DMG1016UDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device RDS(ON) ID TA = +25°C • Low On-Resistance 0.45Ω @ VGS = 4.5V 1066mA • Low Gate Threshold Voltage 0.75Ω @ VGS = -4.5V -845mA • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Complementary Pair MOSFET • Ultra-Small Surface Mount Package V(BR)DSS Q1 20V Q2 Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • • • • ESD Protected Up to 2.5kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability Mechanical Data Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, • Memories, Transistors, etc. • Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Power Supply Converter Circuits • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 • Terminal Connections: See Diagram • Weight: 0.006 grams (approximate) D1 G2 S2 Q2 Q1 S1 G1 D2 ESD PROTECTED Top View Internal Schematic Top View Ordering Information (Note 4) Part Number DMG1016UDW-7 DMG1016UDWQ-7 Notes: Compliance Standard Automotive Case SOT363 SOT363 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. CA1 Date Code Key Year Code Month Code 2008 V Jan 1 CA1 2009 W Feb 2 DMG1016UDW Document number: DS31860 Rev. 6 - 2 2010 X Mar 3 Apr 4 YM Marking Information YM NEW PRODUCT Features and Benefits CA1 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) 2011 Y May 5 2012 Z Jun 6 1 of 9 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 2015 C Oct O 2016 D Nov N Dec D January 2014 © Diodes Incorporated DMG1016UDW Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value PD 330 mW RθJA 379 °C/W TJ, TSTG -55 to +150 °C Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) NEW PRODUCT Operating and Storage Temperature Range Units Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) Steady State TA = +25°C TA = +85°C Symbol Value Units VDSS 20 V VGSS ±6 V ID 1066 690 mA Units Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS -20 V Gate-Source Voltage VGSS ±6 V ID -845 -548 mA Continuous Drain Current (Note 5) Steady State TA = +25°C TA = +85°C Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit BVDSS 20 — — V Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage @TC = +25°C VGS = 0V, ID = 250μA IDSS — — 100 nA VDS =20V, VGS = 0V IGSS — — ±1.0 μA VGS = ±4.5V, VDS = 0V VGS(th) 0.5 — 1.0 V VDS = VGS, ID = 250μA — 0.3 0.45 0.4 0.6 Ω VGS = 2.5V, ID = 500mA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) VGS = 4.5V, ID = 600mA 0.5 0.75 |Yfs| — 1.4 — S VDS = 10V, ID = 400mA VSD — 0.7 1.2 V VGS = 0V, IS = 150mA Input Capacitance Ciss — 60.67 — pF Output Capacitance Coss — 9.68 — pF Reverse Transfer Capacitance Crss — 5.37 — pF Total Gate Charge (4.5V) Qg — 736.6 — nC Gate-Source Charge Qgs — 93.6 — nC Gate-Drain Charge Qgd — 116.6 — nC Turn-On Delay Time tD(on) — 5.1 — ns Turn-On Rise Time tr — 7.4 — ns Turn-Off Delay Time tD(off) — 26.7 — ns tf — 12.3 — ns Forward Transfer Admittance Diode Forward Voltage (Note 6) VGS = 1.8V, ID = 350mA DYNAMIC CHARACTERISTICS (Note 7) Turn-Off Fall Time Notes: VDS = 10V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMG1016UDW Document number: DS31860 Rev. 6 - 2 2 of 9 www.diodes.com January 2014 © Diodes Incorporated DMG1016UDW N-CHANNEL – Q1 1.0 1.0 VGS = 8.0V VGS = 4.5V 0.8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.0V 0.6 VGS = 2.5V VGS = 2.0V 0.4 VGS = 1.5V 0.2 0.6 0.4 TA = 150°C 0.2 TA = 125°C VGS = 1.2V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0.8 0.7 0.6 0.5 0.4 VGS = 1.8V 0.3 VGS = 2.5V VGS = 4.5V 0.2 0.1 0 0 TA = 85°C TA = 25°C RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = -55°C 0 0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 2 0.5 TA = 150°C 0.4 T A = 125°C TA = 85°C 0.3 TA = 25°C 0.2 TA = -55°C 0.1 1.0 1.7 0 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.0 0.8 1.5 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 0.8 1.3 1.1 0.9 VGS = 4.5V ID = 500mA 0.6 VGS = 2.5V ID = 250mA 0.4 VGS = 4.5V ID = 500mA 0.2 VGS = 2.5V ID = 250mA 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG1016UDW Document number: DS31860 Rev. 6 - 2 3 of 9 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature January 2014 © Diodes Incorporated DMG1016UDW N-CHANNEL – Q1 (cont.) IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 1.2 0.8 ID = 1mA ID = 250µA 0.4 0.8 TA = 25°C 0.6 0.4 0.2 0 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 100 TA = 150°C 10 IDSS, LEAKAGE CURRENT (nA) Ciss C, CAPACITANCE (pF) Coss C rss 100 TA = 125°C T A = 85°C 10 TA = 25°C 