DIODES DMC2038LVTQ-7

DMC2038LVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Device
V(BR)DSS
Q1
20V
Q2
-20V
Features
•
•
•
•
•
•
•
•
ID
TA = 25°C
4.5A
3.5A
3.1A
2.0A
RDS(ON)
35mΩ @ VGS = 4.5V
56mΩ @ VGS = 1.8V
74mΩ @ VGS = -4.5V
168mΩ @ VGS = -1.8V
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Applications
•
•
•
•
•
•
Motor control
Power Management Functions
DC-DC Converters
Backlighting
•
•
Case: TSOT26
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections Indicator: See diagram
Weight: 0.013 grams (approximate)
•
•
Q1
Q2
D1
TSOT26
G1
1
6
D1
S2
2
5
S1
G2
3
4
D2
G1
Top View
Pin Configuration
Top View
D2
G2
S1
S2
N-Channel
P-Channel
Ordering Information (Note 4)
Part Number
DMC2038LVT-7
DMC2038LVTQ-7
Notes:
Qualification
Commercial
Automotive
Case
TSOT26
TSOT26
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
31C
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb
2
DMC2038LVT
Document number: DS35417 Rev. 4 - 2
Mar
3
31C = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
YM
NEW PRODUCT
Product Summary
2012
Z
Apr
4
May
5
2013
A
Jun
6
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2014
B
Jul
7
Aug
8
2015
C
Sep
9
Oct
O
2016
D
Nov
N
Dec
D
September 2012
© Diodes Incorporated
DMC2038LVT
Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
ID
Value
20
±12
3.7
3.0
ID
4.1
3.2
A
ID
4.5
3.6
A
ID
IS
IDM
5.2
4.2
1.5
25
Units
V
V
A
A
A
A
Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
ID
Value
-20
±12
2.6
2.1
ID
2.9
2.4
A
ID
3.1
2.5
A
ID
IS
IDM
3.8
3.0
-1.5
-17
Units
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Symbol
TA = +25°C
TA = +70°C
Steady State
t<10s
TA = +25°C
TA = +70°C
Steady State
t<10s
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Notes:
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.8
0.5
168
120
1.1
0.7
114
72
39
-55 to 150
Units
W
°C/W
W
°C/W
°C
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMC2038LVT
Document number: DS35417 Rev. 4 - 2
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DMC2038LVT
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @Tc = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
1.0
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS =16V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
27
33
43
9
-
1.0
35
43
56
1.1
V
Static Drain-Source On-Resistance
0.4
0.4
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 4.0A
VGS = 2.5V, ID = 2.5A
VGS = 1.8V, ID = 1.5A
VDS = 5V, ID = 3.4A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
400
70
65
1.9
5.7
12
0.7
1.4
5
8
25
8
530
90
100
17
10
16
40
16
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V,ID = 5.8A
VDS = 10V, VGS = 4.5V,
RG = 6Ω, IDS = 1A,
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
30
20
VGS=10V
TA = -55°C
VDS= 5.0V
VGS=4.5V
25
TA = 85°C
VGS =3.0V
VGS =4.0V
20
VGS =3.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
VGS =2.5V
15
VGS=2.0V
10
TA = 150°C
15
TA = 25°C
TA = 125°C
10
5
5
VGS=1.5V
0
0
0.5
1
1.5
0
2
VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
DMC2038LVT
Document number: DS35417 Rev. 4 - 2
0
0.5
1
1.5
2
2.5
3
VGS, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
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RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω)
0.07
0.06
0.05
VGS = 1.8V
0.04
VGS = 2.5V
0.03
VGS = 4.5V
0.02
0.01
0
0
5
10
15
ID, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.7
1.5
1.3
1.1
0.9
0.7
-25
0
25
50
75
100
125
0.08
VGS= 4.5V
TA = 150°C
0.06
TA = 125 °C
0.04
TA = 85°C
TA = 25°C
0.02
TA = -55°C
0
20
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Normalized)
RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω)
0.08
0.5
-50
0
4
8
12
16
ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.06
VGS=5V
ID=5A
0.05
0.04
0.03
VGS=10V
ID=10A
0.02
0.01
0
-50
150
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
20
1.5
18
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE(V)
NEW PRODUCT
DMC2038LVT
1
ID=1mA
0.5
ID=250µA
16
14
T A= 25°C
12
10
8
6
4
2
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMC2038LVT
Document number: DS35417 Rev. 4 - 2
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0
0.2
0.4
0.6
0.8
1
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.4
September 2012
© Diodes Incorporated
DMC2038LVT
1000
10
VGS, GATE-SOURCE VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
CISS
100
C OSS
CRSS
10
8
VDS=15V
6
4
2
0
0
5
10
15
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
0
2
4
6
8
10
12
Qg , TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
14
100
ID, DRAIN CURRENT (A)
RDS(on)
Limited
10
DC
1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
0.1 T
J(max) = 150°C
TA = 25°C
VGS = 10V
Single Pulse
0.01 DUT on 1 * MRP Board
0.1
PW = 100µs
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
100
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
f = 1MHz
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
RθJA(t) = r(t) * RθJA
RθJA = 164°C/W
Duty Cycle, D = t1/ t2
D = 0.005
Single Pulse
0.001
0.00001
0.0001
DMC2038LVT
Document number: DS35417 Rev. 4 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 12 Transient Thermal Resistance
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DMC2038LVT
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @Tc = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
