Bottom View) (Side View) 0.3±0.07 1.5±0.1 0.37+0.03 –0.05 1.2±0.1 ED A 0.08 MIN. 0.2+0.07 –0.05 IN U A 1.5±0.1 0.5±0.06 (0.24) 0.2±0.1 0.7±0.1 DI SC O NT Remark A>0 ( ) : Reference value R09DS0024EJ0100 Rev.1.00 Jul 27, 2011 Page 9 of 11 A Business Partner of Renesas Electronics Corporation. μPG2418T6X RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Partial Heating Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below Condition Symbol IR260 ED Soldering Method Infrared Reflow Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below CAUTION HS350 DI SC O NT IN U Do not use different soldering methods together (except for partial heating). R09DS0024EJ0100 Rev.1.00 Jul 27, 2011 Page 10 of 11 A Business Partner of Renesas Electronics Corporation. μPG2418T6X Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. ED • Do not burn, destroy, cut, crush, or chemically dissolve the product. DI SC O NT IN U • Do not lick the product or in any way allow it to enter the mouth. R09DS0024EJ0100 Rev.1.00 Jul 27, 2011 Page 11 of 11 μPG2418T6X Data Sheet Revision History Rev. Jul 27, 2011 Description Summary Page − First edition issued DI SC O NT IN U ED 1.00 Date Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. All trademarks and registered trademarks are the property of their respective owners. C-1