1 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0 1 20 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) 20 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1.6 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 260°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 /t2 D = 0.005 D = Single Pulse 0.001 0.00001 DMG1016UDW Document number: DS31860 Rev. 6 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 4 of 9 www.diodes.com 10 100 1,000 January 2014 © Diodes Incorporated DMG1016UDW Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage NEW PRODUCT Zero Gate Voltage Drain Current Gate-Source Leakage @Tc = +25°C Symbol Min Typ Max Unit Test Condition BVDSS -20 — — V IDSS — — -100 nA VDS = -20V, VGS = 0V IGSS — — ±2.0 μA VGS = ±4.5V, VDS = 0V VGS(th) -0.5 — -1.0 V VDS = VGS, ID = -250μA — 0.5 0.75 0.7 1.05 1.0 1.5 VGS = 0V, ID = -250μA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance RDS (ON) VGS = -4.5V, ID = -430mA Ω VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA Forward Transfer Admittance |Yfs| — 0.9 — S VDS = -10V, ID = -250mA Diode Forward Voltage (Note 6) VSD — -0.8 -1.2 V VGS = 0V, IS = -150mA Input Capacitance Ciss — 59.76 — pF Output Capacitance Coss — 12.07 — pF Reverse Transfer Capacitance Crss — 6.36 — pF Total Gate Charge (4.5V) Qg — 622.4 — pC Gate-Source Charge Qgs — 100.3 — pC Gate-Drain Charge Qgd — 132.2 — pC Turn-On Delay Time tD(on) — 5.1 — ns Turn-On Rise Time tr — 8.1 — ns Turn-Off Delay Time tD(off) — 28.4 — ns tf — 20.72 — ns DYNAMIC CHARACTERISTICS (Note 7) Turn-Off Fall Time Notes: VDS = -16V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -250mA VDS = -10V, VGS = -4.5V, RG = 10Ω, RL = 47Ω 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing DMG1016UDW Document number: DS31860 Rev. 6 - 2 5 of 9 www.diodes.com January 2014 © Diodes Incorporated DMG1016UDW P-CHANNEL – Q2 1.0 VGS = -8.0V 1.0 VGS = -4.5V VDS = -5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -3.0V 0.6 VGS = -2.5V VGS = -2.0V 0.4 0.2 VGS = -1.5V 0.8 0.6 0.4 T A = 150°C 0.2 TA = 125°C TA = 85°C TA = 25°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristic 1.6 1.4 1.2 VGS = -1.8V 1.0 0.8 VGS = -2.5V 0.6 0.4 VGS = -4.5V 0.2 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage 1.0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) 1.7 1.5 1.3 1.1 0.9 VGS = -4.5V ID = -500mA VGS = -2.5V ID = -250mA 0.7 0.5 -50 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 0.8 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 16 On-Resistance Variation with Temperature DMG1016UDW Document number: DS31860 Rev. 6 - 2 6 of 9 www.diodes.com TA = -55°C 0 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 13 Typical Transfer Characteristic 3.0 1.0 VGS = -4.5V 0.8 TA = 150°C TA = 125°C 0.6 T A = 85°C TA = 25°C 0.4 TA = -55°C 0.2 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and Temperature 1.0 1.0 0.8 VGS = -2.5V ID = -250mA 0.6 VGS = -4.5V ID = -500mA 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 17 On-Resistance Variation with Temperature January 2014 © Diodes Incorporated DMG1016UDW P-CHANNEL – Q2 (cont.) 1.0 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 ID = -1mA 0.8 ID = -250µA 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature 0.8 TA = 25°C 0.6 0.4 0.2 0 0.2 100 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs. Current 1,000 T A = 150°C -IDSS, LEAKAGE CURRENT (nA) Ciss C, CAPACITANCE (pF) Coss 10 Crss TA = 125°C 100 10 TA = 85°C T A = 25°C 1 1 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Total Capacitance 20 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Leakage Current vs. Drain-Source Voltage 20 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1.6 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA R θJA = 260°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMG1016UDW Document number: DS31860 Rev. 6 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 22 Transient Thermal Response 7 of 9 www.diodes.com 10 100 1,000 January 2014 © Diodes Incorporated DMG1016UDW Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. NEW PRODUCT A SOT363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DMG1016UDW Document number: DS31860 Rev. 6 - 2 8 of 9 www.diodes.com January 2014 © Diodes Incorporated DMG1016UDW IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com DMG1016UDW Document number: DS31860 Rev. 6 - 2 9 of 9 www.diodes.com January 2014 © Diodes Incorporated