-
-
-1.0
±100
V
μA
nA
VGS = 0V, ID = -250μA
VDS = -16V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
57
76
102
10
-0.8
-1.0
74
110
168
-1.0
V
Static Drain-Source On-Resistance
-0.4
-
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -3.0A
VGS = -2.5V, ID = -1.5A
VGS = -1.8V, ID = -1.0A
VDS = -5V, ID = -3.0A
VGS = 0V, IS = -0.6A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
530
70
60
72
7
14
0.95
1.2
11
12
21
13
705
95
90
10
20
22
34
23
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
nS
nS
nS
nS
Test Condition
VDS = -10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -15V,ID = -6A
VDS = -10V, VGS = -4.5V,
RG = 6Ω, IS = -1A,
7. Short duration pulse test used to minimize self-heating effec
8. Guaranteed by design. Not subject to product testing.
20
20
-VGS=10V
15
-VGS=4.0V
I-D, DRAIN CURRENT (A)
-VGS=4.5V
-ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
-VGS=3.0V
-VGS=2.5V
-VGS=3.5V
10
-VGS=2.0V
5
15
10
5
-VGS=1.5V
0
0
0
0.5
1
1.5
2
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 13 Typical Output Characteristics
DMC2038LVT
Document number: DS35417 Rev. 4 - 2
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0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
-VGS, GATE SOURCE VOLTAGE(V)
Fig. 14 Typical Transfer Characteristics
5
September 2012
© Diodes Incorporated
DMC2038LVT
RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω)
0.16
0.12
VGS = -1.8V
NEW PRODUCT
VGS = -2.5V
0.08
VGS = -4.5V
0.04
0.20
0.16
0.14
0.08
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Normalized)
1.5
1.3
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 17 On-Resistance Variation with Temperature
TA = 25° C
0.04
T A = -55°C
0.02
0
4
8
12
16
-ID, DRAIN SOURCE CURRENT (A)
Fig. 16 Typical On-Resistance vs.
Drain Current and Temperature
20
0.14
0.12
-VGS=5V
-ID=5A
0.1
0.08
0.06
-VGS=10V
-ID=10A
0.04
0.02
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 18 On-Resistance Variation with Temperature
20
1.5
18
-IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE(V)
TA = 85° C
0.06
20
1.7
TA = 125°C
0.1
0
5
10
15
-ID, DRAIN SOURCE CURRENT
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
TA = 150°C
0.12
0
0
VGS = 4.5V
0.18
1
0.5
16
14
12
10
8
6
4
2
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
DMC2038LVT
Document number: DS35417 Rev. 4 - 2
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0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 20 Diode Forward Voltage vs. Current
1.6
September 2012
© Diodes Incorporated
DMC2038LVT
1000
10
f = 1MHz
-VGS, GATE-SOURCE VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
100
COSS
CRSS
0
5
10
15
8
6
Qg vs. VGS
4
2
0
0
10
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 21 Typical Junction Capacitance
2
4
6
8
10
12
14
Qg, TOTAL GATE CHARGE (nC)
Fig. 22 Gate-Charge Characteristics
16
100
-ID, DRAIN CURRENT (A)
RDS(on)
Limited
10
1
DC
PW = 10s
PW = 1s
0.1
PW = 100ms
PW = 10ms
TJ(max) = 150°C
PW = 1ms
PW = 100µs
TA = 25°C
VGS = -10V
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 23 SOA, Safe Operation Area
100
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
CISS
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
RθJA(t) = r(t) * RθJA
RθJA = 164°C/W
Duty Cycle, D = t1/ t2
D = 0.005
Single Pulse
0.001
0.00001
0.0001
DMC2038LVT
Document number: DS35417 Rev. 4 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 24 Transient Thermal Resistance
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100
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September 2012
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DMC2038LVT
Package Outline Dimensions
NEW PRODUCT
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
e1
E
E1
L2
c
4x θ1
e
L
θ
6x b
A
A2
A1
TSOT26
Dim Min Max Typ
A
1.00
−
−
A1 0.01 0.10
−
A2 0.84 0.90
−
D
2.90
−
−
E
2.80
−
−
E1
1.60
−
−
b
0.30 0.45
−
c
0.12 0.20
−
e
0.95
−
−
e1
1.90
−
−
L
0.30 0.50
L2
0.25
−
−
θ
0°
8°
4°
θ1
4°
12°
−
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
C
Dimensions Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
Y1
Y (6x)
X (6x)
DMC2038LVT
Document number: DS35417 Rev. 4 - 2
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DMC2038LVT
NEW PRODUCT
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DMC2038LVT
Document number: DS35417 Rev. 4 - 2
10 of 10
www.diodes.com
September 2012
© Diodes Incorporated